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Topic: Reversible Charge Trapping
Comparison of NMOS and PMOS stress for determining the source of NBTI in TiN/HfSiON devices [MOSFETs]2005 / IEEE / 0-7803-8803-8
By: Bersuker, G.; Lee, B.H.; Choi, R.; Harris, H.R.; Young, C.D.; Majhi, P.; Zeitzoff, P.; Mathews, K.; Sim, J.H.;