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Author: Feng, M.

Results

Transistor Laser Power Stabilization Using Direct Collector Current Feedback Control

2012 / IEEE
By: Iverson, E.W.; Feng, M.;

Surface Emission Vertical Cavity Transistor Laser

2012 / IEEE
By: Holonyak, N.; Feng, M.; Mong-Kai Wu;

The study of FG formation for nano-scale NAND flash memory cells

2011 / IEEE / 978-1-4577-1647-8
By: Feng, M.;

Quantum Algorithms and Mathematical Formulations of Biomolecular Solutions of the Vertex Cover Problem in the Finite-Dimensional Hilbert Space

2015 / IEEE
By: Feng, M.; Ren, T.-T.; Chang, W.-L.;

Single Quantum-Well Transistor Lasers Operating Error-Free at 22 Gb/s

2015 / IEEE
By: Tan, F.; Wang, C.Y.; Bambery, R.; Holonyak, N.; Feng, M.;

Ultraprecise Resonance Wavelength Determination for Optofluidic Sensing Applications

2015 / IEEE
By: Liu, T.; Zhang, X.; Chen, W.; Liu, W.; Feng, M.; Yu, Z.; Liu, K.; Jiang, J.;

Highest Degree Likelihood Search Algorithm Using a State Transition Matrix for Complex Networks

2014 / IEEE
By: Yi, Z.; Qu, H.; Feng, M.;

780 nm Oxide-Confined VCSEL With 13.5 Gb/s Error-Free Data Transmission

2014 / IEEE
By: Feng, M.; Bambery, R.; Tan, F.; Wu, M.-K.; Liu, M.; Holonyak, N.;

Low Power Operation of a Vertical Cavity Transistor Laser via the Reduction of Collector Offset Voltage

2014 / IEEE
By: Bambery, R.; Liu, M.; Wu, M.; Holonyak, N.; Feng, M.;

Imperfect CSI-Based Joint Resource Allocation in Multirelay OFDMA Networks

2014 / IEEE
By: Su, Q.; Wang, J.; Wang, J.; Jiang, B.; Chen, M.; Feng, M.; Wang, J.;

Transistor Laser With 13.5-Gb/s Error-Free Data Transmission

2014 / IEEE
By: Holonyak, N.; Feng, M.; Bambery, R.; Tan, F.;

Full functionality of LSI gate arrays fabricated on 3-in-diameter, MOCVD-grown GaAs-on-silicon substrates

1988 / IEEE
By: White, T.; McIntyre, D.; Ito, C.; Kim, H.B.; Kaliski, R.; Schoendube, R.; Feng, M.;

0.25- mu m gate millimeter-wave ion-implanted GaAs MESFETs

1989 / IEEE
By: Lepkowski, T.R.; Ito, C.; Lau, C.L.; Feng, M.; Wang, G.W.;

Ultrahigh-frequency performance of submicrometer-gate ion-implanted GaAs MESFETs

1989 / IEEE
By: Lau, C.L.; Feng, M.; Wang, G.W.; Lepkowski, T.R.; Ito, C.;

Ion-implanted GaAs/AlGaAs heterojunction FET's grown by MOCVD

1989 / IEEE
By: Wang, G.W.; Ito, C.; Lau, C.L.; Kaliski, R.; Liaw, Y.P.; Feng, M.;

Quarter-micrometer gate ion-implanted GaAs MESFET's with an f/sub 1/ of 126 GHz

1989 / IEEE
By: Feng, M.; Wang, G.W.;

High-performance millimeter-wave ion-implanted GaAs MESFETs

1989 / IEEE
By: Lau, C.L.; Feng, M.; Wang, G.W.; Lepkowski, T.R.; Ito, C.;

Half-micrometer gate-length ion-implanted GaAs MESFET with 0.8-dB noise figure at 16 GHz

1989 / IEEE
By: Lau, C.L.; Ito, C.; Chang, Y.; Wang, G.W.; Lepkowski, T.R.; Feng, M.;

MMIC phase shifters and amplifiers for millimeter-wavelength active arrays

1989 / IEEE
By: Sy, O.A.; Hodges, N.E.; Dunn, V.E.; Chang, Y.C.; Feng, M.; Alyassini, W.;

Millimeter-wave ion-implanted graded In/sub x/Ga/sub 1-x/As MESFETs grown by MOCVD

1989 / IEEE
By: Feng, M.; Wang, G.W.; Ito, C.; Lau, C.; Liaw, Y.P.; Kaliski, R.;

Heterojunction ion-implanted FETs (HIFETs)

1989 / IEEE
By: Ito, C.; Chang, Y.; Lau, C.L.; Kaliski, R.; Liaw, Y.P.; Feng, M.; Wang, G.W.;

60-GHz power performance of ion-implanted In/sub x/Ga/sub (1-x/)As/GaAs MESFETs

1990 / IEEE
By: Schellenberg, J.M.; Brusenback, P.; Lepkowski, T.R.; Lau, C.L.; Feng, M.;

An experimental determination of electron drift velocity in 0.5- mu m gate-length ion-implanted GaAs MESFET's

1991 / IEEE
By: Lau, C.L.; Feng, M.; Eu, V.;

60-GHz noise performance of ion-implanted In/sub x/Ga/sub 1-x/As MESFET's

1991 / IEEE
By: Ito, C.; Hwang, T.; Lepkowski, T.; Brusen, P.; Schellenberg, J.; Feng, M.; Lau, C.L.;

Mixed technology of ion implantation and heteroepitaxy: ion-implanted In/sub x/Ga/sub 1-x/As/GaAs MESFETs

1989 / IEEE
By: Ito, C.; Lau, C.L.; Liaw, Y.P.; Kaliski, R.; Feng, M.; Wang, G.W.;

W-band oscillator using ion-implanted InGaAs MESFETs

1991 / IEEE
By: Brusenback, P.; Feng, M.; Lau, C.L.; Schellenberg, J.M.;

A technique for correction of parasitic capacitance on microwave f/sub t/ measurements of MESFET and HEMT devices

1991 / IEEE
By: Ito, C.; Lau, C.L.; Feng, M.;

44 GHz hybrid low noise amplifiers using ion-implanted In/sub x/Ga/sub 1-x/As MESFETs

1990 / IEEE
By: Lau, C.L.; Schellenberg, J.; Hodges, N.; Dunn, V.; Ito, C.; Chang, Y.; Lepkowski, T.; Wang, G.W.; Feng, M.;

Ion-implanted In/sub (x)/Ga/sub (1-x)/As MESFET's on GaAs substrate for low-cost millimeter-wave IC application

1992 / IEEE
By: Feng, M.; Lau, C.-L.;

Ultra low-noise performance of 0.15-micron gate GaAs MESFET's made by direct ion implantation for low-cost MMIC's applications

1992 / IEEE
By: Feng, M.; Neidhard, R.; Kruse, J.; Laskar, J.;

Millimeter-wave power performance of ion-implanted In/sub x/Ga/sub (1-x)/As on GaAs metal semiconductor field-effect transistors

1992 / IEEE
By: Feng, M.; Kushner, L.J.; Brusenback, P.; Lau, C.L.;

Cryogenic small-signal model for 0.55 mu m gate-length ion-implanted GaAs MESFET's

1992 / IEEE
By: Kruse, J.; Laskar, J.; Feng, M.;

Cryogenic microwave performance of 0.5- mu m InGaAs MESFET's

1992 / IEEE
By: Laskar, J.; Maranowski, S.; Kolodzey, J.; Feng, M.;

Super-low-noise performance of direct-ion-implanted 0.25- mu m-gate GaAs MESFET's

1992 / IEEE
By: Kruse, J.; Laskar, J.; Feng, M.;

High speed cryogenic operation of sub-micron pseudomorphic InGaAs/GaAs FETs

1991 / IEEE / 0-7803-0491-8
By: Kolodzey, J.; Feng, M.; Adesida, I.; Ketterson, A.; Kruse, J.; Maranowski, S.; Laskar, J.;

Millimeter wave monolithic IC's using direct ion implantation in to GaAs LEC substrates

1990 / IEEE
By: Hwang, T.; Feng, M.; Lau, C.L.; Hodges, N.; Dunn, V.; Ito, C.; Lepkowski, T.;

High drain current-voltage product of submicrometer-gate ion-implanted GaAs MESFET's for millimeter-wave operation

1992 / IEEE
By: Hwang, T.; Feng, M.;

Continuous speech recognition results of the BYBLOS system on the DARPA 1000-word resource management database

1988 / IEEE
By: Rohlicek, J.; Price, P.; Makhoul, J.; Feng, M.; Kimball, O.; Roucos, S.; Derr, A.; Chow, Y.; Kubala, F.; Vandegrift, J.; Schwartz, R.;

11 GHz bandwidth optical integrated receivers using GaAs MESFET and MSM technology

1993 / IEEE
By: Feng, M.; Apostolakis, P.J.; Middleton, J.R.; Chang, W.H.; Shih, C.G.; Wang, J.S.;

Temperature-dependent bit-error-rate characterization of ultralow-noise GaAs MESFET's for 3-Gb/s operation

1993 / IEEE
By: Laskar, J.; Kruse, J.; Feng, M.;

Gate current in AlInAs/GaInAs heterostructure insulated-gate field-effect transistors (HIGFETs)

1993 / IEEE
By: Feng, M.; Ishikawa, H.; Kamada, M.;

Thin film Ba/sub 0.6/K/sub 0.4/BiO/sub 3/ microwave devices

1993 / IEEE
By: Feng, M.; Laskar, J.; Kruse, J.; Van Harlingen, D.J.; Schweinfurth, R.A.; Teepe, M.R.; Platt, C.E.;

Microwave performance of low-power ion-implanted 0.25-micron gate GaAs MESFET for low-cost MMIC's applications

1993 / IEEE
By: Middleton, J.; Apostolakis, P.J.; Lepore, A.N.; Feng, M.; Barlage, D.; Scherrer, D.; Kruse, J.;

Low-power performance of 0.5- mu m JFET for low-cost MMIC's in personal communications

1993 / IEEE
By: Kasahara, J.; Takano, C.; Wada, M.; Feng, M.; Laskar, J.; Kruse, J.; Scherrer, D.;

On the speed and noise performance of direct ion-implanted GaAs MESFETs

1993 / IEEE
By: Feng, M.; Laskar, J.;

Comment on "On the speed and noise performance of direct ion-implanted GaAs MESFET's" [with reply]

1994 / IEEE
By: Moll, N.; Laskar, J.; Feng, M.;

11 GHz bandwidth GaAs MESFET/MSM OEIC receivers

1993 / IEEE / 0-7803-1209-0
By: Apostolakis, P.J.; Middleton, J.; Chang, W.H.; Shih, C.G.; Wang, J.S.; Feng, M.;

Low noise device and amplifier characterization for deep space communication applications

1993 / IEEE / 0-7803-1209-0
By: Bautista, J.J.; Laskar, J.; Feng, M.; Scherrer, D.; Fujiwara, B.;

Noise performance of low power 0.25 micron gate ion implanted D-mode GaAs MESFET for wireless applications

1994 / IEEE
By: Scherrer, D.; Middleton, J.R.; Apostolakis, P.J.; Lepore, A.N.; Feng, M.;

NMR microspectroscopy using 100 /spl mu/m planar RF coils fabricated on gallium arsenide substrates

1994 / IEEE
By: Feng, M.; Kruse, J.; Magin, R.L.; Peck, T.L.;

Optimal noise matching of 0.25 micron gate GaAs MESFETs for low power personal communications receiver circuit designs

1994 / IEEE / 0-7803-1778-5
By: Apostolakis, P.J.; Scherrer, D.; Feng, M.; Kruse, J.; Middleton, J.;

Design and fabrication of 5 Gb/s fully integrated OEIC receivers using direct ion implanted GaAs MESFET-MSM

1994 / IEEE / 0-7803-1778-5
By: Shih, C.-G.; Feng, M.; Wang, J.-S.; Barlage, D.;

Temperature dependence study of two-dimensional electron gas effect on the noise performance of high frequency field effect transistors

1995 / IEEE
By: Apostolakis, P.J.; Kruse, J.; Scherrer, D.; Feng, M.; Middleton, J.R.;

Ka-band monolithic low-noise amplifier using direct ion-implanted GaAs MESFETs

1995 / IEEE
By: Apostolakis, P.J.; Scherrer, D.R.; Feng, M.; Oliver, J.D., Jr.; Lautenvasser, B.D.; McPartlin, M.J.; Middleton, J.R.;

Monolithic gallium arsenide receiver for NMR microscopy

1994 / IEEE / 0-7803-2050-6
By: Magin, R.L.; Kruse, J.; Feng, M.; Franke, S.J.; Peck, T.L.;

Temperature dependent study of carbon-doped InP/InGaAs HBT's

1996 / IEEE
By: Feng, M.; Scherrer, D.; Mares, P.J.; Kruse, J.; Stillman, G.E.;

High-speed, low-noise InGaP/GaAs heterojunction bipolar transistors

1995 / IEEE
By: Feng, M.; Hartmann, Q.J.; Mares, P.J.; Ahmari, D.A.; Fresina, M.T.; Stillman, G.E.;

Scattering parameter and bit error rate characterization of high temperature superconducting coplanar transmission lines

1995 / IEEE
By: Forse, R.; Cardona, A.; Scharen, M.; Feng, M.; Kruse, J.; Scherrer, D.; Chang, W.H.; Gao, F.;

High-speed InGaP/GaAs HBTs with a strained In/sub x/Ga/sub 1-x/As base

1996 / IEEE
By: Feng, M.; Mares, P.J.; Barlage, D.W.; Hartmann, Q.J.; Fresina, M.T.; Ahmari, D.A.; Stillman, G.E.;

Growth and characterization of high-speed InP/InGaAs bipolar transistors using n/sup +/-InP contacting layers

1996 / IEEE / 0-7803-3283-0
By: Barlage, D.W.; Ahmari, D.A.; Fresina, M.T.; Martino, C.A.; Chang, W.-H.; Thomas, S.; Stillman, G.E.; Feng, M.;

Carbon-doped HBTs for OEICs

1995 / IEEE / 0-7803-3062-5
By: Ahmari, D.A.; Hartmann, Q.J.; Fresina, M.A.; Feng, M.; Mares, P.J.; Jackson, S.L.; Stillman, G.E.; Stockman, S.A.; Thomas, S.;

Temperature dependent study of the microwave performance of 0.25-/spl mu/m gate GaAs MESFETs and GaAs pseudomorphic HEMTs

1996 / IEEE
By: Scherrer, D.R.; Feng, M.; Kruse, J.W.; Apostolakis, P.J.;

High temperature superconducting resonators and switches: design, fabrication, and characterization

1996 / IEEE
By: Forse, R.; Cardona, A.; Scharen, M.; Lithgow, R.; Remillard, S.; Feng, M.; Jianshi Wang; Heins, M.; Kruse, J.; Zhongmin Zhou; Gao, F.;

Design and fabrication of a 1 Gb/s OEIC receiver for fiber-optic data link applications

1996 / IEEE
By: Chian-Gauh Shih; Feng, M.; Chih-Chong Teng; Barlage, D.W.; Jianshi Wang; Wei-Heng Chang;

Process integration and optimization of GaAs MESFET and MSM based opto-electronics integrated circuit (OEIC) using statistical experimental design techniques

1995 / IEEE / 0-7803-2996-1
By: Middleton, J.R.; Teng, C.C.; Wang, J.S.; Feng, M.;

Low cost millimeter-wave monolithic integrated circuits using direct ion implanted GaAs MESFETs

1995 / IEEE / 0-7803-2966-X
By: Middleton, J.R.; Apostolakis, P.J.; Scherrer, D.R.; Feng, M.; Oliver, J.D., Jr.; Lauterwasser, B.D.; McPartlin, M.J.;

InGaP/GaAs HBT with novel layer structure for emitter ledge fabrication

1996 / IEEE / 0-7803-3393-4
By: Ahmari, D.A.; Thomas, S.; Hartmann, Q.J.; Fresina, M.T.; Stillman, G.E.; Feng, M.; Caruth, D.;

Development of an integrated detector for NMR microscopy

1995 / IEEE / 0-7803-2475-7
By: Franke, S.J.; Peck, T.L.; Stocker, J.E.; Magin, R.L.; Feng, M.; Kruse, J.;

Low phase noise Ka-band VCOs using InGaP/GaAs HBTs and coplanar waveguide

1997 / IEEE / 0-7803-4063-9
By: Barlage, D.W.; Heins, M.S.; Feng, M.; Stillman, G.E.; Hartmann, Q.J.; Ahmari, D.A.; Fresina, M.T.;

Effects of annealing on the performance of InP/lnGaAs HBTs grown by LP-MOCVD

1997 / IEEE / 0-7803-3898-7
By: Fresina, M.T.; Hartmann, Q.J.; Stillman, G.E.; Feng, M.; Yung, A.; Hwangbo, H.; Barlage, D.; Baker, J.E.; Stockman, S.A.; Ahmari, D.A.;

Accurate passive component models in coplanar waveguide for 50 GHz MMICs

1997 / IEEE / 0-7803-3814-6
By: Caruth, D.; Scherrer, D.; Shimon, R.; Feng, M.; Hsia, H.; Middleton, I.;

Low phase noise Ka-band VCOs using InGaP/GaAs HBTs and coplanar waveguide

1997 / IEEE / 0-7803-3814-6
By: Stillman, G.E.; Hartmann, Q.J.; Ahmari, D.A.; Fresina, M.T.; Barlage, D.W.; Heins, M.S.; Feng, M.;

Nanoliter volume, high-resolution NMR microspectroscopy using a 60-/spl mu/m planar microcoil

1997 / IEEE
By: Feng, M.; Webb, A.G.; Peck, T.L.; Stocker, J.E.; Magin, R.L.;

InGaP/GaAs heterojunction bipolar transistor grown on a semi-insulating InGaP buffer layer

1997 / IEEE
By: Fresina, M.T.; Ahmari, D.A.; Stillman, G.E.; Feng, M.; Barlage, D.W.; Hartmann, Q.J.;

Low cost coplanar 77 GHz single-balanced mixer using ion-implanted GaAs Schottky diodes

1998 / IEEE / 0-7803-4471-5
By: Shimon, R.; Caruth, D.; Middleton, J.; Hsia, H.; Feng, M.;

Real space transfer noise of GaAs p-HEMTs

1998 / IEEE / 0-7503-0556-8
By: Caruth, D.; Feng, M.; Fendrich, J.A.; Hsia, S.K.;

Ultra low power (<2 mW) noise performance of InGaP/GaAs HBT

1998 / IEEE / 0-7503-0556-8
By: Heins, M.S.; Barlage, D.W.; Feng, M.; Stillman, G.E.; Hartman, Q.J.; Ahmari, D.A.; Fresina, M.T.; Mu, J.H.;

Redshifting and broadening of quantum-well infrared photodetector's response via impurity-free vacancy disordering

1998 / IEEE
By: Gunapala, S.; Feng, M.; Shun Lien Chuang; Yia-Chung Chang; Kwong-Chi Hseih; Apostolakis, P.; Malin, J.; Weich Fang; Sangsig Kim; Jandhyala, V.; Sengupta, D.; Stillman, G.; Bandara, S.; Michielssen, E.;

Blind source separation for communication signals using antenna arrays

1998 / IEEE / 0-7803-5106-1
By: Feng, M.; Kammeyer, K.-D.;

Temperature dependence of InGaP/GaAs heterojunction bipolar transistor DC and small-signal behavior

1999 / IEEE
By: Hattendorf, M.L.; Hartmann, Q.J.; Raghavan, G.; Ahmari, D.A.; Stillman, G.E.; Feng, M.;

Direct ion-implanted 0.12 �m GaAs MESFET with f/sub t/ of 121 GHz and f/sub max/ of 160 GHz

1999 / IEEE
By: Feng, M.; Becher, D.; Caruth, D.; Tang, Z.; Hsia, H.;

Exact noise parameters of lossy transmission lines

1999 / IEEE / 0-7803-5135-5
By: Shimon, R.; Feng, M.;

W-band InGaP/GaAs HBT MMIC frequency sources

1999 / IEEE / 0-7803-5135-5
By: Stillman, G.E.; Hattendorf, M.; Yang, Q.; Scott, D.; Feng, M.; Mu, J.; Fendrich, J.A.; Juneja, T.; Heins, M.S.;

Low actuation voltage RF MEMS switches with signal frequencies from 0.25 GHz to 40 GHz

1999 / IEEE / 0-7803-5410-9
By: Feng, M.; Shyh-Chiang Shen;

Low-power decimation filters for oversampling ADCs via the decorrelating (DECOR) transform

2000 / IEEE / 0-7803-5482-6
By: Shanbhag, N.R.; Dongwon See; Feng, M.;

A 14 bit, 1 GS/s digital-to-analog converter with improved dynamic performances

2000 / IEEE / 0-7803-5482-6
By: Feng, M.; Weil, A.; Dongwon Seo;

A very wide-band 14 bit, 1 GS/s track-and-hold amplifier

2000 / IEEE / 0-7803-5482-6
By: Feng, M.; Weil, A.; Dongwon Seo;

Low-cost 38 and 77 GHz CPW MMICs using ion-implanted GaAs MESFETs

2000 / IEEE / 0-7803-5687-X
By: Feng, M.; Heins, M.S.; Shimon, R.L.; Caruth, D.C.; Hsia, H.; Huang, J.J.; Becher, D.; Shen, S.C.; Tang, Z.;

Impact of 1/f noise in Ka-band InGaP/GaAs HBT frequency sources

2000 / IEEE / 0-7803-5687-X
By: Hein, M.S.; Heins, M.S.; Feng, M.; Hattendorf, M.; Caruth, D.; Juneja, T.;

Broadband low actuation voltage RF MEM switches

2000 / IEEE / 0-7803-5968-2
By: Caruth, D.; Shyf-Chiang Shen; Feng, M.;

Selective area growth and characterization of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition

2001 / IEEE
By: Dupuis, R.D.; Feng, M.; Benarama, M.; Liliental-Weber, Z.; Kwon, H.K.; Lambert, D.J.H.; Ting Gang Zhu; Chowdhury, U.; Wong, M.M.; Jian Jang Huang; Shelton, B.S.;

Method to determine intrinsic and extrinsic base-collector capacitance of HBTs directly from bias-dependent S-parameter data

2001 / IEEE
By: Hattendorf, M.; Feng, M.; Yang, Q.; Scott, D.;

Piecewise Lyapunov stability conditions of fuzzy systems

2001 / IEEE
By: Harris, C.J.; Feng, M.;

Temperature dependent common emitter current gain and collector-emitter offset voltage study in AlGaN/GaN heterojunction bipolar transistors

2001 / IEEE
By: Kwon, H.K.; Zhu, T.G.; Chowdhury, U.; Wong, M.M.; Shelton, B.S.; Dupuis, R.D.; Feng, M.; Hattendorf, M.; Huang, J.J.; Lambert, D.J.H.;

A 40 Gb/s integrated differential PIN+TIA with DC offset control using InP SHBT technology

2002 / IEEE / 0-7803-7447-9
By: Shen, S.C.; Caruth, D.; Schutt-Aine, J.; Feng, M.; Chan, D.;

A 60 GHz GaAs FET Amplifier

1983 / IEEE
By: Yamasaki, H.; Hackett, L.H.; Schellenberg, J.M.; Watkins, E.T.; Feng, M.;

Submicron InP-InGaAs single heterojunction bipolar transistors with f/sub T/ of 377 GHz

2003 / IEEE
By: Hafez, W.; Feng, M.; Jie-Wei Lai;

Low-power high-speed operation of submicron InP-InGaAs SHBTs at 1 mA

2003 / IEEE
By: Feng, M.; Jie-Wei Lai; Hafez, W.;

Vertical scaling of 0.25-�m emitter InP/InGaAs single heterojunction bipolar transistors with f/sub T/ of 452 GHz

2003 / IEEE
By: Hafez, W.; Jie-Wei Lai; Feng, M.;

Submicron scaling InP/InGaAs single heterojunction bipolar transistor technology with f/sub T/ > 400 GHz for >100 GHz applications

2003 / IEEE / 0-7803-7833-4
By: Chuang, Y.J.; Chan, R.; Hafez, W.; Lai, J.W.; Feng, M.; Caruth, D.;

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