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Author: Nguyen, L.D.

Results

0.2- mu m gate-length atomic-planar doped pseudomorphic Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.25/Ga/sub 0.75/As MODFETs with f/sub T/ over 120 GHz
1988 / IEEE
By: Tasker, P.J.; Radulescu, D.C.; Nguyen, L.D.; Eastman, L.F.; Schaff, W.J.;
Charge control, DC, and RF performance of a 0.35- mu m pseudomorphic AlGaAs/InGaAs modulation-doped field-effect transistor
1988 / IEEE
By: Nguyen, L.D.; Eastman, L.F.; Foisy, M.C.; Palmateer, L.F.; Lepore, A.N.; Tasker, P.J.; Schaff, W.J.;
Influence of quantum well width on DC and RF device performance in pseudomorphic Al/sub 0.30/Ga/sub 0.70/As/In/sub 0.25/Ga/sub 0.75/As MODFETs
1988 / IEEE
By: Eastman, L.F.; Foisy, M.C.; Tasker, P.J.; Radulescu, D.C.; Nguyen, L.D.;
Design, fabrication, and characterization of ultra high speed AlGaAs/InGaAs MODFETs
1988 / IEEE
By: Nguyen, L.D.; Eastman, L.F.; Radulescu, D.C.; Tasker, P.J.;
Characterization of ultra-high-speed pseudomorphic AlGaAs/InGaAs (on GaAs) MODFETs
1989 / IEEE
By: Tasker, P.J.; Nguyen, L.D.; Eastman, L.F.; Radulescu, D.C.;
Low-temperature buffer AlInAs/GaInAs on InP HEMT technology for ultra-high-speed integrated circuits
1989 / IEEE
By: Thompson, M.S.; Nguyen, L.D.; Mishra, U.K.; Larson, L.E.; Brown, A.S.; Hooper, C.E.; Delaney, M.J.; Chou, C.S.; Jensen, J.F.;
Novel high performance self-aligned 0.15 micron long T-gate AlInAs-GaInAs HEMTs
1989 / IEEE / 0-7803-0817-4
By: Mishra, U.K.; Rosenbaum, S.E.; Nguyen, L.D.; Thompson, M.; Jelloian, L.M.; Brown, A.S.;
Ultra-high speed modulation-doped field-effect transistors: a tutorial review
1992 / IEEE
By: Mishra, U.K.; Larson, L.E.; Nguyen, L.D.;
650-AA self-aligned-gate pseudomorphic Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.2/In/sub 0.8/As high electron mobility transistors
1992 / IEEE
By: Nguyen, L.D.; Matloubian, M.; Larson, L.E.; Jelloian, L.M.; Thompson, M.A.; Brown, A.S.;
High power and high efficiency AlInAs/GaInAs on InP HEMTs
1991 / IEEE / 0-87942-591-1
By: Larson, L.E.; Brown, A.S.; Nguyen, L.D.; Matloubian, M.; Thompson, M.A.; Melendes, M.A.;
AlInAs/GaInAs on InP HEMT low noise MMIC amplifiers
1991 / IEEE / 0-87942-591-1
By: Thompson, M.A.; Litvin, K.; Rosenbaum, S.E.; Pierson, D.; Mishra, U.; Chou, C.S.; Henige, J.; Lui, M.; Ngo, C.; Nguyen, L.D.; Larson, L.E.;
50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors
1992 / IEEE
By: Thompson, M.A.; Brown, A.S.; Nguyen, L.D.; Jelloian, L.M.;
InP-based inverted high electron mobility transistors
1991 / IEEE
By: Schmitz, A.E.; Metzger, R.A.; Brown, A.S.; Nguyen, L.D.;
High-power V-band AlInAs/GaInAs on InP HEMTs
1993 / IEEE
By: Larson, L.E.; Matloubian, M.; Melendes, M.A.; Nguyen, L.D.; Brown, A.S.; Delancey, M.J.; Henige, J.A.; Thompson, M.A.; Rhodes, R.A.; Pence, J.E.;
20-GHz high-efficiency AlInAs-GaInAs on InP power HEMT
1993 / IEEE
By: Larson, L.; Brown, A.S.; Melendes, M.A.; Nguyen, L.D.; Delaney, M.; Matloubian, M.; Pence, J.; Rhodes, R.; Thompson, M.;
Fabrication of a 80 nm self-aligned T-gate AlInAs/GaInAs HEMT
1990 / IEEE
By: Lui, M.; Thompson, M.; Jelloian, L.M.; Nguyen, L.D.;
GaInAs/InP composite channel HEMT's
1993 / IEEE
By: Larson, L.E.; Liu, T.; Lui, M.; Jelloian, L.M.; Matloubian, M.; Le, M.V.; Nguyen, L.D.;
V-band high-efficiency high-power AlInAs/GaInAs/InP HEMT's
1993 / IEEE
By: Matloubian, M.; Pence, J.E.; Rhodes, R.A.; Thompson, M.A.; Delaney, M.J.; Larson, L.E.; Nguyen, L.D.; Brown, A.S.; Jelloian, L.M.;
V-band high-efficiency high-power AlInAs/GaInAs/InP HEMTs
1993 / IEEE / 0-7803-1209-0
By: Larson, L.E.; Jelloian, L.M.; Nguyen, L.D.; Brown, A.S.; Delaney, M.J.; Matloubian, M.; Pence, J.E.; Rhodes, R.A.; Thompson, M.A.;
Influence of quantum-well width on device performance of Al/sub 0.30/Ga/sub 0.70/As/In/sub 0.25/Ga/sub 0.75/As (on GaAs) MODFETs
1989 / IEEE
By: Eastman, L.F.; Tasker, P.J.; Foisy, M.C.; Radulescu, D.C.; Nguyen, L.D.;
The growth of high performance In/sub x/Ga/sub 1-x/As(0.52
1994 / IEEE / 0-7803-1476-X
By: Brown, A.S.; Larson, L.E.; Henige, J.A.; Nguyen, L.D.; Schmitz, A.E.;
Very low noise and low power operation of cryogenic AlInAs/GaInAs/InP HFET's
1994 / IEEE / 0-7803-1778-5
By: Thompson, M.A.; Liu, T.; Lui, M.; Nguyen, L.D.; Pospieszalski, M.W.; Delaney, M.I.;
A 17 dB gain, 0.1-70 GHz InP HEMT amplifier IC
1994 / IEEE / 0-7803-1844-7
By: Nguyen, L.D.; Le, M.V.; Van Tuyl, R.L.; Madden, C.J.;
155- and 213-GHz AlInAs/GaInAs/InP HEMT MMIC oscillators
1995 / IEEE
By: Kormanyos, B.K.; Rosenbaum, S.E.; Rebeiz, G.M.; Katehi, L.P.B.; Thompson, M.A.; Nguyen, L.D.; Larson, L.E.; Brown, A.S.; Matloubian, M.; Jelloian, L.M.;
Q- and E-band cryogenically-coolable amplifiers using AlInAs/GaInAs/InP HEMTs
1995 / IEEE / 0-7803-2581-8
By: Thompson, M.A.; Lakatosh, W.J.; Pospieszalski, M.W.; Delaney, M.J.; Nguyen, L.D.; Minh Le; Takyiu Lin; Lui, M.;
Capacitive-division traveling-wave amplifier with 340 GHz gain-bandwidth product
1995 / IEEE / 0-7803-2581-8
By: Jensen, J.F.; Larson, L.; Rodwell, M.J.W.; Le, M.V.; Nguyen, L.D.; Yu, R.Y.; Agarwal, B.; Pusl, J.; Pullela, R.; Case, M.G.;
Capacitive-division traveling-wave amplifier with 340 GHz gain/bandwidth product
1995 / IEEE / 0-7803-2590-7
By: Pusl, J.; Case, M.G.; Yu, R.Y.; Jensen, J.F.; Larson, L.; Rodwell, M.J.W.; Le, M.V.; Nguyen, L.D.; Pullela, R.; Agarwal, B.;
High threshold uniformity, millimeter-wave p/sup +/-GaInAs/n-AlInAs/GaInAs JHEMTs
1995 / IEEE
By: Mishra, U.K.; Nguyen, L.D.; Wilson, R.G.; Thompson, M.A.; Liu, T.Y.; Shealy, J.B.;
High uniformity 75 GHz junction HEMTs (JHEMTs) using a dry-etch gate technology
1995 / IEEE / 0-7803-2442-0
By: Nguyen, L.D.; Mishra, U.K.; Hooper, C.E.; Sun, H.C.; Thompson, M.A.; Hafizi, M.; Shealy, J.B.;
High-efficiency GaAs-based pHEMT power amplifier technology for 1-18 GHz
1996 / IEEE / 0-7803-3246-6
By: Case, M.G.; Docter, D.P.; Hu, M.; Schmitz, A.E.; Thompson, M.A.; Shealy, J.B.; Brown, J.J.; Pusl, J.A.; Nguyen, L.D.;
A novel 75 GHz InP HEMT dynamic divider
1996 / IEEE / 0-7803-3504-X
By: Snook, D.R.; Madden, C.J.; Nguyen, L.D.; Le, M.V.; Van Tuyl, R.L.;
Millimeter-wave waveguide-bandwidth cryogenically-coolable InP HEMT amplifiers
1997 / IEEE / 0-7803-3814-6
By: Nguyen, L.D.; Wollack, E.; Lakatosh, W.J.; Pospieszalski, M.W.; Takyiu Liu; Lui, M.; Minh Le;
High-efficiency L and S-band power amplifiers with high-breakdown GaAs-based pHEMTs
1998 / IEEE / 0-7803-4471-5
By: Brown, J.J.; Widman, R.D.; Pusl, J.A.; Nguyen, L.D.; BeZaire, M.; Kaur, N.; Hu, M.;
Carrier Deconfinement Limited Velocity In Pseudomorphic AlGaAsiin GaAs Modulation-doped Field Effect Transistors (MODFET's)
1987 / IEEE
By: Tasker, P.J.; Foisy, M.C.; Nguyen, L.D.; Eastman, L.F.; Lepore, A.N.; Schaff, W.J.;
Electronic & optoelectronic components for fiber transmission at bandwidths approaching 100 ghz
1995 / IEEE / 0-7803-2448-X
By: Pullela, R.; Bowers, J.E.; Rodwell, M.J.W.; Nguyen, L.D.; Pusl, J.; Giboney, K.;
High-performance AlGaAs/InGaAs/GaAs PHEMTs for K and Ka-band applications
1999 / IEEE / 0-7803-5135-5
By: Nguyen, L.D.; Brown, J.J.; Janke, P.B.; Widman, R.D.; Hooper, C.E.; Docter, D.P.; Harvey, D.S.; Ming Hu; Kiziloglu, K.; Burkhart, S.R.;
Design and performance of wideband, low-noise, millimeter-wave amplifiers for microwave anisotropy probe radiometers
2000 / IEEE / 0-7803-6280-2
By: Lui, M.; Le, M.; Nguyen, L.D.; Webber, J.; Pospieszalski, M.W.; Thacker, D.; Bailey, N.; Wollack, E.J.;
Design and performance of wideband, low-noise, millimeter-wave amplifiers for Microwave Anisotropy Probe radiometers
2000 / IEEE / 0-7803-5687-X
By: Webber, J.; Thacker, D.; Bailey, N.; Wollack, E.J.; Nguyen, L.D.; Pospieszalski, M.W.; Lui, M.; Le, N.;
GaInAsAnP composite channel HEMTs
1993 / IEEE
By: Jellolan, L.M.; Matioubian, M.; Le, M.V.; Nguyen, L.D.; Larson, L.E.; Liu, T.; Lul, M.;
Secured wireless digital video surveillance for distributed enterprises
2004 / IEEE / 0-7803-8521-7
By: Vu, L.N.; Nguyen, L.D.;
Comments on "A new low-noise AlGaAs/GaAs 2DEG FET with a surface undoped layer"
1987 / IEEE
By: Tasker, P.J.; Nguyen, L.D.; Schaff, W.J.;
Improving the behavior of an electro-optic modulator by controlling its temperature
2009 / IEEE / 978-1-4244-5139-5
By: Journet, B.; Nguyen, L.D.; Bui, D.T.;

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