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Author: Garbuzov, D.

Results

Peculiarities of operation characteristics of high-power InGaAsP/GaAs 0.8 /spl mu/m laser diodes
1994 / IEEE / 0-7803-1754-8
By: Kolev, E.; Erdtman, M.; Yi, H.; He, X.; Garbuzov, D.; Diaz, J.; Razeghi, M.; Eliashevich, I.; Wang, L.;
Broadened waveguide design for separate confinement quantum well lasers
1996 / IEEE / 0-7803-3160-5
By: Garbuzov, D.;
Very low internal loss, 1.5 /spl mu/m wavelength SCH-MQW InGaAsP/InP laser diodes with broadened-waveguides
1996 / IEEE / 0-7803-3160-5
By: Forrest, S.; Garbuzov, D.; Xu, L.; Connolly, J.; Martinelli, R.; Menna, R.;
Monolithic integration of an InGaAsP-InP MQW laser/waveguide using a twin-guide structure with a mode selection layer
1997 / IEEE
By: Studenkov, P.; Gokhale, M.R.; Xu, L.; Forrest, S.R.; Garbuzov, D.; Chao, C.-P.; Dries, J.C.;
Broadened waveguide, low loss 1.5 /spl mu/m InGaAsP/InP and 2 /spl mu/m InGaAsSb/AlGaAsSb laser diodes
1997 / IEEE / 0-7803-3898-7
By: Garbuzov, D.; Menna, R.; Lee, H.; Martinelli, R.; Connolly, J.C.; Xu, L.; Forrest, S.R.;
Monolithic integration of laser and waveguide using a twin-guide structure with absorption layer
1997 / IEEE / 0-7803-3898-7
By: Gokhale, M.; Studenkov, P.; Forrest, S.R.; Garbuzov, D.; Chao, C.-P.; Dries, J.C.; Xu, L.;
20 W Peak single-Transverse-mode output power from 100-/spl um/m aperture-broadened waveguide GRINSCH QW GaAs/AlGaAs(/spl lambda/=0.81/spl um/m)and SCHDQW InGaAs/InGaAsP(/spl lambda/=0.97/spl um/m laser diodes
1997 / IEEE / 0-7803-4125-2
By: Forrest, S.R.; Dries, C.; Botez, D.; Bhattacharya, A.; Mawst, L.J.; Connolly, J.C.; Martinelli, R.; Odubanjo, B.; Morris, N.; Garbuzov, D.;
2.0 - 2.4 /spl mu/m High-Power Broaden Waveguide SCH-QW InGaAsSb/AIGaAsSb Diode Lasers
1998 / IEEE / 0-7803-4233X
By: Garbuzov, D.; Lee, H.; Khalfin, V.; Martinelli, R.; Menna, R.; Connolly, J.;
11.5-W CW 1.83-�m diode laser array
1999 / IEEE
By: Khalfin, V.; Menna, R.; Maiorov, M.; Connolly, J.; Garbuzov, D.; Matarese, R.; Milgazo, H.;
Effect of p-doping on the performance of high power 1.5-/spl mu/m InGaAsP MQW lasers
2000 / IEEE / 0-7803-6320-5
By: Donetsky, D.; Trussell, W.; Belenky, G.; Shterengas, L.; Maiorov, M.; Menna, R.; Garbuzov, D.; Connolly, J.;
Effect of heterobarrier leakage on the performance of high power 1.5-/spl mu/m InGaAsP multiple quantum well lasers
2000 / IEEE / 0-7803-5947-X
By: Donetsky, D.; Menna, R.; Trussell, W.; Shterengas, L.; Belenky, G.; Garbuzov, D.; Connolly, J.;
Non-thermal saturation of P-I characteristics for InP- and GaSb-based broad-contact SCH-QW lasers
2000 / IEEE / 1-55752-634-6
By: Khalfin, V.; Martinelli, R.; Menna, R.; Maiorov, M.; Connolly, J.; Garbuzov, D.; Harvey, M.;
Waveguide collapse In InGaAsP ridge-waveguide lasers with weak lateral optical confinement
2001 / IEEE / 1-55752-662-1
By: Maiorov, M.; Komissarov, A.; Tsekoun, A.; Khalfin, V.; Menna, R.; Garbuzov, D.; Connolly, J.; Todorov, S.;
High power single spatial and longitudinal mode 1310 nm InGaAsP/InP lasers with 450 mW CW output power for telecommunication applications
2001 / IEEE / 0-7803-6705-7
By: Menna, R.; Garbuzov, D.; Connolly, J.; Todorov, S.; Komissarov, A.; Tsekoun, A.; Khalfin, V.; Maiorov, M.;
100 mW external cavity laser with a 1405-1575 nm tuning range
2002 / IEEE / 1-55752-706-7
By: Maiorov, M.; Kudryashov, I.; Morris, N.; Komissarav, A.; Connolly, J.; Alphonse, G.; Braun, A.; Khalfin, V.; Garbuzov, D.;
14xx nm DFB InGaAsP/InP pump lasers with 500 mW CW output power for WDM combining
2002 / IEEE / 1-55752-701-6
By: Maiorov, M.; Roff, W.; Tsekoun, A.; Komissarov, A.; Menna, R.; Kudryashov, I.; Garbuzov, D.; Connolly, J.; Lunev, A.;
Gain, loss and /spl alpha/-factor in 2.5-/spl mu/m In(Al)GaAsSb/GaSb Type-I QW lasers with 1W CW output power
2002 / IEEE / 0-7803-7598-X
By: Kim, J.G.; Belenky, G.; Garbuzov, D.; Martinelli, R.U.; Shterengas, L.;
High power Raman pumps based on ridge waveguide InGaAsP/InP diode lasers
2003 / IEEE / 1-55752-746-6
By: Maiorov, M.; Kudryashov, I.; Komissar, A.; Garbuzov, D.; Connolly, J.; Roff, R.;
Spectral and noise characteristics of Fabry-perot and DFB 14xx nm InGaAs/InP pump lasers for Raman and Er-doped fiber amplifiers
2003 / IEEE / 1-55752-746-6
By: Kudryashov, I.; Komissarov, A.; Maiorov, M.; Garbuzov, D.; Connolly, J.; Lunev, A.;
Efficiency and threshold analysis of resonantly diode-laser-pumped 1.6-/spl mu/m Er:YAG laser
2005 / IEEE / 1-55752-795-4
By: Kudryashov, I.; Garbuzov, D.; Dubinskii, M.;
Analysis of the Gated IPACT Scheme for EPONs
2006 / IEEE / 1-4244-0355-3
By: Bartos, R.; Garbuzov, D.; Bhatia, S.;

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