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Author: Saito, M.

Results

Noninvasive assessment of arterial stiffness by pulse wave analysis
2012 / IEEE
By: Matsukawa, M.; Saito, M.; Watanabe, Y.; Asada, T.;
A Motor Surge Voltage Suppression Method With Surge Energy Regeneration
2012 / IEEE
By: Saito, M.; Shimizu, T.; Miyazaki, T.; Nakamura, M.;
Autonomous rice field operation project in NARO
2011 / IEEE / 978-1-4244-8115-6
By: Nishiwaki, K.; Tamaki, K.; Nagasaka, Y.; Kobayashi, K.; Kikuchi, Y.; Saito, M.;
Phase separation for creating multicolor photochromic liquid
2011 / IEEE / 978-1-4244-7355-7
By: Saito, M.; Nomoto, Y.; Mochizuki, R.;
People detection and tracking from fish-eye image based on probabilistic appearance model
2011 / IEEE / 978-4-907764-39-5
By: Saito, M.; Hashimoto, M.; Kimura, G.; Kitaguchi, K.;
Numerical calculation and experimental validation of RCS analysis for radome-enclosed scatterer by using PMCHWT-formulation
2011 / IEEE / 978-1-4244-6051-9
By: Konishi, Y.; Naito, I.; Saito, M.; Inasawa, Y.;
ALMA antenna
2011 / IEEE / 978-1-4244-6051-9
By: Saito, M.;
Demonstration of Vehicle to Vehicle Communications over TV White Space
2011 / IEEE / 978-1-4244-8327-3
By: Pagadarai, S.; Si Chen; Fujii, T.; Ohta, M.; Ohtake, M.; Al Abbasi, A.; Vuyyuru, R.; Oie, Y.; Tsuru, M.; Tsukamoto, K.; Saito, M.; Ihara, Y.; Nishida, K.; Fujii, Y.; Yoshimura, C.; Oshida, T.; Nishibori, M.; Altintas, O.; Wyglinski, A.M.;
Influence of geometrical shape of return stroke channel on associated electromagnetic fields
2011 / IEEE / 978-1-4577-1466-5
By: Itamoto, N.; Ishii, M.; Saito, M.;
Frequency of upward lightning from tall structures in winter in Japan
2011 / IEEE / 978-1-4577-1466-5
By: Natsuno, D.; Matsui, M.; Fujii, F.; Saito, M.; Ishii, M.;
Application of the mean field methods to MRF optimization in computer vision
2012 / IEEE / 978-1-4673-1228-8
By: Okatani, T.; Saito, M.; Deguchi, K.;
Searching objects in large-scale indoor environments: A decision-theoretic approach
2012 / IEEE / 978-1-4673-1405-3
By: Kunze, L.; Inaba, M.; Okada, K.; Azuma, H.; Saito, M.; Beetz, M.;
Analysis of terahertz zero bias detectors by using a triple-barrier resonant tunneling diode integrated with a self-complementary bow-tie antenna
2012 / IEEE / 978-1-4673-1164-9
By: Yamashita, S.; Nakamura, M.; Suhara, M.; Okazaki, T.; Asakawa, K.; Takahagi, S.; Itagaki, Y.; Tegude, F.-J.; Prost, W.; Poloczek, A.; Keller, G.; Tchegho, A.; Saito, M.;
A 1 TB/s 1 pJ/b 6.4 ${\rm mm}^{2}/{\rm TB/s}$ QDR Inductive-Coupling Interface Between 65-nm CMOS Logic and Emulated 100-nm DRAM
2012 / IEEE
By: Miura, N.; Kuroda, T.; Saito, M.;
Ultrafine Particle Removal Using Gas Cluster Ion Beam Technology
2013 / IEEE
By: Matsuo, J.; Aoki, T.; Seki, T.; Saito, M.; Inai, K.; Dobashi, K.;
Optical and mechanical properties of infrared fibers
1988 / IEEE
By: Takizawa, M.; Saito, M.; Miyagi, M.;
An integrated AI environment for industrial expert systems
1988 / IEEE
By: Kobayashi, Y.; Bandai, Y.; Hoshino, Y.; Saito, M.; Kawakita, S.;
Infrared optical fibers with vapor-deposited cladding layer
1989 / IEEE
By: Takizawa, M.; Saito, M.; Miyagi, M.;
A new method for estimating the acoustic attenuation coefficient of tissue from reflected ultrasonic signals
1989 / IEEE
By: Dong-Lai Liu; Saito, M.;
A broadband local area network using the intelligent head-end
1988 / IEEE / 0-8186-0897-8
By: Saito, M.; Yoshida, H.; Kunii, T.L.;
An ultra high throughput ADC
1989 / IEEE
By: Saito, M.; Takahata, C.; Morita, M.;
1200 V 20 A integrated light triggered and quenched static induction thyristor (LTQ SI thyristor)
1989 / IEEE
By: Hasegawa, Y.; Saito, M.; Nishizawa, J.; Baba, A.; Katsumata, M.;
A 3.8-ns CMOS 16*16-b multiplier using complementary pass-transistor logic
1990 / IEEE
By: Nishida, T.; Yamanaka, T.; Yano, K.; Shimizu, A.; Shimohigashi, K.; Saito, M.;
On the method-independent lower bound (MILB) to the variance of attenuation estimation in random reflection
1990 / IEEE
By: Liu, D.-L.; Saito, M.; Ikeda, K.;
A new face down bonding technique using a low melting point metal
1990 / IEEE
By: Saito, M.; Mori, M.; Ohdaira, H.; Niitsuma, A.; Hongu, A.;
Investigation of Sc/sub 2/O/sub 3/ behavior in Sc/sub 2/O/sub 3/-dispersed oxide cathodes
1990 / IEEE
By: Sano, K.; Watanabe, K.; Fukuyama, K.; Suzuki, R.; Saito, M.; Nakanishi, H.;
Twin register architecture for an AI processor
1989 / IEEE / 0-8186-1984-8
By: Aikawa, T.; Okamura, M.; Matoba, T.; Takamiya, T.; Maeda, K.; Saito, M.; Minagawa, K.;
A new face down bonding technique using a low melting point metal
1989 / IEEE
By: Ohdaira, H.; Niitsuma, A.; Hongu, A.; Saito, M.; Mori, M.;
Multilevel interconnection for half-micron ULSI's
1989 / IEEE
By: Iijima, S.; Saito, M.; Nishida, T.; Yagi, K.; Sasaki, E.; Kure, T.;
The use of modified constellation graph method for computer-aided classification of congenital heart diseases
1991 / IEEE
By: Sekiya, T.; Saito, M.; Watanabe, A.;
A new method for estimating the acoustic attenuation coefficient of tissue from reflected ultrasonic signals
1988 / IEEE / 0-7803-0785-2
By: Saito, M.; Liu, D.-l.;
Parameter estimation for the ABR source derivation
1988 / IEEE / 0-7803-0785-2
By: Saito, M.; Yamazaki, K.; Yokoyama, K.; Aruga, M.; Sekiya, T.; Kahtoh, S.;
Hyperthermia by low-frequency synthesized ultrasound
1988 / IEEE / 0-7803-0785-2
By: Shiina, T.; Saito, M.;
LB films of dye-derivatives as a model system for molecular electronics
1989 / IEEE
By: Saito, K.; Kuroda, S.; Ikegami, K.; Sugi, M.; Saito, M.;
ESR and ENDOR characterization of molecular electronic materials
1989 / IEEE
By: Saito, M.; Saito, K.; Ikegami, K.; Kuroda, S.; Shirakawa, H.; Sugi, M.;
A fabrication process of thin film head for VCR
1990 / IEEE
By: Miura, M.; Saito, M.; Imai, S.; Saito, S.; Nagatomo, H.; Shibayama, Y.;
Restoring a delta -pulse train by spectral fitting
1992 / IEEE
By: Liu, D.-L.; Saito, M.;
Automated optical mass storage systems with 3-beam magneto-optical disk drives
1991 / IEEE / 0-8186-2155-9
By: Watanabe, A.; Saito, M.; Yamada, I.; Itao, K.;
Pre-decoding mechanism for superscalar architecture
1991 / IEEE / 0-87942-638-1
By: Minagawa, K.; Aikawa, T.; Saito, M.;
Collision free motion control of multiple mobile robots on path network
1991 / IEEE / 0-7803-0067-X
By: Tsumura, T.; Saito, M.;
P(VDF-TrFE) transducer with a concave annular structure for the measurement of layer thickness
1993 / IEEE
By: Koyama, K.; Tsukahara, Y.; Saito, M.;
Automated optical mass storage system with 3-beam magneto-optical disk drives
1993 / IEEE
By: Saito, M.; Yamada, I.; Itao, K.; Watabe, A.;
Parallelization of AMBER molecular dynamics program for the AP1000 highly parallel computer
1992 / IEEE / 0-8186-2775-1
By: Yao, T.; Tanaka, Y.; Sato, H.; Tsutsumi, S.; Iwama, H.; Morikami, K.; Saito, M.; Kawakika, S.;
A transcutaneous energy transmission system for an artificial organ by using a novel resonant converter
1992 / IEEE / 0-7803-0734-8
By: Nakaoka, M.; Saito, M.; Nishimura, T.H.; Inoue, T.;
Fluctuations on R-R interval time series of diabetic autonomic neuropathy
1992 / IEEE / 0-7803-0734-8
By: Nagatsuka, K.; Saito, M.; Inoue, T.; Nishimura, T.H.; Matsuo, H.; Senda, S.;
A prediction model of blood pressure using endocrine system and autonomic nervous system
1991 / IEEE / 0-87942-688-8
By: Saito, M.; Nishimura, T.H.;
P-MOSFET's with ultra-shallow solid-phase-diffused drain structure produced by diffusion from BSG gate-sidewall
1993 / IEEE
By: Akasaka, Y.; Saito, M.; Ono, M.; Hara, H.; Yoshitomi, T.; Nii, H.; Iwai, H.; Ushiku, Y.; Katsumata, Y.; Momose, H.S.; Matsuda, S.;
A fine pitch COG technique for a TFT-LCD panel using an indium alloy
1993 / IEEE
By: Mori, M.; Hongu, A.; Saito, M.; Kizaki, Y.;
A digital modulation method for terrestrial digital TV broadcasting using trellis coded OFDM and its performance
1992 / IEEE / 0-7803-0608-2
By: Moriyama, S.; Saito, M.; Yamada, O.;
Thin film magnetic head for high definition VCR
1991 / IEEE
By: Takahashi, H.; Tsuchiya, T.; Nagatomo, H.O.; Konishi, K.; Arai, N.; Saito, M.; Miura, M.;
Metallized ultra-shallow-junction device technology for sub-0.1 /spl mu/m gate MOSFET's
1994 / IEEE
By: Takeda, E.; Nishida, T.; Nagai, R.; Kimura, S.; Hisamoto, D.; Saito, M.; Nakamura, K.; Kobayashi, N.;
Scaling the MOS transistor below 0.1 /spl mu/m: methodology, device structures, and technology requirements
1994 / IEEE
By: Saito, M.; Wada, T.; Iwai, H.; Fiegna, C.; Ricco, B.; Sangiorgi, E.;
Production of O/W type uniformly sized droplets using a convergent AC electric field
1993 / IEEE / 0-7803-1462-X
By: Kato, S.; Sato, M.; Saito, M.;
New algorithm simulation for mesoscopic electron wave devices employing high mobility 2D electron gas
1992 / IEEE / 0-7803-0817-4
By: Saito, M.; Takatsu, M.; Usuki, T.; Yokoyama, N.; Okada, M.;
Ultra-thin SOI CMOS with selective CVD tungsten for low-resistance source and drain
1992 / IEEE / 0-7803-0817-4
By: Hisamoto, D.; Takeda, E.; Nishida, T.; Nagai, R.; Nakamura, K.; Kimura, S.; Kobayashi, N.; Saito, M.;
An SPDD p-MOSFET structure suitable for 0.1 and sub 0.1 micron channel length and its electrical characteristics
1992 / IEEE / 0-7803-0817-4
By: Iwai, H.; Ushiku, Y.; Katsumata, Y.; Momose, H.S.; Matsuda, S.; Saito, M.; Nii, H.; Akasaka, Y.; Ono, M.; Yoshitomi, T.;
Multi-agent CAMAC crate controller with Trident 32-bit transputers
1994 / IEEE
By: Ogawa, S.; Saito, M.; Anraku, K.; Ueda, I.; Saeki, T.; Inaba, S.; Imori, M.;
Influence of high substrate doping concentration on the hot-carrier and other characteristics of small-geometry CMOS transistors down to the 0.1 /spl mu/m generation
1994 / IEEE / 0-7803-1921-4
By: Momose, H.S.; Ohguro, T.; Fiegna, C.; Yoshitomi, T.; Saito, M.; Ono, M.; Iwai, H.;
Analysis of resistance behavior in Ti- and Ni-salicided polysilicon films
1994 / IEEE
By: Morimoto, T.; Iwai, H.; Koike, M.; Nakamura, S.; Ohguro, T.; Nishiyama, A.; Saito, M.; Ono, M.; Yoshitomi, T.; Ushiku, Y.;
Characteristics of a novel energy transmission for a rechargeable cardiac pacemaker by using a resonant DC-DC converter
1993 / IEEE / 0-7803-0891-3
By: Saito, M.; Kuwana, K.; Maejima, Y.; Hirachi, K.; Nishimura, T.H.;
A fine pitch COG technique for a TFT-LCD panel using an indium alloy
1993 / IEEE / 0-7803-0794-1
By: Kizaki, Y.; Mori, M.; Hongu, A.; Saito, M.;
Tenth micron p-MOSFET's with ultra-thin epitaxial channel layer grown by ultra-high-vacuum CVD
1993 / IEEE / 0-7803-1450-6
By: Ono, M.; Fiegna, C.; Yoshitomi, T.; Akasaka, Y.; Usuda, K.; Saito, M.; Yamada, K.; Ohguro, T.; Sugiyama, N.; Iwai, H.;
Sub-50 nm gate length n-MOSFETs with 10 nm phosphorus source and drain junctions
1993 / IEEE / 0-7803-1450-6
By: Iwai, H.; Ohguro, T.; Fiegna, C.; Yoshitomi, T.; Saito, M.; Ono, M.;
A large air gap flat transformer for a transcutaneous energy transmission system
1994 / IEEE / 0-7803-1859-5
By: Kuwana, K.; Maejima, Y.; Hirachi, K.; Eguchi, T.; Nishimura, T.H.; Saito, M.;
High power and high speed DC solid-state relay: 1500 V-20 A class Photo Power Module
1994 / IEEE / 0-7803-1993-1
By: Saito, M.; Sunayama, T.; Matumoto, T.; Katumata, M.; Endo, S.; Baba, A.; Yabe, H.;
Tunneling gate oxide approach to ultra-high current drive in small geometry MOSFETs
1994 / IEEE / 0-7803-2111-1
By: Momose, H.S.; Iwai, H.; Saito, M.; Nakamura, S.; Ohguro, T.; Yoshitomi, T.; Ono, M.;
Application of semiclassical device simulation to trade-off studies for sub-0.1 /spl mu/m MOSFETs
1994 / IEEE / 0-7803-2111-1
By: Saito, M.; Iwai, H.; Fiegna, C.; Sangiorgi, E.;
A study on hot carrier effects on N-MOSFETs under high substrate impurity concentration
1995 / IEEE
By: Yoshitomi, T.; Saito, M.; Ono, M.; Iwai, H.; Momose, H.S.; Ohguro, T.; Fiegna, C.;
A 40 nm gate length n-MOSFET
1995 / IEEE
By: Iwai, H.; Ohguro, T.; Fiegna, C.; Yoshitomi, T.; Saito, M.; Ono, M.;
Production of oil/water type uniformly sized droplets using a convergent AC electric field
1996 / IEEE
By: Saito, M.; Kato, S.; Sato, M.;
Development of torsional-vibration systems used for high frequency ultrasonic plastic welding
1995 / IEEE / 0-7803-2940-6
By: Saito, M.; Adachi, K.; Mori, S.; Ikeya, M.;
Nitrogen-doped nickel monosilicide technique for deep submicron CMOS salicide
1995 / IEEE / 0-7803-2700-4
By: Saito, M.; Yoshitomi, T.; Morifuji, E.; Ono, M.; Momose, H.S.; Nakamura, S.; Ohguro, T.; Iwai, H.;
An object-based distributed computing environment based on a reflective architecture
1995 / IEEE / 0-8186-7025-8
By: Murata, S.; Shimada, M.; Saito, M.; Yokoyama, T.;
1.5 nm direct-tunneling gate oxide Si MOSFET's
1996 / IEEE
By: Sasaki, H.; Iwai, H.; Saito, M.; Nakamura, S.; Ohguro, T.; Yoshitomi, T.; Ono, M.;
Technique for controlling effective Vth in multi-Gbit DRAM sense amplifier
1996 / IEEE / 0-7803-3339-X
By: Tamura, H.; Kawashima, S.; Gotoh, K.; Ogawa, J.; Saito, M.;
A 0.9 V sense-amplifier driver for high-speed Gb-scale DRAMs
1996 / IEEE / 0-7803-3339-X
By: Ogawa, J.; Gotoh, K.; Taguchi, M.; Tamura, H.; Saito, M.;
High performance 0.15 /spl mu/m single gate Co salicide CMOS
1996 / IEEE / 0-7803-3342-X
By: Yoshitomi, T.; Iwai, H.; Momose, H.S.; Morifuji, E.; Ono, M.; Saito, M.; Ohguro, T.;
0.2 /spl mu/m analog CMOS with very low noise figure at 2 GHz operation
1996 / IEEE / 0-7803-3342-X
By: Morifuji, E.; Ohgaro, T.; Iwai, H.; Ito, N.; Momose, H.S.; Yoshitomi, T.; Ono, M.; Saito, M.;
A high frequency 0.35 /spl mu/m gate length power silicon NMOSFET operating with breakdown voltage of 13 V
1995 / IEEE / 0-7803-2618-0
By: Ohguro, T.; Iwai, H.; Momose, H.S.; Ono, M.; Yoshitomi, T.; Kakumoto, M.; Endo, K.; Saito, M.;
MCM-D/L using copper/photosensitive-BCB multilayer for upper microwave band systems
1996 / IEEE / 0-7803-3286-5
By: Hanawa, T.; Iseki, Y.; Shizuki, Y.; Higuchi, K.; Takagi, E.; Miyagi, T.; Konno, M.; Yoshihara, K.; Saito, M.;
Lazy fault tolerance-a method for dependable distributed systems
1994 / IEEE / 0-8186-7083-5
By: Saito, M.; Shimada, M.; Yokoyama, T.;
Silicided silicon-sidewall source and drain (S/sup 4/D) structure for high-performance 75-nm gate length pMOSFETs
1995 / IEEE / 0-7803-2602-4
By: Saito, M.; Yoshitomi, T.; Iwai, H.; Momose, H.S.; Ono, M.; Ohguro, T.;
The influence of oxygen at epitaxial Si/Si substrate interface for 0.1 /spl mu/m epitaxial Si channel N-MOSFETs grown by UHV-CVD
1995 / IEEE / 0-7803-2602-4
By: Momose, H.S.; Sugiyama, N.; Ohguro, T.; Iwai, H.; Imai, K.; Ono, M.; Yoshitomi, T.; Saito, M.; Usuda, K.;
Pressure-controlled two-step TEOS-O/sub 3/ CVD eliminating the base material effect
1995 / IEEE / 0-7803-2602-4
By: Kudoh, Y.; Saito, M.; Homma, Y.;
Advantage of small geometry silicon MOSFETs for high-frequency analog applications under low power supply voltage of 0.5 V
1995 / IEEE / 0-7803-2602-4
By: Ito, N.; Tanimoto, H.; Takahashi, C.; Fujimoto, R.; Ono, M.; Ohguro, T.; Iwai, H.; Saito, M.; Momose, H.S.; Yoshitomi, T.;
Evaluation and control method of organic contamination on wafer surfaces
1995 / IEEE / 0-7803-2928-7
By: Saito, M.;
Gettering layer formation in low-dose SIMOX wafers
1995 / IEEE / 0-7803-2547-8
By: Nakashima, S.; Imai, M.; Saito, M.; Jablonski, J.;
SSM-MP: more scalability in shared-memory multi-processor
1995 / IEEE / 0-8186-7165-3
By: Sakai, H.; Tanaka, K.; Ohmizo, T.; Wakamori, O.; Hayashi, H.; Saito, M.; Nozuwe, H.; Mogi, H.; Shung Ho Shing; Iwasa, S.;
Experimental investigation of droplet formation mechanisms by electrostatic dispersion in a liquid-liquid system
1995 / IEEE / 0-7803-3008-0
By: Hatori, T.; Sato, M.; Saito, M.;
Small sized synthesizer module for 1.9 GHz digital mobile communication
1995 / IEEE / 0-7803-3622-4
By: Yoshida, H.; Tabahashi, C.; Iseki, Y.; Shizuki, Y.; Kunio Yo; Saito, M.; Mori, M.;
Development of Au-Al solid phase diffusion flip chip bonding
1995 / IEEE / 0-7803-3622-4
By: Kizaki, Y.; Saito, M.; Mori, M.;
Evaluation of barrier metals of solder bumps for flip-chip interconnection
1995 / IEEE / 0-7803-3622-4
By: Yamada, H.; Tateyama, K.; Honma, S.; Saito, M.;
A fine pitch and high aspect ratio bump fabrication process for flip-chip interconnection
1995 / IEEE / 0-7803-3622-4
By: Yamada, H.; Saito, M.;
An improvement of a transcutaneous-energy transformer for a noninvasive rechargeable cardiac pacemaker battery
1996 / IEEE / 0-7803-3500-7
By: Saito, M.; Maejima, Y.; Hirachi, K.; Inoue, T.; Eguchi, T.; Nishimura, T.H.;
Effect of oxidizing ambient on the generation of microdefects in low-dose SIMOX wafers
1996 / IEEE / 0-7803-3315-2
By: Katayama, T.; Miyamura, Y.; Saito, M.; Jablonski, J.; Nakashima, S.;
Effect on high-temperature oxidation on the buried oxide integrity in low-dose SIMOX wafers
1996 / IEEE / 0-7803-3315-2
By: Miyamura, Y.; Jablonski, J.; Saito, M.; Katayama, T.;
High efficiency 2 GHz power Si-MOSFET design under low supply voltage down to 1 V
1996 / IEEE / 0-7803-3393-4
By: Saito, M.; Ohguro, T.; Iwai, H.; Katsumata, Y.; Momose, H.S.; Morimoto, T.; Yoshitomi, T.; Matsuzaki, K.; Murakami, K.; Morifuji, E.;
Surface tension reduction of liquid by applied electric field using vibrating jet method
1996 / IEEE / 0-7803-3544-9
By: Sato, M.; Saito, M.; Kudo, N.;
Throughput improvement of CDMA slotted ALOHA system by modified channel load sensing protocol
1996 / IEEE / 0-7803-3692-5
By: Yamazato, T.; Sato, T.; Okada, H.; Saito, M.; Ogawa, A.; Katasyama, M.;
An advanced transcutaneous energy transformer for a rechargeable cardiac pacemaker battery by using a resonant DC to DC converter
1996 / IEEE / 0-7803-2775-6
By: Nishimura, T.H.; Maejima, Y.; Saito, M.; Hirachi, K.; Eguchi, T.;

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