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Author: Rommel, S.L.

Results

Mapping Defect Density in MBE Grown In0.53 Ga0.47 As Epitaxial Layers on Si Substrate Using Esaki Diode Valley Characteristics
2014 / IEEE
By: Thomas, P.; Majumdar, K.; Kirsch, P.D.; Hobbs, C.; Rommel, S.L.; Droopad, R.; Loh, W.; Filmer, M.; Romanczyk, B.; Pawlik, D.; Matthews, K.; Hung, P.; Gaur, A.;
Low resistance ohmic contacts to p-Ge/sub 1-x/Cx on Si
1997 / IEEE
By: Xiaoping Shao; Unruh, K.M.; Kolodzey, J.; Berger, P.R.; Orner, B.A.; Rommel, S.L.;
A p-Ge/sub 1-x/C/sub x//n-Si heterojunction diode grown by molecular beam epitaxy
1997 / IEEE
By: Kolodzey, J.; Orner, B.A.; Rommel, S.L.; Xiaoping Shao; Berger, P.R.;
Si-based interband tunneling devices for high-speed logic and low power memory applications
1998 / IEEE / 0-7803-4774-9
By: Thompson, P.E.; Dillon, T.E.; Lake, R.; Berger, P.R.; Hobart, K.D.; Rommel, S.L.; Simons, D.S.; Seabaugh, A.C.;
Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities
1999 / IEEE
By: Lake, R.; Hobart, K.D.; Thompson, P.E.; Berger, P.R.; Dillon, T.E.; Rommel, S.L.; Seabaugh, A.C.;
Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing
2000 / IEEE
By: Berger, P.R.; Adam, T.N.; Rommel, S.L.; Troeger, R.T.; Guedj, C.; Lake, R.; Dashiell, M.W.; Seabaugh, A.C.; Kolodzey, J.;
Development of /spl delta/B/i-Si//spl delta/Sb and /spl delta/B/i-Si//spl delta/Sb/i-Si//spl delta/B resonant interband tunnel diodes for integrated circuit applications
2000 / IEEE / 0-7803-6472-4
By: Rommel, S.L.; Niu Jin; Dillon, T.E.; Di Giacomo, S.J.; Banyai, J.; Cord, B.M.; Lake, R.; Hancock, D.J.; Kirpalani, N.; Emanuele, V.; Berger, P.R.; Thompson, P.E.; Hobart, K.D.; D'Imperio, C.;
Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions
2003 / IEEE
By: Rice, A.T.; Berger, P.R.; Niu Jin; Sung-Yong Chung; Simons, D.S.; Chi, P.H.; Kurinec, S.K.; Hirschman, K.D.; Rommel, S.L.; Curanovic, B.; Kempisty, J.J.; Sudirgo, S.; Lake, R.; Rivas, C.; Thompson, P.E.;
Challenges in integration of Resonant Interband Tunnel Devices with CMOS
2003 / IEEE / 0-7803-7972-1
By: Niu Jin; Kurinec, S.K.; Hirschman, K.D.; Rommel, S.L.; Rice, A.T.; Sudirgo, S.; Thompson, P.E.; Curanovic, B.; Berger, P.R.;
Monolithically integrated Si/SiGe resonant interband tunneling diodes/CMOS MOBILE latch with high voltage swing
2003 / IEEE / 0-7803-8139-4
By: Kurinec, S.K.; Rommel, S.L.; Islam, S.S.; Hirschman, K.D.; Hebding, J.; Thompson, P.E.; Nandgaonkar, R.P.; Sudirgo, S.; Berger, P.R.; Curanovic, B.; Jin, N.;
Electro-refractive low loss MMI-coupled ring resonators
2003 / IEEE / 1-55752-748-2
By: Kwakernaak, M.H.; Adesida, I.; Rommel, S.L.; Bac, J.-O.; Abeles, J.H.; Shellenbarger, Z.A.; An, H.; Mohseni, H.; Lepore, A.N.;
Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR
2004 / IEEE
By: Thompson, P.E.; Ronghua Yu; Berger, P.R.; Heyns, R.M.; Sung-Yong Chung; Niu Jin; Rommel, S.L.;
Overgrown Si/SiGe resonant interband tunnel diodes for integration with CMOS
2004 / IEEE / 0-7803-8284-6
By: Vega, R.; Sudirgo, S.; Berger, P.R.; Niu Jin; Thompson, P.E.; Kurinec, S.K.; Rommel, S.L.; Hirschman, K.D.; Nandgaonkar, R.P.;
High Temperature Characterization of Si/SiGe Resonant Interband Tunnel Diodes
2005 / IEEE / 1-4244-0083-X
By: Kurinec, S.K.; Sudirgo, S.; Pawlik, D.J.; Rommel, S.L.; Berger, P.R.; Thompson, P.E.;
Analysis of the Biasing Conditions and Latching Operation for Si/SiGe Resonant Interband Tunnel Diode Based Tunneling SRAM
2005 / IEEE / 1-4244-0083-X
By: Rommel, S.L.; Pawlik, D.J.; Sudirgo, S.; Berger, P.R.; Thompson, P.E.; Kurinec, S.K.;
NMOS/SiGe Resonant Interband Tunneling Diode Static Random Access Memory
2006 / IEEE / 0-7803-9748-7
By: Sudirgo, S.; Rommel, S.L.; Berger, P.R.; Yu, R.; Park, S.Y.; Daulton, J.W.; Thompson, P.E.; Kurinec, S.K.; Pawlik, D.J.;
25 Years of Microelectronic Engineering Education
2006 / IEEE / 1-4244-0267-0
By: Rommel, S.L.; Widlund, S.; Pearson, R.E.; Jackson, M.A.; Ewbank, D.E.; Hirschman, K.D.; Lane, R.L.; Smith, B.W.; Fuller, L.F.; Kurinec, S.K.; Blondell, S.P.; Gruener, C.; Arquette, M.; Wiegand, M.; Tierney, J.;
Si-Based Resonant Interband Tunnel Diode/CMOS Integrated Memory Circuit
2006 / IEEE / 1-4244-0267-0
By: Pawlik, D.J.; Sudirgo, S.; Berger, P.R.; Thompson, P.E.; Kurinec, S.K.; Rommel, S.L.; Hirschman, K.D.;
Temperature dependent empirical modeling of proximity diffused Si esaki diodes and memory circuits
2007 / IEEE / 978-1-4244-1891-6
By: Pawlik, D.J.; Rommel, S.L.; Berger, P.R.; Anisha, R.; Kurinec, S.K.; Pandharpure, S.; Krom, R.; Muhkerjee, S.;
Simplified Si resonant interband tunnel diodes
2007 / IEEE / 978-1-4244-1891-6
By: Rommel, S.L.; Krom, R.; Pawlik, D.; Berger, P.R.; Jernigan, G.G.; Anisha, R.; Ronghua Yu; Si-Young Park; Thompson, P.E.;
Anneal time study of Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy
2007 / IEEE / 978-1-4244-1891-6
By: Berger, P.R.; Anisha, R.; Park, S.-Y.; Pandharpure, S.; Kurinec, S.K.; Thompson, P.E.; Muhkerjee, S.; Pawlik, D.J.; Krom, R.; Rommel, S.L.;
Record PVCR GaAs-based tunnel diodes fabricated on Si substrates using aspect ratio trapping
2008 / IEEE / 978-1-4244-2377-4
By: Bai, J.; Carroll, M.; Park, J.S.; Li, J.Z.; Cheng, Z.; Hydrick, J.M.; Seabaugh, A.; Kurinec, S.K.; Johnson, K.; Barth, M.; Thomas, P.; Pawlik, D.; Rommel, S.L.; Lochtefeld, A.; Fiorenza, J.G.;
Sub-micron Esaki Tunnel Diode fabrication and characterization
2009 / IEEE / 978-1-4244-6030-4
By: Fiorenza, J.G.; Hydrick, J.M.; Park, J.S.; Li, J.; Cheng, Z.; Rommel, S.L.; Lochtefeld, A.; Barth, M.; Thomas, P.M.; Freeman, E.; Romanczyk, B.; Pawlik, D.J.;

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