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Author: Adesida, I.

Results

Frequency response of AlInAs/GaInAs/InP modulation-doped field-effect transistors at cryogenic temperatures
1988 / IEEE
By: Laskar, J.; Adesida, I.; Kolodzev, J.; Sivco, D.; Boor, S.; Fischer, R.; Cho, A.Y.; Ketterson, A.; Reis, S.;
Loss in heterostructure waveguide bends formed on a patterned substrate
1989 / IEEE
By: Coleman, J.J.; Adesida, I.; DeTemple, T.A.; Bryan, R.; Tang, T.K.; Swanson, P.D.; Cockerill, T.; Andideh, E.; Miller, L.M.;
DC and RF characterization of short-gate-length InGaAs/InAlAs MODFETs
1989 / IEEE
By: Ketterson, A.A.; Hier, H.; Aina, O.A.; Kolodzey, J.; Adesida, I.; Brock, T.L.; Laskar, J.;
Gate-controlled negative differential resistance in drain current characteristics of AlGaAs/InGaAs/GaAs pseudomorphic MODFETs
1989 / IEEE
By: Baillargeon, J.N.; Ketterson, A.A.; Laskar, J.; Kolodzey, J.; Cheng, K.Y.; Adesida, I.; Brock, T.;
Poisson modeling of ultraconfined AlGaAs-GaAs semiconductor devices with selective doping
1990 / IEEE
By: Adesida, I.; Klejwa, M.; Leburton, J.P.; Bigelow, J.M.;
Characteristics of GaAs/AlGaAs-doped channel MISFET's at cryogenic temperatures
1990 / IEEE
By: Kolodzey, J.; Laskar, J.; Cho, A.Y.; Adesida, I.; Ketterson, A.A.;
0.33- mu m gate-length millimeter-wave InP-channel HEMTs with high f/sub 1/ and f/sub max/
1991 / IEEE
By: Adesida, I.; Ketterson, A.; Tong, M.; Meerschaert, A.; Aina, L.; O'Connor, J.M.; Mattingly, M.; Burgess, M.;
A high-performance AlGaAs/InGaAs/GaAs pseudomorphic MODFET-based monolithic optoelectronic receiver
1992 / IEEE
By: Seo, J.-W.; Tong, M.; Keterson, A.A.; Adesida, I.; Kang, S.-M.; Morikuni, J.J.; Nummila, K.;
A 1.45-W/mm, 30-GHz InP-channel power HEMT
1992 / IEEE
By: Aina, O.; Mattingly, M.; Meerschaert, A.; O'Connor, J.M.; Tong, M.; Ketterson, A.; Adesida, I.; Burgess, M.;
A comparative study of metal-semiconductor-metal photodetectors on GaAs with indium-tin-oxide and Ti/Au electrodes
1992 / IEEE
By: Ballegeer, D.G.; Ketterson, A.A.; Seo, J.-W.; Gessert, T.; Li, X.; Adesida, I.; Cheng, K.-Y.;
0.33- mu m millimeter-wave InP-channel HEMTs with high f/sub T/ and f/sub max/
1991 / IEEE
By: Tong, M.; Meerschaert, A.; Mattingly, M.; O'Connor, J.; Ketterson, A.; Burgess, M.; Aina, L.; Adesida, I.;
OMVPE-grown InAlAs/InGaAs/InP MODFET's with performance comparable to those grown by MBE
1992 / IEEE
By: Mattingly, M.; Aina, L.; Adesida, I.; Ketterson, A.; Nummila, K.; Tong, M.;
A 10-GHz bandwidth pseudomorphic GaAs/InGaAs/AlGaAs MODFET-based OEIC receiver
1992 / IEEE
By: Cheng, K.Y.; Kang, S.-M.; Ballegeer, D.; Nummila, K.; Adesida, I.; Seo, J.-W.; Tong, M.; Ketterson, A.;
High speed cryogenic operation of sub-micron pseudomorphic InGaAs/GaAs FETs
1991 / IEEE / 0-7803-0491-8
By: Kolodzey, J.; Feng, M.; Adesida, I.; Ketterson, A.; Kruse, J.; Maranowski, S.; Laskar, J.;
InAlAs/InGaAs/InP MODFET's with uniform threshold voltage obtained by selective wet gate recess
1992 / IEEE
By: Nummila, K.; Tong, M.; Bhat, R.; Caneau, C.; Adesida, I.; Ketterson, A.;
Etching of InP in methane-based plasmas
1990 / IEEE
By: Jones, C.; Andideh, E.; Adesida, I.; Finnegan, N.;
A MODFET-based optoelectronic integrated circuit receiver for optical interconnects
1993 / IEEE
By: Morikuni, J.J.; Nummila, K.L.; Tong, M.H.; Seo, J.-W.; Cheng, K.-Y.; Ketterson, A.A.; Adesida, I.; Kang, S.-M.;
A high-speed integrated optoelectronic photoreceiver
1992 / IEEE / 0-7803-0593-0
By: Ketterson, A.A.; Morikuni, J.J.; Cheng, K.Y.; Adesida, I.; Tong, M.; Kang, S.M.; Nummila, K.; Seo, J.-M.;
Selective wet etching for InGaAs/InAlAs/InP heterostructure field-effect transistors
1992 / IEEE / 0-7803-0522-1
By: Mattingly, M.; Aina, L.; Adesida, I.; Nummila, K.; Ketterson, A.A.; Tong, M.;
Performance study of InGaAs/InAlAs/InP MODFETs on heterostructures grown by OMVPE and MBE
1992 / IEEE / 0-7803-0522-1
By: Nummila, K.; Tong, M.; Adesida, I.; Mattingly, M.; Aina, L.; Ketterson, A.A.;
InAlAs/InGaAs heterostructure FET's processed with selective reactive-ion-etching gate-recess technology
1993 / IEEE
By: Bhat, R.; Caneau, C.; Adesida, I.; Nummila, K.; Agarwala, S.;
Application of indium-tin-oxide with improved transmittance at 1.3 mu m for MSM photodetectors
1993 / IEEE
By: Jong-Wook Seo; Adesida, I.; Bhat, R.; Caneau, C.;
A monolithic integrated optoelectronic photoreceiver using an MSM detector
1993 / IEEE / 0-7803-0987-1
By: Morikuni, J.J.; Tong, M.H.; Nummila, K.; Seo, J.-W.; Ketterson, A.A.; Kang, S.-M.; Adesida, I.;
Photo-injected carrier distributions in metal-semiconductor-metal photodetectors imaged by photoluminescence microscopy
1994 / IEEE
By: Xu, Q.; Gu, S.Q.; Reuter, E.E.; Bishop, S.G.; Adesida, I.; Wohlmuth, W.;
Long wavelength metal-semiconductor-metal photodetectors with Ti/Au and indium-tin-oxide electrodes
1994 / IEEE / 0-7803-1476-X
By: Seo, J.W.; Adesida, I.; Bhat, R.; Caneau, C.; Wohlmuth, W.;
Reactive ion etching-induced damage in InAlAs/InGaAs heterostructures
1994 / IEEE / 0-7803-1476-X
By: Adesida, I.; Agarwala, S.; Bhat, R.; Caneau, C.;
Photoluminescence of InGaAs/InP quantum dots
1994 / IEEE / 0-7803-1476-X
By: Chang, H.; Reuter, E.; Panepucci, R.; Xu, Q.; Chen, A.C.; Gu, S.Q.; Bishop, S.G.; Cheng, K.Y.; Adesida, I.;
System-level considerations for OEIC photoreceiver design
1993 / IEEE / 0-7803-1263-5
By: Seo, J.W.; Ketterson, A.A.; Tong, M.; Morikuni, J.J.; Adesida, I.; Kang, S.M.; Nummila, K.;
Highly selective etching of InGaAs on InAlAs in HBr plasma
1993 / IEEE / 0-7803-0993-6
By: Adesida, I.; Bhat, R.; Caneau, C.; Agarwala, S.;
High-performance 0.15 /spl mu/m-gatelength OMVPE-grown InAlAs/InGaAs MODFETs
1993 / IEEE / 0-7803-0993-6
By: Nummila, K.; Adesida, I.; Bhat, R.; Caneau, C.; Tong, M.;
High speed p-type SiGe modulation-doped field-effect transistors
1996 / IEEE
By: Ismail, K.; Fay, P.; Arafa, M.; Adesida, I.; Meyerson, B.S.; Chu, J.O.;
18.5-GHz bandwidth monolithic MSM/MODFET photoreceiver for 1.55-�m wavelength communication systems
1996 / IEEE
By: Wohlmuth, W.; Fay, P.; Adesida, I.; Caneau, C.;
Low dark current InAlAs/InGaAs metal-semiconductor-metal photodetectors
1996 / IEEE / 0-7803-3283-0
By: Wohlmutt, A.; Adesida, I.; Caneau, C.; Fay, P.;
Modeling of InGaAs MSM photodetector for circuit-level simulation
1996 / IEEE
By: Wohlmuth, W.; Xiang, A.; Adesida, I.; Sung-Mo Kang; Fay, P.;
High performance submicron-gate SiGe p-type modulation-doped field-effect transistors
1995 / IEEE / 0-7803-2788-8
By: Ismail, K.; Fay, P.; Arafa, M.; Adesida, I.; Meyerson, B.S.; Chu, J.O.;
A 15 GHz bandwidth lattice-matched InAlAs/InGaAs/InP HEMT-based OEIC photoreceiver
1995 / IEEE / 0-7803-2788-8
By: Fay, P.; Adesida, I.; Caneau, C.; Wohlmuth, W.;
Dark current suppression in GaAs metal-semiconductor-metal photodetectors
1996 / IEEE
By: Adesida, I.; Fay, P.; Wohlmuth, W.A.;
DC and RF performance of 0.25 �m p-type SiGe MODFET
1996 / IEEE
By: Ismail, K.; Fay, P.; Arafa, M.; Adesida, I.; Meyerson, B.S.; Chu, J.O.;
Use of multimode interference couplers to broaden the passband of wavelength-dispersive integrated WDM filters
1996 / IEEE
By: Caneau, C.; Rajhel, A.; Andreadakis, N.C.; Leblanc, H.P.; Amersfoort, M.R.; Bhat, R.; Adesida, I.; Soole, J.B.D.; Youtsey, C.; Koza, M.A.;
A 70-GHz f/sub T/ low operating bias self-aligned p-type SiGe MODFET
1996 / IEEE
By: Arafa, M.; Ismail, K.; Chu, J.O.; Meyerson, B.S.; Adesida, I.;
160 GHz enhancement-mode InAlAs/InGaAs/InP high electron mobility transistor
1996 / IEEE / 0-7803-3358-6
By: Arafa, M.; Mahajan, A.; Adesida, I.; Caneau, C.; Fay, P.;
Fabrication and characterization of a 83 MHz high temperature /spl beta/-SiC MESFET operational amplifier with an AlN isolation layer on
1996 / IEEE / 0-7803-3358-6
By: Moeller, D.F.; Adesida, I.; Mahajan, A.; Harris, G.L.; Diogu, K.K.; Bertram, R.A.;
Monolithic integration of InAlAs/InGaAs/InP enhancement- and depletion-mode high electron mobility transistors
1996 / IEEE / 0-7803-3393-4
By: Mahajan, A.; Adesida, I.; Cueva, G.; Arafa, M.; Fay, P.;
Suppression of modal birefringence in InP-InGaAsP waveguides through use of compensated tensile strain
1997 / IEEE
By: Adesida, I.; Youtsey, C.; Rajhel, A.; Andreadakis, N.C.; LeBlanc, H.P.; Caneau, C.; Soole, J.B.D.;
A strained-layer InGaAs-GaAs asymmetric cladding gain-coupled DFB laser with titanium surface gratings by metalorganic chemical vapor deposition
1997 / IEEE
By: Adesida, I.; Panepucci, R.; Osowski, M.L.; Coleman, J.J.;
High performance polarization-independent WDM filtering using an InP reflective arrayed waveguide grating
1996 / IEEE / 0-7803-3160-5
By: Soole, J.B.D.; Amersfoort, M.R.; LeBlanc, H.P.; Rajhel, A.; Caneau, C.; Youtsey, C.; Adesida, I.;
0.3-�m gate-length enhancement mode InAlAs/InGaAs/InP high-electron mobility transistor
1997 / IEEE
By: Mahajan, A.; Adesida, I.; Caneau, C.; Fay, P.; Arafa, M.;
High-speed InGaAs metal-semiconductor-metal photodetectors with thin absorption layers
1997 / IEEE
By: Fay, P.; Wohlmuth, W.A.; Adesida, I.; Martin, E.A.; Vaccaro, K.;
High-speed digital and analog performance of low-noise integrated MSM-HEMT photoreceivers
1997 / IEEE
By: Adesida, I.; Chandrasekhar, S.; Caneau, C.; Wohlmuth, W.; Fay, P.;
Ring oscillator using InAlAs/InGaAs/InP enhancement/depletion-mode high electron mobility transistor direct-coupled FET logic inverters
1997 / IEEE / 0-7803-3898-7
By: Arafa, M.; Fay, P.; Mahajan, A.; Cueva, G.; Adesida, I.;
Digital performance of high-speed MSM-HEMT monolithically integrated photoreceivers
1997 / IEEE / 0-7803-3898-7
By: Fay, P.; Adesida, I.; Chandrasekhar, S.; Caneau, C.; Wohlmuth, W.;
High-speed InGaAs-based vertical Schottky barrier photodetectors
1997 / IEEE / 0-7803-3898-7
By: Seo, J.-W.; Wohlmuth, W.; Adesida, I.; Caneau, C.; Pay, P.;
Fabrication and characterization of an InAlAs/InGaAs/InP ring oscillator using integrated enhancement- and depletion-mode high-electron mobility transistors
1997 / IEEE
By: Fay, P.; Arafa, M.; Cueva, G.; Mahajan, A.; Adesida, I.;
A high-speed ITO-InAlAs-InGaAs Schottky-barrier photodetector
1997 / IEEE
By: Caneau, C.; Fay, P.; Seo, J.-W.; Wohlmuth, W.A.; Adesida, I.;
InGaAsP-InP ridge-waveguide DBR lasers with first-order surface gratings fabricated using CAIBE
1997 / IEEE / 0-7803-3895-2
By: Roh, S.D.; Hughes, J.S.; Youtsey, C.T.; Jones, A.M.; Lammert, R.M.; Coleman, J.J.; Adesida, I.;
Design, fabrication, and performance of high-speed monolithically integrated InAlAs/InGaAs/InP MSM/HEMT photoreceivers
1997 / IEEE
By: Fay, P.; Adesida, I.; Chandrasekhar, S.; Caneau, C.; Wohlmuth, W.A.; Arafa, M.;
InGaAsP-InP ridge-waveguide DBR lasers with first-order surface gratings fabricated using CAIBE
1997 / IEEE
By: Jones, A.M.; Lammert, R.M.; Coleman, J.J.; Adesida, I.; Roh, S.D.; Hughes, J.S.; Youtsey, C.T.;
Utilization of an electron beam resist process to examine the effects of asymmetric gate recess on the device characteristics of AlGaAs/InGaAs PHEMTs
1997 / IEEE
By: Ketterson, A.A.; Ballegeer, D.; Grundbacher, R.; Adesida, I.; Kao, Y.-C.;
High performance 0.25 /spl mu/m gate-length doped-channel AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates
1997 / IEEE / 0-7803-4100-7
By: Adesida, I.; Asif Khan, M.; Yang, J.W.; Chen, Q.; Ping, A.T.;
High-power microwave 0.25-�m gate doped-channel GaN/AlGaN heterostructure field effect transistor
1998 / IEEE
By: Sullivan, G.J.; Adesida, I.; Ping, A.T.; Higgings, J.A.; Sailor, A.L.; Chen, Q.; Shur, M.S.; Khan, M.A.; Gaska, R.; Yang, J.W.;
DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates
1998 / IEEE
By: Ping, A.T.; Adesida, I.; Khan, M.A.; Yang, J.W.; Chen, Q.;
Effect of diffraction and interference in submicron metal-semiconductor-metal photodetectors
1998 / IEEE
By: Wohlmuth, W.A.; Arafa, M.; Adesida, I.; Fay, P.;
Integration of InAlAs/InGaAs/InP enhancement- and depletion-mode high electron mobility transistors for high-speed circuit applications
1998 / IEEE
By: Fay, P.; Mahajan, A.; Adesida, I.; Arafa, M.;
A comparative study of integrated photoreceivers using MSM/HEMT and PIN/HEMT technologies
1998 / IEEE
By: Mahajan, A.; Wohlmuth, W.; Fay, P.; Adesida, I.; Chanrasekhar, S.; Caneau, C.;
Low-noise performance of monolithically integrated 12-Gb/s p-i-n/HEMT photoreceiver for long-wavelength transmission systems
1998 / IEEE
By: Fay, P.; Adesida, I.; Chandrasekhar, S.; Caneau, C.; Mahajan, A.; Wohlmuth, W.;
High sensitivity 12 Gb/s monolithically integrated pin-HEMT photoreceivers
1998 / IEEE / 0-7803-4220-8
By: Caneau, C.; Adesida, I.; Fay, P.; Chandrasekhar, S.;
Enhancement-mode InP-based HEMT devices and applications
1998 / IEEE / 0-7803-4220-8
By: Adesida, I.; Cueva, G.; Mahajan, A.;
Enhancement-mode high electron mobility transistors (E-HEMTs) lattice-matched to InP
1998 / IEEE
By: Caneau, C.; Fay, P.; Arafa, M.; Mahajan, A.; Adesida, I.;
Etching for GaN laser facets and material characterization
1998 / IEEE / 0-7803-4947-4
By: Bulman, G.; Romano, L.T.; Khan, F.; Ping, A.T.; Youtsey, C.; Adesida, I.;
A Wide Bandwidth Monolithic Long Wavelength MODFET/ MSM Photoreceiver
1995 / IEEE / 0-7803-2448-X
By: Caneau, C.; Wohlmuth, W.; Fay, P.; Adesida, I.;
InP-based HEMTs for high speed, low power circuit applications
1998 / IEEE / 0-7803-4306-9
By: Mahajan, A.; Adesida, I.; Cueva, G.;
p-Type SiGe transistors with low gate leakage using SiN gate dielectric
1999 / IEEE
By: Hammond, R.; Wang, X.W.; Lu, W.; Adesida, I.; Kuliev, A.; Ma, T.P.; Ismail, K.; Chu, J.O.; Koester, S.;
Etched cavity InGaAsP-InP waveguide Fabry-Perot filter tunable by current injection
1999 / IEEE
By: Mak, M.W.K.; Tsang, H.K.; Adesida, I.; Youtsey, C.; Soole, J.B.D.; Chan, L.Y.;
AlAs/sub 0.56/Sb/sub 0.44//In/sub 0.53/Ga/sub 0.47/As doped multi-channel field effect transistors
1999 / IEEE / 0-7803-5170-3
By: Adesida, I.; Cueva, G.; Dumka, D.C.; Aina, O.A.; Hier, H.S.;
High performance 0.15 /spl mu/m self-aligned SiGe p-MOS-MODFET's with SiN gate dielectric
1999 / IEEE / 0-7803-5410-9
By: Chu, J.O.; Wang, X.W.; Koester, S.J.; Hammond, R.; Lu, W.; Adesida, I.; Ma, T.P.;
Metamorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMTs on GaAs substrate with f/sub T/ over 200 GHz
1999 / IEEE / 0-7803-5410-9
By: Lemonias, P.J.; Hoke, W.E.; Dumka, D.C.; Adesida, I.; Cueva, G.;
High performance 0.1 /spl mu/m gate-length p-type SiGe MODFET's and MOS-MODFET's
2000 / IEEE
By: Adesida, I.; Ma, T.-P.; Chu, J.O.; Wang, X.-W.; Koester, S.J.; Kuliev, A.; Lu, W.;
High-speed MSM-HEMT and PIN-HEMT monolithic photoreceivers
1999 / IEEE / 0-7803-5807-4
By: Fay, P.; Adesida, I.; Caneau, C.;
Wideband AlGaN-GaN HEMTs on SiC for low noise applications
2000 / IEEE / 0-7803-6472-4
By: Adesida, I.; Khan, M.A.; Yang, J.W.; Wu Lu;
Recessed-gate GaN MESFET using ICP-RIE for high temperature microwave applications
2000 / IEEE / 0-7803-6472-4
By: Lee, C.; Adesida, I.; Piner, E.; Lu, W.;
0.13 /spl mu/m gate-length In/sub 0.52/Al/sub 0.48/As-In/sub 0.53/Ga/sub 0.47/As metamorphic HEMTs on GaAs substrate
2000 / IEEE / 0-7803-6472-4
By: Cueva, G.; Dumka, D.C.; Adesida, I.; Lemonias, P.J.; Hoke, W.E.;
P-i-n photodiodes in metamorphic InAlAs-InGaAs-GaAs for long wavelength applications
2000 / IEEE / 0-7803-6472-4
By: Jang, J.-H.; Cueva, G.; Adesida, I.; Hoke, W.E.; Lemonias, P.J.; Dumka, D.C.;
DC and RF characteristics of doped multichannel AlAs/sub 0.56/Sb/sub 0.44//In/sub 0.53/Ga/sub 0.47/As field effect transistors with variable gate-lengths
2001 / IEEE
By: Dumka, D.C.; Adesida, I.; Aina, O.A.; Hier, H.; Cueva, G.;
A study of on-state and off-state breakdown voltages in GaN MESFETs
2000 / IEEE / 0-7803-6381-7
By: Adesida, I.; Bahl, S.R.; Piner, E.; Lu, W.; Lee, C.; Kuliev, A.;
AlGaN/GaN HEMTs on SiC with over 100 GHz f/sub T/ and low microwave noise
2001 / IEEE
By: Wu Lu; Adesida, I.; Khan, M.A.; Jinwei Yang;
Polarization-independent InP-arrayed waveguide filter using square cross-section waveguides
1996 / IEEE / 1-55752-422-X
By: Soole, J.B.D.; Amersfoort, M.R.; Adesida, I.; Youtsey, C.; Andreadakis, N.C.; LeBlanc, H.P.; Koza, M.A.; Caneau, C.; Rajhel, A.; Bhat, R.;
18-GHz bandwidth long-wavelength MODFET and metal-semiconductor-metal photodetector-based integrated photoreceiver
1996 / IEEE / 1-55752-422-X
By: Wohlmuth, W.; Fay, P.; Caneau, C.; Adesida, I.;
Long-wavelength In/sub 0.53/Ga/sub 0.47/As metamorphic p-i-n photodiodes on GaAs substrates
2001 / IEEE
By: Adesida, I.; Lemonias, P.J.; Hoke, W.E.; Dumka, D.C.; Cueva, G.; Jang, J.H.;
High performance 0.35 /spl mu/m gate-length monolithic enhancement/depletion-mode metamorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMTs on GaAs substrates
2001 / IEEE
By: Adesida, I.; Cueva, G.; Lemonias, P.J.; Hoke, W.E.; Dumka, D.C.;
Monolithic integration of InAlAs/InGaAs enhancement and depletion (E/D)-mode metamorphic HEMTs on GaAs substrate
2001 / IEEE / 0-7803-7014-7
By: Lemonias, P.J.; Hoke, W.E.; Dumka, D.C.; Adesida, I.; Cueva, G.; Schwindt, R.;
The impact of a large bandgap drift region in long-wavelength metamorphic photodiodes
2001 / IEEE
By: Hoke, W.E.; Dumka, D.C.; Cueva, G.; Jang, J.H.; Adesida, I.; Fay, P.; Lemonias, P.J.;
Photoresponses of metamorphic double heterojunction photodiodes under high power optical illumination
2001 / IEEE / 0-7803-7105-4
By: Hoke, W.E.; Fay, P.; Adesida, I.; Cueva, G.; Jang, J.H.; Lemonias, P.J.;
RF microcoils patterned using microlithographic techniques for use as microsensors in NMR
1993 / IEEE / 0-7803-1377-1
By: Magini, R.L.; LaValle, L.; Peck, T.L.; Lauterbur, P.C.; Wheeler, B.C.; Adesida, I.;
High-speed MSM/HEMT and p-i-n/HEMT monolithic photoreceivers
2002 / IEEE
By: Caneau, C.; Fay, P.; Adesida, I.;
AlGaN/GaN HFETs for low noise applications
2001 / IEEE / 0-7803-6520-8
By: Lu, W.; Adesida, I.; Kumar, V.;
Metamorphic graded bandgap InGaAs-InGaAlAs-InAlAs double heterojunction p-i-I-n photodiodes
2002 / IEEE
By: Jae-Hyung Jang; Cueva, G.; Adesida, I.; Lemonias, P.J.; Fay, P.; Hoke, W.E.;
AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz
2002 / IEEE
By: Schwindt, R.; Lu, W.; Kumar, V.; Adesida, I.; Asif Khan, M.; Yang, J.; Simin, G.; Kuliev, A.;
Properties of metamorphic materials and device structures on GaAs substrates
2002 / IEEE / 0-7803-7581-5
By: Leoni, R.E.; Marsh, P.F.; Whelan, C.S.; Torabi, A.; Kennedy, T.D.; Jang, J.H.; Hsieh, K.C.; Hoke, W.E.; Chang, K.L.; Adesida, I.;
DC, RF, and microwave noise performances of AlGaN/GaN HEMTs on sapphire substrates
2002 / IEEE
By: Kumar, V.; Lu, W.; Adesida, I.; Piner, E.; Schwindt, R.;
Monolithic integration of In/sub 0.53/Ga/sub 0.47/As photodiodes and In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As HEMTs on GaAs substrates for long wavelength OEIC applications
2002 / IEEE / 0-7803-7447-9
By: Adesida, I.; Hoke, W.E.; Fay, P.; Sankaralingam, R.; Cueva, G.; Jang, J.H.;

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