Your Search Results

Use materials about this topic in your textbook!

AcademicPub holds over eight million pieces of educational content - such as case studies and journal articles - for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!

Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Topic: Ohmic Contacts

Results

Three-Mode Behavior of Spin-Transfer Vortex Oscillators With Dynamic Polarizer

2011 / IEEE
By: Xiao Lei Wang; Ning Wang; Ruotolo, A.; Kwok, D.T.K.;

Highly Reliable Ohmic Contacts to N-Polar n-Type GaN for High-Power Vertical Light-Emitting Diodes

2011 / IEEE
By: June-O Song; Sang Youl Lee; Joon-Woo Jeon; Tae-Yeon Seong;

Reduction of Impact Ionization in GaAs-Based Planar Gunn Diodes by Anode Contact Design

2012 / IEEE
By: Khalid, A.; Montes, M.; Stephen, A.; Dunn, G.; Li, C.; Kuball, M.; Hopper, R.H.; Oxley, C.H.; Cumming, D.;

Carrier Transport Mechanism of Ni/Ag/Pt Contacts to p-Type GaN

2012 / IEEE
By: Hyunsoo Kim; Kwang-Soon Ahn; Youngjun Park;

A Ku-band Dual-SPDT RF-MEMS Switch by Double-Side SOI Bulk Micromachining

2011 / IEEE
By: Toshiyoshi, H.; Fujita, H.; Kawasaki, S.; Seita, H.; Sun, W.; Yamane, D.;

Low-Temperature Bonding of GaN on Si Using a Nonalloyed Metal Ohmic Contact Layer for GaN-Based Heterogeneous Devices

2012 / IEEE
By: Higurashi, E.; Suga, T.; Fukunaga, T.;

Simulating Downscaling of Ohmic Contacts on Wide-Bandgap Low-Resistivity Semiconductors

2012 / IEEE
By: Ruzin, A.;

Self-Aligned N-Polar GaN/InAlN MIS-HEMTs With Record Extrinsic Transconductance of 1105 mS/mm

2012 / IEEE
By: Dasgupta, S.; Nidhi; Mishra, U.K.; Speck, J.S.; Jing Lu;

Determination of Electrical Contact Resistivity in Thermoelectric Modules (TEMs) From Module-Level Measurements

2012 / IEEE
By: Kolodner, P.; Salamon, T.; Annapragada, S.R.; Garimella, S.V.; Hodes, M.;

Electrical Properties of ITO/Crystalline-Silicon Contact at Different Deposition Temperatures

2012 / IEEE
By: Tucci, M.; Caputo, D.; de Cesare, G.;

Ultrathin Body GaN-on-Insulator Quantum Well FETs With Regrown Ohmic Contacts

2012 / IEEE
By: Faria, F.; Yuanzheng Yue; Zongyang Hu; Verma, J.; Jia Guo; Ronghua Wang; Yu Cao; Jena, D.; Huili Xing; Guowang Li; Kosel, T.; Kelly, M.;

Characteristics of novel titanium oxide thin film used for nonvolatile memories

2010 / IEEE / 978-1-4244-5261-3
By: Chao Zhang; Xuan Zhu; Yaqing Chi; He Sun; Liang Fang; Yong Li;

Intrinsic DC operation and performance potential of 50nm gate length hydrogen-terminated diamond field effect transistors

2011 / IEEE / 978-1-61284-244-8
By: McLelland, H.; Fox, O.J.L.; Moran, D.A.J.; May, P.W.; Russell, S.;

Development of self-aligned T-gate pHEMT technology

2011 / IEEE / 978-1-61284-795-5
By: Gavrilova, A.M.; Fedosova, M.A.; Arykov, V.S.; Erofeev, E.V.;

Use of self-aligned technology in GaAs scotty diode fabrication

2011 / IEEE / 978-1-61284-795-5
By: Yunusov, I.V.; Arykov, V.S.; Gavrilova, A.M.;

A novel retention-enhanced structure and a reset transient model for energy-efficient electrochemical conducting bridge resistive memory

2011 / IEEE / 978-1-4577-0378-2
By: Kuang-Yeu Hsieh; Feng-Ming Lee; Yu-Yu Lin; Chih-Yuan Lu; Wei-Chih Chien; Hsiang-Lan Lung; Ming-Hsiu Lee; Yi-Chou Chen;

Interface states at high- : /InGaAs interface: H2O vs. O3 based ALD dielectric

2011 / IEEE / 978-1-61284-244-8
By: Chen, Y.T.; Veksler, D.; Madan, H.; Datta, S.; Bersuker, G.; Goel, N.; Huang, J.;

Analysis of certain methods for determining contact resistivity

2011 / IEEE / 978-1-61284-795-5
By: Kalinin, S.V.; Smirnov, I.A.;

A positive exploitation of ESD events: Micro-welding induction on ohmic MEMS contacts

2011 / IEEE / 978-1-58537-193-8
By: Meneghesso, G.; Iannacci, J.; Tazzoli, A.;

Discrete Analysis of Gold Surface Asperities Deformation under Spherical Nano-Indentation Towards Electrical Contact Resistance Calculation

2011 / IEEE / 978-1-61284-651-4
By: Mandrillon, V.; Duvivier, P.-Y.; Arrazat, B.; Inal, K.;

Self-aligned T-gate pHEMT

2011 / IEEE / 978-966-335-357-9
By: Arykov, V.S.; Erofeev, E.V.; Gavrilova, A.M.; Fedosova, M.A.;

Al thickness influence on optimal annealing temperature of Ta/Ti/Al/Mo/Au ohmic contacts to AlGaN/GaN

2011 / IEEE / 978-966-335-357-9
By: Velikovskiy, L.E.; Osipov, K.Y.; Kagadei, V.A.;

Use of self-aligned technology in GaAs diode fabrication

2011 / IEEE / 978-966-335-357-9
By: Gavrilova, A.M.; Yunusov, I.V.; Arykov, V.S.;

Model of a voltage driven capacitive coupled micro electro-mechanical RF switch

2011 / IEEE / 978-2-35500-015-7
By: Tschanun, W.; Heeb, P.; Buser, R.;

Integrating low temperature aligned carbon nanotubes as vertical interconnects in Si technology

2011 / IEEE / 978-1-4577-1516-7
By: van der Cingel, J.; Derakhshandeh, J.; Ishihara, R.; Vollebregt, S.; Beenakker, C.I.M.; Schellevis, H.;

The Ohmic contact of n-GaSb with a Mo diffusion barrier

2011 / IEEE / 978-1-4577-0796-4
By: Liu Guojun; Li Juncheng; Wang Yue; Wang Yuxia; Wei Zhipeng; Li Zhanguo; An Ning;

Application of graphene in tandem organic solar cells

2011 / IEEE / 978-1-4577-2141-0
By: Kian Ping Loh; Man-Fai Ng; Yu Wang; Shi Wun Tong;

The influence of field-dependent carrier mobility and permittivity on space-charge-limited leakage current characteristics in high dielectric constant and ferroelectric thin films

2011 / IEEE / 978-1-4577-1431-3
By: Li, J.C.; Tang, M.H.; Xiao, Y.G.;

AMPS-1D modeling of P3HT/PCBM bulk-heterojunction solar cell

2011 / IEEE / 978-1-4244-9965-6
By: Khogali, A.; Omer, B.M.; Pivrikas, A.;

XPS as characterization tool for PV: From the substrate to complete III-V multijunction solar cells

2011 / IEEE / 978-1-4244-9965-6
By: Gabas, M.; Ramos-Barrado, J.R.; Bijani, S.; Palanco, S.; Algora, C.; Lopez-Escalante, M.C.; Garcia, I.; Barrigon, E.; Rey-Stolle, I.; Galiana, B.;

Compatibility of the alternative seed layer (ASL) process with mono-Si and poly-Si substrates patterned by laser or wet etching

2011 / IEEE / 978-1-4244-9965-6
By: Munoz, K.; Anh Viet Nguyen; Michaelson, L.; Haldar, P.; Efstathiadis, H.; Gallegos, A.; Rane-Fondacaro, M.V.; Tyson, T.; Wang, J.C.;

Ohmic contacts to p-type doped ZnO

2012 / IEEE / 978-1-4577-0798-8
By: Saw, K.G.; Hassan, Z.; Tneh, S.S.; Chuah, L.S.; Yam, F.K.;

Nanogap MEMS micro-relay with 70 ns switching speed

2012 / IEEE / 978-1-4673-0325-5
By: Courtade, F.; Vendier, O.; Blondy, P.; Guines, C.; Pothier, A.; Verger, A.;

Cyclic evolution of bouncing for contacts in commercial RF MEMS switches

2012 / IEEE / 978-1-4673-0325-5
By: Wei Yang; Fruehling, A.; Peroulis, D.;

Low temperature stacked electrodes for flexible crystalline semiconductor thin film solar cells

2011 / IEEE / 978-1-4244-9965-6
By: Rui Li; Weiquan Yang; Weidong Zhou; Zhenqiang Ma;

Photonic crystal resonant cavity for thermophotovoltaic applications

2011 / IEEE / 978-1-4244-9965-6
By: Vandervelde, T.E.; Shemelya, C.;

A SiC metallization scheme using an ALD protective layer for harsh environment devices

2012 / IEEE / 978-1-4673-0325-5
By: Carraro, C.; Junqin Zhang; Vincent, M.; Maboudian, R.;

Effects of ohmic metal thickness on drain current capability of AlGaN/GaN HEMTs

2012 / IEEE / 978-1-4673-0836-6
By: Ogasawara, M.; Kuzuhara, M.; Tokuda, H.; Kodama, S.;

Dislocation induced nonuniform surface morphology of Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN HEMTs

2012 / IEEE / 978-1-4673-1895-2
By: Jianhui Wang; Guoguo Liu; Ke Wei; Xin Kong; Xinyu Liu;

Metal contacts to MoS2: A two-dimensional semiconductor

2012 / IEEE / 978-1-4673-1164-9
By: Gu, J.J.; Liu, H.; Neal, A.T.; Ye, P.D.;

RTD-based THz-MIC by Film-Diode technology

2012 / IEEE / 978-1-4673-1088-8
By: Sydlo, Cezary; Cojocari, Oleg; Meissner, Peter; Feiginov, Michael;

Solar-Blind p-i-n Photodetectors Formed on ${\rm SiO}_{2}$-Patterned n-GaN Templates

2012 / IEEE
By: Ming-Lun Lee; Shang-Ju Tu; Yu-Hsiang Yeh;

Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High $f_{\max}$

2012 / IEEE
By: Jing Lu; Dasgupta, S.; Denninghoff, D.J.; Mishra, U.K.; Keller, S.;

GaN-Based LEDs With Contact-Transferred and Mask-Embedded Lithography and In-Situ N$_{2}$ Treatments

2012 / IEEE
By: Shih-Chang Shei; Chi-Fu Yu;

MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$

2012 / IEEE
By: Xiang Gao; Shiping Guo; Ronghua Wang; Yu Cao; Faria, F.; Guowang Li; Jia Guo; Huili Xing; Jena, D.; Wistey, M.; Verma, J.; Saunier, P.; Schuette, M.; Ketterson, A.; Beam, E.;

InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

2012 / IEEE
By: Huili Xing; Yuanzheng Yue; Jena, D.; Fay, P.; Snider, G.; Kosel, T.; Shiping Guo; Xiang Gao; Bo Song; Tian Fang; Faria, F.; Ronghua Wang; Guowang Li; Sensale-Rodriguez, B.; Jia Guo; Zongyang Hu;

Scaled Self-Aligned N-Polar GaN/AlGaN MIS-HEMTs With $f_{T}$ of 275 GHz

2012 / IEEE
By: Dasgupta, S.; Nidhi; Mishra, U.K.; Speck, J.S.; Lu, J.;

$V_{T} - V_{\rm SUB}$ Characterization of AlGaN/GaN HFET With p-Type Body Layer

2011 / IEEE
By: Jin-Ping Ao; Sugimoto, M.; Kikuta, D.; Cheng-Yu Hu; Ohno, Y.;

Fabrication of a $\hbox{TiN}_{x}/\hbox{Ni/Au}$ Contact on ZnO Films With High Thermal Stability and Low Resistance

2011 / IEEE
By: Chai, J.W.; Ong, J.L.T.; Chi, D.Z.; Yang, M.; Wang, S.J.; Chua, S.J.; Feng, Y.P.; Pan, J.S.; Zhang, Z.;

A Rigorous Model for Through-Silicon Vias With Ohmic Contact in Silicon Interposer

2013 / IEEE
By: Swaminathan, M.; Xie, J.; Yang, D.-C.; Li, E.-P.; Wei, X.-C.;

Dark carrier recombination in organic solar cell

2008 / American Institute of Physics
By: Ying-Xuan Wang; Shin-Rong Tseng; Hsin-Fei Meng; Kuan-Chen Lee; Chiou-Hua Liu; Sheng-Fu Horng;

Resistive switching characteristics and mechanism of thermally grown WOx thin films

2011 / American Institute of Physics
By: Kuyyadi P. Biju; Xinjun Liu; Manzar Siddik; Seonghyun Kim; Jungho Shin; Hyunsang Hwang; Insung Kim; Alex Ignatiev;

Resistive switching characteristics and mechanism of thermally grown WOx thin films

2011 / American Institute of Physics
By: Kuyyadi P. Biju; Xinjun Liu; Manzar Siddik; Seonghyun Kim; Jungho Shin; Hyunsang Hwang; Insung Kim; Alex Ignatiev;

Ohmic and rectifying contacts for ultraviolet photodiode based on AlGaN solid solutions

2015 / IEEE
By: Mikhailov, I. I.; Tarasov, S. A.; Lamkin, I. A.; Andreev, M. Y.; Solomonov, A. V.;

Top-down approach for fabricating InP nanowires with ohmic metal contacts

2014 / IEEE
By: Naureen, S.; Karouta, F.; Jagadish, C.; Tan, H. H.; Lysevych, M.; Vora, K.; Shahid, N.;

Design and Characterization of Integrated Submillimeter-Wave Quasi-Vertical Schottky Diodes

2015 / IEEE
By: Alijabbari, N.; Weikle, R. M.; Bauwens, M. F.;

Recess-Free Nonalloyed Ohmic Contacts on Graded AlGaN Heterojunction FETs

2015 / IEEE
By: Bajaj, S.; Krishnamoorthy, S.; Park, P.S.; Rajan, S.; Nath, D.N.;

Ultrathin GaAs Solar Cells With a Silver Back Mirror

2015 / IEEE
By: Vandamme, N.; Collin, S.; Guillemoles, J.; Bardou, N.; Chen, H.; Cattoni, A.; Lemaitre, A.; Behaghel, B.; Gaucher, A.; Dupuis, C.;

Zero-bias InGaAs Schottky barrier diode array for terahertz imaging applications

2014 / IEEE
By: Han, Sang-Pil; Ko, Hyunsung; Park, Kyung-Hyun; Lee, Il-Min; Lee, Dong Hun; Kim, Dae Yong; Yoon, Young-Jong; Park, Jeong-Woo;

High performance n+/p junction technology for high mobility Ge nMOSFET

2014 / IEEE
By: Yi, Shih-Han; Chin, Albert;

A low-resistance spiking-free n-type ohmic contact for InP membrane devices

2014 / IEEE
By: Smit, Meint; Roelkens, Gunther; Ambrosius, Huub; van der Tol, Jos; Sander, Kitty; Augstin, Luc; Jiao, Yuqing; Shen, Longfei;

Nitrogen doped chalcopyrites as contacts to CdTe photovoltaics

2013 / IEEE
By: Wang, Z.; Erickson, T.; Rockett, A.; Collins, R. W.; Koirala, P.; Marsillac, S.; Aryal, K.;

Ultra-low resistance NiGeAu and PdGeAu ohmic contacts on N-GaSb grown on GaAs

2013 / IEEE
By: Rahimi, Nassim; Aragon, Andrew A.; Romero, Orlando S.; Shima, Darryl M.; Rotter, Tom J.; Balakrishnan, Ganesh; Mukherjee, Sayan D.; Lester, Luke F.;

GaAsP single nanowire solar cells grown on silicon exhibiting large Voc increase at multiple suns

2013 / IEEE
By: Liu, Huiyun; Jorgensen, Henrik I.; Holm, Jeppe V.; Aagesen, Martin;

Single-actuator shunt-series RF-MEMS switch

2014 / IEEE
By: Bey, Yusha; Yuhao Liu; Xiaoguang Liu;

On the contact resistance of single-walled carbon nanotubes in RF devices

2014 / IEEE
By: Elkadi, Asmaa; El-Ghazaly, Samir M.;

A Gold Free Aluminum Metalized GaAs PHEMT With Copper Based Air Bridges and Backside

2013 / IEEE
By: Erofeev, E. V.; Kazimirov, A. I.; Ishutkin, S. V.; Kagadei, V. A.; Anishchenko, E. V.; Arykov, V. S.;

BCl3 plasma treatment effect on ohmic contact resistance in GaN-based high electron mobility transistors

2014 / IEEE
By: Smirnov, Alexander S.; Kobelev, Anton A.; Andrianov, Nikolay A.; Barsukov, Yuri V.;

Nitrogen doped chalcopyrites as contacts to CdTe photovoltaics

2014 / IEEE
By: Erickson, T.; Rockett, A.; Wang, Z.; Aryal, K.; Marsillac, S.; Koirala, P.; Collins, R.W.;

p-channel quantum-well heterostructure MI/sup 3/SFET

1988 / IEEE
By: Wright, S.L.; Tiwari, S.; Kiehl, R.A.; Olson, M.A.;

Ohmic contacts to semiconducting diamond

1988 / IEEE
By: Nguyen, R.; Moazed, K.L.; Zeidler, J.R.;

Heterostructure devices using self-aligned p-type diffused ohmic contacts

1988 / IEEE
By: Akhtar, S.; Ginzberg, A.; Tiwari, S.; Kiehl, R.; Kwark, Y.H.; Marks, R.F.; Wright, S.L.;

Improving collector-current uniformity in emitter-graded AlGaAs/GaAs heterojunction bipolar transistors

1988 / IEEE
By: Kawai, H.; Taira, K.; Takano, C.;

Self-aligned AlGaAs/GaAs HBT with low emitter resistance utilizing InGaAs cap layer

1988 / IEEE
By: Ishibashi, T.; Ito, H.; Nittono, T.; Yamauchi, T.; Nakajima, O.; Nagata, K.;

Backgating studies in In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As modulation-doped field-effect transistors

1988 / IEEE
By: Bhattacharya, P.K.; Hong, W.-P.;

A two-layer magneto-TLM contact resistance model: application to modulation-doped FET structures

1988 / IEEE
By: Look, D.C.;

Specific contact resistivity of metal-semiconductor contacts-a new, accurate method linked to spreading resistance

1988 / IEEE
By: Carver, G.P.; Forman, R.A.; Novotny, D.B.; Kopanski, J.J.;

The spreading resistance error in the vertical Kelvin test resistor structure for the specific contact resistivity

1988 / IEEE
By: Yang, W.L.; Lee, C.L.; Lei, T.F.;

Nonlinear parasitics in MODFETs and MODFET I-V characteristics

1988 / IEEE
By: Rice, L.; Roblin, P.; Morkoc, H.; Bibyk, S.B.;

Low-resistance submicrometer contacts to silicon

1988 / IEEE
By: Wright, P.J.; Loh, W.M.; Saraswat, K.C.;

Temperature dependence of transient and conventional annealed AlGaAs/GaAs MODFET ohmic contacts

1988 / IEEE
By: Rai, A.K.; Ezis, A.; Ikossi-Anastasiou, K.;

On the failure mechanisms of titanium nitride/titanium silicide barrier contacts under high current stress

1988 / IEEE
By: Pyle, R.E.; Fu, K.-Y.;

High-gain n-p-n and p-n-p InGaAs/InAlAs double-heterojunction bipolar transistors with InAs cap layers by molecular-beam epitaxy

1988 / IEEE
By: Morkoc, H.; Litton, C.; Chen, J.; Won, T.; Peng, C.K.;

Dependence of Al-Si/Si contact resistance on substrate surface orientation

1988 / IEEE
By: Onoda, H.;

V-band monolithic phase shifters

1988 / IEEE
By: Wang, D.C.; Lan, G.L.; Chen, J.C.; Pao, C.K.; Herman, M.I.; Wong, W.S.;

Formation of ohmic contacts to n-GaAs via heterojunction by using indium and gold

1988 / IEEE
By: Yee, W.; Naseem, H.A.;

Photoelastic effects on the emission patterns of InGaAsP ridge-waveguide lasers

1989 / IEEE
By: Samson, L.; Berger, J.; Champagne, A.; Glinski, J.M.; Maciejko, R.;

Ohmic contact penetration and encroachment in GaAs/AlGaAs and GaAs FETs

1989 / IEEE
By: Tehrani, S.; Goronkin, H.; Johnston, K.J.; Fejes, P.L.; Remmel, T.;

Formation of TiSi/sub 2/ and shallow junction by As/sup +/ ion-beam mixing and infrared rapid heat treatment

1989 / IEEE
By: Tsien, P.-H.; Lin, H.W.; Ye, M.; Yin, S.-D.; Zhang, J.-P.;

Arsenic polyps on contacts to GaAs

1989 / IEEE
By: Goronkin, H.; Convey, D.;

RAPS-a rapid thermal processor simulation program

1989 / IEEE
By: Tsay-Jiu Shieh; Carter, R.L.;

Organic-on-inorganic semiconductor photodetector

1989 / IEEE
By: So, F.F.; Forrest, S.R.;

Accurate modeling for parasitic source resistance in two-dimensional electron gas field-effect transistors

1989 / IEEE
By: Itoh, T.; Ando, Y.;

High-transconductance beta -SiC buried-gate JFETs

1989 / IEEE
By: Kong, H.-S.; Sleger, K.J.; Binari, S.; Shur, M.S.; Kelner, G.;

MESFETs with nonalloyed ohmic contacts using a graded n/sup +/ (InGa)As cap layer

1989 / IEEE
By: Carroll, R.D.; Eschrich, T.C.; Tanski, W.J.; Sacks, R.N.;

Stable solid-phase contact to n-GaAs

1989 / IEEE
By: Nicolet, M.-A.; Flick, W.; Molarius, J.M.; Nieh, C.W.; Tandon, J.L.; Kolawa, E.; So, F.C.T.; Madok, J.H.;

Metal/amorphous silicon multilayer radiation detectors

1989 / IEEE
By: Hatayama, T.; Naruse, Y.;

Characterization of alloyed AuGe/Ni/Au ohmic contacts to n-doped GaAs by measurement of transfer length and under the contact sheet resistance

1989 / IEEE
By: Henry, H.G.;

Conductive fur brush charging of a dielectric surface

1989 / IEEE
By: Nakajima, J.; Kimura, M.; Wanou, M.; Matsuda, T.;

Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors produced by limited reaction processing

1989 / IEEE
By: Gibbons, J.F.; Gronet, C.M.; Hoyt, J.L.; King, C.A.; Turner, J.; Scott, M.;

Next Page