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Author: Bez, R.

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An Update on Emerging Memory: Progress to 2Xnm
2012 / IEEE / 978-1-4673-1081-9
By: Xiaonan Chen; Holtzclaw, K.; Kinney, W.; Ramaswamy, N.; Prall, K.; Bez, R.; Strand, J.;
Electrical and Thermal Behavior of Tellurium Poor GeSbTe Compounds for Phase Change Memory
2012 / IEEE / 978-1-4673-1081-9
By: Lavizzari, S.; Tortorelli, I.; Redaelli, A.; Boniardi, M.; Bez, R.; Pirovano, A.; Bresolin, C.; Modelli, A.; Erbetta, D.; Varesi, E.; Pellizzer, F.;
Emerging memory technology perspective
2012 / IEEE / 978-1-4577-2081-9
By: Bez, R.; Cappelletti, P.;
High Magnetic Moment of FeCo Nanoparticles Produced in Polyol Medium
2014 / IEEE
By: Zehani, K.; Bessais, L.; Mliki, N.; Mazaleyrat, F.; Moscovici, J.; Bez, R.;
Experimental transient analysis of the tunnel current in EEPROM cells
1990 / IEEE
By: Bez, R.; Cappelletti, P.; Cantarelli, D.;
Complete transient simulation of flash EEPROM devices
1992 / IEEE
By: Bez, R.; Keeney, S.; Lombardi, C.; Ravazzi, L.; Mathewson, A.; Piccinini, F.; Cantarelli, D.;
Transient simulation of the ERASE cycle of floating gate EEPROMs
1991 / IEEE / 0-7803-0243-5
By: Sune, J.; Ricco, B.; Olivo, P.; Bez, R.; Lanzoni, M.;
Complete transient simulation of flash EEPROM devices
1990 / IEEE
By: Ravazzi, L.; Bez, R.; Lombardi, C.; Mathewson, A.; Cantarelli, D.; Piccinini, F.; Keeney, S.; Morelli, M.;
A novel method for the experimental determination of the coupling ratios in submicron EPROM and flash EEPROM cells
1990 / IEEE
By: Cantarelli, D.; Camerlenghi, E.; Bez, R.; Crisenza, G.; Ravazzi, L.;
A test pattern to investigate the effect of capping layers on the hot carrier induced photon spectra of MOSFETs
1994 / IEEE / 0-7803-1757-2
By: Manfredi, M.; Bez, R.; Selmi, L.; Lanzoni, M.;
A test chip and an accurate measurement system to characterize hot hole injection in the gate oxide of p-MOSFETs
1994 / IEEE / 0-7803-1757-2
By: Bez, R.; Sangiorgi, E.; Selmi, L.; Ricco, B.;
Analysis of uniform degradation in n-MOSFETS
1992 / IEEE / 0-7803-0817-4
By: Bez, R.; Sangiorgi, E.; Fiegna, C.; Selmi, L.; Ricco, B.;
Correlation between substrate hot electron energy and homogeneous degradation in n-MOSFET's
1994 / IEEE
By: Bez, R.; Fiegna, C.; Selmi, L.;
Measurement of the hot hole injection probability from Si into SiO/sub 2/ in p-MOSFETs
1993 / IEEE / 0-7803-1450-6
By: Ricco, B.; Bez, R.; Sangiorgi, E.; Selmi, L.;
Failure mechanisms of flash cell in program/erase cycling
1994 / IEEE / 0-7803-2111-1
By: Cantarelli, D.; Bez, R.; Cappelletti, P.; Fratin, L.;
Non-local effects in p-MOSFET substrate hot-hole injection experiments
1995 / IEEE
By: Sangiorgi, E.; Selmi, L.; Bez, R.;
Temperature dependence of gate and substrate currents in the CHE crossover regime
1995 / IEEE
By: Ricco, B.; Bez, R.; Sangiorgi, E.; Selmi, L.; Esseni, D.;
Narrow width effects in CMOS n(p)-well resistors
1996 / IEEE / 0-7803-2783-7
By: Grossi, A.; Bez, R.; Auricchio, C.;
An improved test structure to characterize ultra-low hot carrier injection in homogeneous conditions
1996 / IEEE / 0-7803-2783-7
By: Bez, R.; Selmi, L.; Sangiorgi, E.;
Hot-carriers at low voltages: new experimental evidences and open issues
1996 / IEEE / 0-7803-3393-4
By: Fischer, B.; Selmi, L.; Bez, R.; Ghetti, A.;
Monte Carlo simulation of low voltage hot carrier effects in non volatile memory cells
1996 / IEEE / 0-7803-3393-4
By: Sangiorgi, E.; Bez, R.; Selmi, L.; Ghetti, A.;
Effective mobility in heavily doped n-MOSFETs: measurements and models
1996 / IEEE / 0-7803-3393-4
By: Lacaita, A.L.; Villa, S.; Bez, R.; Perron, L.;
Electron mobility in ULSI MOSFETs: effect of interface traps and oxide nitridation
1997 / IEEE
By: Bez, R.; Pacelli, A.; Lacaita, A.L.; Perron, L.;
A 20 MB/s data rate 2.5 V flash memory with current-controlled field erasing for 1 M cycle endurance
1997 / IEEE / 0-7803-3721-2
By: Schippers, S.; Caser, F.T.; Villa, C.; Dallabora, M.; Bez, R.; Cantarelli, D.; Sali, M.; Bettini, L.; Bartoli, S.; Cane, M.; Defendi, M.; Geraci, A.; Ortolani, G.;
Flash memory cells-an overview
1997 / IEEE
By: Olivo, P.; Bez, R.; Pavan, P.; Zanoni, E.;
A new erasing method for a single-voltage long-endurance flash memory
1998 / IEEE
By: Ortolani, G.; Moioli, L.; Cantarelli, D.; Bez, R.; Dallabora, M.; Villa, C.; Servalli, G.;
A physically-based model of the effective mobility in heavily-doped n-MOSFETs
1998 / IEEE
By: Villa, S.; Bez, R.; Perron, L.M.; Lacaita, A.L.;
A Study Of Injection Conditions In The Substrate Hot Electron Induced Degradation Of n-MOSFETs
1993 / IEEE / 0-7803-1338-0
By: Bez, R.; Sangiorgi, E.; Fiegna, C.; Selmi, L.; Ricco, B.;
Low-voltage hot electrons and soft-programming lifetime prediction in nonvolatile memory cells
1999 / IEEE
By: Selmi, L.; Ghetti, A.; Bez, R.;
A 40 mm/sup 2/ 3 V 50 MHz 64 Mb 4-level cell NOR-type flash memory
2000 / IEEE / 0-7803-5853-8
By: Kai, Y.; Shimizu, S.; Ohnakado, T.; Sugihara, I.; Bez, R.; Grossi, A.; Modelli, A.; Khouri, P.O.; Torelli, G.; Campardo, G.; Micheloni, R.; Commodaro, S.; Yero, E.; Zammabio, M.; Mognoni, S.; Sacco, A.; Picca, M.; Manstleita, A.; Scotti, M.; Motta, I.; Golla, C.; Pierin, A.; Ohba, A.; Fulatsuya, T.; Makabe, R.; Kawai, S.;
40-mm/sup 2/ 3-V-only 50-MHz 64-Mb 2-b/cell CHE NOR flash memory
2000 / IEEE
By: Commodaro, S.; Yero, E.; Campardo, G.; Torelli, G.; Khouri, O.; Visconti, A.; Modelli, A.; Grossi, A.; Bez, R.; Pierin, A.; Micheloni, R.; Golla, C.; Motta, I.; Scotti, M.; Manstretta, A.; Picca, M.; Sacco, A.; Mognoni, S.; Zammattio, M.;
Switching light with light: Absorption edge modulation
1963 / IEEE
By: Bez, R.;
Electronic switching effect in phase-change memory cells
2002 / IEEE / 0-7803-7462-2
By: Benvenuti, A.; Merlani, D.; Lacaita, A.L.; Pirovano, A.; Bez, R.; Pellizzer, F.;
Introduction to flash memory
2003 / IEEE
By: Visconti, A.; Modelli, A.; Camerlenghi, E.; Bez, R.;
Electronic switching in phase-change memories
2004 / IEEE
By: Lacaita, A.L.; Pirovano, A.; Bez, R.; Pellizzer, F.; Benvenuti, A.;
Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials
2004 / IEEE
By: Pirovano, A.; Bez, R.; Benvenuti, A.; Kostylev, S.A.; Pellizzer, F.; Lacaita, A.L.;
Analysis of phase distribution in phase-change nonvolatile memories
2004 / IEEE
By: Pirovano, A.; Lacaita, A.L.; Ielmini, D.; Bez, R.; Pellizzer, F.;
Advanced flash memory reliability
2004 / IEEE / 0-7803-8528-4
By: Bez, R.; Visconti, A.; Modelli, A.;
Analysis of phase-transformation dynamics and estimation of amorphous-chalcogenide fraction in phase-change memories
2004 / IEEE / 0-7803-8315-X
By: Itri, A.; Bez, R.; Pellizzer, E.; Pirovano, A.; Lacaitat, A.L.; Ielmini, D.;
Electronic switching effect and phase-change transition in chalcogenide materials
2004 / IEEE
By: Lacaita, A.L.; Pellizzer, F.; Pirovano, A.; Redaelli, A.; Bez, R.; Ielmini, D.;
Novel /spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applications
2004 / IEEE / 0-7803-8289-7
By: Pellizzer, F.; Pirovano, A.; Bez, R.; Cappelletti, P.; Casagrande, G.; Lacaita, A.; Lowrey, T.; Varesi, E.; Modelli, A.; Zonca, R.; Spandre, A.; Piva, R.; Morandi, R.; Marangon, T.; Cadeo, S.; Besana, P.; Benvenuti, A.; Tosi, M.; Zuliani, P.; Scaravaggi, M.; Magistretti, M.; Ottogalli, F.;
An 8Mb demonstrator for high-density 1.8V Phase-Change Memories
2004 / IEEE / 0-7803-8287-0
By: Bez, R.; Tosi, M.; Pirovano, A.; Ottogalli, F.; Pellizzer, F.; Ferraro, M.; Gastaldi, R.; Costa, L.; Buda, E.; Khouri, O.; Resta, C.; Bedeschi, F.; Casagrande, G.;
Phase-change memory technology for embedded applications
2004 / IEEE / 0-7803-8478-4
By: Zuliani, P.; Tosi, M.; Bez, R.; Bonetalli, P.; Pellizzer, F.; Pirovano, A.; Ottogalli, F.;
4-Mb MOSFET-selected phase-change memory experimental chip
2004 / IEEE / 0-7803-8480-6
By: Resta, C.; Torelli, G.; Pellizzer, F.; Ottogalli, F.; Khouri, O.; Gastaldi, R.; Pirovano, A.; Ferraro, M.; Costa, L.; Casagrande, G.; Buda, E.; Bonizzoni, E.; Boffino, C.; Bez, R.; Bedeschi, F.; Tosi, M.;
Reliability study of phase-change nonvolatile memories
2004 / IEEE
By: Ottogalli, F.; Pirovano, A.; Pellizzer, F.; Redaelli, A.; Tosi, M.; Bez, R.; Lacaita, A.L.; Ielmini, D.;
What we have learned on flash memory reliability in the last ten years
2004 / IEEE / 0-7803-8684-1
By: Visconti, A.; Modelli, A.; Bez, R.; Cappelletti, P.;
Electrothermal and phase-change dynamics in chalcogenide-based memories
2004 / IEEE / 0-7803-8684-1
By: Ielmini, D.; Redaelli, A.; Lacaita, A.L.; Bez, R.; Benvenuti, A.; Pirovano, A.; Pellizzer, F.;
4-Mb MOSFET-selected /spl mu/trench phase-change memory experimental chip
2005 / IEEE
By: Pirovano, A.; Resta, C.; Ottogalli, F.; Khouri, O.; Gastaldi, R.; Ferraro, M.; Costa, L.; Casagrande, G.; Buda, E.C.; Bonizzoni, E.; Boffino, C.; Bez, R.; Bedeschi, F.; Pellizzer, F.; Tosi, M.; Torelli, G.;
Flash memory and beyond
2005 / IEEE / 0-7803-9058-X
By: Cappelletti, P.; Bez, R.;
The Impact of Device Design on the Substrate Enhanced Gate Current of VLSI MOSFET's
1998 / IEEE / 2-86332-234-6
By: Bez, R.; Selmi, L.; Esseni, D.;
A new 40-nm SONOS structure based on backside trapping for nanoscale memories
2005 / IEEE
By: Masson, P.; Chanemougame, D.; Villaret, A.; Monfray, S.; Mazoyer, P.; Regnier, A.; Ranica, R.; Skotnicki, T.; Bez, R.; Dray, C.N.;
/spl mu/trench phase-change memory cell engineering and optimization
2005 / IEEE / 0-7803-9203-5
By: Redaelli, A.; Petruzza, P.; Pellizzer, F.; Pirovano, A.; Bez, R.; Lacaita, A.L.; Ielmini, D.; Modelli, A.; Marangon, T.; Bedeschi, F.; Tortorelli, I.; Mazzone, G.; Scaravaggi, M.; Magistretti, M.; Piva, R.; Cecchini, R.; Besana, P.; Tosi, M.; Ottogalli, F.; Varesi, E.;
Current status of chalcogenide phase change memory
2005 / IEEE / 0-7803-9040-7
By: Bez, R.; Atwood, G.;
Impact of crystallization statistics on data retention for phase change memories
2005 / IEEE / 0-7803-9268-X
By: Lacaita, A.L.; Ielmini, D.; Redaelli, A.; Bez, R.; Pirovano, A.; Pellizzer, F.;
Integrated circuits and manufacturing non-volatile memories
2005 / IEEE / 0-7803-9268-X
By: Sang-Pil Sim; Bez, R.;
Chalcogenide Phase Change Memory: Scalable NVM for the Next Decade?
2006 / IEEE / 1-4244-0027-9
By: Atwood, G.; Bez, R.;
A 90nm Phase Change Memory Technology for Stand-Alone Non-Volatile Memory Applications
2006 / IEEE / 1-4244-0005-8
By: Gleixner, B.; Benvenuti, A.; Pellizzer, F.; Atwood, G.; Bez, R.; Kim, Y.; Pirovano, A.; Marangon, T.; Magistretti, M.; Johnson, B.;
Electrical characterization of anomalous cells in phase change memory arrays
2006 / IEEE / 1-4244-0438-X
By: Mantegazza, D.; Bez, R.; Pellizzer, F.; Varesi, E.; Ielmini, D.; Lacaita, A.L.; Gleixner, B.; Pirovano, A.;
Data Retention Characterization of Phase-Change Memory Arrays
2007 / IEEE / 1-4244-0918-7
By: Pirovano, A.; Gleixner, B.; Bez, R.; Tosi, M.; Tortorelli, E.; Ottogalli, F.; Sarkar, J.;
90nm Phase Change Technology with �Trench and Lance Cell Elements
2007 / IEEE / 1-4244-0584-X
By: Atwood, G.; Bez, R.;
Amorphization dynamics of Ge2Sb2T35 films under nano- and femtosecond laser pulse irradiation
2007 / IEEE / 978-1-4244-0930-3
By: Wiemer, C.; Pirovano, A.; Bez, R.; Afonso, C.N.; Solis, J.; Puerto, D.; Siegel, J.;
Self-aligned �Trench phase-change memory cell architecture for 90nm technology and beyond
2007 / IEEE / 978-1-4244-1123-8
By: Pirovano, A.; Bez, R.; Atwood, G.; Fackenthal, R.; Bedeschi, F.; Marangon, T.; Erbetta, D.; Varesi, E.; Petruzza, P.; Magistretti, M.; Harrigan, R.; Tortorelli, I.; Pellizzer, F.;
Program circuit for a phase change memory array with 2 MB/s write throughput for embedded applications
2008 / IEEE / 978-1-4244-2361-3
By: Bez, R.; Pellizzer, F.; Tortorelli, I.; Annunziata, R.; Zuliani, P.; Bettini, L.; Borghi, M.; Pasotti, M.; Giacomi, G.; Calvetti, E.; De Sandre, G.;
Low Temperature Rectifying Junctions for Crossbar Non-Volatile Memory Devices
2009 / IEEE / 978-1-4244-3762-7
By: Csaba, G.; Arcari, M.; Spiga, S.; Kutrzeba-Kotowska, B.; Lugli, P.; Tallarida, G.; Bez, R.; Huby, N.; Redaelli, A.;
Chalcogenide PCM: a memory technology for next decade
2009 / IEEE / 978-1-4244-5641-3
By: Bez, R.;
Reliability characterization of Phase Change Memory
2009 / IEEE / 978-1-4244-4953-8
By: Bez, R.; Pellizzer, F.; Gleixner, B.;
Non Volatile Memories-Status and Emerging Trends
1991 / IEEE / 444890661
By: Crisenza, G.; Bez, R.; Melanotte, M.;
Analysis of Transient Behaviour of Floating Gate EEPROMs
1992 / IEEE / 444894780
By: Bez, R.; Mathewson, A.; Keeney, S.; Concannon, A.; Lombardi, C.;
Numerical Simulation of Non-Volatile Memories
1993 / IEEE / 2863321358
By: Keeney, S.; Lombardi, C.; Mathewson, A.; Concannon, A.; Piccinini, F.; Cantarelli, D.; Ravazzi, L.; Bez, R.;
Experimental Analysis of Polarization in the Hot-Carrier Luminescence of Silicon Devices
1994 / IEEE / 863321579
By: Lanzoni, M.; Pieracci, A.; Selmi, L.; Sangiorgi, E.; Bez, R.; Pavesi, M.;
Applications of a Novel Hot Carrier Injection Model in Flash EEPROM Design
1994 / IEEE / 863321579
By: Piccinini, F.; Mathewson, A.; Concannon, A.; Lombardi, C.; Bez, R.; Mei, G.L.;
Impact of Fast Interface States on Effective Mobility of Heavily-Doped MOSFET's
1996 / IEEE / 286332196X
By: Perron, L.; Bez, R.; Guzzetti, S.; Lacaita, A.;
Soft Programming in Scaled Flash EEPROM Cells
1995 / IEEE / 286332182X
By: Ravazzi, L.; Bez, R.; Selmi, L.; Esseni, D.; Sangiorgi, E.;
A Triple-well Architecture for Low-voltage Operation in Submicron CMOS Devices
1996 / IEEE / 286332196X
By: Losavio, A.; Bez, R.; Auricchio, C.; Zabberoni, P.; Sala, C.; Maurelli, A.;
Series resistance effects on EPROM programming
1990 / IEEE / 750300655
By: Maurelli, A.; Cappelletti, P.; Cantarelli, D.; Bez, R.; Ravazzi, L.;
Impact of material composition on the write performance of phase-change memory devices
2010 / IEEE / 978-1-4244-6721-1
By: Pellizzer, F.; Bez, R.; Modelli, A.; Erbetta, D.; Bresolin, C.; Magistretti, M.; Varesi, E.; Allegra, M.; Tortorelli, I.; Pirovano, A.; Redaelli, A.; Lacaita, A.L.; Ielmini, D.; Boniardi, M.;
Phase Change Memory development trends
2010 / IEEE / 978-1-4244-6721-1
By: Pirovano, A.; Pellizzer, F.; Gleixner, B.; Bossi, S.; Bez, R.; Tosi, M.; Servalli, G.;
A 4 Mb LV MOS-Selected Embedded Phase Change Memory in 90 nm Standard CMOS Technology
2011 / IEEE
By: Mastracchio, G.; Scotti, L.; Zuliani, P.; Mattavelli, P.; Borghi, M.; Pasotti, M.; Bedeschi, F.; Pirola, A.; Bettini, L.; De Sandre, G.; Bez, R.; Marmonier, L.; Gastaldi, R.;
Non-Volatile semiconductor memories for nano-scale technology
2010 / IEEE / 978-1-4244-7032-7
By: Bez, R.; Pellizzer, F.;

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