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Author: Chih-Hsin Ko

Results

Influences of surface reconstruction on the atomic-layer-deposited HfO2/Al2O3/n-InAs metal-oxide-semiconductor capacitors
2011 / American Institute of Physics
By: Hau-Yu Lin; San-Lein Wu; Chao-Ching Cheng; Chih-Hsin Ko; Clement H. Wann; You-Ru Lin; Shoou-Jinn Chang; Tai-Bor Wu;
InGaN/GaN light emitting diodes with a p-down structure
2002 / IEEE
By: Chen, J.F.; Su, Y.K.; Chih-Hsin Ko; Chang, S.J.; Ta-Ming Kuan; Webb, J.; Ya-Tung Cherng; Wen-Jen Lin; Wen How Lan;
Flicker noise of GaN-based heterostructure field-effect transistors with Si-doped AlGaN carrier injection layer
2003 / IEEE
By: Ruey-Lue Wang; Sun-Chin Wei; Yan-Kuin Su; Ta-Ming Kuan; Chih-Hsin Ko; Shoou-Jinn Chang;
The impact of uniaxial strain engineering on channel backscattering in nanoscale MOSFETs
2005 / IEEE / 4-900784-00-1
By: Wen-Chin Lee; Tiao-Yuan Huang; Horng-Chih Lin; Chung-Hu Ge; Tang, D.D.; Hung-Wei Chen; Hong-Nien Lin; Chih-Hsin Ko;
Channel backscattering characteristics of uniaxially strained nanoscale CMOSFETs
2005 / IEEE
By: Chih-Hsin Ko; Hung-Wei Chen; Hong-Nien Lin; Wen-Chin Lee; Tiao-Yuan Huang; Horng-Chih Lin; Chung-Hu Ge;
Channel backscattering characteristics of strained PMOSFETs with embedded SiGe source/drain
2005 / IEEE / 0-7803-9268-X
By: Chung-Hu Ge; Chih-Hsin Ko; Hung-Wei Chen; Hong-Nien Lin; Wen-Chin Lee; Tiao-Yuan Huang; Horng-Chih Lin;
Correlating drain-current with strain-induced mobility in nanoscale strained CMOSFETs
2006 / IEEE
By: Horng-Chih Lin; Chung-Hu Ge; Chih-Hsin Ko; Hung-Wei Chen; Hong-Nien Lin; Wen-Chin Lee; Tiao-Yuan Huang;
Effects of Mechanical Uniaxial Stress on SiGe HBT Characteristics
2006 / IEEE / 1-4244-0461-4
By: Tzu-Juei Wang; Tang, D.D.; Wen-Chin Lee; San-Lein Wu; Chih-Hsin Ko; Shoou-Jinn Chang; Ping-Chun Yeh; John Yeh; Hung-Wei Chen;
Strain-Induced Channel Backscattering Modulation in Nanoscale CMOSFETs
2006 / IEEE / 1-4244-0181-4
By: Hung-Wei Chen; Wen-Chin Lee; Tiao-Yuan Huang; Horng-Chih Lin; Chung-Hu Ge; Chih-Hsin Ko; Hong-Nien Lin;
Enhanced Performance of Strained CMOSFETs Using Metallized Source/Drain Extension (M-SDE)
2007 / IEEE / 978-4-900784-03-1
By: Hung-Wei Chen; Wen-Chin Lee; Kehuey Wu; Chung-Hu Ge; Tzu-Juei Wang; Chih-Hsin Ko;
The Effects of Mechanical Uniaxial Stress on Junction Leakage in Nanoscale CMOSFETs
2008 / IEEE
By: Ta-Ming Kuan; San-Lein Wu; Shoou-Jinn Chang; Chih-Hsin Ko; Tzu-Juei Wang; Wen-Chin Lee;
Investigation of Metallized Source/Drain Extension for High-Performance Strained NMOSFETs
2008 / IEEE
By: Tzu-Juei Wang; Wen-Chin Lee; Ta-Ming Kuan; San-Lein Wu; Shoou-Jinn Chang; Hong-Nien Lin; Chih-Hsin Ko;
Low-leakage InAS/AlSb HEMT with high FT-LG product
2009 / IEEE / 978-1-4244-3432-9
By: Jen-Inn Chyi; Pei-Chin Chiu; Heng-Kuang Lin; Ta-Wei Fan; Yu-Chao Lin; Chih-Hsin Ko; Wen-Chin Lee; Wann, C.H.; Meng-Kuei Hsieh; Ta-Ming Kuan;
A new self-aligned contact technology for III-V MOSFETs
2010 / IEEE / 978-1-4244-5063-3
By: Hau-Yu Lin; Chao-Hsin Chien; Guang-Li Luo; Chunlei Zhan; Chun-Yen Chang; Shao-Ming Koh; Xiao Gong; Hock-Chun Chin; Xingui Zhang; Huaxin Guo; Yee-Chia Yeo; Wann, C.H.; Chih-Hsin Ko; Chao-Ching Cheng; Shih-Chiang Huang; Zong-You Han;
DC and RF characteristics of InAs-channel MOS-MODFETs using PECVD SiO2 as gate dielectrics
2010 / IEEE / 978-1-4244-5922-3
By: Meng-Kuei Hsieh; Ta-Wei Fan; Han-Chieh Ho; Wann, C.H.; Wen-Chin Lee; Geng-Ying Liau; Ta-Ming Kuan; Chih-Hsin Ko; Jen-Inn Chyi; Pei-Chin Chiu; Heng-Kuang Lin;
Ti- and Pt-based Schottky gates for InGaSb p-channel HFET development
2010 / IEEE / 978-1-4244-5922-3
By: Meng-Kuei Hsieh; Ta-Ming Kuan; Chih-Hsin Ko; Jen-Inn Chyi; Han-Chieh Ho; Wen-Chin Lee; Heng-Kuang Lin; Geng-Ying Liau; Pei-Chin Chiu; Wann, C.H.;
Insulating Halos to Boost Planar NMOSFET Performance
2010 / IEEE
By: Wen-Chin Lee; Tzu-Juei Wang; Chih-Hsin Ko; Ta-Ming Kuan; Wann, C.H.; Chee Wee Liu; Chao-Yun Lai; Wen-Wei Hsu;
Development of 90Nm InGaAs HEMTs and Benchmarking Logic Performance with Si CMOS
2010 / IEEE / 978-1-4244-7438-7
By: Kuang-Yu Cheng; Chan, D.; Fei Tan; Feng, M.; Chih-Hsin Ko; Wann, C.; Huiming Xu;

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