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Author: Modelli, A.

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Electrical and Thermal Behavior of Tellurium Poor GeSbTe Compounds for Phase Change Memory
2012 / IEEE / 978-1-4673-1081-9
By: Lavizzari, S.; Tortorelli, I.; Redaelli, A.; Boniardi, M.; Bez, R.; Pirovano, A.; Bresolin, C.; Modelli, A.; Erbetta, D.; Varesi, E.; Pellizzer, F.;
Correlated fluctuations and noise spectra of tunneling and substrate currents before breakdown in thin-oxide MOS devices
1990 / IEEE
By: Neri, B.; Saletti, R.; Modelli, A.; Olivo, P.;
Charge loss in EPROM due to ion generation and transport in interlevel dielectric
1990 / IEEE
By: Ghidini, G.; Crisenza, G.; Tosi, M.; Modelli, A.; Manzini, S.;
Multilevel flash cells and their trade-offs
1996 / IEEE / 0-7803-3393-4
By: Crisenza, G.; Roy, A.; Kazerounian, R.; Eitan, B.; Modelli, A.; Cappelletti, P.;
Technological and design constraints for multilevel flash memories
1996 / IEEE / 0-7803-3650-X
By: Modelli, A.; Manstretta, A.; Calligaro, C.; Torelli, G.;
A 40 mm/sup 2/ 3 V 50 MHz 64 Mb 4-level cell NOR-type flash memory
2000 / IEEE / 0-7803-5853-8
By: Kai, Y.; Shimizu, S.; Ohnakado, T.; Sugihara, I.; Bez, R.; Grossi, A.; Modelli, A.; Khouri, P.O.; Torelli, G.; Campardo, G.; Micheloni, R.; Commodaro, S.; Yero, E.; Zammabio, M.; Mognoni, S.; Sacco, A.; Picca, M.; Manstleita, A.; Scotti, M.; Motta, I.; Golla, C.; Pierin, A.; Ohba, A.; Fulatsuya, T.; Makabe, R.; Kawai, S.;
40-mm/sup 2/ 3-V-only 50-MHz 64-Mb 2-b/cell CHE NOR flash memory
2000 / IEEE
By: Commodaro, S.; Yero, E.; Campardo, G.; Torelli, G.; Khouri, O.; Visconti, A.; Modelli, A.; Grossi, A.; Bez, R.; Pierin, A.; Micheloni, R.; Golla, C.; Motta, I.; Scotti, M.; Manstretta, A.; Picca, M.; Sacco, A.; Mognoni, S.; Zammattio, M.;
A new conduction mechanism for the anomalous cells in thin oxide flash EEPROMs
2001 / IEEE / 0-7803-6587-9
By: Gilardoni, F.; Modelli, A.; Spinelli, A.S.; Ielmini, D.;
Basic feasibility constraints for multilevel CHE-programmed flash memories
2001 / IEEE
By: Torelli, G.; Manstretta, A.; Modelli, A.;
Equivalent cell approach for extraction of the SILC distribution in flash EEPROM cells
2002 / IEEE
By: Ielmini, D.; Modelli, A.; Lacaita, A.L.; Spinelli, A.S.;
Radiation effects on floating-gate memory cells
2001 / IEEE
By: Wyss, J.; Chimenton, A.; Pellati, P.; Cellere, G.; Paccagnella, A.; Larcher, L.; Modelli, A.;
A statistical model for SILC in flash memories
2002 / IEEE
By: Modelli, A.; Lacaita, A.L.; Spinelli, A.S.; Ielmini, D.;
Anomalous charge loss from floating-gate memory cells due to heavy ions irradiation
2002 / IEEE
By: Wyss, J.; Chimenton, A.; Larcher, L.; Paccagnella, A.; Cellere, G.; Modelli, A.; Candelori, A.;
Introduction to flash memory
2003 / IEEE
By: Visconti, A.; Modelli, A.; Camerlenghi, E.; Bez, R.;
Data retention after heavy ion exposure of floating gate memories: analysis and simulation
2003 / IEEE
By: Chimenton, A.; Paccagnella, A.; Cellere, G.; Larcher, L.; Modelli, A.; Candelori, A.;
Advanced flash memory reliability
2004 / IEEE / 0-7803-8528-4
By: Bez, R.; Visconti, A.; Modelli, A.;
Novel /spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applications
2004 / IEEE / 0-7803-8289-7
By: Pellizzer, F.; Pirovano, A.; Bez, R.; Cappelletti, P.; Casagrande, G.; Lacaita, A.; Lowrey, T.; Varesi, E.; Modelli, A.; Zonca, R.; Spandre, A.; Piva, R.; Morandi, R.; Marangon, T.; Cadeo, S.; Besana, P.; Benvenuti, A.; Tosi, M.; Zuliani, P.; Scaravaggi, M.; Magistretti, M.; Ottogalli, F.;
What we have learned on flash memory reliability in the last ten years
2004 / IEEE / 0-7803-8684-1
By: Visconti, A.; Modelli, A.; Bez, R.; Cappelletti, P.;
Electric field and current dependence of SiO2intrinsic breakdown
1984 / IEEE
By: Ricco, B.; Modelli, A.;
Flash Memory Reliability
1998 / IEEE / 2-86332-234-6
By: Modelli, A.; Cappelletti, P.;
Dynamics of Fast-Erasing Bits in Flash Memories
2000 / IEEE / 2-86332-248-6
By: Pellati, P.; Chimenton, A.; Olivo, P.; Modelli, A.;
/spl mu/trench phase-change memory cell engineering and optimization
2005 / IEEE / 0-7803-9203-5
By: Redaelli, A.; Petruzza, P.; Pellizzer, F.; Pirovano, A.; Bez, R.; Lacaita, A.L.; Ielmini, D.; Modelli, A.; Marangon, T.; Bedeschi, F.; Tortorelli, I.; Mazzone, G.; Scaravaggi, M.; Magistretti, M.; Piva, R.; Cecchini, R.; Besana, P.; Tosi, M.; Ottogalli, F.; Varesi, E.;
Impact of material composition on the write performance of phase-change memory devices
2010 / IEEE / 978-1-4244-6721-1
By: Pellizzer, F.; Bez, R.; Modelli, A.; Erbetta, D.; Bresolin, C.; Magistretti, M.; Varesi, E.; Allegra, M.; Tortorelli, I.; Pirovano, A.; Redaelli, A.; Lacaita, A.L.; Ielmini, D.; Boniardi, M.;

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