Your Search Results

Use materials by this author in your textbook!

AcademicPub holds over eight million pieces of educational content – such as case studies and journal articles – for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Author: Mantl, S.

Results

Noise spectroscopy of traps in silicon nanowire field-effect transistors
2011 / IEEE / 978-1-4577-0192-4
By: Li, J.; Pud, S.; Vitusevich, S.; Mantl, S.; Offenhausser, A.; Feste, S.; Petrychuk, M.;
Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source
2011 / IEEE / 978-1-4577-0708-7
By: Hartmann, J.-M.; Buca, D.; Richter, S.; Zhang, B.; Schmidt, M.; Luptak, R.; Yu, W.J.; Zhao, Q.T.; Mantl, S.; Bourdelle, K.K.; Fox, A.;
Nanowire and planar UTB SOI Schottky Barrier MOSFETs with dopant segregation
2012 / IEEE / 978-1-4673-0192-3
By: Schafer, A.; Knoll, L.; Mantl, S.; Zhao, Q.T.; Bourdelle, K.K.; Trellenkamp, S.;
Si/SiGe hetero-structure tunneling field effect transistors with in-situ doped SiGe source
2012 / IEEE / 978-1-4673-0192-3
By: Knoll, L.; Schmidt, M.; Mantl, S.; Zhao, Q.T.; Hartmann, J.; Schafer, A.; Richter, S.;
Strained silicon nanowire array MOSFETs with high-k/metal gate stack
2012 / IEEE / 978-1-4673-0192-3
By: Trellenkamp, S.; Richter, S.; Mantl, S.; Zhao, Q.T.; Bourdelle, K.K.; Schafer, A.; Schmidt, M.;
Epitaxial growth and properties of NiSiGe
2012 / IEEE / 978-1-4673-1257-8
By: Hollander, B.; Buca, D.; Mussler, G.; Qingtai Zhao; Mantl, S.; Bo Zhang; Wenjie Yu; Miao Zhang;
Planar and nanowire Schottky barrier MOSFETs on SOI with NiSi and epitaxial NiSi2 contacts
2012 / IEEE / 978-1-4673-1257-8
By: Zhao, Q.T.; Mantl, S.; Bourdelle, K.K.; Trellenkamp, S.; Schafer, A.; Knoll, L.;
$\Omega$-Gated Silicon and Strained Silicon Nanowire Array Tunneling FETs
2012 / IEEE
By: Richter, S.; Sandow, C.; Nichau, A.; Trellenkamp, S.; Mantl, S.; Luptak, R.; Bourdelle, K.K.; Zhao, Q.T.; Schmidt, M.;
An Improved Si Tunnel Field Effect Transistor With a Buried Strained $\hbox{Si}_{1-x}\hbox{Ge}_{x}$ Source
2011 / IEEE
By: Zhao, Q.T.; Mantl, S.; Hartmann, J.M.;
Hole Mobilities of $\hbox{Si/Si}_{0.5}\hbox{Ge}_{0.5}$ Quantum-Well Transistor on SOI and Strained SOI
2012 / IEEE
By: Buca, D.; Zhao, Q.T.; Zhang, B.; Yu, W.; Mantl, S.; Hartmann, J.-M.; Bourdelle, K.K.; Wang, X.; Fox, A.; Mussler, G.; Luptak, R.;
Hole Transport in Strained $\hbox{Si}_{0.5} \hbox{Ge}_{0.5}$ QW-MOSFETs With $\langle\hbox{110}\rangle$ and
2012 / IEEE
By: Schmidt, M.; Minamisawa, R.A.; Mantl, S.; Bourdelle, K.K.; Knoll, L.; Hartmann, J.M.; Zhao, Q.T.; Buca, D.;
GeSn for nanoelectronic and optical applications
2015 / IEEE
By: Buca, D.; Wirths, S.; Hartmann, J-M.; Ikonic, Z.; Mantl, S.; Grutzmacher, D.; Stoica, T.; von den Driesch, Nils; Stange, D.;
Strained Si nanowire GAA n-TFETs for low supply voltages
2015 / IEEE
By: Bourdelle, K. K.; Mantl, S.; Zhao, Q. T.; Trellenkamp, S.; Luong, G. V.;
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells
2015 / IEEE
By: Selmi, L.; Esseni, D.; Palestri, P.; Strangio, S.; Mantl, S.; Zhao, Q.; Richter, S.; Crupi, F.;
Tunnel-FET inverters for ultra-low power logic with supply voltage down to VDD = 0.2 V
2014 / IEEE
By: Mantl, S.; Zhao, Q. T.; Bourdelle, K. K.; Hartmann, J. M.; Schafer, A.; Trellenkamp, S.; Richter, S.;
High on-currents with highly strained Si nanowire MOSFETs
2014 / IEEE
By: Luong, G. V.; Knoll, L.; Mantl, S.; Zhao, Q. T.; Buca, D.; Bourdelle, K. K.; Suess, M. J.; Sigg, H.; Schafer, A.; Trellenkamp, S.;
Line and Point Tunneling in Scaled Si/SiGe Heterostructure TFETs
2014 / IEEE
By: Hartmann, J.; Trellenkamp, S.; Buca, D.; Minamisawa, R.A.; Schafer, A.; Schmidt, M.; Mantl, S.; Zhao, Q.;
Si-Ge-Sn heterostructures: Growth and applications
2014 / IEEE
By: Buca, D.; Wirths, S.; Stange, D.; Tiedemann, A.T.; Mussler, G.; Ikonic, Z.; Chiussi, S.; Mantl, S.; Grutzmacher, D.; Hartmann, J.M.;
Growth and interface engineering of highly strained low bandgap group IV semiconductors
2014 / IEEE
By: Wirths, S.; Pampillon, M.A.; Buca, D.; Mantl, S.; Hartmann, J-M.; San Andres, E.; Stange, D.; Tiedemann, A. T.; Mussler, G.; Fox, A.; Breuer, U.;
Patterning of silicide layers by local oxidation
1997 / IEEE
By: Dolle, M.; Klinkhammer, F.; Mantl, S.;
Patterning of silicide layers by local oxidation
1998 / IEEE
By: Mantl, S.; Dolle, M.; Klinkhammer, F.;
High performance Si/Si/sub 1-x/Gex resonant tunneling diodes
2001 / IEEE
By: Mantl, S.; Hollander, B.; Paul, D.J.; See, P.; Berggren, K.-F.; Zozoulenko, I.V.;
Substrate engineering by hydrogen or helium implantation for epitaxial growth of lattice mismatched Si/sub 1-x/Ge/sub x/ films on silicon
2000 / IEEE / 0-7803-6462-7
By: Lenk, St.; Hollander, B.; Fichtner, P.F.P.; Hackbarth, T.; Herzog, H.-J.; Luysberg, M.; Kirch, D.; Trinkaus, H.; Mantl, S.;
Self-assembled epitaxial CoSi/sub 2//Si[100] nanostructures
2001 / IEEE / 0-7803-6520-8
By: Lenk, S.; Winnerl, S.; Zhao, Q.-T.; Kluth, P.; Mantl, S.;
Si/SiGe n-MODFETs on thin SiGe virtual substrates prepared by means of He implantation
2002 / IEEE
By: Konig, U.; Seiler, U.; Hackbarth, T.; Herzog, H.-J.; Mantl, S.; Hollander, B.; Luysberg, M.;
Vertical p-channel double-gate MOSFETs
2003 / IEEE / 0-7803-7999-3
By: Goryll, M.; Hart, Avd.; Trellenkamp, S.; Moers, J.; Luth, H.; Kordos, P.; Mantl, S.;
Diffusion and defect formation in ion implanted Si nanostructures
2002 / IEEE / 0-7803-7155-0
By: Hogg, S.M.; Mantl, S.; Moers, J.; Trellenkamp, S.; Zhang, M.; Lenk, S.; Kluth, P.;
Strained silicon FETs on thin SiGe virtual substrates produced by He implantation: reduced self-heating on DC and RF performance
2003 / IEEE / 0-7803-8139-4
By: Konig, U.; Hieber, K.-H.; Herzog, H.-J.; Hackbarth, T.; Mantl, S.; von Kanel, H.; St Lenk; Hollander, B.;
Self-heating effects on strained Si/SiGe n-HFETs
2003 / IEEE / 0-7803-8139-4
By: Mantl, S.; Hollander, B.; Konig, U.; Herzog, H.; Hackbarth, T.; Giguerre, L.; Aniel, F.; Encisco, M.;
An extended model for carbon nanotube field-effect transistors
2004 / IEEE / 0-7803-8284-6
By: Mantl, S.; Knoch, J.; Appenzeller, J.; Avouris, P.; Chen, Z.; Lin, Y.-M.;
Tuning of silicide Schottky barrier heights by segregation of sulfur atoms
2004 / IEEE / 0-7803-8511-X
By: Lenk, S.; Breuer, U.; Rije, E.; Zhao, Q.T.; Mantl, S.;
Vertical double-gate MOSFETs
2004 / IEEE / 0-7803-8335-7
By: Trellenkamp, St.; Moers, J.; Kordos, P.; Luth, H.; Mantl, S.; Hart, A.v.d.; Marso, M.;
Schottky barrier height modulation using dopant segregation in Schottky-barrier SOI-MOSFETs
2005 / IEEE / 0-7803-9203-5
By: Lenk, St.; Zhao, Q.T.; Knoch, J.; Zhang, M.; Mantl, S.; Breuer, U.;
On the performance of single-gated ultrathin-body SOI Schottky-barrier MOSFETs
2006 / IEEE
By: Mantl, S.; Min Zhang; Knoch, J.; Appenzeller, J.;
Tuning of Schottky barrier heights by silicidation induced impurity segregation
2006 / IEEE / 1-4244-0047-3
By: Knoch, J.; Zhang, M.; Zhao, Q.T.; Mantl, S.;
Study of Relaxation of Strain in Patterned Structures using X-Ray Diffraction Technique
2006 / IEEE / 1-4244-0461-4
By: Loo, R.; Mantl, S.; Trinkaus, H.; Hollander, B.; Caymax, M.; Bauer, G.; Stangl, J.; Khan, A.R.; Buca, D.;
Theory of X-ray Diffraction from Partially Relaxed SiGe/Si Layers
2006 / IEEE / 1-4244-0461-4
By: Buca, D.; Trinkaus, H.; Bauer, G.; Khan, A.R.; Mantl, S.; Hollander, B.;
Fabrication and Characterization of Patterned Si/SiGe Lines with Asymmetric Biaxial Stress
2006 / IEEE / 1-4244-0461-4
By: Caymax, M.; Loo, R.; Mantl, S.; Trinkaus, H.; Feste, S.; Hollander, B.; Buca, D.;
Improved Carrier Injection in Ultrathin-Body SOI Schottky-Barrier MOSFETs
2007 / IEEE
By: Mantl, S.; Appenzeller, J.; Knoch, J.; Zhang, M.;
Measurement of the Germanium fraction in strained and relaxed SiGe by Spectroscopic Ellipsometry
2006 / IEEE / 1-4244-0369-0
By: Caymax, M.; Loo, R.; Goryll, M.; Buca, D.M.; Moers, J.; Mantl, S.;
Large current enhancement in n-MOSFETs with strained Si on insulator
2007 / IEEE / 978-1-4244-1891-6
By: Loo, R.; Horstmann, M.; Wei, A.; Buchholtz, W.; Gosele, U.; Reiche, M.; Nguyen, D.; Luysberg, M.; Feste, S.; Hollander, B.; Zhao, Q.T.; Buca, D.; Mantl, S.;
Fabrication, characterization and modeling of strained SOI MOSFETs with very large effective mobility
2007 / IEEE / 978-1-4244-1123-8
By: Driussi, F.; Esseni, D.; Selmi, L.; Buca, D.; Mantl, S.; Luysberg, M.; Nguyen, D.; Reiche, M.; Schmidt, M.; Lemme, M.C.; Kurz, H.; Loo, R.;
Threshold Voltage Variation in SOI Schottky-Barrier MOSFETs
2008 / IEEE
By: Shi-Li Zhang; Knoch, J.; Min Zhang; Mantl, S.; Schroter, M.; Feste, S.;
Variability in SOI Schottky barrier MOSFETs
2008 / IEEE / 978-1-4244-1729-2
By: Zhang, M.; Feste, S.F.; Mantl, S.; Zhang, S.-L.; Knoch, J.;
Schottky barrier height modulation by Arsenic Dopant segregation
2008 / IEEE / 978-1-4244-1729-2
By: Zhao, Q.-T.; Sandow, C.; Muller, M.; Breuer, U.; Mantl, S.; Urban, C.;
Nickel silicidation on sulfur implanted Si(100)
2008 / IEEE / 978-1-4244-1737-7
By: Mantl, S.; Lenk, S.; Breuer, U.; Jia, C.L.; Mi, S.; Zhao, Q.T.;
Schottky-barrier height tuning of Ni and Pt germanide/n-Ge contacts using dopant segregation
2008 / IEEE / 978-1-4244-2185-5
By: Breuer, U.; Sandow, C.; Urban, C.; Zhao, Q.T.; Mueller, M.; Mantl, S.;
Improving the performance of band-to-band tunneling transistors by tuning the gate oxide and the dopant concentration
2008 / IEEE / 978-1-4244-1942-5
By: Urban, C.; Knoch, J.; Sandow, C.; Mantl, S.;
High performance Schottky barrier MOSFETs on UTB SOI
2009 / IEEE / 978-1-4244-3704-7
By: Mantl, S.; Zhao, Q.-T.; Sandow, C.; Urban, C.;
Rare-earth based alternative gate dielectrics for future integration in MOSFETs
2009 / IEEE / 978-1-4244-3704-7
By: Schubert, J.; Roeckerath, M.; Durgun-Ozben, E.; Lopes, J.M.J.; Mantl, S.; Littmark, U.; Breuer, U.; Besmehn, A.; Lenk, S.; Luptak, R.;
Performance enhancement of uniaxially-tensile strained Si NW-nFETs fabricated by lateral strain relaxation of SSOI
2009 / IEEE / 978-1-4244-3704-7
By: Zhao, Q.T.; Buca, D.; Habicht, S.; Knoch, J.; Feste, S.F.; Mantl, S.;
High-frequency performance of dopant-segregated NiSi S/D SOI SB-MOSFETs
2009 / IEEE / 978-1-4244-4351-2
By: Emam, M.; Urban, C.; Mantl, S.; Raskin, J.-P.; Fox, A.; Zhao, Q.-T.; Sandow, C.;
Advances in Si & Ge millisecond processing: From silicon-on-insulator to superconducting Ge
2009 / IEEE / 978-1-4244-3814-3
By: Skorupa, W.; Heera, V.; Herrmannsdorfer, T.; Posselt, M.; Gebel, T.; Minamisawa, R.A.; Mantl, S.; Anwand, W.; Buca, D.;
Mobility measurements in Gd silicate/TiN SOI and sSOI n-MOSFETs
2009 / IEEE / 978-1-4244-6030-4
By: Schmidt, M.; Kurz, H.; Mantl, S.; Buca, D.; Gottlob, H.D.B.;
Ultrathin Ni Silicides With Low Contact Resistance on Strained and Unstrained Silicon
2010 / IEEE
By: Habicht, S.; Zhao, Q.T.; Knoll, L.; Mantl, S.; Ghyselen, B.; Urban, C.;
A New Method for Silicide Patterning based on Local Oxidation
1995 / IEEE / 286332182X
By: Bay, H.L.; Mantl, S.; Dolle, M.;
Radio-Frequency Study of Dopant-Segregated n-Type SB-MOSFETs on Thin-Body SOI
2010 / IEEE
By: Mantl, S.; Raskin, J.-P.; Qing-Tai Zhao; Knoch, J.; Sandow, C.; Emam, M.; Urban, C.;
Hole mobilities and electrical characteristics of �- gated silicon nanowire array FETs with )110* - and )100* - channel orientation
2010 / IEEE / 978-1-4244-6661-0
By: Zhao, Q.T.; Feste, S.F.; Habicht, S.; Mantl, S.;
Non-linear analysis of n-type Schottky-Barrier MOSFETs
2010 / IEEE / 978-1-4244-9129-2
By: Tinoco, J.C.; Raskin, J.-P.; Zhao, Q.T.; Mantl, S.; Emam, M.; Urban, C.;
Lanthanum Lutetium oxide integration in a gate-first process on SOI MOSFETs
2011 / IEEE / 978-1-4577-0091-0
By: Besmehn, A.; Luysberg, M.; Lopes, J.M.J.; Schnee, M.; Ozben, E.D.; Nichau, A.; Mantl, S.; Schubert, J.; Zhao, Q.T.; Buca, D.; Castro, G.R.; Rubio-Zuazo, J.; Lenk, S.; Luptak, R.; Mussmann, V.; Habicht, S.; Knoll, L.;
20nm Gate length Schottky MOSFETs with ultra thin NiSi/epitaxial NiSi2 source/drain
2011 / IEEE / 978-1-4577-0091-0
By: Knoll, L.; Mantl, S.; Bourdelle, K.K.; Trellenkamp, S.; Luptak, R.; Zhao, Q.T.;
Silicon Nanowire Tunneling Field-Effect Transistor Arrays: Improving Subthreshold Performance Using Excimer Laser Annealing
2011 / IEEE
By: Mantl, S.; Minamisawa, R.A.; Das, S.; Sandow, C.; Smith, J.T.; Appenzeller, J.;
Thermal stability and interface improvement of thin NiSiGe by C+ ion implantation
2011 / IEEE / 978-1-4577-0502-1
By: Zhang, M.; Hartmann, J.-M.; Hollander, B.; Buca, D.; Wang, X.; Yu, W.; Zhang, B.; Zhao, Q.T.; Mantl, S.;

Return To Top