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Topic: Dislocation Density

Results

High-Performance AlGaN/GaN Schottky Diodes With an AlGaN/AlN Buffer Layer
2011 / IEEE
By: Jen-Inn Chyi; Hsueh-Hsing Liu; Geng-Yen Lee;
Effect of Plastic Deformation on the Excess Loss of Electrical Steel
2012 / IEEE
By: de Campos, M.F.; Machado, R.; Landgraf, F.J.G.; Missell, F.P.; Gerhardt, G.J.L.; Silveira, J.R.F.; Rodrigues, D.L.;
Magnetic Barkhausen Noise in Quenched Carburized Nickel-Steels
2012 / IEEE
By: de Campos, M.F.; Monlevade, E.F.; Padovese, L.R.; Goldenstein, H.; Capo-Sanchez, J.; Franco, F.A.;
Improved Output Power of InGaN-Based Ultraviolet LEDs Using a Heavily Si-Doped GaN Insertion Layer Technique
2012 / IEEE
By: Jin-Chai Li; Chia-Cheng Tu; Ching-Hsueh Chiu; Shih-Cheng Huang; Po-Min Tu; Chien-Chung Lin; Zhen-Yu Li; Chun-Yen Chang; Shing-Chung Wang; Hao-Chung Kuo; Tien-Chang Lu; Hsiao-Wen Zan; Wu-Yih Uen;
Metamorphic GaAsP and InGaP Solar Cells on GaAs
2012 / IEEE
By: Tomasulo, S.; Lee, M.L.; Yaung, K.N.;
Crystalline quality of the trigonal piezoelectric materials and effects of the extended defects
2012 / IEEE
By: Capelle, B.; Epelboin, Y.; Detaint, J.;
Selective-Area High-Quality Germanium Growth for Monolithic Integrated Optoelectronics
2012 / IEEE
By: Hyun-Yong Yu; Jin-Hong Park; Okyay, A.K.; Saraswat, K.C.;
Mechanism of long-range effects in metals and alloys exposed to intense-pulsed-ion beams
2004 / IEEE / 978-5-87911-088-3
By: Valyaev, A.N.; Struts, V.K.;
Equilibrium between spontaneous polarization, piezoelectric polarization and crystal defects for blue LEDs on sapphire substrate
2011 / IEEE / 978-1-4244-9439-2
By: Yufu Wang;
Enhanced mobility for MOCVD grown AlGaN/GaN HEMTs on Si substrate
2011 / IEEE / 978-1-61284-244-8
By: Selvaraj, S.L.; Egawa, T.; Watanabe, A.;
Towards sub-300 nm laser diodes on bulk AlN substrates
2011 / IEEE / 978-1-4577-1756-7
By: Wraback, M.; Moody, B.; Garrett, G.A.; Kneissl, M.; Shen, H.; Johnson, N.M.; Yang, Z.; Northrup, J.E.; Chua, C.L.; Wunderer, T.; Sitar, Z.; Dalmau, R.F.; Schlesser, R.; Craft, H.S.;
High-� Gate Dielectrics for Ge CMOS and Related Memory Devices
2012 / IEEE / 978-1-4577-1865-6
By: Chen, P.C.; Chin, A.; Kang, J.F.; Liu, X.Y.; Wu, Y.H.; Cheng, C.H.;
Effect of Crystalline Quality on Photovoltaic Performance for ${\rm In}_{0.17}{\rm Ga}_{0.83}{\rm As}$ Solar Cell Using X-Ray Reciprocal Space Mapping
2011 / IEEE
By: Min-De Yang; Dong-Sing Wuu; Ray-Hua Horng; Ming-Chun Tseng;
Quantitive Research of the Crystallinity of Pr Doped ${\rm Lu}_{3}{\rm Al}_{5}{\rm O}_{12}$
2012 / IEEE
By: Yoshikawa, A.; Kamada, K.; Yokota, Y.; Yanagida, T.; Yamaji, A.; Pejchal, J.;
Structural properties of InN films grown on O-face ZnO(0001¯) by plasma-assisted molecular beam epitaxy
2012 / American Institute of Physics
By: YongJin Cho; Oliver Brandt; Maxim Korytov; Martin Albrecht; Vladimir M. Kaganer; Manfred Ramsteiner; Henning Riechert;
Coincident site lattice-matched InGaN on (111) spinel substrates
2012 / American Institute of Physics
By: A. G. Norman; P. C. Dippo; H. R. Moutinho; J. Simon; A. J. Ptak;
GaN epitaxy on Cu(110) by metal organic chemical vapor deposition
2012 / American Institute of Physics
By: Qiming Li; Jeffery Figiel; George Wang; Huiwen Xu; Ganesh Balakrishnan;
Mechanism of formation of the misfit dislocations at the cubic materials interfaces
2012 / American Institute of Physics
By: Yi Wang; P. Ruterana; S. Kret; J. Chen; S. El Kazzi; L. Desplanque; X. Wallart;
On the role of hierarchical twins for achieving maximum yield strength in nanotwinned metals
2012 / American Institute of Physics
By: Linli Zhu; Hongning Kou; Jian Lu;
Influence of dislocation density on carrier injection in InGaN/GaN light-emitting diodes operated with alternating current
2013 / American Institute of Physics
By: Dong-Yul Lee; Sang-Heon Han; Dong Ju Lee; Jeong Wook Lee; Dong-Joon Kim; Young Sun Kim; Sung-Tae Kim; Jae-Young Leem;
Improvement of efficiency and electrical properties using intentionally formed V-shaped pits in InGaN/GaN multiple quantum well light-emitting diodes
2013 / American Institute of Physics
By: Dong-Joon Kim; Sukho Yoon; Young Sun Kim; Sung-Tae Kim; Jeong Wook Lee; Sang-Heon Han; Dong-Yul Lee; Hyun-Wook Shim;
Reduced threading dislocation densities in high-T/N-rich grown InN films by plasma-assisted molecular beam epitaxy
2013 / American Institute of Physics
By: Bernhard Loitsch; Fabian Schuster; Martin Stutzmann; Gregor Koblmüller;
Simulation of shock-induced plasticity including homogeneous and heterogeneous dislocation nucleations
2006 / American Institute of Physics
By: Mutasem A. Shehadeh; E. M. Bringa; H. M. Zbib; J. M. McNaney; B. A. Remington;
Dislocation junctions as barriers to threading dislocation migration
2007 / American Institute of Physics
By: Siu Sin Quek; Zhaoxuan Wu; Yong-Wei Zhang; Yang Xiang; David J. Srolovitz;
Dislocation reduction in gallium nitride films using scandium nitride interlayers
2007 / American Institute of Physics
By: M. A. Moram; Y. Zhang; M. J. Kappers; Z. H. Barber; C. J. Humphreys;
Method for determination of recombination activity of cylindric conduction channels for back-contacted solar cells
2007 / American Institute of Physics
By: Nicola Mingirulli; Daniel Biro; Ralf Preu; Stefan W. Glunz; Stephan Riepe;
Effect of threading defects on InGaNGaN multiple quantum well light emitting diodes
2007 / American Institute of Physics
By: M. S. Ferdous; X. Wang; M. N. Fairchild; S. D. Hersee;
Effect of dislocation density on efficiency droop in GaInNGaN light-emitting diodes
2007 / American Institute of Physics
By: Martin F. Schubert; Sameer Chhajed; Jong Kyu Kim; E. Fred Schubert; Daniel D. Koleske; Mary H. Crawford; Stephen R. Lee; Arthur J. Fischer; Gerald Thaler; Michael A. Banas;
Nondestructive analysis of threading dislocations in GaN by electron channeling contrast imaging
2007 / American Institute of Physics
By: Y. N. Picard; J. D. Caldwell; M. E. Twigg; C. R. Eddy; M. A. Mastro; R. L. Henry; R. T. Holm; P. G. Neudeck; A. J. Trunek; J. A. Powell;
Light emission due to dislocations in wurtzite ZnO bulk single crystals freshly introduced by plastic deformation
2008 / American Institute of Physics
By: Y. Ohno; H. Koizumi; T. Taishi; I. Yonenaga; K. Fujii; H. Goto; T. Yao;
Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers
2008 / American Institute of Physics
By: D. Cherns; L. Meshi; I. Griffiths; S. Khongphetsak; S. V. Novikov; N. Farley; R. P. Campion; C. T. Foxon;
X-ray characterization of dislocation density asymmetries in heteroepitaxial semiconductors
2008 / American Institute of Physics
By: B. Yarlagadda; A. Rodriguez; P. Li; R. Velampati; J. F. Ocampo; E. N. Suarez; P. B. Rago; D. Shah; J. E. Ayers; F. C. Jain;
Enhanced emission efficiency of GaNInGaN multiple quantum well light-emitting diode with an embedded photonic crystal
2008 / American Institute of Physics
By: Min-Ki Kwon; Ja-Yeon Kim; Il-Kyu Park; Ki Seok Kim; Gun-Young Jung; Seong-Ju Park; Je Won Kim; Yong Chun Kim;
Reduction of dislocations in GaN films on AlN/sapphire templates using CrN nanoislands
2008 / American Institute of Physics
By: Jun-Seok Ha; Hyo-Jong Lee; Seog Woo Lee; Hyun Jae Lee; Sang Hyun Lee; Hiroki Goto; Meoung Whan Cho; Takafumi Yao; Soon-Ku Hong; Ryuichi Toba; Jae Wook Lee; Jeong Yong Lee;
Separation of bulk and surface electron transport in metamorphic InAs layers using quantitative mobility spectrum analysis
2008 / American Institute of Physics
By: Y. Lin; A. R. Arehart; A. M. Carlin; S. A. Ringel;
Improved performance of Schottky diodes on pendeoepitaxial gallium nitride
2008 / American Institute of Physics
By: T. Zheleva; M. Derenge; D. Ewing; P. Shah; K. Jones; U. Lee; L. Robins;
A model of threading dislocation density in strain-relaxed Ge and GaAs epitaxial films on Si (100)
2009 / American Institute of Physics
By: G. Wang; R. Loo; E. Simoen; L. Souriau; M. Caymax; M. M. Heyns; B. Blanpain;
Defect reduction in (112¯2) semipolar GaN grown on m-plane sapphire using ScN interlayers
2009 / American Institute of Physics
By: C. F. Johnston; M. A. Moram; M. J. Kappers; C. J. Humphreys;
Dynamics of strain relaxation studied by in situ x-ray diffraction immediately after layer heteroepitaxy
2009 / American Institute of Physics
By: M. Horbaschk; A. Benkert; C. Schumacher; K. Brunner; R. B. Neder;
Nanorod epitaxial lateral overgrowth of a-plane GaN with low dislocation density
2009 / American Institute of Physics
By: Shih-Chun Ling; Chu-Li Chao; Jun-Rong Chen; Po-Chun Liu; Tsung-Shine Ko; Tien-Chang Lu; Hao-Chung Kuo; Shing-Chung Wang; Shun-Jen Cheng; Jenq-Dar Tsay;
High efficiency GaN-based light-emitting diodes fabricated on dielectric mask-embedded structures
2009 / American Institute of Physics
By: J. W. Lee; C. Sone; Y. Park; S.-N. Lee; J.-H. Ryou; R. D. Dupuis; C.-H. Hong; H. Kim;
Nonpolar GaN substrates grown by ammonothermal method
2009 / American Institute of Physics
By: R. Kucharski; M. RudziDski; R. DoradziDski; J. GarczyDski; L. Sierzputowski; M. Zajc; J. SerafiDczuk; W. StrupiDski; R. DwiliDski; R. Kudrawiec;
The role of threading dislocations and unintentionally incorporated impurities on the bulk electron conductivity of In-face InN
2009 / American Institute of Physics
By: Chad S. Gallinat; Gregor Koblmüller; James S. Speck;
Improving microstructural quality of semipolar (11212) GaN on m-plane sapphire by a two-step growth process
2009 / American Institute of Physics
By: Qian Sun; Benjamin Leung; Christopher D. Yerino; Yu Zhang; Jung Han;
Reduction of dislocation density in epitaxial GaN layers by overgrowth of defect-related etch pits
2009 / American Institute of Physics
By: J. L. Weyher; H. Ashraf; P. R. Hageman;
Correlation of crystalline defects with photoluminescence of InGaN layers
2009 / American Institute of Physics
By: Nikolai Faleev; Balakrishnam Jampana; Omkar Jani; Hongbo Yu; Robert Opila; Ian Ferguson; Christiana Honsberg;
Defect reduction in epitaxial GaSb grown on nanopatterned GaAs substrates using full wafer block copolymer lithography
2009 / American Institute of Physics
By: Smita Jha; C.-C. Liu; T. S. Kuan; S. E. Babcock; P. F. Nealey; J. H. Park; L. J. Mawst; T. F. Kuech;
Strain relaxation in epitaxial (Pb,Sr)TiO3 thin films on NdGaO3 substrates
2010 / American Institute of Physics
By: Y. Lin; C. Dai; Y. R. Li; X. Chen; C. L. Chen; A. Bhalla; Q. X. Jia;
Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on c-sapphire
2010 / American Institute of Physics
By: V. N. Jmerik; A. M. Mizerov; A. A. Sitnikova; S. V. Ivanov; P. S. Kopev; N. P. Tarasuk; N. V. Rzheutskii; G. P. Yablonskii; E. V. Lutsenko;
Tunnel magnetoresistance with improved bias voltage dependence in lattice-matched Fe/spinel MgAl2O4/Fe(001) junctions
2010 / American Institute of Physics
By: Hiroaki Sukegawa; Huixin Xiu; Tadakatsu Ohkubo; Takao Furubayashi; Tomohiko Niizeki; Wenhong Wang; Shinya Kasai; Seiji Mitani; Koichiro Inomata; Kazuhiro Hono;
Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN
2010 / American Institute of Physics
By: Feng Wu; You-Da Lin; Arpan Chakraborty; Hiroaki Ohta; Steven P. DenBaars; Shuji Nakamura; James S. Speck;
Elimination of threading dislocations in as-grown PbSe film on patterned Si(111) substrate using molecular beam epitaxy
2010 / American Institute of Physics
By: Binbin Weng; Fanghai Zhao; Jiangang Ma; Guangzhe Yu; Jian Xu; Zhisheng Shi;
Dislocation density-dependent quality factors in InGaN quantum dot containing microdisks
2011 / American Institute of Physics
By: H. A. R. El-Ella; F. Rol; M. J. Kappers; K. J. Russell; E. L. Hu; R. A. Oliver;
Efficiency droop in InGaN/GaN multiple-quantum-well blue light-emitting diodes grown on free-standing GaN substrate
2011 / American Institute of Physics
By: Zhiqiang Liu; Tongbo Wei; Enqing Guo; Xiaoyan Yi; Liancheng Wang; Junxi Wang; Jinmin Li; Guohong Wang; Yi Shi; Ian Ferguson;
Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type GaN?
2007 / American Institute of Physics
By: D. G. Zhao; D. S. Jiang; J. J. Zhu; Z. S. Liu; S. M. Zhang; J. W. Liang; H. Yang;
Study of defects evolution in GaN layers grown by metal-organic chemical vapor deposition
2008 / American Institute of Physics
By: J. H. Jang; A. M. Herrero; B. Gila; C. Abernathy; V. Craciun;
The effect of wafer curvature on x-ray rocking curves from gallium nitride films
2008 / American Institute of Physics
By: M. A. Moram; M. E. Vickers; M. J. Kappers; C. J. Humphreys;
Carrier localization degree of In0.2Ga0.8N/GaN multiple quantum wells grown on vicinal sapphire substrates
2009 / American Institute of Physics
By: Zhen-Yu Li; Ming-Hua Lo; Ching-Hua Chiu; Po-Chun Lin; Tien-Chang Lu; Hao-Chung Kuo; Shing-Chung Wang;
Understanding x-ray diffraction of nonpolar gallium nitride films
2009 / American Institute of Physics
By: M. A. Moram; C. F. Johnston; J. L. Hollander; M. J. Kappers; C. J. Humphreys;
Dislocation density and band structure effects on spin dynamics in GaN
2009 / American Institute of Physics
By: Christelle Brimont; Mathieu Gallart; Atef Gadalla; Olivier Crégut; Bernd Hönerlage; Pierre Gilliot;
Strain relaxation properties of InAsyP1y metamorphic materials grown on InP substrates
2009 / American Institute of Physics
By: Mantu K. Hudait; Y. Lin; S. A. Ringel;
Analytical strain relaxation model for Si1xGex/Si epitaxial layers
2009 / American Institute of Physics
By: José Menéndez;
Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films
2009 / American Institute of Physics
By: A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; A. V. Markov; T. G. Yugova; E. A. Petrova; H. Amano; T. Kawashima; K. D. Scherbatchev; V. T. Bublik;
Distribution of dislocations in GaSb and InSb epilayers grown on GaAs (001) vicinal substrates
2009 / American Institute of Physics
By: Meicheng Li; Yongxin Qiu; Guojun Liu; Yutian Wang; Baoshun Zhang; Liancheng Zhao;
Carrier recombination processes in In-polar n-InN in regions of low residual electron density
2009 / American Institute of Physics
By: Yoshihiro Ishitani; Kenta Kato; Hitoshi Ogiwara; Song-Bek Che; Akihiko Yoshikawa; Xinqiang Wang;
Evaluation of the precursor decay anomaly in single crystal lithium fluoride
2009 / American Institute of Physics
By: Yukio Sano; Tomokazu Sano;
CuPt ordering in high bandgap GaxIn1xP alloys on relaxed GaAsP step grades
2009 / American Institute of Physics
By: M. A. Steiner; L. Bhusal; J. F. Geisz; A. G. Norman; M. J. Romero; W. J. Olavarria; Y. Zhang; A. Mascarenhas;
Dislocation-interaction-based model of strained-layer relaxation
2009 / American Institute of Physics
By: Klaus W. Schwarz; Yuhai Tu;
Evaluation of threading dislocation densities in In- and N-face InN
2010 / American Institute of Physics
By: C. S. Gallinat; G. Koblmüller; Feng Wu; J. S. Speck;
Strain relaxation in highly mismatched hexagonal heterosystems
2010 / American Institute of Physics
By: Vadim Lebedev;
Equilibrium strain and dislocation density in exponentially graded Si1xGex/Si (001)
2010 / American Institute of Physics
By: B. Bertoli; D. Sidoti; S. Xhurxhi; T. Kujofsa; S. Cheruku; J. P. Correa; P. B. Rago; E. N. Suarez; F. C. Jain; J. E. Ayers;
A study of the role of dislocation density, indium composition on the radiative efficiency in InGaN/GaN polar and nonpolar light-emitting diodes using drift-diffusion coupled with a Monte Carlo method
2010 / American Institute of Physics
By: I-Lin Lu; Yuh-Renn Wu; Jasprit Singh;
Effect of N/Ga flux ratio on transport behavior of Pt/GaN Schottky diodes
2011 / American Institute of Physics
By: Basanta Roul; Mahesh Kumar; Mohana K. Rajpalke; Thirumaleshwara N. Bhat; Neeraj Sinha; S. B. Krupanidhi; A. T. Kalghatgi;
Effect of N/Ga flux ratio on transport behavior of Pt/GaN Schottky diodes
2011 / American Institute of Physics
By: Basanta Roul; Mahesh Kumar; Mohana K. Rajpalke; Thirumaleshwara N. Bhat; Neeraj Sinha; S. B. Krupanidhi; A. T. Kalghatgi;
Surface diffusion and layer morphology of ((112¯2)) GaN grown by metal-organic vapor phase epitaxy
2012 / American Institute of Physics
By: Simon Ploch; Tim Wernicke; Duc V. Dinh; Markus Pristovsek; Michael Kneissl;
On the role of stacking faults on dislocation generation and dislocation cluster formation in multicrystalline silicon
2012 / American Institute of Physics
By: Maulid M. Kivambe; Torunn Ervik; Birgit Ryningen; Gaute Stokkan;
Structural and micromechanical analyses by polarized Raman spectroscopy of wurtzitic GaN films grown on (0001) sapphire substrates
2012 / American Institute of Physics
By: Wenliang Zhu; Sungkyun Park; Yuji Okumura; Andrea Leto; Giuseppe Pezzotti;
Dislocations and superconductivity in metallic monospirals at the room and positive temperatures
2014 / IEEE
By: Markov, G.A.; Rodionov, A.I.; Malyshev, V.N.;
High speed growth of square-like Si single bulk crystals with a size of 23 × 23 cm2 for solar cells using the noncontact crucible method
2014 / IEEE
By: Powell, Douglas M.; Morishita, Kohei; Murai, Ryota; Nakajima, Kazuo; Buonassisi, Tonio; Kivambe, Maulid;
Investigation of Lifetime-Limiting Defects After High-Temperature Phosphorus Diffusion in High-Iron-Content Multicrystalline Silicon
2014 / IEEE
By: Frey, A.; Hofstetter, J.; Zuschlag, A. S.; Fenning, D. P.; Buonassisi, T.; Hahn, G.; Bertoni, M. I.;
New advances in crystal growth of high purity berlinite: a new solvent the sulfuric acid
1988 / IEEE
By: Schwartzel, J.; Detaint, J.; Avinens, C.; Jumas, J.C.; Goiffon, A.; Philippot, E.; Zarka, A.;
The effect of dislocations on the open-circuit voltage of gallium arsenide solar cells
1990 / IEEE
By: Barnett, A.M.; Zolper, J.C.;
Selectively dry-etched n/sup +/-GaAs/N-InAlAs/InGaAs HEMTs for LSI
1990 / IEEE
By: Abe, M.; Mimura, T.; Sasa, S.; Harada, N.; Kuroda, S.;
GaAs MESFETs on InP substrates grown using chloride close-proximity reactor system
1990 / IEEE
By: Chu, S.N.G.; Smith, P.R.; Vella-Coleiro, G.P.; Yee, C.M.L.; Jeong, J.; Paczkowski, J.P.; Davisson, P.S.;
TEM analysis of failed bits and improvement of data retention properties in megabit-DRAMS
1990 / IEEE
By: Ayukawa, A.; Onishi, S.; Sakiyama, K.; Tanaka, K.;
Gettering of threading dislocations and oxide precipitates in SIMOX material
1989 / IEEE
By: Tomozane, M.; Liaw, H.M.;
Reassessment of defect models in graphite strip heater zone-melt recrystallized material by non-destructive thin film diagnostics
1989 / IEEE
By: de Kock, A.J.R.; Goemans, A.H.; Theunissen, M.J.J.; Baumgart, H.; Geijselaers, M.L.J.;
Selected area channeling pattern, defect etch and lifetime study of silicon implanted with oxygen
1988 / IEEE
By: Stafsudd, O.M.; Nelson, P.; Davis, G.E.; Roitman, P.;
Effect of substrate quality on GaAs solar cell performances
1988 / IEEE
By: Passoni, D.; Paletta, F.; Flores, C.;
The effect of dislocations on the performance of gallium arsenide solar cells
1988 / IEEE
By: Zolper, J.C.; Barnett, A.M.;
Minority carrier lifetime of GaAs on silicon
1988 / IEEE
By: Al-Jassim, M.M.; Ahrenkiel, R.K.; Haven, V.E.; Tobin, S.P.; Vernon, S.M.; Jones, K.M.; Dunlavy, D.J.;
Analysis for high-efficiency GaAs solar cells on Si substrates
1988 / IEEE
By: Hane, K.; Itoh, Y.; Amano, C.; Yamaguchi, M.; Al-Jassim, M.M.; Ahrenkiel, R.K.;
Influence of substrate resistivity on the degradation of silicon solar cell performance due to crystal defects
1988 / IEEE
By: Sopori, B.L.;
Modelling of the influence of dislocations on effective diffusion length and photocurrent of polycrystalline silicon cells
1988 / IEEE
By: Martinuzzi, S.; El Ghitani, H.;
A GaAs-on-Si solar cell for space use
1990 / IEEE
By: Ohmachi, Y.; Kadota, Y.; Ohara, T.;
Experimental study of solar cell performance versus dislocation density
1990 / IEEE
By: Keyes, B.M.; Jones, K.M.; Ahrenkiel, R.K.; Al-Jassim, M.M.; Tobin, S.P.; Vernon, S.M.;
Effects of radiation of InP cells epitaxially grown on Si and GaAs substrates
1990 / IEEE
By: Swartz, C.K.; Weinberg, I.; Wilt, D.M.; Brinker, D.J.;
Effect of emitter parameter variation on the performance of heteroepitaxial indium phosphide solar cells
1990 / IEEE
By: Flood, D.J.; Jain, R.K.;
Electrical and structural properties of diodes fabricated in thick, selectively deposited Si/Si/sub 1-x/Ge/sub x/ epitaxial layers
1992 / IEEE
By: Gibbons, J.F.; Noble, D.B.; Hoyt, I.L.; Jacowitz, R.D.; Nauka, K.; Kamins, T.I.;
Influence of dislocations on the DC characteristics of AlGaAs/GaAs heterojunction bipolar transistors
1992 / IEEE
By: Nakajima, O.; Ito, H.; Harris, J.S., Jr.; Furuta, T.;

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