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Author: Hollis, M.A.

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GaAs permeable base transistors fabricated with 240-mm-periodicity tungsten base gratings
1988 / IEEE
By: Hollis, M.A.; Mathews, R.H.; Nichols, K.B.; Murphy, R.A.; Vera, A.; Bozler, C.O.;
22 GHz performance of the permeable base transistor
1988 / IEEE
By: Kushner, L.J.; Bozler, C.O.; Nichols, K.B.; Mathews, R.H.; Hollis, M.A.;
Large-signal characterization of millimeter-wave transistors using an active load-pull measurement system
1989 / IEEE
By: Actis, R.; Nichols, K.B.; Bozler, C.O.; Chick, R.W.; Hollis, M.A.; Murphy, R.A.; McMorran, R.A.;
Doping profile optimization in silicon permeable base transistors for high-frequency, high-voltage operation
1989 / IEEE
By: McWhorter, A.L.; Murphy, R.A.; Hollis, M.A.; Rathman, D.D.; McNamara, M.J.;
Effects of interface traps on the transconductance and drain current of InP MISFET's
1992 / IEEE
By: Palmateer, S.C.; Mahoney, L.J.; Courtney, W.E.; Calawa, A.R.; Chen, C.-L.; Hollis, M.A.; Manfra, M.J.;
Resonant-tunneling-diode loads: speed limits and applications in fast logic circuits
1992 / IEEE / 0-7803-0573-6
By: Smith, F.W.; Hollis, M.A.; Brown, E.R.; Asbeck, P.M.; Wang, K.-C.;
Application of gated field emitter arrays in microwave amplifier tubes
1995 / IEEE / 0-7803-2669-5
By: Wintucky, E.G.; Goplen, B.; Palmer, D.; Hollis, M.A.; Spindt, C.A.; Green, M.C.; Bandy, S.G.;
High-density gated field-emitter arrays
1995 / IEEE / 0-7803-2669-5
By: Murphy, R.A.; Rabe, S.; Lincoln, G.A.; Harris, C.T.; Hollis, M.A.; Bozler, C.O.; Rathman, D.D.; Smith, H.I.;
Fabrication of field-emitter arrays for inductive-output amplifiers
1997 / IEEE / 0-7803-3990-8
By: Murphy, R.A.; Jensen, K.L.; Ngo, M.T.; Garven, M.; Shaw, J.; Harris, C.T.; Kodis, M.A.; Hollis, M.A.; Graves, C.A.; Mathews, R.H.;
Application of gated field emitter arrays in microwave amplifier tubes
1997 / IEEE / 0-7803-3990-8
By: Bandy, S.G.; Wintucky, E.G.; Goplen, B.; Palmer, D.; Hollis, M.A.; Spindt, C.A.; Green, M.C.;
Arrays Of Gated Field-emitter Cones Having 0.32-/spl mu/m Tip-to-tip Spacings
1993 / IEEE / 0-7803-0852-2
By: Rabe, S.; Harris, C.T.; Bozler, C.O.; Hollis, M.A.; Goodhue, W.D.; Rathman, D.D.;
Bright-field Analysis Of Field-emission Cones Using High-resolution Transmission Electron Microscopy
1993 / IEEE / 0-7803-0852-2
By: Nitishin, P.M.; Goodhue, W.D.; Hollis, M.A.; Johnson, G.D.; Rathman, D.D.; Bozler, C.O.; Harris, C.T.;
The Effect Of Space Charge On Vacuum Microtriode RF Performance
1993 / IEEE / 0-7803-0852-2
By: Murphy, R.A.; Hollis, M.A.; Rathman, D.D.;
Diamond Field-emission Cathodes
1993 / IEEE / 0-7803-0852-2
By: Kordesch, M.; Lyszczarz, T.M.; Uttaro, R.; Hollis, M.A.; Krohn, K.E.; Efremow, N.N.; Rathman, D.D.; Bozler, C.O.; Twichell, J.C.; Geis, M.W.;
Advanced Device Fabrication With Angled Chlorine Ion Beam Assisted Etching
1987 / IEEE
By: Goodhue, W.D.; Donnelly, J.P.; Hollis, M.A.; Pang, S.W.;
High Power-Added Efficiency Measured At 1.3 And 20 Ghz Using a GaAs Permeable Base Transistor*
1987 / IEEE
By: Nichols, K.B.; Murphy, R.A.; Rabe, S.; Vera, A.; Mathews, R.; Kushner, L.J.; Quddus, M.A.; Bozler, C.O.; Hollis, M.A.;
Application of gated field emitter arrays in microwave amplifier tubes
1998 / IEEE / 0-7803-5096-0
By: Goplen, B.; Palmer, W.D.; Hollis, M.A.; Spindt, C.A.; Green, M.C.; Bandy, S.G.; Wintucky, E.G.;
Resistive arc protection for field-emitter-array cold cathodes used in X-band inductive output amplifiers
1998 / IEEE / 0-7803-5096-0
By: Murphy, R.A.; Graves, C.A.; Harris, C.T.; Parameswaran, L.; Hollis, M.A.;
A Swept-Frequency Magnitude Method for the Dielectric Characterization of Chemical and Biological Systems
1980 / IEEE
By: Schaefer, D.J.; Allis, J.W.; Weil, C.M.; Blackman, C.F.; Hollis, M.A.;
Contributors July 1980
1980 / IEEE
By: Allis, J.W.; Ananasso, F.G.; Winkler, C.; Weil, C.M.; Archer, J.W.; Barber, P.W.; Begemann, G.; Blackman, C.F.; Caloccia, E.M.; Cap, F.; Cullen, A.L.; Dahele, J.S.; Deutsch, R.; Dragone, C.; Durney, C.H.; Dydyk, M.; Hinken, J.H.; Hoefer, W.J.R.; Hollis, M.A.; Iskander, M.F.; Itoh, T.; Karmel, P.R.; Knorr, J.B.; Kobayashi, M.; Koyano, Y.Y.; Kpodzo, E.; Lewis, J.E.; Love, J.D.; Marazzi, E.; Massoudi, H.; Nagao, T.; Papp, J.C.; Predmore, C.R.; Rizzoli, V.; Saleh, A.A.M.; Schaefer, D.J.; Schunemann, K.; Serna, R.; Shayda, P.M.; Yi-Chi Shih; Tanaka, Z.; Terakado, R.; Tranquilla, J.M.; Watanabe, R.;
VA-7 GaAs planar doped barrier transistors
1981 / IEEE
By: Malik, R.J.; Hollis, M.A.; Eastman, L.F.; Woodard, D.W.; Wood, C.E.C.; AuCoin, T.R.;
Noise in short n+-n--n+GaAs diodes
1982 / IEEE
By: van der Ziel, A.; Peczalski, A.; Hollis, M.A.;
Importance of electron scattering with coupled plasmon-optical phonon modes in GaAs planar-doped barrier transistors
1983 / IEEE
By: Hollis, M.A.; Smith, P.M.; Dandekar, N.V.; Eastman, L.F.; Palmateer, S.C.;
IIIA-7 GaAs permeable base transistors fabricated using organometallic chemical vapor deposition
1984 / IEEE
By: Nichols, K.B.; Gale, R.P.; Hollis, M.A.; Lincoln, G.A.; Bozler, C.O.;
18.5-dB Gain at 18 GHz with a GaAs permeable base transistor
1985 / IEEE
By: Vera, A.; Rabe, S.; Nichols, K.B.; Hollis, M.A.; Bozler, C.O.; Chen, C.L.;
Reproducible fabrication of high-performance GaAs permeable base transistors
1985 / IEEE
By: Piacentini, W.J.; Hollis, M.A.; Smith, P.M.; Bozler, C.O.; Nichols, K.B.; Rabe, S.; Gale, R.P.; Murphy, R.A.;
Small-signal gain performance of the permeable base transistor at EHF
1987 / IEEE
By: Nichols, K.B.; Clifton, B.J.; Hollis, M.A.; Chick, R.W.; Actis, R.; Bozler, C.O.;
Space-Charge Impedance in Photodiodes
2011 / IEEE
By: Hollis, M.A.;
High-saturation current uni-traveling-carrier waveguide photodiodes with variable optical confinement
2011 / IEEE / 978-1-55752-911-4
By: Hollis, M.A.; Madison, S.M.; Klamkin, J.; Juodawlkis, P.W.; Plant, J.J.; Oakley, D.C.; Caissie, J.M.; Missaggia, L.J.; Sheehan, M.; O'Donnell, F.J.; Napoleone, A.;

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