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Topic: Ferroelectric Switching

Results

Polarization dynamics and non-equilibrium switching processes in ferroelectrics
2011 / IEEE
By: Kok Boon Chong; Reece, M.J.; Cain, M.G.; Weaver, P.M.; Vopsaroiu, M.;
Ferroelectric switching in Bi4Ti3O12 nanorods
2012 / IEEE
By: Nanni, P.; Buscaglia, M.T.; Buscaglia, V.; Harnagea, C.; Azodi, M.; Pignolet, A.; Rosei, F.;
Studies of Perovskite Materials for High-Performance Storage Media, Piezoelectric, and Solar Energy Conversion Devices
2010 / IEEE / 978-1-61284-986-7
By: Bennett, J.W.; Grinberg, I.; Tingting Qi; Nelson, K.A.; Ka-Lo Yeh; Rappe, A.M.; Young-Han Shin;
Piezoelectric, pyroelectric and ferroelectric polymers as a functional soft matter
2011 / IEEE / 978-1-4577-1025-4
By: Furukawa, T.; Kodama, H.;
Nonvolatile ferroelectric polymer memory with controlled hierarchical nanostructures
2011 / IEEE / 978-1-4577-1025-4
By: Park, C.; Park, Y.J.; Kang, S.J.;
Nonlinear dielectric properties and polarization in ferroelectric P(VDF-TrFE) copolymer thin films
2011 / IEEE / 978-1-4577-1025-4
By: Ploss, B.; Hahne, S.; Nordheim, D.V.;
Ferroelectric and switching behavior of poly(vinylidene fluoride-trifluoroethylene) copolymer ultrathin films with polypyrrole interface
2007 / American Institute of Physics
By: Haisheng Xu; Xiaobing Liu; Juhua Zhong; Dong Shen; Jianhua Chen;
Spin polarization switched by a ferroelectric resonant tunneling diode
2007 / American Institute of Physics
By: M. K. Li; N. M. Kim; T. W. Kang;
Composition-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb(ZrxTi1x)O3 thin films
2008 / American Institute of Physics
By: J. Y. Jo; S. M. Yang; H. S. Han; D. J. Kim; W. S. Choi; T. W. Noh; T. K. Song; J.-G. Yoon; C.-Y. Koo; J.-H. Cheon; S.-H. Kim;
Ferroelectric properties of spin-coated ultrathin (down to 10 nm) copolymer films
2008 / American Institute of Physics
By: Klaus Müller; Dipankar Mandal; Karsten Henkel; Ioanna Paloumpa; Dieter Schmeisser;
Imprint effect in ferroelectric poly(vinylidene fluoride-trifluoroethylene) thin films
2009 / American Institute of Physics
By: GuoDong Zhu; XiaoYa Luo; JiHao Zhang; XueJian Yan;
A pulse generation circuit for improved measurement of current transients in ferroelectric thin films
1992 / IEEE
By: Grondin, R.O.; Clark, L.T.; Gloerstad, T.K.; Dey, S.K.;
Theoretical aspects of polarization reversal in ferroelectrics
1990 / IEEE / 0-7803-0190-0
By: Ishibashi, Y.;
Integration of UHV-grown ferroelectric films into nonvolatile memories
1990 / IEEE / 0-7803-0190-0
By: Stepke, E.; Sinharoy, S.; Lampe, D.R.; Buhay, H.;
PZT thin films for GaAs ferroelectric RAM applications
1990 / IEEE / 0-7803-0190-0
By: Sanchez, L.E.; Wu, S.Y.; Geideman, W.A.; Watanabe, S.H.; Naik, I.K.; Liu, W.M.; Maderic, B.P.;
Basic thin film processing for perovskite materials
1990 / IEEE / 0-7803-0190-0
By: Wasa, K.; Setsune, K.; Higashino, H.; Kitabatake, M.; Adachi, H.;
A ferroelectric capacitor simulation model
1990 / IEEE / 0-7803-0190-0
By: Evans, J.T.; Bullington, J.A.;
Sol-gel derived PZT thin films for switching applications
1990 / IEEE / 0-7803-0190-0
By: Udayakumar, K.R.; Cross, L.E.; Krupanidhi, S.B.; Chen, J.;
Electrical properties of very thin VDF-TrFE copolymer films
1990 / IEEE
By: Schilling, D.; Glatz-Reichenbach, J.; Dransfeld, K.;
Simulation of the ferroelectric switching of PVDF and its copolymers
1992 / IEEE / 0-7803-0129-3
By: Marat Mendes, J.; Franco, I.; Lanca, M.C.;
Ferroelectric behavior of P(VDF-TrFE) copolymer samples
1992 / IEEE / 0-7803-0565-5
By: Minami, G.; Giacometti, J.A.; Alves, N.; Oliveira, O.N., Jr.;
A ferroelectric capacitor macromodel and parameterization algorithm for SPICE simulation
1994 / IEEE
By: Dunn, D.E.;
Polarization fatigue in perovskite ferroelectric ceramics and thin-films
1992 / IEEE / 0-7803-0465-9
By: Harmer, M.P.; Chen, J.; Smyth, D.M.;
Ultrafast polarization switching of lead zirconate titanate thin films
1992 / IEEE / 0-7803-0465-9
By: van der Mark, M.B.; Kampschoer, G.L.M.; Larsen, P.K.; Klee, M.;
Fatigue effect on the I-V characteristics of sol-gel derived PZT thin films
1992 / IEEE / 0-7803-0465-9
By: Schrimpf, R.D.; Teowee, G.; Lee, S.C.; Galloway, K.F.; Uhlmann, D.R.; Birnie, D.P., III;
Defect structures and fatigue in ferroelectric PZT thin films
1992 / IEEE / 0-7803-0465-9
By: Sayer, M.; Wu, Z.;
Controlled ion bombardment induced modification of PZT thin films
1992 / IEEE / 0-7803-0465-9
By: Krapanidhi, S.B.; Hu, H.;
LiNbO/sub 3/ thin film capacitor and transistor processed by a novel method of photo-induced metallo-organic decomposition
1992 / IEEE / 0-7803-0465-9
By: Huang, C.H.-J.; Rabson, T.A.; Lin, H.;
Photo-CVD of ferroelectric Pb(Zr,Ti)O/sub 3/ thin films
1992 / IEEE / 0-7803-0465-9
By: Shimizu, M.; Sugiyama, M.; Katayama, T.; Shiosaki, T.;
Poling and switching behavior of ferroelectric single grains studied by piezoelectric resonance
1992 / IEEE / 0-7803-0465-9
By: Ryu, Y.I.; Yu, I.; Kim, J.S.;
90 degrees -domain reversal in Pb(Zr/sub x/Ti/sub 1-x/)O/sub 3/ ceramics
1992 / IEEE / 0-7803-0465-9
By: Cross, L.E.; Bhalla, A.S.; Huang, C.-Y.; Li, S.;
Optical digital cross-connect system using photonic switch matrices and optical amplifiers
1994 / IEEE
By: Shiozawa, T.; Burke, C.; Suzuki, S.; Fujiwara, M.; Shiragaki, T.;
SSFLC optical directional coupler switch with a short device length: a proposal
1995 / IEEE
By: Wei-Ching Chuang; Kun-Yi Lee; Jin Shin Lin; Wei Yu Lee;
Ferroelectric switching characteristics of nylon 11
1994 / IEEE / 0-7803-1940-0
By: Kamiya, H.; Nakakubo, K.; Takahashi, Y.; Furukawa, T.; Kutani, M.;
Switching transients in an ultrathin ferroelectric copolymer film
1994 / IEEE / 0-7803-1940-0
By: Arafin, P.; Guy, I.;
Effects of repeated polarization reversal on polarization properties in vinylidene fluoride trifluoroethylene copolymers
1994 / IEEE / 0-7803-1940-0
By: Kutani, M.; Sakai, S.; Date, M.;
Effects of annealing on switching characteristics of VDF/TrFE copolymers
1994 / IEEE / 0-7803-1940-0
By: Kodama, H.; Takahashi, Y.; Furukawa, T.;
A simple unified analytical model for ferroelectric thin film capacitor and its applications for nonvolatile memory operation
1994 / IEEE / 0-7803-1847-1
By: McMillan, L.D.; Azuma, M.; Deng-Yuan Chen; Paz de Araujo, C.A.;
Stress in Pt/Pb(Zr,Ti)O/sub 3//Pt capacitors for integrated ferroelectric devices
1994 / IEEE / 0-7803-1847-1
By: Ulenaers, M.J.E.; Moors, W.G.J.; Dormans, G.J.M.; Spierings, G.A.C.M.; Larsen, P.K.;
Dependence on supermolecular structure and on charge injection conditions of ferroelectric switching of PVDF and its blends with PMMA
1994 / IEEE / 0-7803-1847-1
By: Jungnickel, B.-J.; Stein, M.; Becker, A.;
Antiferroelectric to ferroelectric phase switching thin films in the lead zirconate stannate titanate solid solution system
1994 / IEEE / 0-7803-1847-1
By: Chen, H.D.; Udayakumar, K.R.; Gaskey, C.J.; Cross, L.E.;
Electrical properties of PZT thin films with Ir and IrO/sub 2/ electrodes
1994 / IEEE / 0-7803-1847-1
By: Nakao, Y.; Nakamura, T.; Takasu, H.; Kamisawa, A.;
Parametric small signal amplification near bifurcations [ferroelectrics]
1994 / IEEE / 0-7803-1847-1
By: Beige, H.; Diestelhorst, M.; Kapsch, R.-P.;
Switching in ferroelectric thin films: how to extract information about domain kinetics from traditional current data
1994 / IEEE / 0-7803-1847-1
By: Makarov, S.D.; Rumyantsev, E.L.; Shur, V.Ya.; Volegov, V.V.;
Antiferroelectric/ferroelectric composite thin films
1994 / IEEE / 0-7803-1847-1
By: Haertling, G.H.; Wang, F.; Dausch, D.E.;
A metal-ferroelectric PbTiO/sub 3/-semiconductor switch diode (MFSS) for room-temperature high-speed infrared sensing application
1996 / IEEE
By: Shu, C.Y.; Fang, Y.K.; Chen, F.Y.; Chen, J.-R.;
UV light excited by the ferroelectric electron emission in N/sub 2/ gas
1996 / IEEE / 0-7803-3580-5
By: Yasuoka, K.; Ishii, S.; Ibuka, S.; Miyake, M.;
Ferroelectric ceramics: Switching and hysteresis curve
1996 / IEEE / 0-7803-2695-4
By: Arlt, G.;
Dependence of ferroelectric switching time of PVDF on mechanical stress and on blending
1997 / IEEE
By: Jungnickel, B.-J.; Stein, M.;
Electric field induced cracking in PLZT ceramics
1996 / IEEE / 0-7803-3355-1
By: Filipic, C.; Levstik, A.; Kosec, M.; Bobnar, V.;
Antiferroelectric-to-ferroelectric phase switching PLSnZT ceramics. II. The effect of pre-stress conditions on the strain behavior
1996 / IEEE / 0-7803-3355-1
By: Pan, M.-J.; Cross, L.E.; Yoshikawa, S.; Markowski, K.A.; Park, S.-E.;
Preparation and characterization of lanthanum-modified lead titanate thin films
1996 / IEEE / 0-7803-3355-1
By: Calzada, M.L.; Pardo, L.; Alguero, M.;
Switching kinetics in normal and relaxor ferroelectrics: PZT thin films and PLZT ceramics
1996 / IEEE / 0-7803-3355-1
By: Shur, V.;
Antiferroelectric-to-ferroelectric phase switching PLSnZT ceramics. I. Structure, compositional modification and electrical properties
1996 / IEEE / 0-7803-3355-1
By: Pan, M.-J.; Cross, L.E.; Yoshikawa, S.; Park, S.-E.; Markowski, K.A.;
Study on polarization switching as a function of composition in PZT thin films
1996 / IEEE / 0-7803-3355-1
By: Belegundu, U.;
A survey of behavioral modeling of ferroelectric capacitors
1997 / IEEE
By: Sheikholeslami, A.; Gulak, P.G.;
A study on the ferroelectric properties of PZT heterolayered thin films
1998 / IEEE / 4-88686-050-8
By: Park, I.G.; Lee, S.G.; Lee, Y.H.; Bae, S.G.;
Domain formation in 0.90 Pb(Zn/sub 1/3/Nb/sub 2/3/)O/sub 3/-0.10PbTiO/sub 3/ single crystals under electric field along [111] direction
1998 / IEEE / 0-7803-4095-7
By: Du, X.H.; Pastor, M.; Belegundu, U.; Uchino, K.; Cross, L.E.;
Switching transient analysis of a metal/ferroelectric/semiconductor switch diode with high speed response to infrared light
1999 / IEEE
By: Jiann-Ruey Chen; Chin-Yuan Hsu; Shu, C.Y.; Fang, Y.K.; Jyh-Jier Ho; Chen, F.Y.; Ju, M.S.;
Degradation of perovskite Pb(Zr,Ti)O/sub 3/ thin films fabricated by pulsed laser ablation
1998 / IEEE / 0-7803-4959-8
By: Masuda, Y.; Hirai, T.; Masumoto, H.; Nishida, T.; Fujita, S.;
Refinement of Pb(Zr,Ti)O/sub 3/ thin films grown by MOCVD
1998 / IEEE / 0-7803-4959-8
By: Fujisawa, H.; Yoshida, M.; Shimizu, M.; Niu, H.;
Influence of K/sup 1+//La/sup 3+/ co-modification on domain evolution and electrically-induced strains in lead zirconate titanate ferroelectric ceramics
1998 / IEEE / 0-7803-4959-8
By: Viehland, D.; Jie-Fang Li; Qi Tan;
An application of polarized domains in ferroelectric thin films using scanning probe microscope
1998 / IEEE / 0-7803-4959-8
By: Geunbae Lim; Kyongmi Lee; Jong Up Jeon; Won-Kyu Moon; Pak, Y.E.; Hyunjung Shin; Ki Hyun Yoon; Jeong Hwan Park;
Polarization phenomena in SrBi/sub 2/Ta/sub 2/O/sub 9/ ferroelectric thin films at the nanometer scale
1998 / IEEE / 0-7803-4959-8
By: Gruverman, A.; Tokumoto, H.;
Switching kinetics of and electron emission from ferroelectric thin films
1998 / IEEE / 0-7803-4959-8
By: Averty, D.; Le Bihan, R.; Seveno, R.; Gundel, H.;
Characteristics of electromechanical solid state multilayer actuators
1998 / IEEE / 0-7803-4959-8
By: Shrout, T.R.; Park, S.-E.; Yoshikawa, S.; Vedula, V.R.; Pan, M.-J.; Pertsch, P.;
Space charge and polarization interaction in ferroelectric polymers
1999 / IEEE / 0-7803-5025-1
By: Giacometti, J.A.; de Figueiredo, M.T.; Hoschkara, M.; von Seggern, H.; Ferreira, G.F.L.;
LIMM investigations on cells with ferroelectric liquid crystalline materials
1999 / IEEE / 0-7803-5025-1
By: Geschke, D.; Leister, N.;
Polarization reversal of aliphatic polyurethane above the glass transition temperature
1999 / IEEE / 0-7803-5025-1
By: Yuki, T.; Ikeda, S.; Koda, T.; Shida, K.;
An application of polarized domains in ferroelectric thin films using scanning probe microscope
2000 / IEEE
By: Jeong Hwan Park; Kyung-Mee Lee; Hyunjung Shin; Ki Hyun Yoon; Won-Kyu Moon; Pak, Y.E.; Geunbae Lim; Jong Up Jeon;
Fixing of volume holograms in ferroelectric phase K/sub 1-y/Li/sub y/Ta/sub 1-x/Nb/sub x/O/sub 3/
1996 / IEEE / 1-55752-443-2
By: Yariv, A.; Min Zhang; Xiaolin Tong; Agranat, A.; Leyva, V.; Hofmeister, R.;
A novel displacement component in PVDF and its role in ferroelectric switching
2000 / IEEE
By: Fedosov, S.; von Seggern, H.;
Electron emission of ferroelectric materials
2001 / IEEE / 0-7803-7197-6
By: Sidorkin, A.A.; Sidorkin, A.S.; Milovidova, S.D.; Rogazinskaya, O.V.;
AFM polarization studies of high-fatigue-endurance PZT thin film capacitors with modified Pt/RuO/sub 2/ top electrodes
2000 / IEEE / 0-7803-5940-2
By: Stolichnov, I.; Colla, E.L.; Setter, N.; Tagantsev, A.K.;
Ferroelectric emission studies for electron emission lithography applications
2000 / IEEE / 0-7803-5940-2
By: Ryu, S.O.; Yoo, I.K.; Chung, J.W.; Kim, B.M.; Lee, J.K.; Suchicital, C.;
Preparation and properties of soft ferroelectric BaTiO/sub 3/ thin film by sol-gel process
2000 / IEEE / 0-7803-5940-2
By: Nagata, K.; Tsuchiya, T.; Nishio, K.; Thongrueng, J.; Masuda, Y.;
Electrorheological model of high-strain active materials
2000 / IEEE / 0-7803-5940-2
By: Yet-Ming Chiang; Soukhojak, A.N.;
Ferroelectric properties of Pt/SrRuO/sub 3//PLZT/Pt capacitors
2000 / IEEE / 0-7803-5940-2
By: Kobune, M.; Fujii, S.; Mineshige, A.; Matsuzaki, T.; Matsuura, O.;
Fatigue and data retention characteristics of single-grained Pb(Zr,Ti)O/sub 3/ thin films
2000 / IEEE / 0-7803-5940-2
By: Seung-Ki Joo; Chan-Soo Kim; Jang-Sik Lee;
Fatigue characteristics of PZT thin films prepared by low thermal budget process
2000 / IEEE / 0-7803-5940-2
By: Young Park; Dong-Gun Lim; Junsin Yi; Sang-Il Moon;
Observation of polarization reversal processes in Pb(Zr,Ti)O/sub 3/ thin films using atomic force microscopy
2000 / IEEE / 0-7803-5940-2
By: Niu, H.; Shimizu, M.; Matsumoto, Y.; Fujisawa, H.;
The ferroelectric properties of Pb/sub 5/Ge/sub 3/O/sub 11/ thin films made by MOCVD and RTP techniques
2000 / IEEE / 0-7803-5940-2
By: Sheng Teng Hsu; Hong Ying; Tingkai Li;
A dynamic ferroelectric capacitance model for circuit simulators
2000 / IEEE / 0-7803-5940-2
By: Kuhn, C.; Hoffmann, K.; Gondro, E.; Kowarik, O.; Honigschmid, H.;
Orientation dependent ferroelectric properties of SrBi/sub 2/Ta/sub 2/O/sub 9/ ferroelectric thin films
2000 / IEEE / 0-7803-5940-2
By: Song, T.K.; Kwun, S.I.; Back, S.B.; Moon, S.E.; Yoon, J.-G.;
Switching properties of the Pb/sub 0.9/La/sub 0.1/TiO/sub 3/ thin film
2000 / IEEE / 0-7803-5940-2
By: Sung An Kim; Seong Jun Kang; Dong Hoon Chang; Yung Sup Yoon; Kook Pyo Lee;
Orientation dependence of ferroelectricity of epitaxially grown Pb(Zr/sub x/Ti/sub 1-x/)O/sub 3/ thin films prepared by metalorganic chemical vapor deposition
2000 / IEEE / 0-7803-5940-2
By: Nagashima, K.; Funakubo, H.; Aratani, M.;
Preparation and properties of Bi-system perovskite oxide thin films by sputtering method
2000 / IEEE / 0-7803-5940-2
By: Watanabe, M.; Ichinose, N.;
Preparation and characterization of piezoelectric (Pb/sub 0.76/Ca/sub 0.24/)TiO/sub 3/ films
2001 / IEEE / 0-7803-6714-6
By: Xu, J.B.; Wilson, I.H.; Guo, H.Y.;
Optical damage and light-induced absorption in near-stoichiometric LiTaO/sub 3/ crystal
2001 / IEEE / 1-55752-662-1
By: Fejer, M.M.; Alexandrovski, A.; Nakamura, M.; Takekawa, S.; Furukawa, Y.; Kitamura, K.;
Optical damage and light-induced absorption in near-stoichiometric LiTaO/sub 3/ crystal
2001 / IEEE / 1-55752-662-1
By: Nakamura, M.; Takekawa, S.; Furukawab, Y.; Kitamura, K.; Fejer, M.M.; Alexandrovski, A.;
A 76-mm/sup 2/ 8-Mb chain ferroelectric memory
2001 / IEEE
By: Hoya, K.; Kamoshida, M.; Ogiwara, R.; Itoh, Y.; Miyakawa, T.; Takeuchi, Y.; Doumae, S.M.; Oowaki, Y.; Kunishima, I.; Takashima, D.; Yamakawa, K.; Kanaya, H.; Ozaki, T.;
A high-endurance 96-Kbit FeRAM embedded in a smart card LSI using Ir/IrO2/PZT(MOCVD)/Ir ferroelectric capacitors
2001 / IEEE / 0-7803-6520-8
By: Koike, H.; Maejima, Y.; Yamada, J.; Takeuchi, H.; Seike, A.; Tanabe, N.; Mori, H.; Toyoshima, H.; Hada, H.; Hase, T.; Kasai, N.; Miwa, T.; Sugiyama, H.; Nakura, T.; Kobayashi, S.; Tatsumi, T.;
PbZr/sub 0.5/Ti/sub 0.5/O/sub 3/ thin films prepared on La/sub 0.5/Sr/sub 0.5/CoO/sub 3//LaNiO/sub 3/ heterostructures for integrated ferroelectric devices
2001 / IEEE / 0-7803-6520-8
By: Yu, J.; Sun, J.L.; Meng, X.J.; Lai, Z.Q.; Wang, G.S.; Chu, J.H.; Guo, S.L.;
Recording on PZT and AgInSbTe thin films for probe-based data storage
2002 / IEEE / 0-7803-7185-2
By: Dong Weon Lee; Esashi, M.; Ono, T.;
Metal/SrBi/sub 2/Ta/sub 2/O/sub 9//SiN/Si ferroelectric DRAM (FEDRAM) transistors with ultrathin SiN buffer and long retention
2001 / IEEE / 0-7803-7432-0
By: Soon-Won Jung; Jin-Ping Han; Kwang-Ho Kim; Ma, T.P.;
Recent measurements of the ferratron: a high-voltage, fast risetime gas switch with a ferroelectric trigger
2001 / IEEE / 0-7803-7120-8
By: Elizondo, J.M.; Farr, E.G.; Ellibee, D.E.; Lehr, J.M.;
UV light irradiation for optical damage control in near-stoichiometric LiNbO/sub 3/
2002 / IEEE / 1-55752-706-7
By: Hatano, H.; Kurimura, S.; Nakamura, M.; Jayavel, R.; Liu, Y.; Kitamura, K.;
Ferroelectricity in liquid crystals probed by second harmonic generation
2002 / IEEE / 1-55752-706-7
By: Marowsky, G.; Soria, S.; Aktsipetrov, O.A.; Murzina, T.V.; Fokin, Yu.G.;
Conductivity induced polarization in two-phase ferroelectric materials
2002 / IEEE / 0-7803-7560-2
By: von Seggern, H.; Fedosov, S.N.;
Stable and metastable ferroelectric polarization analyzed by the ramp voltage technique
2002 / IEEE / 0-7803-7560-2
By: Giacometti, J.A.; Faria, R.M.; Leal Ferreira, G.F.; Wisniewski, C.;

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