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Author: Olsen, G.H.

Results

Reliability of vapor-grown planar In/sub 0.53/Ga/sub 0.47/As/InP p-i-n photodiodes with very high failure activation energy

1988 / IEEE
By: Gasparian, G.; Ban, V.S.; Forrest, S.R.; Olsen, G.H.; Gay, D.;

Comparison of InGaAs/InP p-i-n detectors grown by hydride and organometallic vapor phase epitaxy

1990 / IEEE
By: Lange, M.; Woodruff, K.; Jones, K.A.; Olsen, G.H.; Ban, V.S.;

In/sub 0.53/Ga/sub 0.47/As/InP floating guard ring avalanche photodiodes fabricated by double diffusion

1990 / IEEE
By: Liu, Y.; Hladky, J.; Ackley, D.E.; Forrest, S.R.; Lange, M.J.; Ban, V.S.; Olsen, G.H.; Erickson, G.; Mason, S.;

A planar InP/InGaAs avalanche photodiode with floating guard ring and double diffused junction

1992 / IEEE
By: Lange, M.J.; Hladky, J.; Forrest, S.R.; Liu, Y.; Ackley, D.E.; Olsen, G.H.;

Dark current analysis and characterization of In/sub x/Ga/sub 1-x/As/InAs/sub y/P/sub 1-y/ graded photodiodes with x>0.53 for response to longer wavelengths (>1.7 mu m)

1992 / IEEE
By: Kosonocky, W.F.; Joshi, A.N.; Ban, V.S.; Olsen, G.H.; Linga, K.R.;

Reduction of 1/f noise in multiplexed linear In/sub 0.53/Ga/sub 0.47/As detector arrays via epitaxial doping

1993 / IEEE
By: Ban, V.S.; Olsen, G.H.; Joshi, A.M.; Mohr, D.T.; Lange, M.J.; Mykietyn, E., Sr.;

Reliable operation of lattice-mismatched indium gallium arsenide photodetectors grown on silicon substrates

1990 / IEEE
By: Ackley, D.; Hladkey, J.; Gasparian, G.A.; Ban, V.S.; Rodefeld, D.; Speer, F.D.; Mason, S.; Olsen, G.H.; Forrest, S.R.; Dinkel, N.A.; Woodruff, K.M.; Connolly, J.C.; Erickson, G.;

A three wavelength infrared focal plane array detector element

1994 / IEEE
By: Forrest, S.R.; Dong-Su Kim; Cohen, M.J.; Olsen, G.H.; Lange, M.J.;

1.95-/spl mu/m strained InGaAs-InGaAsP-InP distributed-feedback quantum-well lasers

1994 / IEEE
By: Vermaak, J.S.; Olsen, G.H.; Menna, R.J.; Martinelli, R.U.;

Avalanche gain in InAs_yP/sub 1-y/ (0.1

1995 / IEEE
By: Olsen, G.H.; Forrest, S.R.; Kim, D.S.; Di Giuseppe, N.J.; Martinelli, R.U.; Lange, M.J.;

A monolithically integrated InGaAs-InP p-i-n/JFET focal plane array

1996 / IEEE
By: Forrest, S.R.; Dong-Su Kim; Kosonocky, W.; Olsen, G.H.; Lange, M.J.;

Novel "p-encapsulated" InP JFETs with very low leakage for optoelectronic integration with infrared focal plane arrays

1996 / IEEE / 0-7803-3160-5
By: Lange, M.J.; Forrest, S.R.; Studenkov, P.; Dong-Su Kim; Olsen, G.H.;

A monolithically integrated 1 x 4 switchable photodiode array with preamplifier for programmable frequency filters and optical interconnects

1997 / IEEE
By: Yu, S.; Olsen, G.H.; Lange, M.; Mykietyn, E.; Forrest, S.R.; Thomson, K.J.;

Dark currents in compositionally-graded In/sub x/Ga/sub 1-x/As (.53

1997 / IEEE / 0-7803-3898-7
By: Kim, D.S.; Cohen, M.J.; Lange, M.J.; Olsen, G.H.; Forrest, S.R.;

Tunable photodetectors based on strain compensated GaInAsSb/AlAsSb multiple quantum wells grown by molecular beam epitaxy

1997 / IEEE
By: Hao Lee; Sarathy, J.; Zhao, J.H.; Yan Shi; Olsen, G.H.;

Resonant cavity enhanced heterojunction phototransistors based on GaInAsSb-AlGaAsSb grown by molecular beam epitaxy

1998 / IEEE
By: Yan Shi; Hao Lee; Olsen, G.H.; Sarathy, J.; Zhao, J.H.;

Strain compensated In/sub 1-x/Ga/sub x/As (x<0.47) quantum well photodiodes for extended wavelength operation

1998 / IEEE / 0-7803-4220-8
By: Thomson, K.J.; Gokhale, M.R.; Dries, J.C.; Forrest, S.R.; Olsen, G.H.;

Review Of Recent Developments In Lightwave Devices

1991 / IEEE
By: Olsen, G.H.;

A 2 /spl mu/m cutoff 320/spl times/240 InGaAs NIR camera

1998 / IEEE / 0-7803-4947-4
By: Ettenberg, M.H.; Olsen, G.H.; Cohen, M.J.; Sugg, A.R.; Lange, M.;

InGaAs-InP linear detector arrays for spectroscopic and imaging applications on 75 mm substrates

1998 / IEEE / 0-7803-4947-4
By: Olsen, G.H.; Cohen, M.J.; Ettenberg, M.H.; Lange, M.J.; Sugg, A.R.;

High-temperature CW operation of optically-pumped W-lasers

1998 / IEEE / 0-7803-4947-4
By: Connolly, J.C.; Martinelli, R.U.; Lee, H.; Meyer, J.R.; Olafsen, L.J.; Sugg, A.R.; Aifer, E.A.; Felix, C.L.; Bewley, W.W.; Vurgaftman, I.; Olsen, G.H.;

Progress with 100 mm diameter In/sub 0.53/Ga/sub 0.47/As/InP wafer processing

1999 / IEEE / 0-7803-5562-8
By: Olsen, G.H.; Forrest, S.R.; Cohen, M.J.; Sudol, J.J.; Ettenberg, M.H.; Sugg, A.R.; Lange, M.J.;

A 2.0 /spl mu/m cutoff wavelength separate absorption, charge, and multiplication layer avalanche photodiode using strain-compensated InGaAs quantum wells

1999 / IEEE / 0-7803-5562-8
By: Gokhale, M.R.; Dries, J.C.; Olsen, G.H.; Forrest, S.R.;

Extended wavelength InGaAs detectors-recent progress in new materials for bandgap wavelengths /spl lambda//sub g/>1.65 /spl mu/m

1999 / IEEE / 0-7803-5634-9
By: Dries, J.C.; Olsen, G.H.; Forrest, S.R.; Gokhale, M.R.;

A thin film indium gallium arsenide focal plane array for visible and near infrared hyperspectral imaging

1999 / IEEE / 0-7803-5634-9
By: Lange, M.J.; Cohen, M.J.; Olsen, G.H.; Dixon, P.; Ettenberg, M.H.;

Substrate-thinned indium gallium arsenide/indium phosphide focal plane arrays for imaging from the visible through the near infrared

1999 / IEEE / 1-55752-595-1
By: Lange, M.J.; Dries, J.C.; Forrest, S.R.; Sugg, A.R.; Cohen, M.J.; Vermaak, J.S.; Olsen, G.H.; Ettenberg, M.H.;

Mid-IR broadened-waveguide and angled-grating distributed feedback (/spl alpha/-DFB) "W" quantum well lasers

2000 / IEEE / 0-7803-6259-4
By: Bewley, W.W.; Olsen, G.H.; Vurgaftman, I.; Bartolo, R.E.; Stokes, D.W.; Jurkovic, M.J.; Lindle, J.R.; Meyer, J.R.; Yang, M.-J.; Lee, H.; Menna, R.J.; Martinelli, R.U.; Garbuzov, D.Z.; Connolly, J.C.; Maiorov, M.; Sugg, A.R.; Felix, C.L.;

High power linear arrays of 1.9 /spl mu/m laser diodes

2000 / IEEE / 0-7803-5947-X
By: Vermaak, J.S.; Forrest, S.R.; Gokhale, M.; Olsen, G.H.; Sugg, A.;

Demonstration of a 40 Gb/s, 4 channel optical receiver array

2000 / IEEE / 0-7803-5947-X
By: Dries, J.C.; Olsen, G.H.; Cohen, M.J.; Mykietyn, E.; Brubaker, R.M.; Lange, M.; Bush, M.G.;

Photodiode array spectroscopy for wavelength division multiplexing

2000 / IEEE / 0-7803-5947-X
By: Cohen, M.J.; Sugg, A.R.; Olsen, G.H.; Dixon, P.; Lange, M.J.;

Optically- and electrically-pumped type-II "W" quantum well lasers for the mid IR

2000 / IEEE / 1-55752-634-6
By: Sugg, A.R.; Olsen, G.H.; Connolly, J.C.; Garbuzov, D.Z.; Martinelli, R.U.; Menna, R.J.; Lee, H.; Yang, M.J.; Stokes, D.W.; Olafsen, L.J.; Felix, C.L.; Vurgaftman, I.; Bewley, W.W.; Meyer, J.R.; Maiorov, M.;

Optimization of double diffused floating guarding ring InGaAs/InP avalanche photodiodes

2001 / IEEE / 0-7803-7105-4
By: Dries, J.C.; Jian Wei; Forrest, S.R.; Olsen, G.H.; Hongsheng Wang;

Optimization of 10-Gb/s long-wavelength floating guard ring InGaAs-InP avalanche photodiodes

2002 / IEEE
By: Dries, J.C.; Ran Wei; Forrest, S.R.; Olsen, G.H.; Lange, M.L.; Hongsheng Wang;

Correlation of shunt resistance with InGaAs layer photoluminescence intensity for 2200 nm cutoff InGaAs photodiodes

2002 / IEEE / 0-7803-7320-0
By: Drinker, R.W., III; Olsen, G.H.; Lange, M.J.; Ettenberg, M.H.; Vermaak, J.S.; Fox, M.J.; Bentell, L.J.; Cohen, M.J.;

I-4 CW room-temperature GaAs/InyGa1-yP DH lasers prepared by vapor-phase epitaxy

1976 / IEEE
By: Olsen, G.H.; Nuese, C.J.; Ettenberg, M.;

TP-C4 Vapor-phase growth of 1.3-µm InGaAsP/InP heterojunction lasers, LED's, and APD's

1979 / IEEE
By: Olsen, G.H.; Ettenberg, M.; Nuese, C.J.; Kressel, H.; Botez, D.;

High performance 1.3 µm InGaAsP edge-emitting LEDs

1980 / IEEE
By: Botez, D.; Channin, D.J.; Hawrylo, F.Z.; Olsen, G.H.; Ettenberg, M.;

Low-leakage, high-efficiency, reliable VPE InGaAs 1.0-1.7 µm photodiodes

1981 / IEEE
By: Olsen, G.H.;

The reliability of 1.3 µm emitters and detectors for fiber optics

1981 / IEEE
By: Olsen, G.H.; Ettenberg, M.;

Non-planar VPE growth of low-threshold (<60 mA) current 1.3 µm CW lasers

1982 / IEEE
By: Olsen, G.H.; DiGiuseppe, N.J.; Zamerowski, T.J.;

Large-area and visible response VPE InGaAs photodiodes

1983 / IEEE
By: Olsen, G.H.; Webb, P.P.;

VIA-4 reliability of VPE long-wavelength lasers and detectors

1983 / IEEE
By: Olsen, G.H.; DiGiuseppe, N.J.; Webb, P.P.; Zamerowski, T.J.; Appert, J.R.; Harvey, M.G.;

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