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Topic: Metal-gate Devices
PBTI-Associated High-Temperature Hot Carrier Degradation of nMOSFETs With Metal-Gate/High- $k$ Dielectrics2008 / IEEE
By: Kyong Taek Lee; Chang Yong Kang; Ook Sang Yoo; Rino Choi; Byoung Hun Lee; Lee, J.C.; Hi-Deok Lee; Yoon-Ha Jeong;
Modeling and analysis of grain-orientation effects in emerging metal-gate devices and implications for SRAM reliability2008 / IEEE / 978-1-4244-2377-4
By: De, V.; Endo, K.; Dadgour, H.; Banerjee, K.;