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Author: Laskar, J.

Results

A Non-Interruptive Link-Variation Monitoring Circuit for Wireless Sensor Applications
2011 / IEEE
By: Seong-Hyok Kim; Sungho Beck; Kwanyeob Chae; Jaehyouk Choi; Kim, S.T.; Bien, F.; Laskar, J.; Tentzeris, M.M.; Kyutae Lim; Chang-Ho Lee;
A Parallel-Segmented Monolithic Step-Up Transformer
2011 / IEEE
By: Ockgoo Lee; Laskar, J.; Chang-Ho Lee; Kyu Hwan An;
A multi-band WCDMA SAW-less receivers with frequency selective feedback loop
2011 / IEEE / 978-1-61284-857-0
By: Beck, S.; Laskar, J.; Tentzeris, M.M.; Kyutae Lim; Kim, S.T.;
CMOS, cognitive and mmW: A wireless revolution
2012 / IEEE / 978-1-4577-1155-8
By: Laskar, J.;
Microwave frequency operation of the heterostructure hot-electron diode
1988 / IEEE
By: Higman, T.K.; Laskar, J.; Kolodzey, J.; Hess, K.; Coleman, J.J.; Emanuel, M.A.;
Frequency response of AlInAs/GaInAs/InP modulation-doped field-effect transistors at cryogenic temperatures
1988 / IEEE
By: Laskar, J.; Adesida, I.; Kolodzev, J.; Sivco, D.; Boor, S.; Fischer, R.; Cho, A.Y.; Ketterson, A.; Reis, S.;
DC and RF characterization of short-gate-length InGaAs/InAlAs MODFETs
1989 / IEEE
By: Ketterson, A.A.; Hier, H.; Aina, O.A.; Kolodzey, J.; Adesida, I.; Brock, T.L.; Laskar, J.;
Gate-controlled negative differential resistance in drain current characteristics of AlGaAs/InGaAs/GaAs pseudomorphic MODFETs
1989 / IEEE
By: Baillargeon, J.N.; Ketterson, A.A.; Laskar, J.; Kolodzey, J.; Cheng, K.Y.; Adesida, I.; Brock, T.;
Characteristics of GaAs/AlGaAs-doped channel MISFET's at cryogenic temperatures
1990 / IEEE
By: Kolodzey, J.; Laskar, J.; Cho, A.Y.; Adesida, I.; Ketterson, A.A.;
Effect of reduced temperature on the f/sub T/ of AlGaAs/GaAs heterojunction bipolar transistors
1991 / IEEE
By: Kolodzey, J.; Cunningham, B.T.; Hanson, A.W.; Laskar, J.; Prasad, S.J.; Stillman, G.;
Experimental and theoretical investigation of the DC and high-frequency characteristics of the negative differential resistance in pseudomorphic AlGaAs/InGaAs/GaAs MODFET's
1992 / IEEE
By: Leburton, J.-P.; Bigelow, J.M.; Laskar, J.; Kolodzey, J.;
Ultra low-noise performance of 0.15-micron gate GaAs MESFET's made by direct ion implantation for low-cost MMIC's applications
1992 / IEEE
By: Feng, M.; Neidhard, R.; Kruse, J.; Laskar, J.;
Cryogenic small-signal model for 0.55 mu m gate-length ion-implanted GaAs MESFET's
1992 / IEEE
By: Kruse, J.; Laskar, J.; Feng, M.;
Cryogenic microwave performance of 0.5- mu m InGaAs MESFET's
1992 / IEEE
By: Laskar, J.; Maranowski, S.; Kolodzey, J.; Feng, M.;
Super-low-noise performance of direct-ion-implanted 0.25- mu m-gate GaAs MESFET's
1992 / IEEE
By: Kruse, J.; Laskar, J.; Feng, M.;
Non-equilibrium transport in ultra-fast InGaAs/InP heterostructure bipolar transistors
1991 / IEEE / 0-87942-626-8
By: Hamm, R.A.; Nottenburg, R.N.; Laskar, J.; Panish, M.B.; Levi, A.F.J.; Humphrey, D.A.; Kolodzey, J.; Schmitt-Rink, S.;
High speed cryogenic operation of sub-micron pseudomorphic InGaAs/GaAs FETs
1991 / IEEE / 0-7803-0491-8
By: Kolodzey, J.; Feng, M.; Adesida, I.; Ketterson, A.; Kruse, J.; Maranowski, S.; Laskar, J.;
Temperature-dependent bit-error-rate characterization of ultralow-noise GaAs MESFET's for 3-Gb/s operation
1993 / IEEE
By: Laskar, J.; Kruse, J.; Feng, M.;
Thin film Ba/sub 0.6/K/sub 0.4/BiO/sub 3/ microwave devices
1993 / IEEE
By: Feng, M.; Laskar, J.; Kruse, J.; Van Harlingen, D.J.; Schweinfurth, R.A.; Teepe, M.R.; Platt, C.E.;
Forward transit delay in In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistors with nonequilibrium electron transport
1993 / IEEE
By: Baquedano, J.A.; Nottenburg, R.N.; Laskar, J.; Kolodzey, J.; Levi, A.F.J.;
Forward transit delay in In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistors with nonequilibrium electron transport
1993 / IEEE
By: Levi, A.F.J.; Nottenburg, R.N.; Laskar, J.;
Low-power performance of 0.5- mu m JFET for low-cost MMIC's in personal communications
1993 / IEEE
By: Kasahara, J.; Takano, C.; Wada, M.; Feng, M.; Laskar, J.; Kruse, J.; Scherrer, D.;
On the speed and noise performance of direct ion-implanted GaAs MESFETs
1993 / IEEE
By: Feng, M.; Laskar, J.;
Comment on "On the speed and noise performance of direct ion-implanted GaAs MESFET's" [with reply]
1994 / IEEE
By: Moll, N.; Laskar, J.; Feng, M.;
Low noise device and amplifier characterization for deep space communication applications
1993 / IEEE / 0-7803-1209-0
By: Bautista, J.J.; Laskar, J.; Feng, M.; Scherrer, D.; Fujiwara, B.;
An ultra-low noise cryogenic Ka-Band InGaAs/InAlAs/InP HEMT front-end receiver
1994 / IEEE
By: Laskar, J.; Freudenthal, A.; Liu, P.H.; Streit, D.; Dia, R.M.; Pospieszalski, M.W.; Tan, K.L.; Fujiwara, B.; Bautista, J.J.; Lai, R.; Ng, G.I.;
On-wafer calibration techniques and applications at V-band
1994 / IEEE
By: Nishimoto, M.; Lai, R.; Laskar, J.; Hamai, M.;
Enhanced cryogenic on-wafer techniques for accurate In/sub x/Ga/sub 1-x/As HEMT device models
1994 / IEEE / 0-7803-1778-5
By: Ng, G.I.; Lo, D.C.; Liu, P.H.; Streit, D.C.; Tan, K.L.; Laskar, J.; Hamai, M.; Bautista, J.J.; Lai, R.; Nishimoto, M.;
Ultra-low noise HEMT device models: application of on-wafer cryogenic noise analysis and improved parameter extraction techniques
1995 / IEEE / 0-7803-2581-8
By: Hamai, M.; Bautista, J.J.; Lai, R.; Szydlik, P.; Laskar, J.; Nishimoto, M.;
Cryogenic high frequency operation of tunneling hot-electron transfer amplifiers
1995 / IEEE / 0-7803-2442-0
By: Moise, T.S.; Nishimoto, M.; Hamai, M.; Laskar, J.; Murti, M.R.;
Development of accurate on-wafer, cryogenic characterization techniques
1996 / IEEE
By: Nishimoto, M.; Bautista, J.J.; Laskar, J.; Lai, R.; Hamai, M.;
Simulation of a subcarrier multiplexed communications system: a performance enhancement tool
1996 / IEEE / 0-7803-3246-6
By: Han, S.; Blumenthal, D.; Laskar, J.; Vaughn, M.;
Development of a coplanar waveguide membrane probe for non-destructive evaluation of thin film structures
1996 / IEEE / 0-7803-3246-6
By: Smith, K.; Laskar, J.; Seltmann, E.W.;
A coplanar waveguide probe with applications to thin film dielectric measurements
1995 / IEEE / 0-7803-3034-X
By: Smith, K.; Laskar, J.; Seltmann, E.W.; Gleason, R.;
A COPLANAR WAVEGUIDE PROBE WITH APPLICATIONS TO THIN FILM DIELECTRIC MEASUREMENTS
1995 / IEEE / 0-7803-3034-X
By: Seltmann, E.W.; Gleason, R.; Smith, K.; Laskar, J.;
Frequency domain measurements of VSPA: a novel packaging technology
1995 / IEEE / 0-7803-3034-X
By: Swaminathan, M.; Laskar, J.; Richter, A.; Hao, J.; Mosley, J.;
FREQUENCY DOMAIN MEASUREMENTS OF VSPA: A NOVEL PACKAGING TECHNOLOGY
1995 / IEEE / 0-7803-3034-X
By: Swaminathan, M.; Laskar, J.; Richter, A.; Hao, J.; Mosley, J.;
Characterization of a small peripheral array package
1996 / IEEE
By: Swaminathan, M.; Laskar, J.; Richter, A.; Jie Hao; Mosley, J.;
Thin film pseudomorphic AlAs/In/sub 0.53/Ga/sub 0.47/As/InAs resonant tunnelling diodes integrated onto Si substrates
1996 / IEEE
By: Evers, N.; Vendier, O.; Chun, C.; Murti, M.R.; Jokerst, N.M.; Moise, T.S.; Kao, Y.-C.; Laskar, J.;
Comparison of air coplanar microprobes for on-wafer measurements at W-band
1997 / IEEE / 0-7803-3814-6
By: Laskar, J.; Pham, A.; Pence, J.; Basu, S.;
InP HBT on Si substrates with integral passive components: a wafer scale package
1997 / IEEE / 0-7803-3814-6
By: Chau, H.-F.; Jokerst, N.M.; Laskar, J.; Evers, N.; Chun, C.; Beam, E., III;
Optimization of RF (MMIC)/optical subcarrier multiplexed communications system
1997 / IEEE / 0-7803-3814-6
By: Blumenthal, D.J.; Laskar, J.; Shell, M.; Gaudino, R.; Han, S.;
Surface mount microwave package characterization technique
1997 / IEEE / 0-7803-3814-6
By: Chun, C.; Pham, A.; Hutchison, B.; Laskar, J.;
Integration of thin film passive circuits using high/low dielectric constant materials
1997 / IEEE / 0-7803-3857-X
By: Tummala, R.R.; Pham, A.; Haridass, A.; Chahal, P.; Laskar, J.; Swaminathan, M.; Allen, M.G.;
Fiber-optic links supporting baseband data and subcarrier-multiplexed control channels and the impact of MMIC photonic/microwave interfaces
1997 / IEEE
By: Blumenthal, D.J.; Vaughn, M.D.; Shell, M.D.; Sangwoo Han; Gaudino, R.; Laskar, J.;
Ultra low loss millimeter wave MCM interconnects
1997 / IEEE / 0-7803-4203-8
By: Cole, H.S.; Krishnamurthy, V.; Laskar, J.; Pham, A.; Sitnik-Nieters, T.;
Development of microwave package models utilizing on-wafer characterization techniques
1997 / IEEE
By: Pham, A.; Chun, C.; Hutchison, B.; Laskar, J.;
Review of RF packaging research at Georgia Tech's PRC
1998 / IEEE / 0-7803-4795-1
By: Laskar, J.; Liang, H.; Sutono, S.; Staiculescu, D.; Jokerst, N.; Pham, A.; Chun, C.; Harris, M.; Brooke, M.;
Enhanced modulation bandwidth (20 GHz) of In/sub 0.4/Ga/sub 0.6/As-GaAs self-organized quantum-dot lasers at cryogenic temperatures: role of carrier relaxation and differential gain
1998 / IEEE
By: Laskar, J.; Murty, R.; Bhattacharya, P.; Vineberg, K.; Kamath, K.; Klotzkin, D.;
Analysis and performance of BGA interconnects for RF packaging
1998 / IEEE / 0-7803-4439-1
By: Staiculescu, D.; Moghe, S.; Consolazio, S.; Laskar, J.; Pham, A.;
Integrated 1.55 /spl mu/m receivers using GaAs MMICs and thin film InP detectors
1998 / IEEE / 0-7803-4439-1
By: Laskar, J.; Moon, E.; Vendier, O.; Chun, C.; Brooke, M.; Jokerst, N.M.; Ki, H.C.;
Development of cryogenic load-pull analysis: power amplifier technology performance trends
1998 / IEEE / 0-7803-4471-5
By: Laskar, J.; Gebara, E.; Kikel, T.; Harris, M.;
Development of vertical interconnect surface mount packages
1998 / IEEE / 0-7803-4471-5
By: Estriech, D.; Laskar, J.; Chun, C.; Hongwei Liang;
Ultra low loss millimeter wave multichip module interconnects
1998 / IEEE
By: Laskar, J.; Pham, A.V.H.; Sitnik-Nieters, T.; Cole, H.S.; Krishnamurthy, V.B.;
Membrane probe technology for non-destructive thin-film material characterization
1998 / IEEE / 0-7803-4471-5
By: Pham, A.; Hayden, L.; Peterson, A.F.; Laskar, J.; Mathis, A.;
Development of millimeter wave multi-layer organic based MCM technology
1998 / IEEE / 0-7803-4471-5
By: Sutono, A.; Pham, A.; Sitnik-Nieters, T.; Cole, H.S.; Krishnamurthy, V.; Laskar, J.;
Investigations of multi-layer ceramic-based MCM technology
1998 / IEEE / 0-7803-4965-2
By: Smith, W.R.; Laskar, J.; Pham, A.; Sutono, A.;
Full wave analysis and development of circuit models for flip chip interconnects
1998 / IEEE / 0-7803-4965-2
By: Mather, J.; Laskar, J.; Liang, H.; Staiculescu, D.;
A Digital-baseband/SCM-Control Fiber Unk with Novel Differential Integrated Optic Transmitter and Microwave/Optical Direct Detection Receiver
1997 / IEEE / 4-88552-187-4
By: Shell, M.; Han, S.; Gaudino, R.; Laskar, J.; Blumenthal, D.J.; Vaughn, M.D.;
RTD/CMOS nanoelectronic circuits: thin-film InP-based resonant tunneling diodes integrated with CMOS circuits
1999 / IEEE
By: Matinpour, B.; Bergman, J.I.; Joo, Y.; Chang, J.; Laskar, J.; Beam, E., III; Brar, B.; Brooke, M.A.; Jokerst, N.M.;
In(Ga)As/GaAs self-organized quantum dot lasers: DC and small-signal modulation properties
1999 / IEEE
By: Chervela, N.; Jiang, H.-T.; Singh, J.; Phillips, J.; Klotzkin, D.; Norris, T.B.; Kamath, K.K.; Bhattacharya, P.; Murty, M.R.; Laskar, J.; Sosnowski, T.;
Four channel MMIC-based transmitter module for RF/optical subcarrier multiplexed communications
1999 / IEEE / 0-7803-5135-5
By: Blumenthal, D.J.; Laskar, J.; Matinpour, B.; Chang-Ho Lee; Sangwoo Han;
Temperature dependent MOSFET RF large signal model incorporating self heating effects
1999 / IEEE / 0-7803-5135-5
By: Anderson, T.; Laskar, J.; Yoo, S.; Gebara, E.; Chen, E.; Heo, D.;
Mixed material integration for power amplifier MMICs
1999 / IEEE / 0-7803-5135-5
By: Bergman, J.; Matinpour, B.; Jokerst, N.M.; Laskar, J.; Chun, C.;
GaAs MESFET dual-gate mixer with active filter design for Ku-band applications
1999 / IEEE / 0-7803-5135-5
By: Chang-Ho Lee; Laskar, J.; Sangwoo Han;
Material parameter characterization of multilayer LTCC and implementation of high Q resonators
1999 / IEEE / 0-7803-5135-5
By: Smith, W.R.; Laskar, J.; Sutono, A.; Liang, H.;
Ni-Au surface finish effects on RF performance
1999 / IEEE / 0-7803-5135-5
By: Laskar, J.; Staiculescu, D.; Anaki, I.; Rudy, D.; Sweetman, E.; Mendelsohn, J.;
RF/microwave characterization of multilayer ceramic-based MCM technology
1999 / IEEE
By: Sutono, A.; Smith, W.R.; Laskar, J.; Pham, A.-V.H.;
A compact direct conversion receiver for C-band wireless applications
1999 / IEEE / 0-7803-5604-7
By: Matinpour, B.; Laskar, J.;
Development of three dimensional ceramic-based MCM inductors for hybrid RF/microwave applications
1999 / IEEE / 0-7803-5604-7
By: Smith, W.R.; Laskar, J.; Pham, A.; Sutono, A.;
GaAs MESFET dual-gate mixer with active filter design for Ku-band applications
1999 / IEEE / 0-7803-5604-7
By: Sangwoo Han; Chang-Ho Lee; Laskar, J.;
A C-band low power high dynamic range GaAs MESFET low noise amplifier
1999 / IEEE / 0-7803-5454-0
By: Heo, D.; Yoo, S.; Taylor, S.S.; Laskar, J.;
Investigation of Q enhancement for inductors processed in BiCMOS technology
1999 / IEEE / 0-7803-5454-0
By: Heo, D.; Chen, Y.-J.E.; Anderson, T.; Laskar, J.;
Smart photonics: Optoelectronics integrated onto Si CMOS circuits
1999 / IEEE / 0-7803-5634-9
By: Wills, D.S.; Jung, S.; Laskar, J.; Brooke, M.A.; Jokerst, N.M.; Chang, J.J.; Joo, Y.J.; Brown, A.S.; Lee, M.; Thomas, M.; Vrazel, M.; Cross, J.; Bond, S.; Vendier, O.;
Design rule development for microwave flip chip applications
1999 / IEEE / 0-7803-5597-0
By: Laskar, J.; Staiculescu, D.; Mather, J.;
A compact monolithic C-band direct conversion receiver
2000 / IEEE
By: Chun, C.; Matinpour, B.; Laskar, J.; Lee, C.-H.; Han, S.;
Fully monolithic four channel transmitter IC for RF/optical subcarrier multiplexed communications
2000 / IEEE
By: Laskar, J.; Martinpour, B.; Lee, C.-H.; Han, S.; Blumenthal, D.J.;
Development of a 36 GHz millimeter-wave BGA package
2000 / IEEE / 0-7803-5687-X
By: Hongwei Liang; Panicker, R.; Hyslop, M.; Laskar, J.;
Development of integrated three dimensional Bluetooth image reject filter
2000 / IEEE / 0-7803-5687-X
By: Sutono, A.; Smith, W.R.; Laskar, J.;
RF power amplifier integration in CMOS technology
2000 / IEEE / 0-7803-5687-X
By: Sutono, A.; Heo, D.; Hamai, M.; Chen, Y.J.E.; Laskar, J.; Yoo, S.;
A 5.8 GHz OFDM GaAs MESFET MMIC chip set
2000 / IEEE / 0-7803-5687-X
By: Yoo, S.; Laskar, J.; Chakraborty, S.; Matinpour, B.; Lee, C.-H.; Heo, D.;
A low phase noise X-band MMIC GaAs MESFET VCO
2000 / IEEE
By: Matinpour, B.; Han, S.; Lee, C.-H.; Laskar, J.;
Direct extraction method for internal equivalent circuit parameters of HBT small-signal hybrid-/spl pi/ model
2000 / IEEE / 0-7803-5687-X
By: Kim, B.; Shin, J.-H.; Seok, E.; Suh, Y.; Laskar, J.; Raghavan, A.; Heo, D.;
A novel dc-offset cancellation technique for even-harmonic direct conversion receivers
2000 / IEEE / 0-7803-5687-X
By: Laskar, J.; Chun, C.; Hamai, M.; Chakraborty, S.; Matinpour, B.;
An improved deep sub-micron MOSFET RF nonlinear model with new breakdown current model and drain to substrate nonlinear coupling
2000 / IEEE / 0-7803-5687-X
By: Laskar, J.; Hamai, M.; Yoo, S.; Chen, E.; Gebara, E.; Heo, D.;
Application of digital PGA technology to 20 GHz microwave packages
2000 / IEEE / 0-7803-5687-X
By: Barnes, H.; Laskar, J.; Hongwei Liang; Estreich, D.;
Temperature-dependent noise parameters and modeling of InP/InAlAs/InGaAs HEMTs
2000 / IEEE / 0-7803-5687-X
By: Raghavan, A.; Yoo, L.; Murti, M.R.; Lai, R.; Bautista, J.; Laskar, J.; Nuttinck, S.;
Design rule development for microwave flip-chip applications
2000 / IEEE
By: Tentzeris, E.M.; Laskar, J.; Staiculescu, D.;
Experimental study and modeling of microwave bond wire interconnects
2000 / IEEE / 0-7803-6369-8
By: Cafaro, N.G.; Sutono, A.; Tentzeris, E.; Laskar, J.;
0.24-um CMOS technology for Bluetooth power applications
2000 / IEEE / 0-7803-6267-5
By: Chen, E.; Bien, D.; Laskar, J.; Hamai, M.; Heo, D.;
Wideband scaleable electrical model for microwave/millimeter wave flip chip interconnects
2000 / IEEE / 0-7803-6450-3
By: Staiculescu, D.; Laskar, J.; Sutono, A.;
Multi-layer fully organic-based system on package (SOP) technology for RF applications
2000 / IEEE / 0-7803-6450-3
By: Tummala, R.; Laskar, J.; Lim, K.; Sutono, A.; Davis, M.F.;
Development of a millimeter wave system-on-a-package utilizing MCM integration
2000 / IEEE / 0-7803-6450-3
By: Laskar, J.; Pham, A.; Sprinceanu, L.; Piacente, P.; Krishnamurthy, V.; Schmanski, B.; Marcinkewicz, W.; Bates, D.;
Compact implementation of component library in LTCC technology and its application to CMOS RF power amplifier design
2000 / IEEE / 0-7803-6450-3
By: Heo, D.; Sutono, A.; Laskar, J.; Lim, K.; Chen, E.;
An improved deep submicrometer MOSFET RF nonlinear model with new breakdown current model and drain-to-substrate nonlinear coupling
2000 / IEEE
By: Seung-Yup Yoo; Yi-Jan Emery Chen; Gebara, E.; Deukhyoun Heo; Laskar, J.; Youngsuk Suh; Hamai, M.;
Novel DC-offset cancellation techniques for even-harmonic direct conversion receivers
2000 / IEEE
By: Matinpour, B.; Laskar, J.; Chakraborty, S.;
Temperature-dependent small-signal and noise parameter measurements and modeling on InP HEMTs
2000 / IEEE
By: Grundbacher, R.; Laskar, J.; Murti, M.R.; Liu, P.H.; Chin, P.; Barsky, M.; Nuttinck, S.; Lai, R.; Bautista, J.; Bergman, J.I.; Raghavan, A.; Yoo, S.;
Application of digital PGA technology to K-band microcircuit and microwave subsystem packages
2000 / IEEE
By: Hongwei Liang; Estreich, D.; Laskar, J.; Barnes, H.L.;
Microsystem optoelectronic integration for mixed multisignal systems
2000 / IEEE
By: Jung, S.; Vrazel, M.; Brown, A.S.; Wills, D.S.; Joo, Y.; Brooke, M.A.; Jokerst, N.M.; Laskar, J.; Chang, J.J.;
GaAs MESFET-based MMIC VCO with low phase noise performance
2000 / IEEE / 0-7803-5968-2
By: Matinpour, B.; Han, S.; Lee, C.-H.; Laskar, J.;

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