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Author: Dohler, G.H.

Results

Polarization-insensitive high-contrast GaAs/AlGaAs waveguide modulator based on the Franz-Keldysh effect
1993 / IEEE
By: Linder, N.; Dankowski, S.; Kneissl, M.; Kiesel, P.; Knupfer, B.; Dohler, G.H.; Weimann, G.;
Linearity of double heterostructure electroabsorptive waveguide modulators
1995 / IEEE
By: Kneissl, M.; Kiesel, P.; Linder, N.; Trankle, G.; Dohler, G.H.; Quassowski, S.; Knupfer, B.;
Low-voltage high-contrast n-i-p-i-based waveguide modulators with alloyed selective contacts
1996 / IEEE
By: Kiesel, P.; Kneissl, M.; Windisch, R.; Dohler, G.H.; Knupfer, B.;
Monolithic waveguide-based smart pixel operating at 120 Mb/s
1997 / IEEE
By: Kiesel, P.; Hilburger, U.; Welker, M.; Dankowski, S.U.; Kneissl, M.; Muller, N.; Knupfer, B.; Dohler, G.H.;
Low Voltage High Contrast N-I-P-I Based Waveguide Modulator
1996 / IEEE / 0-7803-3169-9
By: Windisch, R.; Dohler, G.H.; Kiesel, P.; Kneissl, M.;
Field screening and bandfilling effects in low temperature GaAs MSM structures observed by differential transmission experiments
1997 / IEEE / 0-7803-4125-2
By: Dankowski, S.U.; Dohler, G.H.; Keil, U.D.; Seichter, H.; Hilburger, U.; Streb, D.; Ruff, M.; Tautz, S.; Kiesel, P.;
Polarization-sensitive optoelectronic switches based on ordered GalnP
1997 / IEEE / 0-7803-4125-2
By: Schmiedel, G.; Kiesel, P.; Dohler, G.H.; Moser, M.; GuIden, K.H.; Greger, E.; Kippenberg, T.;
Fast low-power optical nonlinearities of n-i-p-i and hetero n-i-p-i superlattice devices
1997 / IEEE / 0-7803-3895-2
By: Dohler, G.H.; Seilmaier, A.; Hauenstein, H.; Welker, M.; Knupfer, B.; Streb, D.; Malzer, S.; Kiesel, P.;
Waveguide modulators based on the Franz-Keldysh effect with linear transmission-voltage characteristics
1994 / IEEE / 0-7803-1789-0
By: ankowski, S.U.; Kiesel, P.; Dohler, G.H.; Riel, P.; Kneissl, M.; Quassowski, S.; Knupfer, B.; Linder, N.;
Refractive index changes of low temperature grown GaAs depending on its annealing history
1994 / IEEE / 0-7803-1789-0
By: Keil, U.D.; Kiesel, P.; Kneissl, M.; Knupfer, B.; Kopf, R.F.; Dohler, G.H.; Dykaar, D.R.; Dankowski, S.U.;
Isotype heterojunctions with flat valence or conduction band
1997 / IEEE
By: Dohler, G.H.; Babic, D.I.; Hu, E.L.; Bowers, J.E.;
Novel smart pixels composed of a photoconductive switch and a VCSEL
1997 / IEEE / 0-7803-3895-2
By: Dohler, G.H.; Malzer, S.; Knupfer, B.; Welker, M.; Riel, P.; Moser, M.; Gulden, K.H.;
Differential transmission measurements on low-temperature-grown GaAs transmission lines with spatially separated pump and probe beams
1998 / IEEE / 1-55752-339-0
By: Keil, U.D.; Seichter, H.; Kiesel, P.; Dankowski, S.U.; Krause, M.; Tautz, S.; Dohler, G.H.;
High-contrast polarization switches with a sensitivity of 3-dB/degree based on ordered GaInP
1998 / IEEE / 1-55752-339-0
By: Moser, M.; Greger, E.; Krauss, J.; Kippenberg, T.; Kiesel, P.; Dohler, G.H.;
Polarization Threshold Switches Based On Ordered GaInP
1998 / IEEE / 0-7803-4233X
By: Kraub, J.; Kippenberg, T.; Kiesel, P.; Dohler, G.H.;
Planar Monolithic Integration of a Photoconductive Switch and a nipi-Modulator into a Smart Pixel for Opto-Optical Switching
1998 / IEEE / 0-7803-4233X
By: Fix, W.; Oehler, C.; Knupfer, B.; Geibelbrecht, W.; Dohler, G.H.; Velling, P.; Prost, W.; Tegude, F.-J.;
An Active Smart Pixel with Low Optical Input Energy, High Contrast and High Switching Speed
1998 / IEEE / 0-7803-4233X
By: Welker, M.; Knupfer, B.; Oehler, C.; Geibelbrecht, W.; Dohler, G.H.; Jung, C.; Ebeling, K.-J.; Wiedenmann, D.;
New all-optical pump-and-probe technique for the investigation of the ambipolar in-plane diffusion in n-i-p-i doping superlattices
1998 / IEEE / 0-7803-4909-1
By: Streb, D.; Vitzcthum, M.; Dohler, G.H.; Kneissl, M.; Kiesel, P.;
Dynamics Of The Electroabsorption In MSM-Modulators based on Low Temperature Grown GaAs
1997 / IEEE / 4-88552-187-4
By: Dankowski, S.U.; Krause, M.; Dohler, G.H.; Seichter, H.; Keil, U.D.; Tautz, S.; Kiesel, P.;
31% absolute external quantum efficiency 850-nm LEDs and their modulation behavior
1998 / IEEE / 0-7803-4774-9
By: Heremans, P.; Windisch, R.; Borghs, G.; Dohler, G.H.; Dutta, B.; Knobloch, A.; Potemans, J.;
Intensity independent bistable polarization switch based on ordered GaInP
1999 / IEEE
By: Kippenberg, T.; Dohler, G.H.; Moser, M.; Greger, E.; Kiesel, P.; Spieler, J.; Krauss, J.;
Light-emitting diodes with 17% external quantum efficiency at 622 Mb/s for high-bandwidth parallel short-distance optical interconnects
1999 / IEEE
By: Borghs, G.; Dohler, G.H.; Dutta, B.; Potemans, J.; Knobloch, A.; Windisch, R.H.; Heremans, P.L.;
A monolithically integrated smart pixel based on a photoconductive switch and a n-i-p-i modulator
1999 / IEEE / 1-55752-595-1
By: Velling, P.; Dohler, G.H.; Kiesel, P.; Geisselbrecht, W.; Prost, W.; Fix, W.; Welker, M.; Tegude, F.-J.;
40% efficient thin-film surface-textured light-emitting diodes by optimization of natural lithography
2000 / IEEE
By: Knobloch, A.; Kuijk, M.; Dutta, B.; Windisch, R.; Heremans, P.; Meinlschmidt, S.; Dohler, G.H.; Borghs, G.; Kiesel, P.; Schoberth, S.;
Polarization dependence of the electroabsorption in ordered GaInP
1996 / IEEE / 1-55752-443-2
By: Kiesel, P.; Dohler, G.H.; Moser, M.; Gulden, K.H.; Greger, E.; Schmiedel, G.;
Large-signal-modulation of high-efficiency light-emitting diodes for optical communication
2000 / IEEE
By: Heremans, P.; Dohler, G.H.; Borghs, G.; Kiesel, P.; Windisch, R.; Dutta, B.; Rooman, C.; Kuijk, M.; Knobloch, A.;
Characterization of defects in LT-GaAs using a novel method based on thin LT-layers incorporated into pin diodes
2000 / IEEE / 0-7803-5814-7
By: Malzer, S.; Steen, C.; Kramer, S.; Pfeiffer, K.-F.; Tautz, S.; Kiesel, P.; Dohler, G.H.;
Light-extraction mechanisms in high-efficiency surface-textured light-emitting diodes
2002 / IEEE
By: Dutta, B.; Rooman, C.; Windisch, R.; Heremans, P.; Dohler, G.H.; Borghs, G.; Knobloch, A.;
MOVPE growth and polarisation dependence of (dis-)ordered InGaAsP PIN diodes for optical fibre applications
2002 / IEEE / 0-7803-7320-0
By: Kiesel, P.; Blache, R.; Spieler, J.; Neumann, S.; Tegude, F.-J.; Dohler, G.H.; Prost, W.;
Bloch gain in a quantum cascade laser
2002 / IEEE / 0-7803-7630-7
By: Faist, J.; Dohler, G.H.; Scalari, G.; Willenberg, H.;
Novel concept for THz-photomixer based on periodically doped heterostructures and quasi ballistic transport
2002 / IEEE / 0-7803-7630-7
By: Gossard, A.C.; Hanson, M.; Driscoll, D.; Dohler, G.H.; Malzer, S.; Kiesel, P.; Eckardt, M.; Pohl, P.; Friedrich, A.; Robledo, L.; Renner, F.; Schwanhausser, A.;
Ballistic transport in nanostructures used for novel THz emitters
2002 / IEEE / 0-7803-7571-8
By: Kiesel, P.; Eckardt, M.; Dohler, G.H.; Gossard, A.C.; Hanson, M.; Driscoll, D.; Schwanhauber, A.; Malzer, S.; Pohl, P.; Friedrich, A.; Robledo, L.; Renner, F.;
Direct determination of the built-in polarization field in InGaN/GaN quantum wells
2002 / IEEE / 0-7803-7418-5
By: Schmidt, R.; Dohler, G.H.; Renner, F.; Johnson, N.M.; Van de Walle, C.G.; Kneissl, M.; Kiesel, P.;
A new concept for highly efficient THz photomixers based on quasi ballistic transport and thin LT-GaAs recombination layers
2002 / IEEE / 0-7803-7418-5
By: Friedrich, A.; Kiesel, P.; Dohler, G.H.; Pohl, P.; Renner, F.; Robledo, L.; Schwanhausser, A.; Eckardt, M.;
THz-emitters based on ballistic transport in semiconductor nanostructures
2003 / IEEE / 0-7803-7824-5
By: Gossard, A.C.; Kiesel, P.; Hanson, M.; Driscoll, D.; Pohl, P.; Dohler, G.H.; Renner, F.; Schwanhausser, A.; Eckardt, M.; Malzer, S.; Friedrich, A.;
A new THz-photomixer based on a n-i-p-n doping superlattice
2004 / IEEE / 0-7803-8490-3
By: Krozer, V.; Gossard, A.C.; Hansen, M.; Driscoll, D.; Dohler, G.H.; Schwanhausser, A.; Loata, G.; Eckardt, M.; Klar, O.; Renner, F.H.; Roskos, H.G.; Loffler, T.;
IVB-6 device aspects of n-i-p-i doping superlattices
1982 / IEEE
By: Dohler, G.H.; Kunzel, H.; Jung, H.; Ploog, K.;
Record Efficiencies from Planar Light-Emitting Diodes
1999 / IEEE / 2-86332-245-1
By: Knobloch, A.; Windisch, R.; Dohler, G.H.; Kiesel, P.; Heremans, P.; Borghs, G.; Kuijk, M.; Dutta, B.;
Modulation Behaviour of Highly Efficient Non-Resonant Cavity Light-Emitting Diodes
1999 / IEEE / 2-86332-245-1
By: Kiesel, P.; Knobloch, A.; Heremans, P.; Borghs, G.; Dutta, B.; Windisch, R.; Dohler, G.H.;
Efficient THz Source Using GaAs and InGaAs nipnip Photomixers
2007 / IEEE / 978-1-4244-0930-3
By: Gossard, A.C.; Malzer, S.; Wilkinson, T.L.J.; Hanson, M.; Brown, E.R.; Preu, S.; Wang, L.J.; Renner, F.; Dohler, G.H.;
Design of Highly Transparent Organic Photodiodes
2008 / IEEE
By: Dohler, G.H.; Furst, J.; Rauch, T.; Tedde, S.; Zaus, E.S.;
Interference experiments with a coherent tunable THz nipnip superlattice photomixer
2007 / IEEE / 978-1-4244-1438-3
By: Renner, F.H.; Preu, S.; Brown, E.R.; Wilkinson, T.L.J.; Malzer, S.; Gossard, A.C.; Hanson, M.; Wang, L.J.; Dohler, G.H.;
Interference between monochromatic Terahertz sources
2008 / IEEE / 978-1-55752-859-9
By: Preu, S.; Wang, L.J.; Dohler, G.H.; Gossard, A.C.; Malzer, S.; Zimmerman, J.D.; Hanson, M.;
Dielectric microcavities for THz radiation: Identical mode spectrum and coupling in poly-ethylene disks
2008 / IEEE / 978-1-55752-859-9
By: Schwefel, H.; Preu, S.; Wang, L.J.; Dohler, G.H.; Malzer, S.;
Telecom-wavelength compatible THz n-i-pn-i-p superlattice photomixers for spectroscopical applications
2009 / IEEE / 978-1-4244-3848-8
By: Dohler, G.H.; Malzer, S.; Preu, S.; Gossard, A.C.; Hong Lu; Lijun Wang;
Coherent superposition of terahertz beams from a phased linear photomixer array
2009 / IEEE / 978-1-4244-3848-8
By: Bauerschmidt, S.; Gossard, A.C.; Hong Lu; Lijun Wang; Dohler, G.H.; Malzer, S.; Preu, S.;
Efficient optical up-conversion by coherent sum-frequency generation for highly sensitive terahertz detection
2011 / IEEE / 978-1-4577-0532-8
By: Sedlmeir, F.; Leuchs, G.; Dohler, G.H.; Malzer, S.; Preu, S.; Bauerschmidt, S.; Strekalov, D.V.; Schwefel, H.G.L.;
Gain Enhancement by Dielectric Horns in the Terahertz Band
2011 / IEEE
By: Andres-Garcia, B.; Segovia-Vargas, D.; Lijun Wang; Dohler, G.H.; Malzer, S.; Preu, S.; Bauerschmidt, S.; Garcia-Munoz, E.;

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