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Author: Leland Chang

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Sub 50-nm FinFET: PMOS

1999 / IEEE / 0-7803-5410-9
By: Chenming Hu; Xuejue Huang; Tsu-Jae King; Subramanian, V.; Asano, K.; Yang-Kyu Choi; Bokor, J.; Takeuchi, H.; Anderson, E.; Kedzierski, J.; Leland Chang; Hisamoto, D.; Charles Kuo; Wen-Chin Lee;

Sub-50 nm P-channel FinFET

2001 / IEEE
By: Kedzierski, J.; Anderson, E.; Leland Chang; Hisamoto, D.; Kuo, C.; Wen-Chin Lee; Xuejue Huang; Chenming Hu; Bokor, J.; Tsu-Jae King; Subramanian, V.; Asano, K.; Yang-Kyu Choi; Takeuchi, H.;

Nanoscale CMOS at low temperature: design, reliability, and scaling trend

2001 / IEEE / 0-7803-6412-0
By: Qi Xiang; Hyeon-Seag Kim; Riccobene, C.; Haihong Wang; Ming-Ren Lin; Chenming Hu; Bin Yu; Leland Chang;

Quasi-planar NMOS FinFETs with sub-100 nm gate lengths

2001 / IEEE / 0-7803-7014-7
By: Anderson, E.; Leland Chang; Yang-Kyu Choi; Lindert, N.; Wenchin Lee; Chenming Hu; Bokor, J.; Tsu-Jae King;

Moore's law lives on [CMOS transistors]

2003 / IEEE
By: Chenming Hu; Bokor, J.; Lindert, N.; Peiqi Xuan; Tsu-Jae King; Kedzierski, J.; Yang-Kyu Choi; Leland Chang;

FinFET scaling to 10 nm gate length

2002 / IEEE / 0-7803-7462-2
By: Leland Chang; Ahmed, S.; Kyser, D.; Ming-Ren Lin; Chenming Hu; Bokor, J.; Tsu-Jae King; Bin Yu; Qi Xiang; Chau Ho; Tabery, C.; Chih-Yuh Yang; Bell, S.; Haihong Wang;

FinFET process refinements for improved mobility and gate work function engineering

2002 / IEEE / 0-7803-7462-2
By: Leland Chang; Yang-Kyu Choi; Bokor, J.; Tsu-Jae King; Ameen, M.; Agarwal, A.; Balasubramanian, S.; Daewon Ha; Jeong-Soo Lee; Ranade, P.;

Direct-tunneling gate leakage current in double-gate and ultrathin body MOSFETs

2002 / IEEE
By: Yee-Chia Yeo; Yang, K.J.; Leland Chang; Chenming Hu; Tsu-Jae King; Polishchuk, I.;

CMOS circuit performance enhancement by surface orientation optimization

2004 / IEEE
By: Meikei Ieong; Leland Chang; Min Yang;

On the scalability and carrier transport of advanced CMOS devices

2005 / IEEE / 0-7803-9081-4
By: Sufi Zafar; Min Yang; Huiling Shang; Doris, B.; Chan, V.; Leland Chang; Meikei Icong;

A 5.3GHz 8T-SRAM with Operation Down to 0.41V in 65nm CMOS

2007 / IEEE / 978-4-900784-04-8
By: Sawada, J.; Montoye, R.K.; Nakamura, Y.; Leland Chang; Jamsek, D.; Hosokawa, K.; Martin, A.K.; Haensch, W.; Acharyya, D.J.; Agarwal, K.B.; Gebara, F.H.; Kinoshita, K.;

A fully-integrated switched-capacitor 261 voltage converter with regulation capability and 90% efficiency at 2.3A/mm²

2010 / IEEE / 978-1-4244-5453-2
By: Montoye, R.K.; Leland Chang; Dennard, R.H.; Stawiasz, K.G.; Weger, A.J.; Ji, B.L.;

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