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Topic: Ultra-thin Gate Dielectric Mosfet
Improved thermal stability and device performance of ultra-thin (EOT<10 /spl Aring/) gate dielectric MOSFETs by using hafnium oxynitride (HfO/sub x/N/sub y/)2002 / IEEE / 0-7803-7312-X
By: Lee, J.C.; Krishnan, S.; Goplan, S.; Nieh, R.; Chang Seok Kang; Choi, R.; Onishi, K.; Cho, H.-J.;