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Author: Manfra, M.J.

Results

New MBE buffer used to eliminate backgating in GaAs MESFETs
1988 / IEEE
By: Chen, C.-L.; Calawa, A.R.; Smith, F.W.; Mahoney, L.J.; Manfra, M.J.;
p/sup +/-AlInAs/InP junction FETs by selective molecular beam epitaxy
1988 / IEEE
By: Bailey, R.J.; Manfra, M.J.; Donnelly, J.P.; Woodhouse, J.D.;
Sidegating reduction for GaAs integrated circuits by using a new buffer layer
1988 / IEEE
By: Finn, M.C.; Turner, G.W.; Chen, C.L.; Smith, F.W.; Calawa, A.R.; Manfra, M.J.; Mahoney, L.J.;
Reduction of sidegating in GaAs analog and digital circuits using a new buffer layer
1989 / IEEE
By: Calawa, A.R.; Smith, F.W.; Chen, C.-L.; Manfra, M.J.; Mahoney, L.J.;
High-power-density GaAs MISFETs with a low-temperature-grown epitaxial layer as the insulator
1991 / IEEE
By: Chen, C.-L.; Calawa, A.R.; Manfra, M.J.; Mahoney, L.J.; Clifton, B.J.; Smith, F.W.;
Effects of interface traps on the transconductance and drain current of InP MISFET's
1992 / IEEE
By: Palmateer, S.C.; Mahoney, L.J.; Courtney, W.E.; Calawa, A.R.; Chen, C.-L.; Hollis, M.A.; Manfra, M.J.;
High-breakdown-voltage MESFET with a low-temperature-grown GaAs passivation layer and overlapping gate structure
1992 / IEEE
By: Calawa, A.R.; Temme, D.H.; Smith, F.W.; Manfra, M.J.; Mahoney, L.J.; Chen, C.-L.;
A 1.57 W/mm GaAs-based MISFET for high-power and microwave-switching applications
1991 / IEEE / 0-87942-591-1
By: Clifton, B.J.; Temme, D.H.; Manfra, M.J.; Mahoney, L.J.; Chen, C.L.; Smith, F.W.; Calawa, A.R.;
Low shot noise in high-speed resonant-tunneling diodes
1991 / IEEE
By: Manfra, M.J.; Calawa, A.R.; Parker, C.D.; Brown, E.R.;
A quasioptical resonant-tunneling-diode oscillator operating above 200 GHz
1993 / IEEE
By: Calawa, A.R.; Parker, C.D.; Brown, E.R.; Molvar, K.M.; Manfra, M.J.;
Self-aligned GaAs MISFET's with a low-temperature-grown GaAs gate insulator
1995 / IEEE
By: Gramstorff, B.F.; Mahoney, L.J.; Manfra, M.J.; Nichols, K.B.; Molvar, K.M.; Chen, C.L.; Brown, E.R.; Murphy, R.A.;
GaInAsSb-AlGaAsSb tapered lasers emitting at 2.05 �m with 0.6-W diffraction-limited power
1998 / IEEE
By: Conners, M.K.; Turner, G.W.; Walpole, J.N.; Choi, H.K.; Manfra, M.J.; Missaggia, L.J.;
New MBE Buffer For Micron And Quarter-Micron Gate GaAs MESFET's
1987 / IEEE
By: Calawa, A.R.; Smith, F.W.; Spooner, F.H.; Huang, J.C.; Manfra, M.J.; Mahoney, L.J.; Chen, C.L.;
High-power high-brightness GaInAsSb-AlGaAsSb tapered laser arrays with anamorphic collimating lenses emitting at 2.05 /spl mu/m
1999 / IEEE
By: Connors, M.K.; Liau, Z.L.; Missaggia, L.G.; Choi, H.K.; Turner, G.W.; Walpole, J.N.; Cook, C.C.; Manfra, M.J.;
Optical heterodyne detection and microwave rectification up to 26 GHz using quantum well infrared photodetectors
1995 / IEEE
By: Nichols, K.B.; McIntosh, K.A.; Brown, E.R.; Jenkins, G.E.; Liu, H.C.; Manfra, M.J.;
Mid-IR angled-grating distributed feedback (/spl alpha/-DFB) "W" lasers
2000 / IEEE / 0-7803-5947-X
By: Bewley, W.W.; Bartolo, R.E.; Turner, G.W.; Manfra, M.J.; Martinelli, R.U.; Vurgaftman, I.; Lee, H.; Yang, M.-J.; Meyer, J.R.; Jurkovic, M.J.; Felix, C.L.;
High-efficiency optically-pumped mid-IR lasers with integrated absorbers
2000 / IEEE / 0-7803-5947-X
By: Choi, H.K.; Turner, G.W.; Goyal, A.K.; Sanchez, A.; Fan, T.Y.; Manfra, M.J.; Foti, P.J.;
High-power optically pumped GaInSb/InAs quantum well lasers with GaInAsSb integrated absorber layers emitting at 4 /spl mu/m
2000 / IEEE / 1-55752-634-6
By: Turner, G.W.; Buchter, S.C.; Goyal, A.K.; Choi, H.K.; Calawa, S.D.; Manfra, M.J.;
Beam quality issues for mid-infrared angled-grating distributed feedback lasers
2001 / IEEE / 1-55752-662-1
By: Felix, C.L.; Bewley, W.W.; Jurkovic, M.J.; Bartolo, R.E.; Vurgaftman, I.; Meyer, J.R.; Manfra, M.J.; Turner, G.W.; Martinelli, R.U.; Lee, H.;
Limitations to beam quality of mid-infrared angled-grating distributed-feedback lasers
2001 / IEEE
By: Bewley, W.W.; Manfra, M.J.; Turner, G.W.; Martinelli, R.U.; Lee, H.; Vurgaftman, I.; Meyer, J.R.; Felix, C.L.; Jurkovic, M.J.; Bartolo, R.E.;
Wavelength beam combining of mid-IR semiconductor lasers
2001 / IEEE / 0-7803-7105-4
By: Foti, P.J.; Manfra, M.J.; Liau, Z.L.; Fan, T.Y.; Turner, G.W.; Missaggia, L.; Goyal, A.K.; Sanchez, A.; Daneu, J.L.; O'Brien, P.;
High-performance, aluminum-free optically-pumped mid-IR semiconductor lasers
2001 / IEEE / 0-7803-7105-4
By: Turner, G.W.; Goyal, A.K.; Sanchez, A.; O'Brien, P.; Foti, P.J.; Manfra, M.J.;
Advances in mid-IR antimonide type-II W lasers
2001 / IEEE / 0-7803-7432-0
By: Martinelli, R.U.; Leet, H.; Manfra, M.J.; Turner, G.W.; Meyer, J.R.; Felix, C.L.; Canedy, C.L.; Lindle, J.R.; Bartolo, R.E.; Vurgaftman, I.; Bewley, W.W.;
Coherent terahertz radiation from LTG-GaAs photomixers
1994 / IEEE
By: Manfra, M.J.; Nichols, K.S.; Brown, E.R.; McIntosh, K.A.; Dennis, C.L.;
High frequency quantum well infrared photodetector
1994 / IEEE
By: Brown, E.R.; Jenskins, G.E.; Liu, H.C.; Manfra, M.J.; Nichols, K.B.; McIntosh, K.A.;
AlGaN/GaN HEMTs grown by MBE on semi-insulating HVPE GaN templates
2002 / IEEE / 0-7803-7317-0
By: Manfra, M.J.; Weimann, N.G.; Molnar, R.J.; Lang, D.V.; West, K.W.; Pfeiffer, L.N.; Hsu, J.W.P.;
Comparison of high mobility AlGaN/GaN heterostructures grown by MBE on HVPE GaN templates and directly nucleated on sapphire
2002 / IEEE / 0-7803-7581-5
By: Pfeiffer, L.N.; Hsu, J.W.P.; Weimann, N.G.; Manfra, M.J.; Molnar, R.J.; West, K.W.;
Dual Function Mixer Circuit for Millimeter Wave Transceiver Applications
1985 / IEEE
By: Manfra, M.J.; Mahoney, L.J.; Courtney, W.E.; Chu, A.; Calawa, A.R.;
Dual Function Mixer Circuit for Millimeter Wave Transceiver Applications
1985 / IEEE
By: Manfra, M.J.; Mahoney, L.J.; Courtney, W.E.; Chu, A.; Calawa, A.R.;
A Low-Loss Ku-Band Monolithic Analog Phase Shifter
1987 / IEEE
By: Manfra, M.J.; Mahoney, L.J.; Courtney, W.E.; Chang-Lee Chen; Atwater, H.A.; Chu, A.;
AlGaN/GaN HEMTs grown by molecular beam epitaxy on sapphire, SiC, and HVPE GaN templates
2002 / IEEE / 0-7803-7478-9
By: Weimann, N.G.; Molnar, R.J.; Lang, D.V.; Chu, S.N.G.; Hsu, J.W.P.; West, K.W.; Pfeiffer, L.N.; Baldwin, K.; Manfra, M.J.;
Submicron AlGaN/GaN HEMTs with very high drain current density grown by plasma-assisted MBE on 6H-SiC
2002 / IEEE
By: Chakraborty, S.; Manfra, M.J.; Weimann, N.G.; Tennant, D.M.;
Unpassivated AlGaN-GaN HEMTs with minimal RF dispersion grown by plasma-assisted MBE on semi-insulating 6H-SiC substrates
2003 / IEEE
By: Wachtler, T.; Manfra, M.J.; Weimann, N.G.;
High power AlGaN/GaN HEMTs grown by plasma-assisted MBE operating at 2 to 25 GHz
2003 / IEEE / 0-7803-7727-3
By: Manfra, M.J.; Waechtler, T.; Weimann, N.G.;
Arrays of III-V semiconductor Geiger-mode avalanche photodiodes
2003 / IEEE / 0-7803-7888-1
By: Mahoney, L.J.; Calawa, S.D.; Napoleone, A.; Oakley, D.C.; Donnelly, J.P.; Mclntosh, K.A.; Molvar, K.M.; Manfra, M.J.; Turner, G.W.; Aull, B.F.; Duerr, E.K.; Molnar, R.J.; Mahan, J.;
High power GaN/AlGaN/GaN HEMTs operating at 2 to 25 GHz grown by plasma-assisted molecular beam epitaxy
2003 / IEEE / 0-7803-8139-4
By: Manfra, M.J.;
High-power 2.1-/spl mu/m GaSb-based laser diode arrays
2004 / IEEE / 1-55752-777-6
By: Bailey, R.J.; Manfra, M.J.; Huang, R.K.; Turner, G.W.; Plant, J.J.; Bailey, L.J.;
Low-resistance ohmic contacts to p-type GaAs using Zn/Pd/Au metallization
1985 / IEEE
By: Mahoney, L.J.; Chu, A.; Chen, C.L.; Brooks, R.C.; Finn, M.C.; Manfra, M.J.; Mavroides, J.G.;
VA-2 New MBE buffer used to eliminate backgating in GaAs MESFET's
1987 / IEEE
By: Smith, F.W.; Calawa, A.R.; Chen, C.L.; Manfra, M.J.; Mahoney, L.J.;
Efficient infrared-to-electrical conversion with semiconductor heterojunction thermophotovoltaic devices
2006 / IEEE / 978-1-55752-813-1
By: Ram, R.J.; Huang, R.K.; Turner, G.W.; Missaggia, L.J.; Connors, M.K.; Manfra, M.J.;
Polaritons in high-quality AlGaN based microcavities
2006 / IEEE / 978-1-55752-813-1
By: Manfra, M.J.; Schmult, S.; Mitrofanov, O.; Molnar, R.J.; Sergent, A.M.;
Geiger-mode operation of antimonide-based avalanche photodiodes in the mid-wave infrared
2008 / IEEE / 978-1-4244-1931-9
By: Bailey, R.J.; Manfra, M.J.; Duerr, E.K.; Turner, G.W.; Donnelly, J.P.; Diagne, M.A.;
Intersubband Transitions in Lattice-Matched AlInN/GaN Heterostructures
2010 / IEEE / 978-1-4244-4731-2
By: Edmunds, C.; Malis, O.; Manfra, M.J.; Donghui Li;

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