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Author: Hao-Hsiung Lin

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Extended X-ray absorption fine structure of InAsPSb
2011 / IEEE / 978-3-8007-3356-9
By: Chen-Jun Wu; Hao-Hsiung Lin; Zhe-Chuan Feng; Tsai, G.;
$\hbox{InGaP/GaAs}_{0.57}\hbox{P}_{0.28} \hbox{Sb}_{0.15}/\hbox{GaAs}$ Double HBT With Weakly Type-II Base/Collector Junction
2012 / IEEE
By: Hao-Hsiung Lin; Yu-Chung Chin; Chao-Hsing Huang;
Efficient generation of coherent acoustic phonons in (111) InGaAsGaAs multiple quantum wells through piezoelectric effects
2007 / American Institute of Physics
By: Yu-Chieh Wen; Li-Chang Chou; Hao-Hsiung Lin; Vitalyi Gusev; Kung-Hsuan Lin; Chi-Kuang Sun;
Opposite temperature effects of quantum-dot laser under dual-wavelength operation
2007 / American Institute of Physics
By: Hsueh-Shih Fan; Yi-Shin Su; Fei-Hung Chu; Fu-Yu Chang; Hao-Hsiung Lin; Ching-Fuh Lin;
Energy gap reduction in dilute nitride GaAsSbN
2008 / American Institute of Physics
By: Yan-Ting Lin; Ta-Chun Ma; Tsung-Yi Chen; Hao-Hsiung Lin;
GaAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer
2009 / American Institute of Physics
By: You-Ru Lin; Yi-Feng Lai; Chuan-Pu Liu; Hao-Hsiung Lin;
Band alignment of InAs1xSbx (0.05<x<0.13)/InAs0.67P0.23Sb0.10 heterostructures
2009 / American Institute of Physics
By: Chen-Jun Wu; Gene Tsai; Hao-Hsiung Lin;
Effect of thermal annealing on the blueshift of energy gap and nitrogen rearrangement in GaAsSbN
2010 / American Institute of Physics
By: Yan-Ting Lin; Ta-Chun Ma; Hao-Hsiung Lin; Jiun-De Wu; Ying-Sheng Huang;
Photoluminescence and photoreflectance study of annealing effects on GaAs0.909Sb0.07N0.021 layer grown by gas-source molecular beam epitaxy
2008 / American Institute of Physics
By: Hung-Pin Hsu; Yen-Neng Huang; Ying-Sheng Huang; Yang-Ting Lin; Ta-Chun Ma; Hao-Hsiung Lin; Kwong-Kau Tiong; Piotr Sitarek; Jan Misiewicz;
Photoluminescence of InAs0.04P0.67Sb0.29
2008 / American Institute of Physics
By: Gene Tsai; De-Lun Wang; Hao-Hsiung Lin;
Injection current model of a MOS diode under charge-sharing mode readout operation
1993 / IEEE
By: Hao-Hsiung Lin; Chao-Wen Wu;
Anisotropic two-photon transitions in GaAs/AlGaAs multiple quantum well waveguides
1993 / IEEE
By: Yang, C.C.; Hao-Hsiung Lin; Cheng-Hui Lin; Stegeman, G.I.; Villeneuve, A.;
Birefringence of passive multi-quantum-well semiconductor slab waveguides
1995 / IEEE
By: Day-Uei Li; Chao-Hsing Huang; Stegeman, G.I.; Jin Kang; Yang, C.C.; Hung-Chun Chang; Hao-Hsiung Lin;
An unified GSMBE growth model for GaInAsP on InP and GaAs
1996 / IEEE / 0-7803-3283-0
By: Tsuen-Lin Lee; Jin-Shung Liu; Hao-Hsiung Lin;
The incorporation behavior of As and P in GaInAsP(/spl lambda//spl ap/1.3 /spl mu/m) on InP grown by gas source molecular beam epitaxy
1995 / IEEE / 0-7803-2147-2
By: Jin-Shung Liu; Tsuen-Lin Lee; Hao-Hsiung Lin;
Pump-probe studies of carrier capture processes in semiconductor multiple-quantum-well waveguides
1997 / IEEE
By: Ming-Ching Chen; Yang, C.C.; Jiun-Haw Li; Chung-Yen Chao; Ding-Wei Huang; Jian-Jang Huang; Hao-Hsiung Lin;
A miniature MMIC double doubly balanced mixer using lumped dual balun for high dynamic receiver application
1997 / IEEE
By: Hao-Hsiung Lin; Hwain-Kaeo Chiou;
Lumped-element compensated high/low-pass balun design for MMIC double-balanced mixer
1997 / IEEE
By: Hao-Hsiung Lin; Hwann-Kaeo Chiou; Chi-Yang Chang;
On the recombination currents effect of heterostructure-emitter bipolar transistors (HEBTs)
1996 / IEEE / 0-7803-3374-8
By: Wei-Chou Wang; Shiou-Ying Cheng; Lih-Wen Laih; Jung-Hui Tsai; Po-Hung Lin; Wen-Chau Liu; Hao-Hsiung Lin; Jing-Yuh Chen;
Two-Dimensional Calculation on the Band-to-Band Tunneling Current of Iridium Antimonide Charge Injection Devices
1993 / IEEE / 0-7803-1225-2
By: Hao-Hsiung Lin; Chao-Wen Wu;
Photoluminescence study of the self-organized InAs/GaAs quantum dots grown by gas source molecular beam epitaxy
1998 / IEEE / 0-7503-0556-8
By: Ming-Chin Chen; Hao-Hsiung Lin;
Room-temperature 2.2-/spl mu/m InAs-InGaAs-InP highly strained multiquantum-well lasers grown by gas-source molecular beam epitaxy
1998 / IEEE
By: Hao-Hsiung Lin; Jyh-Shyang Wang; Li-Wei Sung;
Effects of conduction band discontinuity and two dimensional electron gas on the dc characteristics of InAlAs/InGaAs and InAlAs/InAlGaAs DHBT's
1994 / IEEE
By: Hao-Hsiung Lin; Tsuen-Lin Lee; Chao-Hsing Huang;
Gas source MBE growth of InP under In-rich conditions
1994 / IEEE
By: Hao-Hsiung Lin; Jin-Shang Liu; Tsuen-Lin Lee;
Growth and characterization of InAsN alloys
2000 / IEEE / 0-7803-6320-5
By: Jyh-Shyang Wang; Guan-Ru Chen; Li-Wei Sung; Hao-Hsiung Lin;
Bulk InAsN films grown by plasma-assisted gas source molecular beam epitaxy
2001 / IEEE / 0-7803-6700-6
By: Ding-Kang Shih; Hao-Hsiung Lin; Li-Wei Song; Tso-Yu Chu; Yang, R.;
(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P/In/sub 0.15/Ga/sub 0.85/As (x=0, 0. 3, 1. 0) heterostructure doped-channel FETs for microwave power applications
2001 / IEEE
By: Jenn-Ming Kuo; Hao-Hsiung Lin; Yi-Jen Chan; Hsien-Chin Chiu; Shih-Cheng Yang;
A fully integrated broadband amplifier with 161% 3-dB bandwidth
2001 / IEEE / 0-7803-7138-0
By: Huei Wang; Wen-Chieh Wu; Hao-Hsiung Lin;
Band gap reduction in InAsN alloy
2002 / IEEE / 0-7803-7320-0
By: Ding-Kang Shih; Hao-Hsiung Lin; Tso-Yu Chu;
Growth and characterization of low-threshold 1.3 /spl mu/m GaAsSb quantum well laser
2002 / IEEE / 0-7803-7500-9
By: Hao-Hsiung Lin; Min-Han Lee; Po-Wei Liu;
Effect of deposition method on the density of InAs/InGaAs quantum dot
2003 / IEEE / 0-7803-7704-4
By: Fu-Yu Chang; Hao-Hsiung Lin; Wu, T.C.;
Femtosecond carrier dynamics in InGaAsN single quantum well
2003 / IEEE / 0-7803-7766-4
By: Li-Wei Sung; Chi-Kuang Sun; Ming-Chun Tien; Tzu-Ming Liu; Chia-Lung Hsieh; Hao-Hsiung Lin;
GaAsSb/GaAs type-II quantum well and its application on /spl sim/1.3 /spl mu/m laser
2003 / IEEE / 0-7803-7887-3
By: Hao-Hsiung Lin; Jhe-Ren Chen; Po-Wei Liu;
High SCR design for one-transistor split-gate full-featured EEPROM
2004 / IEEE
By: Yung-Tao Lin; Hung-Cheng Sung; Chia-Ta Hsieh; Yu-Hsiung Wang; Hao-Hsiung Lin; Wen-Ting Chu; Wang, C.S.;
Using an ammonia treatment to improve the floating-gate spacing in split-gate flash memory
2004 / IEEE
By: Wang, C.S.; Chia-Shiung Tsai; Yung-Tao Lin; Hung-Cheng Sung; Wen-Ting Chu; Yu-Hsiung Wang; Yeur-Luen Tu; Hao-Hsiung Lin; Chia-Ta Hsieh;
Shrinkable triple self-aligned field-enhanced split-gate flash memory
2004 / IEEE
By: Chia-Ta Hsieh; Hao-Hsiung Lin; Wen-Ting Chu; Wang, C.S.; Yung-Tao Lin; Yu-Hsiung Wang; Hung-Cheng Sung;
InAs/InGaAs quantum dot laser with high ground-state modal gain grown by solid-source molecular-beam epitaxy
2004 / IEEE / 0-7803-8595-0
By: Fu-Yu Chang; Hao-Hsiung Lin; Gang-Hua Liao; Chi-Sen Lee;
Performance evaluation of field-enhanced P-channel split-gate flash memory
2005 / IEEE
By: Chia-Ta Hsieh; Yu-Hsiung Wang; Hao-Hsiung Lin; Wen-Ting Chu; Wang, C.S.; Yung-Tao Lin;
Growth of InAsSb/InAs MQW and InPSb by gas source molecular beam epitaxy
2005 / IEEE / 0-7803-8891-7
By: Hao-Hsiung Lin; Gene Tsai;
Incorporation Behaviors of Group V Elements in GaAsSbN Grown by Gas Source Molecular Beam Epitaxy
2007 / IEEE / 1-4244-0874-1
By: Li-Chang Chou; Tsung-Yi Chen; Yan-Ting Lin; Ta-Chun Ma; Hao-Hsiung Lin;
AlGaAs Ambient Light Detectors With a Human-Eye Spectral Response
2008 / IEEE
By: Ta-Chun Ma; Tzu-Chiang Lin; Hao-Hsiung Lin;
Origin of the annealing-induced blue-shift in GaAsSbN
2008 / IEEE / 978-1-4244-2258-6
By: Hao-Hsiung Lin; Tsung-Yi Chen; Ta-Chun Ma; Yan-Ting Lin;
GaAsSbN/GaAs long wavelength PIN detectors
2008 / IEEE / 978-1-4244-2258-6
By: Hao-Hsiung Lin; Yan-Ting Lin; Ta-Chun Ma; Chi-Kuang Chen;
$\hbox{In}_{0.46}\hbox{Ga}_{0.54}\hbox{P}_{0.98} \hbox{Sb}_{0.02}/\hbox{GaAs}$: Its Band Offset and Application to Heterojunction Bipolar Transistor
2010 / IEEE
By: Min-Nan Tseng; Chao-Hsing Huang; Hao-Hsiung Lin; Yu-Chung Chin;
The combination for thermodynamic model and precursor state used in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy
2010 / IEEE / 978-1-4244-5922-3
By: Jian-Ming Lin; Hao-Hsiung Lin; Li-Chang Chou;

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