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Author: Johnson, F.G.

Results

Wet-chemistry surface treatment for dark-current reduction that preserves lateral dimensions of reactive ion etched Ga/sub 0.47/In/sub 0.53/As p-i-n diode photodetectors
1997 / IEEE
By: Stone, D.R.; Wilson, R.A.; Dagenais, M.; King, O.; Johnson, F.G.; Agarwala, S.; Tabatabaei, S.A.; Merritt, S.A.; Chen, Y.J.; Porkolab, G.A.;
A novel structure of delta-strained quantum well for polarization insensitive semiconductor devices at 1.55 /spl mu/m
1996 / IEEE / 0-7803-3160-5
By: Dagenais, M.; Johnson, F.G.; Gopalan, B.; Hovinen, M.;
Dependence of the linewidth enhancement factor in lasers on the number of compressively strained quantum wells
1997 / IEEE / 0-7803-4125-2
By: Cho, S.H.; Dagenais, M.; Stone, D.; Johnson, F.G.; Song, J.H.; Vusirikala, V.; Nam, K.; Hovinen, M.; Lu, C.C.;
Tunable external cavity semiconductor lasers with a 50 dB side mode suppression ratio
1997 / IEEE / 0-7803-4125-2
By: Nam, K.; Heim, P.; Fan, Z.F.; Johnson, F.G.; Dagenais, M.; Cho, S.H.;
lnGaAs p-i-n photodiodes on AIGaAs/GaAs waveguides and monolithic integration applications
1997 / IEEE / 0-7803-4125-2
By: Dagenais, M.; Chen, Y.J.; Wenhua Lin; Yen-Ping Ho; Hryniewicz, J.V.; Stone, D.R.; Tabatabaei, S.A.; Towner, F.J.; Liu, Y.C.; Johnson, F.G.; Shih-Hsiang Hsu; Agarwala, S.;
A simple wide-spectral-range lnGaAs photodiode
1997 / IEEE / 0-7803-4125-2
By: Liu, Y.C.; Ho, P.T.; Barbier, P.R.; Johnson, F.G.;
Dependence of the linewidth enhancement factor on the number of compressively strained quantum well in lasers
1997 / IEEE
By: Hovinen, M.; Lu, C.C.; Cho, S.H.; Dagenais, M.; Nam, K.; Stone, D.; Johnson, F.G.; Song, J.H.; Vusirikala, V.;
Polarization insensitive 1.55-�m optical amplifier with GaAs delta-strained Ga/sub 0.47/In/sub 0.53/As quantum wells
1997 / IEEE
By: Seiferth, F.; Stone, D.R.; Dagenais, M.; Chen, Y.J.; Johnson, F.G.; Fox, S.; Merritt, S.A.; Whaley, R.D.;
High quality dry etched InP semiconductor laser facets and characterization using atomic force microscopy
1997 / IEEE / 0-7803-3895-2
By: Stone, D.R.; Degenais, M.; Gopalan, B.; Whaley, R.D.; Gomez, R.D.; King, O.; Johnson, F.G.; Agarwala, S.;
Polarization insensitive 1.55 /spl mu/m optical amplifier with GaAs delta-strained Ga/sub 0.47/In/sub 0.53/As quantum wells
1997 / IEEE / 0-7803-3895-2
By: Dagenais, M.; Chen, Y.J.; Fox, S.; Whaley, R.D.; Stone, D.R.; Merritt, S.A.; Johnson, F.G.; Seiferth, F.;
High butt-coupling efficiency to single-mode fibers using a 1.55-�m InGaAsP laser integrated with a tapered ridge mode transformer
1997 / IEEE
By: Bartolo, R.E.; Saini, S.S.; Vusirikala, V.; Stone, D.; Johnson, F.G.; Dagenais, M.; Agarwala, S.; Whaley, R.;
High butt-coupling efficiency to single mode fibers using a 1.55 /spl mu/m InGaAsP laser integrated with a tapered ridge mode transformer
1997 / IEEE / 0-7803-3895-2
By: Johnson, F.G.; Dagenais, M.; Agrawala, S.; Whaley, R.; Stone, D.; Saini, S.S.; Bartolo, R.E.; Vusirikala, V.;
High power diffraction limited output from a tapered laser operating at 1.55 /spl mu/m
1997 / IEEE / 0-7803-3895-2
By: Fox, S.; Cho, S.H.; Dagenais, M.; Stone, D.; Johnson, F.G.;
InGaAs/InP/AlGaAs/GaAs p-i-n photodetector array with low capacitance air-bridge coplanar metal waveguides and its monolithic WDM applications
1998 / IEEE / 1-55752-521-8
By: Tabatabaei, S.A.; Hsu, S.-H.; Chen, Y.J.; Stone, D.R.; Agarwala, S.; Cho, P.; Hrynlewicz, J.V.; Johnson, F.G.;
1.55-/spl mu/m InGaAsP-InP laser arrays with integrated-mode expanders fabricated using a single epitaxial growth
1997 / IEEE
By: Saini, S.S.; Vusirikala, V.; Dagenais, M.; Stone, D.R.; Johnson, F.G.; Whaley, R.D.; Agarwala, S.; Bartolo, R.E.;
Single-longitudinal-mode, nonantireflection-coated, fiber grating laser with a 50-dB side-mode suppression ratio
1998 / IEEE / 1-55752-339-0
By: Dagenais, M.; Song, J.H.; Cho, S.H.; Heim, P.J.S.; Johnson, F.G.; Fan, Z.F.; Sirkis, J.; Sivanesan, P.;
Quantum-confined Stark effect in partially strained quantum wells
1998 / IEEE / 1-55752-339-0
By: Johnson, F.G.; Zhou, W.; Pamulapati, J.; Shen, H.;
1.05 W from the mostly diffraction-limited 1.55-/spl mu/m InGaAsP/InP-tapered laser
1998 / IEEE / 1-55752-339-0
By: Dagenais, M.; Stone, D.; Johnson, F.G.; Vusirikala, V.; Fox, S.; Cho, S.H.;
InGaAs/InP p-i-n photodiodes integrated with AlGaAs/GaAs optical waveguides and air-bridge coplanar metal waveguides using total internal reflectors
1998 / IEEE / 1-55752-339-0
By: Stone, D.R.; Chen, Y.J.; Hryniewicz, J.V.; King, O.; Johnson, F.G.; Tabatanaei, S.A.; Agarwala, S.; Shih-Hsiang Hsu;
Effect of a deep-level trap on hole transport in InAlAs/InGaAs metal-semiconductor-metal photodetectors
1998 / IEEE / 1-55752-339-0
By: Junghwan Kim; Johnson, F.G.; Lee, K.J.; Lee, C.H.; Johnson, W.B.;
1.9-W quasi-CW from a near-diffraction-limited 1.55-�m InGaAsP-InP tapered laser
1998 / IEEE
By: Stone, D.; Vusirikala, V.; Johnson, F.G.; Fox, S.; Cho, S.H.; Dagenais, M.;
Compact mode expanded lasers using resonant coupling between a 1.55-�m InGaAsP tapered active region and an underlying coupling waveguide
1998 / IEEE
By: Vusirikala, V.; Saini, S.S.; Dagenais, M.; Stone, D.; Johnson, F.G.; Whaley, R.;
InGaAs/InP p-i-n heterostructure photodiode arrays on AlGaAs/GaAs waveguide films by solid source molecular beam epitaxy
1998 / IEEE / 0-7503-0556-8
By: Chen, Y.J.; Towner, F.J.; Hryniewicz, J.V.; Agarwala, S.; Stone, D.R.; Johnson, F.G.; Tabatabaei, S.A.; Shih-Hsiang Hsu;
Detuned loading effect and high-speed modulation of fiber grating semiconductor lasers
1998 / IEEE
By: Heim, P.J.S.; Fan, Z.F.; Dagenais, M.; Stone, D.R.; Johnson, F.G.; Hu, Y.; Song, J.H.;
10 Gb/s monolithically integrated optical waveguide and pin photodetector for WDM applications
1998 / IEEE / 84-89900-14-0
By: Cho, P.S.; Shih-Hsiang Hsu; Stone, D.R.; Chen, Y.J.; Lowry, C.W.; Hryniewicz, J.V.; King, O.; Johnson, F.G.; Tabatabael, S.A.;
High power near diffraction limited external cavity single-angled facet tapered lasers, tunable from 1.505 to 1.565 /spl mu/m and 0.795 to 0.855 /spl mu/m with high spectral purity
1998 / IEEE / 0-7803-4947-4
By: Hu, Y.; Song, J.H.; Fox, S.; Cho, S.H.; Dagenais, M.; Fan, Z.F.; Bugge, F.; Erbert, G.; Stone, D.; Johnson, F.G.;
Parametric analysis of AlAs wet oxidation process for application in VCSELs
1998 / IEEE / 0-7803-4947-4
By: Koley, B.; Dagenais, M.; Simonis, G.; Johnson, F.G.; Whaley, R., Jr.; Wasiczko, L.;
Detuned-loading effect in fiber Bragg grating semiconductor lasers
1998 / IEEE / 0-7803-4947-4
By: Stone, D.R.; Johnson, F.G.; Cho, S.H.; Hu, Y.; Dagenais, M.; Heim, P.J.S.; Fan, Z.F.; Song, J.H.;
A method of incorporating wet-oxidized III-V semiconductor layers into indium phosphide based lasers and amplifiers
1999 / IEEE / 0-7803-5562-8
By: Saini, S.S.; Johnson, F.G.; Koley, B.; Dagenais, M.;
Mode expanded optical switch in resonant vertically coupled waveguides
1999 / IEEE
By: Dagenais, M.; Zhou, W.; Pamulapati, J.; Shen, H.; Saini, S.S.; Stone, D.; Johnson, F.G.; Bartolo, R.E.; Heim, P.J.S.;
Compact low-loss vertical resonant mode coupling between two well-confined waveguides for monolithic integration
1999 / IEEE / 0-7803-5634-9
By: Grover, R.; Zhou, W.; Hu, Y.; Dilli, Z.; Saini, S.S.; Dagenais, M.; Pamulapati, J.; Shen, H.; Stone, D.R.; Johnson, F.G.;
Dependence of the light-current characteristics of 1.55-�m broad-area lasers on different p-doping profiles
2000 / IEEE
By: Heim, P.J.S.; Cho, S.H.; Han, I.K.; Dagenais, M.; Woo, D.H.; Johnson, F.G.; Song, J.H.; Kim, S.H.;
Dark current reduction in InGaAs metal-semiconductor-metal photodetectors with coplanar waveguide transmission lines
1999 / IEEE / 1-55752-595-1
By: Johnson, W.B.; Johnson, F.G.; Lee, K.J.; Junghwan Kim; Lee, C.H.;
Polarization-independent waveguide modulators using 1.57 /spl mu/m-strained InGaAs-InGaAsP quantum wells
1999 / IEEE / 1-55752-595-1
By: Zhou, W.; Pamulapati, J.; Shen, H.; Zhu, Y.; Dagenais, M.; King, O.; Ren, T.; Saini, S.S.; Bartolo, R.E.; Johnson, F.G.;
Programmable high bit rate pattern generator using a segmented semiconductor-optical amplifier
1999 / IEEE / 1-55752-595-1
By: Cho, P.S.; Hsiao-Yun Yu; Johnson, F.G.; Heim, P.; Mandelberg, H.; Goldhar, J.; Dagenais, M.; Stone, D.R.;
High-power broad-band superluminescent diode with low spectral modulation at 1.5-/spl mu/m wavelength
2000 / IEEE
By: Han, I.K.; Cho, S.H.; Song, J.H.; Dagenais, M.; Hu, Y.; Stone, D.R.; Johnson, F.G.; Heim, P.J.S.;
Lossless 1 x 2 optical switch monolithically integrated on a passive active resonant coupler (PARC) platform
2000 / IEEE
By: Shaw, H.C.; Johnson, F.G.; Hu, Y.; Saini, S.S.; Dagenais, M.; Stone, D.R.; Ott, M.N.; Pamulapati, J.; Zhou, W.; Shen, H.;
Passive active resonant coupler (PARC) platform with mode expander
2000 / IEEE
By: Zhou, W.; Shen, H.; Stone, D.R.; Johnson, F.G.; Saini, S.S.; Dagenais, M.;
Responsivity enhancement in metal-semiconductor-metal photodetector with nanometer fingers
2000 / IEEE / 0-7803-5947-X
By: Safwat, A.M.R.; Kim, J.; Lee, C.H.; Yang, C.H.; Johnson, W.B.; Johnson, F.G.;
Vertically coupled microring resonators using polymer wafer bonding
2001 / IEEE
By: Ritter, K.J.; Johnson, F.G.; Ho, P.-T.; Little, B.E.; Hryniewicz, J.V.; Absil, P.P.;
Passive active resonant coupler (PARC) platform with mode expander
2000 / IEEE / 1-55752-634-6
By: Johnson, F.G.; Dagenais, M.; Saini, S.S.; Pamulapati, J.; Zhou, W.; Shen, H.; Stone, D.R.;
Integrated 1/spl times/2 loss-less Y-junction splitter on a passive active resonant coupler platform
2000 / IEEE / 1-55752-634-6
By: Saini, S.S.; Pamulapati, J.; Zhou, W.; Shen, H.; Stone, D.R.; Hu, Y.; Johnson, F.G.; Dagenais, M.; Grover, R.; Dilli, Z.;
WDM packet routing for high-capacity data networks
2001 / IEEE
By: Yang, Q.; Johnson, F.G.; Hughes, G.D.; Bergman, K.;
Wavelength selective mirror using notched microring resonators
2001 / IEEE / 0-7803-7105-4
By: Ho, P.-T.; Johnson, F.G.; Little, B.E.; Hryniewicz, J.V.; Absil, P.P.;
Periodically-coupled GaAs-AlGaAs and GaInAsP-InP microring resonators with high-order, wide-FSR response
2001 / IEEE / 0-7803-7105-4
By: Johnson, F.G.; Calhoun, L.C.; Ibrahim, T.; Asil, P.P.; Hryniewicz, J.V.; Van, V.; Grover, R.; Ho, P.-T.;
Fast nonlinear all-optical switching in a compact semiconductor microring resonator
2001 / IEEE / 0-7803-7105-4
By: Ibrahim, T.A.; Ho, P.-T.; Goldhar, J.; Grover, R.; Van, V.; Johnson, F.G.; Absil, P.P.; Ritter, K.;
All-optical nonlinear switching in GaAs-AlGaAs microring resonators
2002 / IEEE
By: Johnson, F.G.; Absil, P.P.; Ritter, K.; Ibrahim, T.A.; Grover, R.; Van, V.; Ho, P.-T.; Goldhar, J.;
Parallel-cascaded semiconductor microring resonators for high-order and wide-FSR filters
2002 / IEEE
By: Hryniewicz, J.V.; Johnson, F.G.; Calhoun, L.C.; Absil, P.P.; Ho, P.-T.; Van, V.; Ibrahim, T.A.; Grover, R.;
Optical signal processing using nonlinear semiconductor microring resonators
2002 / IEEE
By: Johnson, F.G.; Absil, P.P.; Ibrahim, T.A.; Van, V.; Ho, P.-T.; Grover, R.;
Very high-order microring resonator filters for WDM applications
2004 / IEEE
By: Hryniewicz, J.V.; Absil, P.P.; Chu, S.T.; Little, B.E.; Trakalo, M.; Johnson, F.G.; King, O.; Van, V.; Gill, D.; Seiferth, F.;
Compact full C-band tunable filters for 50 GHz channel spacing based on high order micro-ring resonators
2004 / IEEE / 1-55752-772-5
By: Seiferth, F.; King, O.; Gill, D.; Johnson, F.G.; Absil, P.P.; Trakalo, M.; Hryniewicz, J.V.; Van, V.; Little, B.E.; Chu, S.T.; Shanton, J.;

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