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Author: Meneghesso, G.

Results

Near-UV Irradiation Effects on Pentacene-Based Organic Thin Film Transistors

2011 / IEEE
By: Kovac, J.; Bari, D.; Cester, A.; Wrachien, N.; Meneghesso, G.; Donoval, D.; Jakabovic, J.;

Analysis of GaN HEMT Failure Mechanisms During DC and Large-Signal RF Operation

2012 / IEEE
By: Chini, A.; Zanoni, E.; Meneghesso, G.; Fantini, F.; Di Lecce, V.;

Analysis of Defect-Related Localized Emission Processes in InGaN/GaN-Based LEDs

2012 / IEEE
By: Butendheich, R.; Humphreys, C.; Dandan Zhu; Trivellin, N.; Vaccari, S.; Leirer, C.; Zanoni, E.; Meneghini, M.; Meneghesso, G.; Hahn, B.;

Visible Light and Low-Energy UV Effects on Organic Thin-Film Transistors

2012 / IEEE
By: Cester, A.; Wrachien, N.; Meneghesso, G.; Donoval, D.; Kovac, J.; Jakabovic, J.; Bari, D.;

Improved Tolerance Against UV and Alpha Irradiation of Encapsulated Organic TFTs

2012 / IEEE
By: Kovac, J.; Bari, D.; Cester, A.; Wrachien, N.; Jakabovic, J.; Meneghesso, G.; Donoval, D.; Weis, M.;

Analysis of Diffusion-Related Gradual Degradation of InGaN-Based Laser Diodes

2012 / IEEE
By: Zanoni, E.; Ohno, H.; Meneghini, M.; Orita, K.; Meneghesso, G.; Trivellin, N.; Tanaka, T.; Yuri, M.; Takigawa, S.; Ikedo, N.;

Time- and Field-Dependent Trapping in GaN-Based Enhancement-Mode Transistors With p-Gate

2012 / IEEE
By: Meneghesso, G.; Zanoni, E.; Ueda, D.; Tanaka, T.; Ueda, T.; de Santi, C.; Meneghini, M.;

Reliability Study of Ruthenium-Based Dye-Sensitized Solar Cells (DSCs)

2012 / IEEE
By: Meneghesso, G.; Di Carlo, A.; Reale, A.; Brown, T.M.; Bari, D.; Wrachien, N.; Cester, A.; Ciammaruchi, L.;

Angular and strain dependence of heavy-ions induced degradation in SOI FinFETs

2009 / IEEE / 978-1-4577-0493-2
By: Griffoni, A.; Claeys, C.; Simoen, E.; Paccagnella, A.; Meneghesso, G.; Gerardin, S.;

A positive exploitation of ESD events: Micro-welding induction on ohmic MEMS contacts

2011 / IEEE / 978-1-58537-193-8
By: Meneghesso, G.; Iannacci, J.; Tazzoli, A.;

Hot electrons and time-to-breakdown induced degradation in AlGaN/GaN HEMTs

2012 / IEEE / 978-1-4577-1438-2
By: Zanoni, E.; Meneghesso, G.; Meneghini, M.;

Analysis of the Reliability of AlGaN/GaN HEMTs Submitted to On-State Stress Based on Electroluminescence Investigation

2013 / IEEE
By: Zanoni, E.; Meneghesso, G.; Meneghini, M.;

Impact wear and other contact effects on the electro-mechanical reliability of MEMS

2014 / IEEE
By: Soma, A.; De Pasquale, G.; Meneghesso, G.; Barbato, M.;

Gallium nitride based HEMTs for power applications: High field trapping issues

2014 / IEEE
By: Meneghini, M.; Zanoni, E.; Meneghesso, G.;

Temperature-Dependent Dynamic Rmathrm mathrmscriptstyle ON in GaN-Based MIS-HEMTs: Role of Surface Traps and Buffer Leakage

2015 / IEEE
By: Banerjee, A.; Dalcanale, S.; Silvestri, R.; Vanmeerbeek, P.; Bisi, D.; Moens, P.; Meneghesso, G.; Zanoni, E.; Meneghini, M.;

A Novel Technique to Alleviate the Stiction Phenomenon in Radio Frequency Microelectromechanical Switches

2015 / IEEE
By: Barbato, M.; Meneghesso, G.;

Double Control Gate Field-Effect Transistor for Area Efficient and Cost Effective Applications

2014 / IEEE
By: Zanoni, E.; Barbato, M.; Stocco, A.; Marino, F.A.; Meneghesso, G.;

OFF-State Degradation of AlGaN/GaN Power HEMTs: Experimental Demonstration of Time-Dependent Drain-Source Breakdown

2014 / IEEE
By: Hurkx, G.A.M.; Bertin, M.; Cibin, G.; Meneghini, M.; Ivo, P.; Meneghesso, G.; Croon, J.A.; Sonsky, J.; Zanoni, E.;

A Combined Mechanical and Electrical Characterization Procedure for Investigating the Dynamic Behavior of RF-MEMS Switches

2014 / IEEE
By: Giliberto, V.; Barbato, M.; Meneghesso, G.; Cester, A.;

Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs

2014 / IEEE
By: Van Hove, M.; Stoffels, S.; Marcon, D.; Marino, F.A.; Decoutere, S.; Bisi, D.; Zanoni, E.; Meneghesso, G.; Meneghini, M.;

Recovery of low temperature electron trapping in AlGaAs/InGaAs PM-HEMTs due to impact-ionization

1995 / IEEE
By: Meneghesso, G.; Canali, C.; Zanoni, E.; Paccagnella, A.; De Bortoli, E.;

Trapped charge modulation: a new cause of instability in AlGaAs/InGaAs pseudomorphic HEMT's

1996 / IEEE
By: De Bortoli, E.; Cova, P.; Canali, C.; Meneghesso, G.; Zanoni, E.;

On temperature and hot electron induced degradation in AlGaAs/InGaAs PM-HEMT's

1995 / IEEE / 0-7803-2537-0
By: De Bortoli, E.; Meneghesso, G.; Menozzi, R.; Cova, P.;

Enhancement and degradation of drain current in pseudomorphic AlGaAs/InGaAs HEMTs induced by hot-electrons

1995 / IEEE / 0-7803-2031-X
By: De Bortoli, E.; Cova, P.; Canali, C.; Zanoni, E.; Menozzi, R.; Meneghesso, G.; Fantini, F.;

Open channel impact-ionization effects in InP-based HEMT's and their dependence on channel quantization and temperature

1996 / IEEE / 0-7803-3358-6
By: Brown, J.; Matloubian, M.; Meneghesso, G.; Zanoni, E.; Liu, T.; Neviani, A.; Mion, A.; Canali, C.;

Effects of channel quantization and temperature on off-state and on-state breakdown in composite channel and conventional InP-based HEMTs

1996 / IEEE / 0-7803-3393-4
By: Takyiu Liu; Hafizi, M.; Brown, J.; Matloubian, M.; Neviani, A.; Canali, C.; Meneghesso, G.; Zanoni, E.; Mion, A.; Manfredi, M.; Pavesi, M.;

Neutron induced damage in GaAs MESFETs

1996 / IEEE / 0-7803-3534-1
By: Paccagnella, A.; Meneghesso, G.; Canali, C.; Pessina, G.; Fedyakin, N.; Camin, D.V.; Gasparetto, G.;

Study of neutron damage in GaAs MESFETs

1997 / IEEE
By: Camin, D.V.; Paccagnella, A.; Meneghesso, G.; Canali, C.; Pessina, G.; Fedyakin, N.;

Positive temperature dependence of the electron impact ionization coefficient in In/sub 0.53/Ga/sub 0.47/As/InP HBTs

1997 / IEEE
By: Meneghesso, G.; Neviani, A.; Canali, C.; Hafizi, M.; Zanoni, E.;

Breakdown behavior of low-power pseudomorphic AlGaAs/InGaAs 2-D MESFET's

1998 / IEEE
By: Hurt, M.J.; Shur, M.S.; Tsai, R.; Peatman, W.C.B.; Zanoni, E.; Meneghesso, G.;

Characterization of hole transport phenomena in AlGaAs-InGaAs HEMT's biased in impact-ionization regime

1998 / IEEE / 0-7803-4995-4
By: Meneghesso, G.; Di Carlo, A.; Zanoni, E.; Pavesi, M.; Canali, C.; Manfredi, M.;

Improvement of DC, low frequency and reliability properties of InAlAs/InGaAs InP-based HEMTs by means of an InP etch stop layer

1998 / IEEE / 0-7803-4774-9
By: Buttari, D.; Meneghesso, G.; Zanoni, E.; Canali, C.; Perin, E.;

Breakdown and low-temperature anomalous effects in 6H SiC JFETs

1998 / IEEE / 0-7803-4774-9
By: Zanoni, E.; Canali, C.; Castaldini, A.; Cavallini, A.; Verzellesi, G.; Bartolini, A.; Meneghesso, G.;

Bulk and surface effects of hydrogen treatment on Al/Ti-gate AlGaAs-GaAs power HFETs

1999 / IEEE / 0-7803-5220-3
By: Lanzieri, C.; Dieci, D.; Menozzi, R.; Gaddi, R.; Zanoni, E.; Canali, C.; Meneghesso, G.;

Electroluminescence analysis of HFET's breakdown

1999 / IEEE
By: Meneghesso, G.; Gaddi, R.; Zanoni, E.; Canali, C.; Peroni, M.; Pavesi, M.;

Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMTs by means of electroluminescence

2000 / IEEE
By: Pavesi, M.; Manfredi, M.; Grave, T.; Meneghesso, G.; Zanoni, E.; Canali, C.;

Temperature coefficient of on-state breakdown in InP- and GaAs-based heterostructure FETs

1999 / IEEE / 0-7803-5298-X
By: Tomasi, T.; Dieci, D.; Zanoni, E.; Canali, C.; Meneghesso, G.; Buttari, D.;

Monte Carlo study of the dynamic breakdown effects in HEMT's

2000 / IEEE
By: Zandler, G.; Lugli, P.; Rossi, L.; Di Carlo, A.; Zanoni, E.; Jackson, M.; Meneghesso, G.;

Pulsed measurements and circuit modeling of a new breakdown mechanism of MESFETs and HEMTs

2000 / IEEE / 0-7803-5860-0
By: Maretto, M.; Buttari, D.; Meneghesso, G.; Zanoni, E.; Massari, G.;

ESD robustness of smart-power protection structures evaluated by means of HBM and TLP tests

2000 / IEEE / 0-7803-5860-0
By: Meneghesso, G.; Zanoni, E.; Contiero, C.; Novarini, E.; Santirosi, S.;

Hole impact ionization coefficient in [100]-oriented In/sub 0.53/Ga/sub 0.47/As based on pnp InAlAs/InGaAs HBTs

2000 / IEEE / 0-7803-6320-5
By: Chini, A.; Buttari, D.; Hsu, S.S.H.; Pavlidis, D.; Sawdai, D.; Zanoni, E.; Meneghesso, G.;

Turn-on speed of grounded gate NMOS ESD protection transistors

1996 / IEEE / 0-7803-3369-1
By: Meneghesso, G.; Mouthhaan, A.J.; Kuper, F.G.; Luchies, J.R.M.;

Drain current DLTS analysis of recoverable and permanent degradation effects in AlGaAs/GaAs and AlGaAs/InGaAs HEMT'S

1996 / IEEE / 0-7803-3369-1
By: Canali, C.; Perrino, N.; Haddab, Y.; Meneghesso, G.; Zanoni, E.;

Diagnosis of trapping phenomena in GaN MESFETs

2000 / IEEE / 0-7803-6438-4
By: Chini, A.; Meneghesso, G.; Gaquiere, C.; Boudart, B.; Pavesi, M.; Manfredi, M.; Zanoni, E.;

Measurements of the InGaAs hole impact ionization coefficient in InAlAs/InGaAs pnp HBTs

2001 / IEEE
By: Chini, A.; Buttari, D.; Hsu, S.S.H.; Pavlidis, D.; Sawdai, D.; Zanoni, E.; Meneghesso, G.;

Trap characterization in buried-gate n-channel 6H-SiC JFETs

2001 / IEEE
By: Zanoni, E.; Canali, C.; Cavallini, A.; Verzellesi, G.; Chini, A.; Meneghesso, G.;

Dependence of impact ionization and kink on surface-deep-level dynamics in AlGaAs/GaAs HFETs

2001 / IEEE / 0-7803-7049-X
By: Lanzieri, C.; Zanoni, E.; Meneghesso, G.; Chini, A.; Canali, C.; Vicini, L.; Verzellesi, G.; Mazzanti, A.;

Trap energetic and spatial localization in buried-gate 6H-SiC JFETs by means of numerical device simulation

2001 / IEEE
By: Cavallini, A.; Meneghesso, G.; Verzellesi, G.; Zanoni, E.;

Systematic characterization of Cl₂ reactive ion etching for improved ohmics in AlGaN/GaN HEMTs

2002 / IEEE
By: Mishra, U.K.; DenBaars, S.P.; Coffie, R.; Shen, L.; Zhang, N.Q.; Buttari, D.; Moran, B.; Zanoni, E.; Meneghesso, G.; Chini, A.; Heikman, S.;

Systematic characterization of Cl₂ reactive ion etching for gate recessing in AlGaN/GaN HEMTs

2002 / IEEE
By: Heikinan, S.; Zhang, N.Q.; Coffie, R.; Meneghesso, G.; Chavarkar, P.; Zanoni, E.; Shen, L.; Chini, A.; Buttari, D.; Mishra, U.K.; Zheng, C.; Xing, H.;

Physics-based explanation of kink dynamics in AlGaAs/GaAs HFETs

2002 / IEEE
By: Zanoni, E.; Meneghesso, G.; Canali, C.; Verzellesi, G.; Mazzanti, A.;

30-nm two-step recess gate InP-Based InAlAs/InGaAs HEMTs

2002 / IEEE
By: Yokoyama, H.; Suemitsu, T.; Zanoni, E.; Meneghesso, G.; Enoki, T.; Ishii, T.;

Degradation mechanisms of GaN-based LEDs after accelerated DC current aging

2002 / IEEE / 0-7803-7462-2
By: Meneghesso, G.; Eliashevich, I.; Du, S.; Scamarcio, G.; Castaldini, A.; Cavallini, A.; Zanoni, E.; Rampazzo, F.; Pierobon, R.; Levada, S.;

Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT's

2002 / IEEE / 0-7803-7462-2
By: Verzellesi, G.; Zanoni, E.; Canali, C.; Mishra, U.K.; Chini, A.; Meneghesso, G.; Rampazzo, F.; Pierobon, R.;

Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs

2003 / IEEE
By: Chini, A.; Meneghesso, G.; Zanoni, E.; Maretto, M.;

Channel thickness dependence of breakdown dynamic in InP-based lattice-matched HEMTs

2003 / IEEE
By: Zanoni, E.; Meneghesso, G.; Lugli, P.; Di Carlo, A.; Sleiman, A.; Thobel, J.L.;

Failure mechanisms of GaN-based LEDs related with instabilities in doping profile and deep levels

2004 / IEEE / 0-7803-8315-X
By: Pavesi, M.; Rossi, F.; Armani, N.; Salviati, G.; Zanoni, E.; Levada, S.; Manfredi, M.; Eliashevich, I.; Du, S.; Meneghesso, G.; Castaldini, A.; Cavallini, A.;

2004 / IEEE
By: Mishra, U.K.; Chini, A.; Pierobon, R.; Rampazzo, F.; Canali, C.; Verzellesi, G.; Meneghesso, G.; Zanoni, E.;

Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based beterostructure FETs

2003 / IEEE / 0-7908-0104-3
By: Canali, C.; Mazzanti, A.; Verzellesi, G.; Zanoni, E.; Chini, A.; Meneghesso, G.;

Low frequency noise characterization of the GaN LEDs

2004 / IEEE / 0-7803-8335-7
By: Meneghesso, G.; Kuzmik, J.; Vandamme, L.K.J.; Bychikhin, S.; Pogany, D.;

Analysis of hot carrier aging degradation in GaN MESFETs

2004 / IEEE / 0-7803-8335-7
By: Boudart, B.; Pierobon, R.; Zanoni, E.; Meneghesso, G.; Rampazzo, F.; Theron, D.; Gaquiere, C.; Pacetta, D.;

Study of breakdown dynamics in InAlAs/InGaAs/InP HEMTs with gate length scaling down to 80 nm

2004 / IEEE / 0-7803-8595-0
By: Meneghesso, G.; Bertazzo, M.; De Pellegrin, T.; Clonfero, F.; Zanoni, E.; Pierobon, R.; Enoki, T.; Rampazzo, F.; Suemitsu, T.;

ESD induced damage on ultra-thin gate oxide MOSFETs and its impact on device reliability

2005 / IEEE / 0-7803-8803-8
By: Paccagnella, A.; Tazzoli, A.; Gerardin, S.; Cester, A.; Meneghesso, G.; Ghidini, G.; Zanoni, E.;

Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC

2005 / IEEE / 0-7803-8803-8
By: Pierobon, R.; Meneghesso, G.; Verzellesi, G.; Chini, A.; Basile, A.F.; Kordos, P.; Bernat, J.; Zanoni, E.; Tamiazzo, G.; Rampazzo, F.;

Time domain approach for the evaluation of RC delays effects in ULSI interconnect lines

2005 / IEEE / 0-7803-9054-7
By: Biasio, M.; Bortesi, L.; Vendrame, L.; Meneghesso, G.;

HBM and CDM ESD stress test results in 0.6 um CMOS structures

1997 / IEEE / 2-86332-221-4
By: Pavan, P.; Brambilla, M.; Colombo, P.; Grapputo, N.; Meneghesso, G.; Zanoni, E.;

Parasitic bipolar effects leading to on-state breakdown in 2D-MESFETs

1997 / IEEE / 2-86332-221-4
By: Shur, M.; Meneghesso, G.; Zanoni, E.; Canali, C.; Neviani, A.; Peatman, W.C.B.; Hurt, M.; Pavesi, M.;

Off-State Breakdown in GaAs Power HFETs

1999 / IEEE / 2-86332-245-1
By: Dieci, D.; Menozzi, R.; Cova, P.; Meneghesso, G.; Pavesi, M.; Canali, C.;

Breakdown triggering in PM-HEMTs studied by means of Monte Carlo simulator

1999 / IEEE / 2-86332-245-1
By: Meneghesso, G.; Lugli, P.; Rossi, L.; Di Carlo, A.; Zanoni, E.;

Analysis of DC current accelerated life tests of GaN LEDs using a Weibull-based statistical model

2005 / IEEE
By: Zanoni, E.; Meneghesso, G.; Meneghini, M.; Levada, S.;

Analysis of a High-Power-Factor Electronic Ballast for High Brightness Light Emitting Diodes

2005 / IEEE / 0-7803-9033-4
By: Meneghesso, G.; Buso, S.; Spiazzi, G.;

Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot-electron stress

2005 / IEEE / 0-7803-9268-X
By: Dua, C.; Morvan, E.; De Jaeger, J.-C.; Grimbert, B.; Labat, N.; Malbert, N.; Curutchet, A.; Zanoni, E.; Sozza, A.; Meneghesso, G.; Danesin, F.; Tazzoli, A.; Rampazzo, F.; Delage, S.; diForte-Poisson, M.A.;

Failure mechanisms of gallium nitride LEDs related with passivation

2005 / IEEE / 0-7803-9268-X
By: Meneghini, M.; Straus, U.; Harle, V.; Zehnder, U.; Zahner, T.; Zanoni, E.; Tamiazzo, G.; Meneghesso, G.; Levada, S.; Trevisanello, L.R.;

Electrostatic discharge effects in ultrathin gate oxide MOSFETs

2006 / IEEE
By: Meneghesso, G.; Tazzoli, A.; Gerardin, S.; Cester, A.;

Reliability of RF-MEMS

2005 / IEEE / 88-902012-0-7
By: Zanoni, E.; Meneghesso, G.; Tazzoli, A.; Gnudi, A.; Gaddi, R.;

Development of ESD protection structures for BULK and SOI BCD6 technology

2006 / IEEE / 0-7803-9714-2
By: Tazzoli, A.; Meneghesso, G.; Zanoni, E.; Andreini, A.; Dissegna, M.; Cerati, L.;

A discussion of the susceptibility of a brokaw bandgap to EMI

2006 / IEEE / 1-4244-0293-X
By: Buso, S.; Orietti, E.; Montemezzo, N.; Spiazzi, G.; Neviani, A.; Meneghesso, G.;

Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs

2006 / IEEE
By: Kordos, P.; Rampazzo, F.; Meneghesso, G.; Zanoni, E.; Verzellesi, G.;

High-Temperature Degradation of GaN LEDs Related to Passivation

2006 / IEEE
By: Meneghini, M.; Zanoni, E.; Meneghesso, G.; Strauss, U.; Zahner, T.; Zehnder, U.; Trevisanello, L.R.;

Reliability Issues in RF-MEMS Switches Submitted to Cycling and ESD Test

2006 / IEEE / 0-7803-9498-4
By: Zanoni, E.; Gnudi, A.; Gaddi, R.; Peretti, V.; Tazzoli, A.; Meneghesso, G.;

High Brightness Ingan Leds Degradation at High Injection Current Bias

2006 / IEEE / 0-7803-9498-4
By: Levada, S.; Meneghesso, G.; Spiazzi, G.; Buso, S.; Zanoni, E.; Meneghini, M.;

Physical Investigation of High-Field Degradation Mechanisms in GaN/AlGaN/GaN HEMTS

2006 / IEEE / 0-7908-0113-2
By: Meneghesso, G.; Rampazzo, F.; Fantini, F.; Verzellesi, G.; Zanoni, E.; Faqir, M.; Kordos, P.; Chini, A.; Bernat, J.;

Reversible Degradation of GaN LEDs Related to Passivation

2007 / IEEE / 1-4244-0918-7
By: Zehnder, U.; Benedetti, M.; Penzo, R.; Trevisanello, L.-R.; Strauss, U.; Meneghini, M.; Zanoni, E.; Meneghesso, G.;

Electrostatic Discharge and Cycling Effects on Ohmic and Capacitive RF-MEMS Switches

2007 / IEEE
By: Peretti, V.; Tazzoli, A.; Meneghesso, G.;

Reversible Degradation of Ohmic Contacts on p-GaN for Application in High-Brightness LEDs

2007 / IEEE
By: Trevisanello, L.-R.; Meneghini, M.; Zanoni, E.; Meneghesso, G.; Zehnder, U.;

Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs With Ultra-Thin Gate Oxide

2007 / IEEE
By: Tazzoli, A.; Griffoni, A.; Gerardin, S.; Paccagnella, A.; Meneghesso, G.; Cester, A.;

A review of failure modes and mechanisms of GaN-based HEMTs

2007 / IEEE / 978-1-4244-1507-6
By: Meneghesso, G.; Zanoni, E.; Zanon, F.; Tazzoli, A.; Verzellesi, G.; Rampazzo, F.; Meneghini, M.; Danesin, F.;

Characterisation of AlGaN/GaN HEMT epitaxy and devices on composite substrates

2007 / IEEE / 978-1-4244-1507-6
By: Ongaro, C.; Meneghesso, G.; Thorpe, J.; Bove, P.; Lahreche, H.; Zanoni, E.; Langer, R.; de Jaeger, J.C.; Hoel, V.; di Forte-Poisson, M.A.; Brylinski, C.;

Alternative MOS devices for the manufacture of high-density ICs

2007 / IEEE / 978-1-4244-1891-6
By: Meneghesso, G.; Marino, F.A.;

Performance Degradation of High-Brightness Light Emitting Diodes Under DC and Pulsed Bias

2008 / IEEE
By: Meneghesso, G.; Meneghini, M.; Spiazzi, G.; Buso, S.;

Reliability of Deep-UV Light-Emitting Diodes

2008 / IEEE
By: Meneghini, M.; Meneghesso, G.; Zanoni, E.; Gaska, R.; Trivellin, N.; Pavesi, M.;

Accelerated Life Test of High Brightness Light Emitting Diodes

2008 / IEEE
By: Zanoni, E.; Meneghesso, G.; Pavesi, M.; Vanzi, M.; Mura, G.; Meneghini, M.; Trevisanello, L.;

Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

2008 / IEEE
By: Rampazzo, F.; Danesin, F.; Verzellesi, G.; Meneghesso, G.; Zanon, F.; Zanoni, E.; Meneghini, M.; Tazzoli, A.;

Extensive Analysis of the Degradation of Blu-Ray Laser Diodes

2008 / IEEE
By: Ueda, D.; Yuri, M.; Orita, K.; Zanoni, E.; Trivellin, N.; Meneghesso, G.; Meneghini, M.;

A Review on the Reliability of GaN-Based LEDs

2008 / IEEE
By: Meneghini, M.; Zanoni, E.; Meneghesso, G.; Trevisanello, L.-R.;

Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs

2008 / IEEE
By: Verzellesi, G.; Faqir, M.; Fantini, F.; Zanoni, E.; Meneghesso, G.;

Electro-thermally activated degradation of blu-ray gan-based laser diodes

2008 / IEEE / 978-1-4244-2049-0
By: Zanoni, E.; Yuri, M.; Orita, K.; Trevisanello, L.; Trivellin, N.; Meneghesso, G.; Meneghini, M.;

Suspensions shape impact on the reliability of ohmic RF-MEMS redundancy switches

2008 / IEEE / 978-1-4244-2049-0
By: Meneghesso, G.; Autizi, E.; Peretti, V.; Tazzoli, A.;

Reducing the EMI Susceptibility of a Kuijk Bandgap

2008 / IEEE
By: Orietti, E.; Spiazzi, G.; Neviani, A.; Meneghesso, G.; Buso, S.; Montemezzo, N.;

Microdose and Breakdown Effects Induced by Heavy Ions on Sub 32-nm Triple-Gate SOI FETs

2008 / IEEE
By: Paccagnella, A.; Meneghesso, G.; Gerardin, S.; Griffoni, A.; Claeys, C.; Put, S.; Simoen, E.;

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