Your Search Results

Use materials about this topic in your textbook!

AcademicPub holds over eight million pieces of educational content - such as case studies and journal articles - for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!

Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Topic: Quantum Wells

Results

Thin Dielectric Spacer for the Monolithic Integration of Bulk Germanium or Germanium Quantum Wells With Silicon-on-Insulator Waveguides

2011 / IEEE
By: Kamins, T.I.; Ren, S.; Miller, D.A.B.;

Gain Recovery Acceleration by Enhancing Differential Gain in Quantum Well Semiconductor Optical Amplifiers

2011 / IEEE
By: Xi Huang; Cui Qin; Xinliang Zhang;

Ge/SiGe Quantum Well p-i-n Structures for Uncooled Infrared Bolometers

2011 / IEEE
By: Okyay, A.K.; Hanoglu, O.; Onbasli, M.C.; Yesilyurt, A.; Atar, F.B.;

Improved Performance of InGaN/GaN Light-Emitting Diodes With Thin Intermediate Barriers

2011 / IEEE
By: Yi-Keng Fu; Chun-Yen Chang; Bo-Chun Chen; Yan-Kuin Su; Yu-Hsuan Lu; Kai-Feng Huang;

Analysis of Defect-Related Localized Emission Processes in InGaN/GaN-Based LEDs

2012 / IEEE
By: Butendheich, R.; Humphreys, C.; Dandan Zhu; Trivellin, N.; Vaccari, S.; Leirer, C.; Zanoni, E.; Meneghini, M.; Meneghesso, G.; Hahn, B.;

Simple Electroabsorption Calculator for Designing 1310 nm and 1550 nm Modulators Using Germanium Quantum Wells

2012 / IEEE
By: Harris, J.S.; Kamins, T.I.; Wahl, P.; Rong, Y.; Miller, D.A.B.; Fei, E.T.; Roth, J.E.; Edwards, E.H.; Schaevitz, R.K.;

Investigation of Limits to the Optical Performance of Asymmetric Fabry-Perot Electroabsorption Modulators

2012 / IEEE
By: Edwards, E.H.; Audet, R.M.; Miller, D.A.B.; Wahl, P.;

Influence of Sawtooth Patterns on the Detection Properties of Quantum Well Infrared Photodetectors

2012 / IEEE
By: Carras, M.; Trinite, V.; Gueriaux, V.; Lhuillier, E.;

Three Operation Modes for Tb/s All-Optical Switching With Intersubband Transitions in InGaAs/AlAs/AlAsSb Quantum Wells

2012 / IEEE
By: Jackel, H.; Holzman, J.F.; Beck, M.; Kappeler, R.; Fedoryshyn, Y.; Faist, J.; Ping Ma; Kaspar, P.;

Analytical Modeling of Surface-Potential and Intrinsic Charges in AlGaN/GaN HEMT Devices

2012 / IEEE
By: Fjeldly, T.A.; Chauhan, Y.S.; Khandelwal, S.;

Carrier Recombination Dynamics Investigations of Strain-Compensated InGaAsN Quantum Wells

2012 / IEEE
By: Huang, J.Y.T.; Jeng-Ya Yeh; Menoni, C.S.; Pikal, J.M.; Mawst, L.J.; Patel, D.; Lifang Xu; Tansu, N.;

High Efficient Polarization-Matched InGaN/MgZnO Quantum Well Structures

2012 / IEEE
By: Yong-Hoon Cho; Doyeol Ahn; Seoung-Hwan Park;

Improvement of Epitaxy GaN Quality Using Liquid-Phase Deposited Nano-Patterned Sapphire Substrates

2012 / IEEE
By: Wu, Y.-C. S.; Chang, N.; Wang, B.-M.; Cho, H.-J.; Lin, B.-W.; Hsieh, C.-Y.;

A Superlattice Solar Cell With Enhanced Short-Circuit Current and Minimized Drop in Open-Circuit Voltage

2012 / IEEE
By: Sugiyama, M.; Watanabe, K.; Sodabanlu, H.; Wen, Y.; Wang, Y.; Nakano, Y.;

Efficiency Enhancement of Blue InGaN Light-Emitting Diodes With Shallow First Well

2012 / IEEE
By: Yen-Kuang Kuo; Tsun-Hsin Wang;

Performance Enhancement of Near-UV Light-Emitting Diodes With an InAlN/GaN Superlattice Electron-Blocking Layer

2012 / IEEE
By: Jun Ma; Yi-An Yin; Xue-Liang Zhu; Yun-Yan Zhang;

Photocurrent Generation by Two-Step Photon Absorption With Quantum-Well Superlattice Cell

2012 / IEEE
By: Morioka, T.; Watanabe, K.; Wang, Y.; Sugiyama, M.; Nakano, Y.; Okada, Y.;

Cell growth and attachment to AlGaN surfaces for biosensor applications

2010 / IEEE / 978-1-4244-5261-3
By: Podolska, A.; Nener, B.D.; Parish, G.; Pfleger, K.D.G.; Kocan, M.; Kocan, M.; Seeber, R.M.;

Electron emission Si-based resonant-tunneling diode

2011 / IEEE / 978-3-00-035081-8
By: Goncharuk, N.; Evtukh, A.; Mimura, H.; Litovchenko, V.;

Demonstration of a 34 nm monolithic continuously tunable VCSEL at 1.55 �m combined with liquid crystal

2011 / IEEE / 978-3-8007-3356-9
By: Dupont, L.; Paranthoen, C.; Castany, O.; Le Corre, A.; Levallois, C.; Durand, O.; Chevalier, N.; Gauthier, J.P.; Shuaib, A.;

2011 / IEEE / 978-1-61284-244-8

The simple theoretical analysis of the specific heat capacity in nano materials

2011 / IEEE / 978-1-4577-0378-2
By: Roy, S.S.;

Carrier injection in GaAsPN/GaPN quantum wells on Silicon

2011 / IEEE / 978-3-8007-3356-9
By: Jancu, J.-M.; Durand, O.; Burin, J.-P.; Richard, S.; Letoublon, A.; Perrin, M.; Elias, G.; Bondi, A.; Guo, W.; Thanh, T.N.; Robert, C.; Cornet, C.; Le Corre, A.; Ponchet, A.; Bertru, N.; Folliot, H.; Loualiche, S.; Even, J.;

A simulation of the applied bias effect of tunnelling probability in quadruple barrier Si/SiO2 system

2011 / IEEE / 978-1-4577-0752-0
By: Nuryadi, R.; Purwiyanti, S.; Hartanto, D.;

Theoretical analysis of FWM by ISBT in InGaAs/AlAsSb QWs for wavelength conversion

2011 / IEEE / 978-1-61284-878-5
By: Gozu, S.; Ogasawara, T.; Akimoto, R.; Kuwatsuka, H.; Ishikawa, H.; Hasama, T.; Mozume, T.;

A flexible, plane-wave-based formulation of continuum elasticity and multiband k�p models

2011 / IEEE / 978-1-61284-878-5
By: Schulz, S.; Marquardt, O.; Neugebauer, J.; Hickel, T.; Boeck, S.; Freysoldt, C.; O'Reilly, E.P.;

Cantilever actuator processing to control photoluminescence of quantum wells coupled across nanoscale air gaps

2011 / IEEE / 978-1-4577-0336-2
By: Saarinen, M.J.; Chan, W.S.; Talghader, J.J.;

Computational study of carrier injection in III-nitride core-shell nanowire-LEDs

2011 / IEEE / 978-1-4577-0430-7
By: Romer, F.; Deppner, M.; Strassburg, M.; Bergbauer, W.; Witzigmann, B.; Waag, A.; Neumann, R.; Ledig, J.;

Exciton effects in multilayer super lattice

2011 / IEEE / 978-966-335-357-9
By: Pashchenko, A.G.; Vantsan, V.M.;

Quantum dot device

2011 / IEEE / 978-1-55752-932-9
By: Coleman, J.J.;

The effects of tensile-strain conditions on doping density requirements for Ge-based injection lasers

2011 / IEEE / 978-1-4244-8340-2
By: Kelsall, R.W.; Ikonic, Z.; Aldaghri, O.;

Ge(111)-fin light-emitting diodes

2011 / IEEE / 978-1-4244-8340-2
By: Ido, T.; Sugawara, T.; Mine, T.; Miura, M.; Oda, K.; Saito, S.-I.; Tani, K.;

Heterogeneous THz quantum cascade lasers: Broadband operation

2011 / IEEE / 978-1-4577-0509-0
By: Ritchie, D.A.; Beere, H.E.; Tignon, J.; Dhillon, S.S.; Freeman, J.R.; Madeo, J.; Brewer, A.; Cavalie, P.;

Enhancing GaInNAs/GaAs single quantum well emission wavelength by utilizing GaNAs step graded layer

2011 / IEEE / 978-1-61284-846-4
By: Alias, M.S.; Mitani, S.M.; Exhan, F.M.; Manaf, A.A.;

Extraordinary carrier multiplication in GaAs MQWs induced by intense terahertz pulse

2011 / IEEE / 978-1-4577-0509-0
By: Tanaka, K.; Kadoya, Y.; Tani, S.; Shirai, M.; Shinokita, K.; Hirori, H.;

The free-electron laser as a tool for time-resolved, nonlinear, and near-field spectroscopy

2011 / IEEE / 978-1-4577-0509-0
By: Helm, M.;

160 GHz 1.55 �m colliding-pulse mode-locked AlGaInAs/InP laser with reduced optical overlap

2011 / IEEE / 978-1-4244-8939-8
By: Bryce, A.C.; Haji, M.; Lianping Hou; Marsh, J.H.;

Thermal emission control by simultaneous manipulation of electronic and photonic states

2011 / IEEE / 978-1-4244-8939-8
By: Asano, T.; De Zoysa, M.; Noda, S.; Inoue, T.; Oskooi, A.;

Nonlinearity study of double and single channel GaAs HEMTs

2011 / IEEE / 978-2-87487-023-1
By: Kyabaggu, P.; Mohammed-Ali, M.; Rezazadeh, A.A.; Sinulingga, E.;

Multi band sensing with arsenides and nitrides

2011 / IEEE / 978-1-4244-8939-8
By: Perera, A.G.U.;

Optimization of d-doped AlInAs/InGaAs HEMT performance using spacer layer and d-doping

2011 / IEEE / 978-1-4577-1107-7
By: Siddiqui, M.J.; Aziz, F.;

Multiple quantum well top cells for multijunction concentrator solar cells

2011 / IEEE / 978-1-4244-9965-6
By: Lumb, M.; Dobbin, A.L.; Fuhrer, M.; Ekins-Daukes, N.J.; Rees, V.; Airey, R.J.; Adams, J.G.J.; Connolly, J.P.; Browne, B.C.; Barnham, K.W.J.; Kan-Hua Lee; Tibbits, T.N.D.; Roberts, J.S.; Mazzer, M.;

Microscopic study on the carrier distribution in optoelectronic device structures: Experiment and modeling

2011 / IEEE / 978-0-8194-8961-6
By: Liu, Fengqi; Huang, Wenchao; Li, Tianxin; Li, Zhifeng; Xia, Hui; li, Lu; Wei, Peng; Deng, Honghai; Wang, Shaowei;

Quantum well double barrier resonant tunneling structures for selective contacts of hot carrier solar cells

2011 / IEEE / 978-1-4244-9965-6
By: Okada, Y.; Hijikata, Y.; Yagi, S.; Yaguchi, H.;

Photocurrent generation by two-step photon absorption with quantum-well superlattice cell

2011 / IEEE / 978-1-4244-9965-6
By: Morioka, T.; Watanabe, K.; Yunpeng Wang; Sugiyama, M.; Nakano, Y.; Okada, Y.;

Ultrafast carrier relaxation and nonequilibrium phonons in hot carrier solar cells

2011 / IEEE / 978-1-4244-9965-6
By: Honsberg, C.; Goodnick, S.M.;

Hot carrier solar cells: Controlling thermalization in ultra thin devices

2011 / IEEE / 978-1-4244-9965-6
By: Colin, C.; Guillemoles, J.; Laribi, S.; Lombez, L.; Le Bris, A.; Christol, P.; Collin, S.; Greffet, J.; Boissier, G.; Esteban, R.; Laroche, M.; Pelouard, J.;

Enhancing light output of GaN-based light-emitting diodes with nanoparticle-assembled on-top layers

2012 / IEEE / 978-1-4673-1124-3
By: Peng Mao; Yan Shen; Xi Chen; Ling Sun; Cheng Zheng; Min Han;

Over 30% efficiency triple-junction GainP/GaAs/Ge quantum well solar cells

2011 / IEEE / 978-1-4244-9965-6
By: Chaogang Lou; Rubin Liu; Qiang Sun; Shuai Wang; Wei Gao;

Surface plasmon interaction with amplifying MQWs in multilayer kretschmann structure: Wavelength-scale analysis by the method of single expression

2012 / IEEE / 978-1-4673-2229-4
By: Baghdasaryan, H.V.; Marciniak, M.; Hovhannisyan, T.T.; Knyazyan, T.M.;

Enhanced nanocavity Q-factor via slow light propagation and nonlinear effects

2012 / IEEE / 978-1-4673-2229-4
By: Dumeige, Y.; Yiacomotti, A.M.; Brunstein, M.; Bencheikh, K.; Grinberg, P.; Levenson, A.;

Photocurrent Calculation of Intersubband Transitions to Continuum-Localized States in GaAs/AlGaAs Multiquantum Wells for Mid-Infrared Photodetector

2013 / IEEE
By: Penello, G. M.; Souza, P. L.; Pires, M. P.; Maialle, M. Z.; Degani, M. H.;

Bandgap wavelength shift in quantum well intermixing using different SiO2 masks for photonic integration

2013 / IEEE
By: Nishiyama, Nobuhiko; Amemiya, Tomohiro; Shindo, Takahiko; Futami, Mitsuaki; Yamahara, Yoshiaki; Lee, Jieun; Arai, Shigehisa;

Spin precession induced by an effective magnetic field in a two-dimensional electron gas

2008 / American Institute of Physics
By: Genhua Liu; Yonghai Chen; Caihong Jia; Zhanguo Wang;

An investigation of MWIR, AlInSb LEDs based on double heterostructures and multiple quantum wells

2014 / IEEE
By: Ironside, Charles N.; Sorel, Marc; MacGregor, Calum; Thayne, Iain G.; Bulashevich, Kirill; Steer, Matthew J.; Meriggi, Laura; Ding, Ying;

EXAFS study of intermixing in GaN/AlN quantum wells

2014 / IEEE
By: Erenburg, S.; Trubina, S.; Mansurov, V.; Malin, T.; Alexandrov, I.; Zhuravlev, K.; Pecz, B.; Dobos, L.;

Can a Hot-Carrier Solar Cell also be an Efficient Up-converter?

2015 / IEEE
By: Farrell, D.J.; Okada, Y.; Sugiyama, M.; Wang, Y.; Sodabanlu, H.;

Mid-Infrared Interband Cascade Photodetectors With Different Absorber Designs

2015 / IEEE
By: Tian, Z.; Krishna, S.;

Effect of Barrier Thickness on Carrier Transport Inside Multiple Quantum Well Solar Cells Under High-Concentration Illumination

2015 / IEEE
By: Fujii, H.; Yanwachirakul, W.; Nakano, Y.; Sugiyama, M.; Watanabe, K.; Toprasertpong, K.;

Performance analysis of III–V based long wavelength QWIP

2013 / IEEE
By: Billaha, Md. Aref; Das, Mukul K.;

Epitaxial Growth and Characterization of Self-Doping Si1- x Ge x/Si Multi-Quantum Well Materials

2014 / IEEE
By: Dong, T.; Jiang, B.; Wang, K.; He, Y.; Su, Y.;

Ultrahigh-resolution direct observation of mini-bands formed in InGaAs/AlGaAs superlattice

2013 / IEEE
By: Shimura, Daiki; Ujihara, Toru; Tagawa, Miho; Sakai, Takenobu; Kimura, Shin-ichi; Ichihashi, Fumiaki; Ito, Takahiro; Kuwahara, Makoto; Harada, Shunta; Nishitani, Kenji; Matsunami, Masaharu;

GaSb/InGaAs quantum dot-well solar cells

2013 / IEEE
By: Hubbard, Seth M.; Navruz, Tugba S.; Bittner, Zachery; Liang, Baolai L.; Laghumavarapu, Ramesh B.; Huffaker, Diana L.; Norman, Andrew;

Rigorous simulation of InAlGaAs-InGaAs bulk and quantum well interband tunnel junctions for multi-junction solar cells

2013 / IEEE
By: Aeberhard, Urs;

CdO/ZnO multiple quantum wells as components for next generation solar cells

2013 / IEEE
By: Galeckas, Augustinas; Venkatachalapathy, Vishnukanthan; Kuznetsov, Andrej Yu.;

Towards high efficiency multi-junction solar cells grown on InP Substrates

2013 / IEEE
By: Gonzalez, M.; Lumb, M. P.; Walters, R. J.; Ekins-Daukes, N.; Fuhrer, M.; Adams, J. G. J.; Ponce, A.; Bahena, D.; Delgado-Gonzalez, F. J.; Molina, S. I.; Jenkins, P. P.; Maximenko, S.; Meyer, J.; Yakes, M. K.; Bailey, C. G.; Tischler, J. G.; Hoheisel, R.; Abell, J.; Vurgaftman, I.;

Strain balanced double quantum well tunnel junctions

2013 / IEEE
By: Walters, Robert J.; Gonzalez, Maria; Bailey, Christopher G.; Lumb, Matthew P.; Yakes, Michael K.;

Performance of an improved one-way error reconciliation protocol based on key redistribution

2014 / IEEE
By: Jingling, Li; Feng, Zhao;

Nitride-Based Blue Light-Emitting Diodes Grown With InN/GaN Matrix Quantum Wells

2014 / IEEE
By: Chen, Y. A.; Chang, L. C.; Fu, Y. K.; Kuo, C.-H.;

Ultra-strong light-matter interaction with mid-infrared metamaterials

2013 / IEEE
By: Brener, I.; Capolino, F.; Sinclair, M. B.; Klem, J. F.; Liu, S.; Montano, I.; Campione, S.; Benz, A.;

Influence of the metamaterial geometry on ultra-strong light-matter interaction

2013 / IEEE
By: Brener, I.; Capolino, F.; Sinclair, M. B.; Klem, J. F.; Liu, S.; Montano, I.; Campione, S.; Benz, A.;

Strain-balanced quantum wells as an efficiency booster for III–V solar cells

2014 / IEEE
By: Sugiyama, Masakazu;

Effect of irradiation on gallium arsenide solar cells with multi quantum well structures

2014 / IEEE
By: Maximenko, S. I.; Lumb, M. P.; Walters, R. J.; Jenkins, P. P.; Sato, S. -i.; Ohshima, T.; Imaizumi, M.; Tibbits, T. N. D.; Messenger, S.R.; Scheiman, D. A.; Hoheisel, R.; Gonzalez, M.;

GaInN/GaN - Ni/Au transparent conducting oxide Schottky barrier solar cells

2014 / IEEE
By: Chern, Kevin T.; Guido, Louis J.; Ciarkowski, Timothy A.; Allen, Noah P.; Laboutin, Oleg A.; Welser, Roger E.; Elarde, Victor C.;

Dynamics and two photon intersubband absorption of photovoltaic quantum structures

2014 / IEEE
By: Sippel, P.; Schwarzburg, K.; Eichberger, R.; Hannappel, T.; Masselink, W. T.; Semtsiv, M. P.; Heitz, S.; Elagin, M.; Borgwardt, M.;

Elements of modelling and design of multi-quantum well solar cells

2014 / IEEE
By: Alonso-Alvarez, Diego; Ekins-Daukes, Ned; Thomas, Tomos; Fuhrer, Markus;

Tunable superlattice p-i-n photodetectors: characteristics, theory, and application

1988 / IEEE
By: Andrekson, P.A.; Larsson, A.; Yariv, A.; Eng, S.T.;

p-channel quantum-well heterostructure MI/sup 3/SFET

1988 / IEEE
By: Wright, S.L.; Tiwari, S.; Kiehl, R.A.; Olson, M.A.;

Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistors with very high transconductance

1988 / IEEE
By: Shur, M.; Ruden, P.P.; Daniels, R.R.; Arch, D.K.; Nohava, T.E.; Grider, D.;

A triple-well resonant tunneling diode for multiple-valued logic application

1988 / IEEE
By: Takahashi, S.; Mizuta, H.; Tanoue, T.;

New resonant-tunneling devices with multiple negative resistance regions and high room-temperature peak-to-valley ratio

1988 / IEEE
By: Sivco, D.; Capasso, F.; Sen, S.; Cho, A.Y.;

Light scattering determinations of band offsets in semiconductor heterostructures

1988 / IEEE
By: Pinczuk, A.; Menendez, J.;

Carrier dynamics and recombination mechanisms in staggered-alignment heterostructures

1988 / IEEE
By: Wilson, B.A.;

Band-mixing effects and excitonic optical properties in GaAs quantum wire structures-comparison with the quantum wells

1988 / IEEE
By: Coldren, L.A.; Suemune, I.;

AlGaAs/InGaAs/GaAs quantum-well power MISFET at millimeter-wave frequencies

1988 / IEEE
By: Matyi, R.J.; Kim, B.; Tserng, H.Q.; Wurtele, M.;

Gain spectra of quantum wires with inhomogeneous broadening

1989 / IEEE
By: Yariv, A.; Vahala, K.; Zarem, H.;

A high-current pseudomorphic AlGaAs/InGaAs double quantum-well MODFET

1988 / IEEE
By: Wang, G.W.; Eastman, L.F.; Radulescu, D.C.; Chen, Y.K.;

Stability of strained quantum-well field-effect transistor structures

1988 / IEEE
By: Hills, C.R.; Klem, J.F.; Biefeld, R.M.; Dawson, L.R.; Zipperian, T.E.; Peercy, P.S.; Myers, D.R.; Jones, E.D.; Tsao, J.Y.; Dodson, B.W.;

Implementation of neural networks using quantum well based excitonic devices-device requirement studies

1988 / IEEE
By: Songched Hong; Singh, J.; Sahai, R.; Bhattacharya, P.K.;

Finite-element analysis of quantum wells of arbitrary semiconductors with arbitrary potential profiles

1989 / IEEE
By: Koshiba, M.; Shimizu, A.; Nakamura, K.; Hayata, K.;

Resonant periodic gain surface-emitting semiconductor lasers

1989 / IEEE
By: Osinski, M.; Brueck, S.R.J.; Raja, M.Y.A.; Hammons, B.E.; Brennan, T.M.; McInerney, J.G.; Schaus, C.F.;

p-channel FET based on p/n double-quantum-well heterostructure

1989 / IEEE
By: Yates, J.; Wright, S.L.; Kiehl, R.A.; Olson, M.A.;

High-transconductance insulating-gate InP/InGaAs buried p-buffer DH-MODFETs grown by MOVPE

1989 / IEEE
By: Logan, R.A.; Tanbun-Ek, T.; Temkin, H.; Chen, Y.-K.; Nottenburg, R.N.;

Single-interface and quantum-well heterostructure MISFETs

1989 / IEEE
By: Kiehl, R.A.;

Complementary p- and n-channel quantum-well MI/sup 3/SFETs

1988 / IEEE
By: Yates, J.; Heiblum, M.; Wright, S.L.; Yoh, K.; Olson, M.A.; Kiehl, R.A.; Warren, A.C.;

Color center lasers passively mode locked by quantum wells

1989 / IEEE
By: Bar-Joseph, I.; Soccolich, C.E.; Sunderman, E.R.; Islam, M.N.; Miller, B.I.; Chang, T.Y.; Sauer, N.;

Femtosecond excitonic optoelectronics

1989 / IEEE
By: Goossen, K.W.; Henry, J.E.; Knox, W.H.; Schmitt-Rink, S.; Tell, B.; Li, K.D.; Gossard, A.C.; Chemla, D.S.; Miller, D.A.B.; English, J.;

Pseudomorphic bipolar quantum resonant-tunneling transistor

1989 / IEEE
By: Randall, J.N.; Frensley, W.R.; Seabaugh, A.C.; Matyi, R.J.; Farrington, D.L.; Reed, M.A.;

Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistors

1989 / IEEE
By: Grider, D.E.; Daniels, R.R.; Arch, D.K.; Shur, M.; Ruden, P.P.; Nohava, T.E.;

Stimulated emission from monolayer thick quantum-well heterostructures

1989 / IEEE
By: Kolbas, R.M.; Hiseh, K.Y.; Lee, J.H.;

Next Page