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Author: Kamiyama, S.

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The Super Aged Society : Japan's the KAITEKI Institute studies how to keep the elderly healthy and active

2014 / IEEE
By: Kamiyama, S.;

A new index-guided AlGaInP visible semiconductor laser with very small astigmatism

1989 / IEEE
By: Takahashi, Y.; Ogura, M.; Ohnaka, K.; Sasai, Y.; Kamiyama, S.; Hoshina, J.; Mannoh, M.;

Ta/sub 2/O/sub 5/ plasma CVD technology for DRAM stacked capacitors

1989 / IEEE / 0-7803-0817-4
By: Zenke, M.; Kamiyama, S.; Numasawa, Y.; Sakamoto, M.;

Theoretical analysis of valence subband structures and optical gain of GaInP/AlGaInP compressive strained-quantum wells

1993 / IEEE
By: Mannoh, M.; Uenoyama, T.; Kamiyama, S.; Ohnaka, K.; Ban, Y.;

Highly reliable 2.5 nm Ta/sub 2/O/sub 5/ capacitor process technology for 256 Mbit DRAMs

1991 / IEEE / 0-7803-0243-5
By: Mori, H.; Saeki, T.; Kamiyama, S.; Numasawa, Y.;

Analysis of GaInP/AlGaInP compressive strained multiple-quantum-well laser

1994 / IEEE
By: Uenoyama, T.; Kamiyama, S.; Ohnaka, K.; Ban, Y.; Mannoh, M.;

Extremely low threshold current operation of 638 nm GaInP/AlGaInP strained MQW lasers

1992 / IEEE / 0-7803-0817-4
By: Ishibashi, A.; Ohta, H.; Kidoguchi, I.; Hoshina, J.; Ban, Y.; Mannoh, M.; Kamiyama, S.; Ohnaka, K.;

AlGaInP visible laser diode with extremely high quantum efficiency having lateral leaky waveguide structure

1992 / IEEE / 0-7803-0817-4
By: Ishibashi, A.; Ohta, H.; Hoshina, J.; Mannoh, M.; Ban, Y.; Kidoguchi, I.; Kamiyama, S.; Ohnaka, K.;

Effect of spin-orbit split-off bands on GaInP/AlGaInP strained quantum well lasers

1994 / IEEE
By: Mannoh, M.; Uenoyama, T.; Kamiyama, S.; Ohnaka, K.;

Ultra-thin TiN/Ta/sub 2/O/sub 5W capacitor technology for 1 Gbit DRAM

1993 / IEEE / 0-7803-1450-6
By: Kasai, N.; Tanigawa, T.; Tatsumi, T.; Oshida, M.; Ishitani, A.; Watanabe, H.; Suzuki, H.; Kamiyama, S.; Sakai, A.;

Low-temperature integrated process below 500/spl deg/C for thin Ta/sub 2/O/sub 5/ capacitor for giga-bit DRAMs

1994 / IEEE / 0-7803-2111-1
By: Watanabe, H.; Suzuki, H.; Kamiyama, S.; Sakao, M.; Takaishi, Y.;

1G DRAM cell with diagonal bit-line (DBL) configuration and edge operation MOS (EOS) FET

1994 / IEEE / 0-7803-2111-1
By: Mori, H.; Shibahara, K.; Koyama, K.; Hamada, T.; Watanabe, H.; Oikawa, R.; Ohnishi, S.; Itoh, K.; Yamashita, H.; Kojima, Y.; Nakajima, K.; Kamiyama, S.;

Application of real-time simulation to the lane-keeping system

1994 / IEEE / 0-7803-2105-7
By: Adachi, T.; Kamiyama, S.; Butsuen, T.;

Theoretical studies of GaInP-AlGaInP strained quantum-well lasers including spin-orbit split-off band effect

1995 / IEEE
By: Uenoyama, T.; Kamiyama, S.; Ohnaka, K.; Mannoh, M.;

Self-sustained pulsation in 650 nm band AlGaInP visible-laser diodes with highly doped saturable absorbing layer

1995 / IEEE
By: Kidoguchi, I.; Kamiyama, S.; Adachi, H.; Uenoyama, T.;

Low-noise 650 nm-band AlGaInP visible lasers with highly-doped saturable absorbing (HDSA) layer

1995 / IEEE / 0-7803-2700-4
By: Fukuhisa, T.; Kamiyama, S.; Adachi, I.; Kidoguchi; Uenoyama, T.; Takamori, A.; Mannoh, P.;

680 nm-band self-sustained pulsating AlGaInP visible laser diodes

1995 / IEEE / 0-7803-2147-2
By: Adachi, H.; Ohnaka, K.; Kamiyama, S.; Kidoguchi, I.;

630 nm-band low noise AIGalnP visible laser diodes with self-sustained pulsation

1995 / IEEE / 0-7803-2400-5
By: Adachi, H.; Ohnaka, K.; Kamiyama, S.; Kidoguchi, I.;

Low-noise 650-nm-band AlGaInP visible laser diodes with a highly doped saturable absorbing layer

1997 / IEEE
By: Kidoguchi, I.; Takamori, A.; Mannoh, M.; Fukuhisa, T.; Kamiyama, S.; Adachi, H.;

Stokesian Dynamic Simulations of the Microstructure of Ferrofluids

1998 / IEEE / 0-7803-5118-5
By: Satoh, A.; Kamiyama, S.; Chantrell, R.W.; Coverdale, G.N.;

Shared tungsten structures for FEOL/BEOL compatibility in logic-friendly merged DRAM

1998 / IEEE / 0-7803-4774-9
By: Fukui, K.; Drynan, J.M.; Tanigawa, T.; Yamaguchi, H.; Takenaka, M.; Inoue, K.; Hamada, M.; Nobusawa, H.; Matsumoto, A.; Kamiyama, S.; Ishigami, T.; Sugai, K.;

High temperature and high power operation of mode stabilized GaInP/AlGaInP Strained MQW Lasers

1992 / IEEE / 4-930813-51-4
By: Ishibashi, A.; Mannoh, M.; Ohnaka, K.; Ban, Y.; Kamiyama, S.; Ohta, H.; Kidoguchi, I.; Hoshina, J.;

Highly reliable MIM capacitor technology using low pressure CVD-WN cylinder storage-node for 0.12 /spl mu/m-scale embedded DRAM

1999 / IEEE / 4-930813-93-X
By: Koyama, K.; Takaishi, Y.; Drynan, J.M.; Kamiyama, S.;

Numerical analysis of effect of distribution of mass concentration on steady magnetic fluid flow in a circular straight pipe

2000 / IEEE / 0-7803-5943-7
By: Shimada, K.; Kamiyama, S.;

Numerical analysis of effect of distribution of mass concentration on steady magnetic fluid flow in a straight tube

2000 / IEEE
By: Kamiyama, S.; Shimada, K.;

The effects of plasma-induced damage on transistor degradation and the relationship to field programmable gate array performance

2001 / IEEE / 0-7803-6587-9
By: Kamiyama, S.; Takaso, T.; Gitlin, D.; Hart, M.J.; Nakayama, K.; Lui, K.; Vedagarbha, V.; Lee, J.K.J.; Pagaduan, F.E.;

Impact of low-temperature buffer layers on nitride-based optoelectronics

2002 / IEEE
By: Akasaki, I.; Kamiyama, S.; Amano, H.;

Decoupling by restricted state feedback

1976 / IEEE
By: Furuta, K.; Kamiyama, S.;

Improvement in the uniformity and the thermal stability of Hf-silicate gate dielectric by plasma-nitridation

2003 / IEEE / 4-89114-037-2
By: Maeda, T.; Horiuchi, A.; Takada, H.; Tsutsumi, Y.; Torii, K.; Kamiyama, S.; Arikado, T.; Aoyama, T.; Kitajima, H.;

In-situ HfSiON/SiO₂ gate dielectric fabrication using hot wall batch system

2003 / IEEE / 4-89114-037-2
By: Torii, K.; Mitsuhashi, R.; Sasaki, T.; Tamura, Y.; Kitajima, H.; Aoyama, T.; Kamiyama, S.; Arikado, T.;

Dielectric breakdown mechanism of HfSiON/SiO/sub 2/ gate dielectric

2004 / IEEE / 0-7803-8289-7
By: Torii, K.; Arikado, T.; Kitajima, H.; Miyazaki, S.; Tamura, Y.; Kamiyama, S.; Aoyama, T.;

SiN-capped HfSiON gate stacks with improved bias temperature instabilities for 65 nm-node low-standby-power transistors

2004 / IEEE / 0-7803-8289-7
By: Ida, T.; Aoyama, T.; Kume, S.; Hoshi, T.; Amai, H.; Yasuhira, M.; Ootsuka, F.; Izumi, N.; Sasaki, T.; Tamura, Y.; Arikado, T.; Kitajima, H.; Torii, K.; Kamiyama, S.;

UV laser diode with 350.9 nm-lasing wavelength grown on AlGaN template

2004 / IEEE / 0-7803-8627-2
By: Honshio, A.; Mishima, S.; Kasugai, H.; Kawashima, T.; Iida, K.; Miyake, Y.; Akasaki, I.; Kamiyama, S.; Amano, H.; Iwaya, M.;

Proposal of new HfSiON CMOS fabrication process (HAMDAMA) for low standby power device

2004 / IEEE / 0-7803-8684-1
By: Kitajima, H.; Miura, T.; Kamiyama, S.; Kobayashi, Y.; Arikado, T.; Torii, K.; Maeda, T.; Aoyama, T.; Yamashita, K.;

Depletion-free poly-Si gate high-k CMOSFETs

2004 / IEEE / 0-7803-8684-1
By: Itoh, H.; Kim, W.S.; Aoyama, T.; Kamiyama, S.; Maeda, T.; Arikado, T.; Kitajima, H.; Torii, K.; Kawahara, T.;

Impact of electrode-side chemical structures on electron mobility in metal/HfO/sub 2/ MISFETs with sub-1nm EOT

2005 / IEEE / 4-900784-00-1
By: Nara, Y.; Ootsuka, F.; Ogawa, O.; Kamiyama, S.; Akasaka, Y.; Sasaki, T.; Miyagawa, K.; Shiraishi, K.;

Recent progress in nitride-based UV light emitters

2005 / IEEE / 0-7803-9217-5
By: Iwaya, M.; Amano, H.; Akasaki, I.; Kamiyama, S.;

UV laser diode with 350.9-nm-lasing wavelength grown by hetero-epitaxial-lateral overgrowth technology

2005 / IEEE
By: Akasaki, I.; Amano, H.; Iwaya, M.; Miyake, Y.; Honshio, A.; Kamiyama, S.; Mishima, S.; Kasugai, H.; Kawashima, T.; Iida, K.;

Oxidation process of HfO/sub 2//SiO/sub 2//Si structures observed by high-resolution RBS

2006 / IEEE / 1-4244-0161-5
By: Watanabe, H.; Nara, Y.; Kamiyama, S.; Torii, K.; Kimura, K.; Uematsu, M.; Shiraishi, K.; Suzuki, M.; Nakajima, K.; Zhao Ming; Yamada, K.; Chikyow, T.;

Nitride-Based UV Lasers

2007 / IEEE / 978-1-4244-0924-2
By: Imura, M.; Nagamatsu, K.; Iida, K.; Kawashima, T.; Okada, N.; Kato, N.; Balakrishnan, K.; Bandoh, A.; Akasaki, I.; Amano, H.; Kamiyama, S.; Iwaya, M.;

Single Metal/Dual High-k Gate Stack with Low Vth and Precise Gate Profile Control for Highly Manufacturable Aggressively Scaled CMISFETs

2007 / IEEE / 978-1-4244-1507-6
By: Mise, N.; Ohji, Y.; Nara, Y.; Ono, T.; Sato, M.; Murayama, K.; Kamiyama, S.; Eimori, T.; Morooka, T.;

Band Edge Gate First HfSiON/Metal Gate n-MOSFETs using ALD-La2O3 Cap Layers Scalable to EOT=0.68 nm for hp 32 nm Bulk Devices with High Performance and Reliability

2007 / IEEE / 978-1-4244-1507-6
By: Nara, Y.; Aoyama, T.; Ootuka, M.; Kitajima, M.; Kurosawa, E.; Miura, T.; Kamiyama, S.;

Hf-based high-k gate dielectrics - Scalability for hp45 node and beyond -

2006 / IEEE / 978-1-4244-0603-6
By: Kamiyama, S.; Seiji Inumiya; Yasuo Nara; Kunio Nakamura;

Physical understanding of the reliability improvement of dual high-k CMOSFETs with the fifth element incorporation into HfSiON gate dielectrics

2008 / IEEE / 978-1-4244-1802-2
By: Miyazaki, S.; Uedono, A.; Yamabe, K.; Chikyow, T.; Adachi, T.; Shiraishi, K.; Morooka, T.; Kadoshima, M.; Kamiyama, S.; Mise, N.; Umezawa, N.; Sato, M.; Ohji, Y.; Nara, Y.; Eimori, T.; Aoyama, T.; Yamada, K.;

Proposal of Single Metal/Dual High-$k$ Devices for Aggressively Scaled CMISFETs With Precise Gate Profile Control

2009 / IEEE
By: Ono, T.; Eimori, T.; Morooka, T.; Mise, N.; Sato, M.; Mise, N.; Ohji, Y.; Nara, Y.; Kamiyama, S.;

Gate-first high-k/metal gate stack for advanced CMOS technology

2008 / IEEE / 978-1-4244-2185-5
By: Kamiyama, S.; Morooka, T.; Kadoshima, M.; Mise, N.; Nara, Y.; Matsuki, T.; Eimori, T.; Ohji, Y.; Aoyama, T.; Ono, T.; Sato, M.;

Systematic Study of Vth controllability using ALD-Y2O3, La2O3, and MgO2 layers with HfSiON/metal gate first n-MOSFETs for hp 32 nm bulk devices

2008 / IEEE / 978-1-4244-2377-4
By: Kamiyama, S.; Ishikawa, D.; Kurosawa, E.; Nakata, H.; Ohji, Y.; Ootuka, M.; Aoyama, T.; Nara, Y.; Kitajima, M.;

Physical model of the PBTI and TDDB of la incorporated HfSiON gate dielectrics with pre-existing and stress-induced defects

2008 / IEEE / 978-1-4244-2377-4
By: Eimori, T.; Shiraishi, K.; Kamiyama, S.; Mise, N.; Nakamura, M.; Morooka, T.; Tachibana, A.; Sugino, S.; Arimura, H.; Shimokawa, J.; Umezawa, N.; Sato, M.; Ohji, Y.; Nara, Y.; Nabatame, T.; Aoyama, T.; Yamada, K.; Watanabe, H.; Yamabe, K.;

Negatively charged deep level defects generated by Yttrium and Lanthanum incorporation into HfO2 for Vth adjustment, and the impact on TDDB, PBTI and 1/f noise

2009 / IEEE / 978-1-4244-5641-3
By: Shiraishi, K.; Suzuki, T.; Morooka, T.; Matsuki, T.; Sugita, Y.; Kamiyama, S.; Yamabe, K.; Ohji, Y.; Ikeda, K.; Sato, M.; Yugami, J.; Yamada, K.; Ohmori, K.;

IQE and EQE of the nitride-based UV/DUV LEDs

2011 / IEEE / 978-1-55752-911-4
By: Ban, K.; Yamaguchi, M.; Amano, H.; Honda, Y.; Tanikawa, T.; Park, G.J.; Nagata, K.; Akasaki, I.; Kamiyama, S.; Takeuchi, T.; Iwaya, M.; Takeda, K.; Nonaka, K.;

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