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Topic: Ion Implanters

Results

Minimizing disruptive effects of high voltage discharges in ion implanters
1990 / IEEE / 0-7803-7264-6
By: Hipple, J.E.;
Machine and metrology issues for dose accuracy, repeatability, and uniformity of ion implanters
1996 / IEEE / 0-7803-3289-X
By: Yarling, C.B.; Marin, T.; Current, M.I.;
Accurate dose matching measurements between different ion implanters
1996 / IEEE / 0-7803-3289-X
By: Lundquist, P.; Callahan, R.; Falk, S.;
Low energy beam extraction in terms of magnetic field, electric field and ion optics
1996 / IEEE / 0-7803-3289-X
By: Bryan, N.; Ito, H.;
Some basic considerations of sector magnets
1996 / IEEE / 0-7803-3289-X
By: McLaren, M.G.; Nobes, M.J.;
Low energy beam extraction in terms of magnetic field, electric field and ion optics
1996 / IEEE / 0-7803-3289-X
By: Bryan, N.; Ito, H.;
Evaluation of electrode materials for ion implanters
1999 / IEEE / 0-7803-4538-X
By: Vanderberg, B.H.; Horsky, T.N.; Perel, A.S.;
Characterization of hazardous gases released during ion implant processes
1999 / IEEE / 0-7803-4538-X
By: Rendon, M.J.; Boyd, W.; Arno, J.; Romig, T.;
Radiation emission from ion implanters when implanting hydrogen and deuterium
1999 / IEEE / 0-7803-4538-X
By: Wenzel, K.; Zhimin Wan; Roberge, S.; McIntyre, E.; Saadatmand, K.; Dykstra, J.; Rathmell, R.;
Automatic determination of pressure compensation factors without requiring wafer implants
1999 / IEEE / 0-7803-4538-X
By: Halling, M.; Ring, P.; Chen, H.; Krull, W.;
Monitoring system of reliability and repeatability of pressure compensation
1999 / IEEE / 0-7803-4538-X
By: Sano, M.; Sugitani, M.; Kariya, H.; Kabasawa, M.;
Automatic LINAC parameter generation
1999 / IEEE / 0-7803-4538-X
By: Sawada, K.; Sugitani, M.; Kariya, H.; Tsukihara, M.;
Using transfer matrix to analyze the dosimetry of ion implanters
1999 / IEEE / 0-7803-4538-X
By: Yongzhang Huang;
An analytical model for beam induced contamination in ion implantation
1999 / IEEE / 0-7803-4538-X
By: Gyulai, J.; Lucassen, M.; Haublein, V.; Frey, L.; Ryssel, H.;
Achieving next generation performance of ion implanters with the Varian Control System (VCS)
2000 / IEEE / 0-7803-6462-7
By: Zimmermann, L.M.; Callahan, W.G.; Parisi, N.A.; Viviani, G.L.;
Improved cooling on the Varian VIISta series ion implanters
2000 / IEEE / 0-7803-6462-7
By: Larsen, K.;
Abatement of effluent species from ion implantation process
2000 / IEEE / 0-7803-6462-7
By: Arno, J.; Faller, R.J.; Eastman, S.;
Seamless transferability of doping processes between the VIISta platform of ion implanters
2002 / IEEE / 0-7803-7155-0
By: Variam, N.; Guo, B.N.; Norasetthekul, S.; Mehta, S.;
Quantum II™ : low energy beamline innovations for increased manufacturing productivity
2002 / IEEE / 0-7803-7155-0
By: Goldberg, R.; Armour, D.; Murrell, A.; Burgess, C.;
Varian semiconductor indirectly heated cathode sources
2002 / IEEE / 0-7803-7155-0
By: Olson, J.C.; Klos, L.; Shengwu Chang; Maciejowski, P.E.;
Dopant ion induced electron emission yield from IC target materials
2002 / IEEE / 0-7803-7155-0
By: Arrale, A.M.; Cherekdjian, S.; Zhao, Z.Y.;
Low energy implantation technology with decaborane molecular ion beam
2004 / IEEE / 0-7803-8191-2
By: Naito, M.; Nagai, N.; Tanjyo, M.; Sakai, S.; Hamamoto, N.; Umisedo, S.;
Side Extraction Duopigatron-Type Ion Source
2007 / IEEE / 978-1-4244-0915-0
By: Johnson, B.M.; Hershcovitch, A.; Oks, E.M.; Gushenets, V.I.;

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