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Author: Bartle, D.

Results

Skyworks capacitor model for ESD applications
2011 / IEEE / 978-1-4577-1997-4
By: Yu Zhu; Hong Yin; Bartle, D.; Klimashov, A.; Cejun Wei;
GaAs resistor model predicting harmonic, transient and breakdwon
2011 / IEEE / 978-2-87487-023-1
By: Yu Zhu; Bartle, D.; Zhang, C.; Hong Yin; Klimashov, O.; Cejun Wei;
Accurate capacitance/current-voltage based lookup-table diode model
2012 / IEEE / 978-1-4577-1438-2
By: Yu Zhu; Ce-Jun Wei; Bartle, D.; Gao, F.; Whitefield, D.; Hong Yin;
The effect of gate recess width on the linearity of GaAs MESFETs
1997 / IEEE / 0-7803-4194-5
By: Mitchell, D.; DiCarlo, P.; Bartle, D.; Tkachenko, Y.; Petzold, D.;
High reliability GaAs MESFET for suppressed hot-electron-induced degradation of high efficiency power amplifiers
1997 / IEEE / 0-7908-0064-0
By: Tkachenko, Y.A.; Bartle, D.; Wei, C.J.;
Table-based FET model assembled from small-signal models
1998 / IEEE / 0-7803-4988-1
By: Bartle, D.; Tkachenko, Y.A.; Wei, C.J.;
An accurate large-signal model of GaAs MESFET which accounts for charge conservation, dispersion, and self-heating
1998 / IEEE
By: Bartle, D.; Tkachenko, Y.A.; Wei, C.-J.;
The correlation between inter-modulation distortion of GaAs MESFETs and ungated recess width
1999 / IEEE / 0-7803-5152-5
By: Bartle, D.; Tkachenko, Y.A.; DiCarlo, P.; Wei, C.J.;
Large-signal modeling of microwave GaAs MESFET's, challenges and solutions
1998 / IEEE / 0-7803-4308-5
By: Wei, C.J.; Bartle, D.; Tkachenko, Y.;
Table-based dynamic FET model assembled from small-signal models
1999 / IEEE
By: Tkachenko, Y.A.; Ce-Jun Wei; Bartle, D.;
Large-signal model of triple-gate MESFET/PHEMT for switch applications
1999 / IEEE / 0-7803-5135-5
By: Wei, C.J.; Bartle, D.; Tkachenko, Y.A.; Manzura, O.; Johnson, D.;
Comparative study of hot-electron reliability of PHEMT vs. MESFET for high efficiency power amplifiers
1999 / IEEE / 0-7803-5135-5
By: Tkachenko, Y.; Bartle, D.; Zhao, Y.; Wei, C.; Klimashov, A.;
E-PHEMT for single supply, no drain switch, and high efficiency cellular telephone power amplifiers
1999 / IEEE / 0-7803-5585-7
By: Tkachenko, Y.; Bartle, D.; Zhao, Y.; Wei, C.; Klimashov, A.;
Suppression of electrochemical etching effects in GaAs PHEMTs
1999 / IEEE / 0-7803-5585-7
By: Bartle, D.; Tkachenko, Y.; Zhao, Y.;
Scaleable small-signal MESFET/PHEMT models up to 30 mm periphery
1999 / IEEE / 0-7803-5761-2
By: Wei, C.J.; Bartle, D.; Tkachenko, Y.A.; McCarter, S.;
Improved breakdown voltage and hot-electron reliability PHEMT for high efficiency power amplifiers
1999 / IEEE / 0-7803-5761-2
By: Klimashov, A.; Zhao, Y.; Tkachenko, Y.; Bartle, D.; Wei, C.J.;
Analysis and experimental waveform study on inverse class class-F mode of microwave power FETs
2000 / IEEE / 0-7803-5687-X
By: Tkachenko, Y.A.; DiCarlo, P.; Wei, C.J.; Bartle, D.; McMorrow, R.;
A new model for E-mode power PHEMT and its optimum loading operation
1999 / IEEE / 0-7803-5807-4
By: Bartle, D.; Tkachenko, Y.A.; Wei, C.J.;
Waveform measurement technique and its applications to optimum loading studies on power FETs
2000 / IEEE / 0-7803-5743-4
By: Bartle, D.; Tkachenko, Y.A.; Wei, C.J.;
A fully selective double-recess enhancement mode PHEMT process for linear and saturated power amplifiers
2000 / IEEE / 0-7803-6435-X
By: Tkachenko, Y.; Bartle, D.; Klimashov, A.; Wei, C.; Zhao, Y.;
Alpha owned PHEMT model and its verification by load-pull and waveform measurements
2000 / IEEE / 0-7803-6435-X
By: Wei, C.J.; Bartle, D.; Tkachenko, Y.A.;
Waveform characterization and modeling of dynamic charge behavior of InGaP-GaAs HBTs
2001 / IEEE / 0-7803-6538-0
By: Hu, J.T.; Sprinkle, S.; Wei, C.-J.; Bartle, D.; Dicarlo, P.; Mitchell, B.; Chung, H.-C.;
A new model for enhancement-mode power pHEMT
2002 / IEEE
By: Tkachenko, Y.A.; Ce-Jun Wei; Bartle, D.;
Novel approach to a consistent large-signal and small-signal modeling of power PHEMTs
2001 / IEEE / 0-7803-7138-0
By: Tkachenko, Y.A.; Bartle, D.; Wei, C.-J.;
Completely consistent 'no-charge' PHEMT model including DC/RF dispersion
2002 / IEEE / 0-7803-7239-5
By: Wei, C.J.; Bartle, D.; Gering, J.; Tkachenko, Y.A.;
Low-Loss High-Power Ka-Band Multipole Multithrow MMIC PIN Switch
1997 / IEEE
By: Bartle, D.; Bogan, Z.; Whitefield, D.; Daly, M.; Delconte, J.;
High-performance Power PHEMT for Wireless Communications
1997 / IEEE
By: Mitchell, D.; Leung, L.; Kapitan, L.; Tkachenko, Y.; Bartle, D.;
Enhancement Mode PHEMT for Single Supply High Efficiency Power Amplifiers
1999 / IEEE
By: Zhao, Y.; Wei, C.; Klimashov, A.; Tkachenko, Y.; Bartle, D.;
Performance Comparison of HBTs and Quasi E-mode PHEMTs for Single Supply High Efficiency Power Amplifiers
2001 / IEEE
By: Tkachenko, Y.; Bartle, D.; Sun, M.; Ho, Y. Zhao W.; Kao, T.; Lee, J.; Gering, J.; Sprinkle, S.; Wei, C.;
Electromagnetic only HEMT model for switch design
2009 / IEEE / 978-1-4244-2801-4
By: Hong Yin; Klimashov, O.; Zhang, C.; Nohra, G.; Cejun Wei; Yu Zhu; Bartle, D.;
Distributed switch FET model that predicts better insertion loss and harmonics
2010 / IEEE / 978-2-87487-017-0
By: Bartle, D.; Zhang, C.; Hong Yin; Klimashov, A.; Yu Zhu; Ce-Jun Wei;
Progress on distributed resistance model for pHEMT
2010 / IEEE / 978-1-4244-9998-4
By: Cejun Wei; Hong Yin; Bartle, D.; Zhang, C.; Klimashov, A.; Yu Zhu;
Complete electromagnetic simulation of HEMT switch circuit
2010 / IEEE / 978-4-902339-21-5
By: Klimashov, O.; Zhang, C.; Nohra, G.; Cejun Wei; Yu Zhu; Bartle, D.; Hong Yin;
A comprehensive PHEMT core model for switch applications
2011 / IEEE / 978-1-61284-757-3
By: Hong Yin; Yu Zhu; Ce-Jun Wei; Bartle, D.; Klimashov, O.;
A comprehensive PHEMT core model for switch applications
2011 / IEEE / 978-1-61284-757-3
By: Wei, C.; Zhu, Y.; Yin, H.; Klimashov, O.; Bartle, D.;

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