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Author: Sturm, J.C.

Results

Extremely Sharp Phosphorus Turn-Off Slope and Effect of Hydrogen on Phosphorus Surface Segregation in Epitaxially-Grown Relaxed Si0.7Ge0.3 by RTCVD

2012 / IEEE / 978-1-4577-1865-6
By: Chiao-Ti Huang; Jiun-Yun Li; Sturm, J.C.;

High Breakdown Voltage Schottky Gating of Doped Si/SiGe 2DEG Systems Enabled by Suppression of Phosphorus Surface Segregation

2012 / IEEE / 978-1-4577-1865-6
By: Sturm, J.C.; Jiun-Yun Li; Chiao-Ti Huang;

A figure of merit for oscillator-based thin-film circuits on plastic for high-performance signaling, energy harvesting and driving of actuation circuits

2012 / IEEE / 978-1-4673-1164-9
By: Verma, N.; Sturm, J.C.; Wagner, S.; Sanz-Robinson, J.; Hu, Y.; Huang, L.; Rieutort-Louis, W.;

High-resolution sensing sheet for structural-health monitoring via scalable interfacing of flexible electronics with high-performance ICs

2012 / IEEE / 978-1-4673-0849-6
By: Sturm, J.C.; Song, K.; Sanz-Robinson, J.; Rieutort-Louis, W.; Yingzhe Hu; Verma, N.; Wagner, S.;

Frequency dependence of amorphous silicon Schottky diodes for Large-Area rectification applications

2012 / IEEE / 978-1-4673-1164-9
By: Wagner, S.; Verma, N.; Rieutort-Louis, W.; Sanz-Robinson, J.; Sturm, J.C.;

Increased drain saturation current in ultra-thin silicon-on-insulator (SOI) MOS transistors

1988 / IEEE
By: Colinge, J.-P.; Tokunaga, K.; Sturm, J.C.;

Transconductance enhancement mechanisms in ultra-thin (

1988 / IEEE
By: Tokunaga, K.; Sturm, J.C.; Colinge, J.-P.;

Substrate bias and temperature dependence of anomalous subthreshold slopes in fully-depleted submicron SOI MOSFETs

1989 / IEEE
By: Sturm, J.C.; Tokunaga, K.; Colinge, J.-P.;

6.2 GHz digital CMOS circuits in thin SIMOX films

1989 / IEEE
By: Trimble, L.E.; Lindenberger, W.S.; Hillenius, S.J.; Field, R.L.; Sturm, J.C.; Kamgar, A.; Celler, G.K.; Cong, H.-I.;

Ultra-high speed CMOS circuits in thin SIMOX films

1989 / IEEE / 0-7803-0817-4
By: Lindenberger, W.S.; Field, R.L.; Trimble, L.E.; Sturm, J.C.; Celler, G.K.; Cong, H.-I.; Hillenius, S.J.; Kamgar, A.;

The effect of base-emitter spacers and strain dependent densities of states in Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors

1989 / IEEE / 0-7803-0817-4
By: Schwartz, P.V.; Garone, P.M.; Prinz, E.J.; Sturm, J.C.; Xiao, X.;

The effects of base dopant outdiffusion and undoped Si/sub 1-x/Ge/sub x/ junction spacer layers in Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors

1991 / IEEE
By: Schwartz, P.V.; Garone, P.M.; Prinz, E.J.; Sturm, J.C.; Xiao, X.;

Reduction of p/sup +/-n/sup +/ junction tunneling current for base current improvement in Si/SiGe/Si heterojunction bipolar transistors

1991 / IEEE
By: Schwartz, P.V.; Prinz, E.J.; Matutinovic-Krstelj, Z.; Sturm, J.C.;

Fabry-Perot optical intensity modulator at 1.3 mu m in silicon

1991 / IEEE
By: Xiao, X.; Schwartz, P.V.; Goel, K.K.; Sturm, J.C.;

Graded-base Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition with near-ideal electrical characteristics

1991 / IEEE
By: Magee, C.W.; Prinz, E.J.; Sturm, J.C.;

Silicon temperature measurement by infrared absorption. Fundamental processes and doping effects

1992 / IEEE
By: Sturm, J.C.; Reaves, C.M.;

Current gain-Early voltage products in heterojunction bipolar transistors with nonuniform base bandgaps

1991 / IEEE
By: Prinz, E.J.; Sturm, J.C.;

Substrate bias dependence of subthreshold slopes in fully depleted silicon-on-insulator MOSFET's

1991 / IEEE
By: Sturm, J.C.; Tokunaga, K.;

Hole mobility enhancement in MOS-gated Ge/sub x/Si/sub 1-x//Si heterostructure inversion layers

1992 / IEEE
By: Garone, P.M.; Sturm, J.C.; Venkataraman, V.;

Vertical 1.3 mu m optical modulator in silicon-on-insulator

1990 / IEEE / 0-87942-573-3
By: Schwartz, P.V.; Sturm, J.C.; Xiao, X.; Goel, K.K.;

Current gain-Early voltage products in graded-base Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors

1991 / IEEE
By: Sturm, J.C.; Prinz, E.J.;

Anomalous subthreshold slopes in thin-film accumulation-mode SOI p-channel MOSFET's

1992 / IEEE
By: Sturm, J.C.; Tokunaga, K.;

A novel double-base heterojunction bipolar transistor for low-temperature bipolar logic

1992 / IEEE
By: Xiao, X.; Prinz, E.J.; Sturm, J.C.; Schwartz, P.V.;

Room-temperature 1.3- and 1.5- mu m electroluminescence from Si/Si/sub 1-x/Ge/sub x/ quantum wells

1992 / IEEE
By: Thewalt, M.L.W.; Lenchyshyn, L.C.; Sturm, J.C.; Xiao, X.; Mi, Q.;

Silicide/strained Si/sub 1-x/Ge/sub x/ Schottky-barrier infrared detectors

1993 / IEEE
By: Sturm, J.C.; Xiao, X.; Shallcross, F.V.; Palfrey, S.; Meyerhofer, D.; Lyon, S.A.; Parihar, S.R.;

Physical modelling of non-invasive silicon temperature measurement by infrared absorption

1991 / IEEE / 0-7803-0243-5
By: Sturm, J.C.; Reaves, C.M.;

Analytical modeling of current gain-Earth voltage products in Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors

1991 / IEEE / 0-7803-0243-5
By: Sturm, J.C.; Prinz, E.J.;

Base transport in near-ideal graded-base Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors from 150 K to 370 K

1990 / IEEE
By: Sturm, J.C.; Prinz, E.J.;

Carrier confinement in MOS-gated Ge/sub x/Si/sub 1-x//Si heterostructures

1990 / IEEE
By: Venkataraman, V.; Garone, P.M.; Sturm, J.C.;

Silicide/Si/sub 1-x/Ge/sub x/ Schottky-barrier long-wavelength infrared detectors

1992 / IEEE / 0-7803-0817-4
By: Meyerhofer, D.; Lyon, S.A.; Parihar, S.R.; Sturm, J.C.; Xiao, X.; Palfrey, S.;

A comprehensive study of lateral and vertical current transport in Si/Si/sub 1-x/Ge/sub xSi HBT's

1993 / IEEE / 0-7803-1450-6
By: Sturm, J.C.; Prinz, E.J.; Venkataraman, V.; Matutinovic-Krstelj, Z.; Magee, C.W.;

Si/Si/sub 1-x-y/Ge/sub x/C/sub y/Si heterojunction bipolar transistors

1994 / IEEE / 0-7803-2111-1
By: Sturm, J.C.; Liu, C.W.; St. Amour, A.; Lanzerotti, L.D.;

Leakage current modeling of series-connected thin film transistors

1995 / IEEE
By: Sturm, J.C.; Hack, M.; Wu, J.W.;

Temperature measurement of metal-coated silicon wafers by double-pass infrared transmission

1995 / IEEE
By: Cullen, C.W.; Sturm, J.C.;

Base resistance and effective bandgap reduction in n-p-n Si/Si/sub 1-x/Ge/sub x//Si HBTs with heavy base doping

1996 / IEEE
By: Matutinovic-Krstelj, Z.; Magee, C.W.; Sturm, J.C.; Prinz, E.J.; Venkataraman, V.;

Numerical simulation of the temperature dependence of band-edge photoluminescence and electroluminescence in strained-Si/sub 1-x/Ge/sub x//Si heterostructures

1995 / IEEE / 0-7803-2700-4
By: St. Amour, A.; Sturm, J.C.;

Electroluminescent devices using polymer blend thin films

1995 / IEEE / 0-7803-2700-4
By: Register, R.A.; Thompson, M.E.; Tian, J.; Sturm, J.C.; Wu, C.C.;

Si/Si/sub 1-x-y/Ge_xC_y/Si heterojunction bipolar transistors

1996 / IEEE
By: Watanabe, J.K.; Sturm, J.C.; Liu, C.W.; St. Amour, A.; Lanzerotti, L.D.; Theodore, D.;

Modeling of leakage current distributions in series connected polysilicon thin film transistors

1995 / IEEE / 0-7803-3056-0
By: Wu, I.W.; Sturm, J.C.; Cheng, E.; King, T.J.;

High field drift velocity of 2DEG in Si/SiGe heterostructures as determined by magnetoresistance techniques

1996 / IEEE / 0-7803-3358-6
By: Madhavi, S.; Sturm, J.C.; Liu, C.W.; Venkataraman, V.;

Micro-electro-mechanical charge sensing devices

1996 / IEEE / 0-7803-3358-6
By: Sturm, J.C.; Firebaugh, S.L.; Pangal, K.;

Suppression of boron outdiffusion in SiGe HBTs by carbon incorporation

1996 / IEEE / 0-7803-3393-4
By: Stach, E.; Sturm, J.C.; Lanzerotti, L.D.; Magee, C.; Buyuklimanli, T.; Hull, R.;

Effect of carbon on the valence band offset of Si/sub 1-x-y/Ge/sub x/C/sub y//Si heterojunctions

1996 / IEEE / 0-7803-3393-4
By: Sturm, J.C.; St. Amour, A.; Chang, C.L.;

Integration of organic LEDs and amorphous Si TFTs onto unbreakable metal foil substrates

1996 / IEEE / 0-7803-3393-4
By: Sturm, J.C.; Lu, M.H.; Theiss, S.; Wu, C.C.; Wagner, S.;

Correlation Of Plasma-induced Charging Voltage Measured In-situ By Microelectromechanical Sensors With Device Degradation

1997 / IEEE / 0-9651-5771-7
By: Sturm, J.C.; Pangal, K.;

Efficient organic electroluminescent devices using single-layer doped polymer thin films with bipolar carrier transport abilities

1997 / IEEE
By: Tnompson, M.E.; Dana, E.P.; Jing Tian; Register, R.A.; Sturm, J.C.; Chung-Chih Wu;

Integration of organic LEDs and amorphous Si TFTs onto flexible and lightweight metal foil substrates

1997 / IEEE
By: Theiuss, S.D.; Wu, C.C.; Forrest, S.R.; Wagner, S.; Sturm, J.C.; Lu, M.H.; Gu, G.;

Thermal effects and scaling in organic light-emitting flat-panel displays

1998 / IEEE
By: Iodice, H.; Wilson, W.; Sturm, J.C.;

Active matrix organic light emitting diode pixel design using polysilicon thin film transistors

1998 / IEEE / 0-7803-4947-4
By: Stewart, R.G.; Ipri, A.; Connor, S.; Hsu, J.; Furst, D.A.; Shen, Z.; Kane, M.G.; Dawson, R.M.A.; Lu, M.H.; Sturm, J.C.; Shi, J.; Chen, F.; Van Slyke, S.; Tang, C.W.; Robinson, S.; Ping, K.; Dickey, E.; Barrow, W.A.; Pearson, S.; Flegal, R.T.; Green, P.J.; King, C.N.;

Amorphous silicon TFT active-matrix OLED pixel

1998 / IEEE / 0-7803-4947-4
By: Wagner, S.; Sturm, J.C.; Ma, E.; Lu, M.H.;

Hydrogen plasma-enhanced crystallization of amorphous silicon for low-temperature polycrystalline silicon TFT's

1998 / IEEE / 0-7803-4774-9
By: Sturm, J.C.; Pangal, K.; Wagner, S.;

The impact of the transient response of organic light emitting diodes on the design of active matrix OLED displays

1998 / IEEE / 0-7803-4774-9
By: Stewart, R.G.; Ipri, A.; Hsu, J.; Kane, M.G.; Connor, S.; Furst, D.A.; Shen, Z.; Dawson, R.M.A.; Sturm, J.C.; Lu, M.H.; Shi, J.; Chen, F.; Van Slyke, S.; Tang, C.W.; Robinson, S.; Ping, K.; Dickey, E.; Barrow, W.A.; Pearson, S.; Flegal, R.T.; Green, P.J.; King, C.N.;

Si/sub 1-x-y/Ge/sub x/C/sub y/ alloys: an enabling technology for scaled high performance silicon-based heterojunction devices

1998 / IEEE / 0-7803-5288-2
By: Sturm, J.C.; Chang, C.L.; Carroll, M.S.; Yang, M.;

25-nm p-channel vertical MOSFETs with SiGeC source-drains

1999 / IEEE
By: Min Yang; Sturm, J.C.; Carroll, M.; Chia-Lin Chang;

P-channel thin film transistor of microcrystalline silicon directly deposited at 320/spl deg/C

1999 / IEEE / 0-7803-5170-3
By: Sturm, J.C.; Pangal, K.; Chen, Y.; Wagner, S.;

High temperature polycrystalline silicon thin film transistor on steel substrates

1999 / IEEE / 0-7803-5410-9
By: Pangal, K.; Ming Wu; Wagner, S.; Sturm, J.C.;

Thin-film transistors in polycrystalline silicon by blanket and local source/drain hydrogen plasma-seeded crystallization

2000 / IEEE
By: Wagner, S.; Sturm, J.C.; Pangal, K.; Yao, N.;

Improved external coupling efficiency in organic light-emitting devices on high-index substrates

2000 / IEEE / 0-7803-6438-4
By: Lu, M.-H.; Sturm, J.C.; Madigan, C.F.;

Integrated amorphous and polycrystalline silicon thin-film transistors in a single silicon layer

2001 / IEEE
By: Pangal, K.; Wagner, S.; Sturm, J.C.;

Novel three-color polymer light-emitting devices for passive-matrix flat panel displays

2001 / IEEE / 0-7803-7014-7
By: Pschenitzka, F.; Min-Hao Lu; Ke Long; Sturm, J.C.;

Amorphous Si TFTs on plastically-deformed substrates with 3-D shapes

2001 / IEEE / 0-7803-7014-7
By: Sturm, J.C.; Wagner, S.; Suo, Z.; Gleskova, H.; Hsu, P.I.;

Suppression of boron penetration in p-channel MOSFETs using polycrystalline Si/sub 1-x-y/Ge_xC_y gate layers

2001 / IEEE
By: Carroll, M.S.; Stewart, E.J.; Sturm, J.C.;

On-chip assembly of silicon photonic band gap crystals

2002 / IEEE / 1-55752-708-3
By: Norris, D.J.; Vlasov, Yu.A.; Sturm, J.C.; Bo, X.Z.;

On-chip assembly of silicon photonic band gap crystals

2002 / IEEE / 1-55752-706-7
By: Sturm, J.C.; Bo, X.Z.; Norris, D.J.; Vlasov, Yu.A.;

Complementary metal-oxide-semiconductor thin-film transistor circuits from a high-temperature polycrystalline silicon process on steel foil substrates

2002 / IEEE
By: Xiang-Zheng Bo; Ming Wu; Wagner, S.; Sturm, J.C.;

A DNA prism: physical principles for optimizing a microfabricated DNA separation device

2002 / IEEE / 0-7803-7462-2
By: Tegenfeldt, J.O.; Huang, L.R.; Cox, E.C.; Austin, R.H.; Sturm, J.C.;

SiGe single-hole transistor fabricated by AFM oxidation and epitaxial regrowth

2003 / IEEE / 0-7803-7727-3
By: Xiang-Zheng Bo; Sturm, J.C.; Tsui, D.C.; Rokhinson, L.P.;

Stretchable and deformable macroelectronics

2003 / IEEE / 0-7803-7727-3
By: Suo, Z.; Sturm, J.C.; Hsu, P.-H.I.; Lacour, S.P.; Wagner, S.;

Effects of mechanical strain on TFTs on spherical domes

2004 / IEEE
By: Wagner, S.; Suo, Z.; Xi, Z.; Gleskova, H.; Huang, M.; Hsu, P.I.; Sturm, J.C.;

Short channel amorphous-silicon TFTs on high-temperature clear plastic substrates [LED display applications]

2004 / IEEE / 0-7803-8284-6
By: Long, K.; Sturm, J.C.; Wagner, S.; Gleskova, H.;

Crystal-direction dependence of uniaxial tensile strain in ultra-thin SOI

2004 / IEEE / 0-7803-8497-0
By: Hobart, K.D.; Peterson, R.L.; Sturm, J.C.; Yin, H.;

A three-dimensional folded dynamic RAM in beam-recrystallized polysilicon

1984 / IEEE
By: Giles, M.D.; Sturm, J.C.; Gibbons, J.F.;

VB-2 a three-dimensional merged vertical bipolar-MOS device in recrystallized silicon

1985 / IEEE
By: Gibbons, J.F.; Sturm, J.C.;

Vertical bipolar transistors in laser-recrystallized polysilicon

1985 / IEEE
By: Gibbons, J.F.; Sturm, J.C.;

A seeded-channel silicon-on-insulator (SOI) MOS technology

1985 / IEEE
By: Hwa, T.L.; Gibbons, J.F.; Sturm, J.C.; Baerg, W.; Lin, H.Y.; Tzeng, J.C.; Ting, C.H.; Siu, B.B.;

IIIB-3 Limited reaction processing: In-situ epitaxial silicon thin-oxide polysilicon layers for MOS transistors

1986 / IEEE
By: Gronet, C.M.; Sturm, J.C.; Gibbons, J.F.;

Limited reaction processing: In-situ metal—oxide—semiconductor capacitors

1986 / IEEE
By: Gronet, C.M.; Sturm, J.C.; Gibbons, J.F.;

In-situ epitaxial silicon—oxide-doped polysilicon structures for MOS field-effect transistors

1986 / IEEE
By: Sturm, J.C.; Gibbons, J.F.; Wilson, S.D.; King, C.A.; Gronet, C.M.;

A lateral silicon-on-insulator bipolar transistor with a self-aligned base contact

1987 / IEEE
By: Gibbons, J.F.; McVittie, J.P.; Sturm, J.C.; Pfeiffer, L.;

Ultrathin strained-SOI by stress balance on compliant substrates and FET performance

2005 / IEEE
By: Hobart, K.D.; Haizhou Yin; Sturm, J.C.; Kub, F.J.; Peterson, R.L.;

Designing displays for flexibility and conformal shaping

2005 / IEEE / 0-7803-9217-5
By: Wagner, S.; Sturm, J.C.;

Increased reliability of a-Si TFT's deposited on clear plastic substrates at high temperatures

2005 / IEEE / 0-7803-9040-7
By: Wagner, S.; Gleskova, H.; Cheng, I.-C.; Kattamis, A.; Long, K.; Sturm, J.C.;

High mobility nanocrystalline silicon transistors on clear plastic substrates

2006 / IEEE
By: Holmes, R.J.; Kattamis, A.Z.; Wagner, S.; Forrest, S.R.; Sturm, J.C.; Long, K.; I-Chun Cheng;

Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250/spl deg/C to 280/spl deg/ C

2006 / IEEE
By: Gleskova, H.; Cheng, I.-C.; Kattamis, A.Z.; Long, K.; Sturm, J.C.; Wagner, S.;

Self-aligned amorphous-silicon TFTs on clear plastic substrates

2006 / IEEE
By: Long, K.; Kattamis, A.Z.; I-Chun Cheng; Wagner, S.; Sturm, J.C.;

Active-Matrix Amorphous-Silicon TFTs Arrays at 180$^circhboxC$on Clear Plastic and Glass Substrates for Organic Light-Emitting Displays

2006 / IEEE
By: Long, K.; O'Regan, M.; Yu, G.; Stevenson, M.; Sturm, J.C.; Wagner, S.; Gleskova, H.; Cheng, I.-C.; Kattamis, A.Z.;

Full-Color OLEDs Integrated by Dry Dye Printing

2006 / IEEE
By: Sturm, J.C.; Lu, M.-H.; Pschenitzka, F.; Long, K.;

Growth of Ultra-uniform B-doped Si/SiGe Multiple Quantum Wells by RTCVD for Mid-IR Applications

2006 / IEEE / 1-4244-0461-4
By: Denker, M.S.; Marino, J.; Buyuklimanli, T.; Gmachl, C.F.; Sturm, J.C.; Zheng, W.; Mayer, J.T.;

High Growth Rate of Epitaxial Silicon-Carbon Alloys by High-Order Silane Precursor and Chemical Vapor Deposition

2006 / IEEE / 1-4244-0461-4
By: Sanchez, E.; Sturm, J.C.; Chung, K.H.; Kuppurao, S.;

Dynamics of Uniform Si/SiGe Uniaxial Strain Generation on Compliant Insulating Substrates

2006 / IEEE / 1-4244-0461-4
By: Sturm, J.C.; Peterson, R.L.;

Effect of $\hbox{SiN}_{x}$ Gate Dielectric Deposition Power and Temperature on a-Si:H TFT Stability

2007 / IEEE
By: Hekmatshoar, B.; Cherenack, K.H.; Kattamis, A.Z.; Wagner, S.; Sturm, J.C.; Gleskova, H.; I-Chun Cheng;

Amorphous Silicon Thin-Film Transistor Backplanes Deposited at 200 $^{\circ}{\hbox{C}}$ on Clear Plastic for Lamination to Electrophoretic Displays

2007 / IEEE
By: Cheng, I.-C.; Kattamis, A.Z.; Allee, D.R.; O'Rourke, S.M.; Loy, D.E.; Venugopal, S.M.; Sturm, J.C.; Wagner, S.; Cherenack, K.H.; Hekmatshoar, B.; Ke Long;

Amorphous-Silicon Thin-Film Transistors Fabricated at 300 $^{\circ}\hbox{C}$ on a Free-Standing Foil Substrate of Clear Plastic

2007 / IEEE
By: Wagner, S.; Sturm, J.C.; Hekmatshoar, B.; Kattamis, A.Z.; Cherenack, K.H.;

Novel Amorphous-Si AMOLED Pixels with OLED-independent Turn-on Voltage and Driving Current

2007 / IEEE / 978-1-4244-1101-6
By: Kattamis, A.Z.; Hekmatshoar, B.; Sturm, J.C.; Wagner, S.; Cherenack, K.;

Analytical Model of Apparent Threshold Voltage Lowering Induced by Contact Resistance in Amorphous Silicon Thin Film Transistors

2007 / IEEE / 978-1-4244-1101-6
By: Wagner, S.; Ke Long; Hekmatshoar, B.; Sturm, J.C.;

Reliability of Active-Matrix Organic Light-Emitting-Diode Arrays With Amorphous Silicon Thin-Film Transistor Backplanes on Clear Plastic

2008 / IEEE
By: Ke Long; Hekmatshoar, B.; Cherenack, K.H.; Kattamis, A.Z.; Jian-Zhang Chen; Hack, M.; Rajan, K.; Sturm, J.C.; Wagner, S.;

Top-Gate Amorphous Silicon TFT With Self-Aligned Silicide Source/Drain and High Mobility

2008 / IEEE
By: Sturm, J.C.; Wagner, S.; Hekmatshoar, B.; Yifei Huang;

Amorphous silicon thin-film transistors with DC saturation current half-life of more than 100 years

2008 / IEEE / 978-1-4244-2377-4
By: Cherenack, K.H.; Hekmatshoar, B.; Sturm, J.C.; Wagner, S.;

Electron Injection Mechanism in Top-gate Amorphous Silicon Thin-film Transistors with Self-Aligned Silicide Source and Drain

2008 / IEEE / 978-1-4244-1942-5
By: Yifei Huang; Hekmatshoar, B.; Wagner, S.; Sturm, J.C.;

AMOLED Reliability with a-Si TFT's in Normal vs. Inverted TFT/OLED Integration Scheme

2008 / IEEE / 978-1-4244-1942-5
By: Kattamis, A.; Ke Long; Cherenack, K.; Hekmatshoar, B.; Sturm, J.C.; Wagner, S.;

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