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Topic: Capacitance-voltage Characteristics

Results

The Deal fast-surface states are probably deep-level impurities in the semiconductor

1985 / IEEE
By: Kump, H.J.; Bernstein, J.B.;

Dielectric Charging in Capacitive RF MEMS Switches: The Effect of Extended Durations of Electric Stress

2011 / IEEE
By: Tavassolian, N.; Papapolymerou, J.; Papaioannou, G.;

Compact Capacitance Model of Undoped or Lightly Doped Ultra-Scaled Triple-Gate FinFETs

2012 / IEEE
By: Dimitriadis, C.A.; Tassis, D.H.; Tsormpatzoglou, A.; Fasarakis, N.; Pappas, I.; Ghibaudo, G.; Bucher, M.; Papathanasiou, K.;

Design and Analysis of Non-Binary LDPC and IRA Modulation Codes Using Average Zero-Word Probability

2012 / IEEE
By: Mao-Ching Chiu;

Fast RF-CV Characterization Through High-Speed 1-port S-Parameter Measurements

2012 / IEEE
By: Schmitz, J.; Stulemeijer, J.; Tiggelman, M.P.J.; Steeneken, P.G.; Herfst, R.W.;

Study of Memory Performance and Electrical Characteristics for Metal Nanocrystal Memories

2012 / IEEE
By: Pei-Hong Cheng; Feng-Min Wu; Shi-Hua Huang;

Temperature and Light Induced Effects on the Capacitance of 4H-SiC Schottky Photodiodes

2012 / IEEE
By: Sciuto, A.; Mazzillo, M.; Raineri, V.; Roccaforte, F.; Catania, G.;

Conduction Mechanism of Se Schottky Contact to n-Type Ge

2012 / IEEE
By: Yang-Kyu Park; Janardhanam, V.; Chel-Jong Choi; Kwang-Soon Ahn; Hyung-Joong Yun;

Metal-titanium dioxide-silicon capacitors

1974 / IEEE
By: Grannemann, W.W.; Brown, W.D.;

P-type tunneling FET on Si (110) substrate with anisotropic effect

2011 / IEEE / 978-1-61284-244-8
By: Yang, C.-L.; Kao, C.-Y.; Lee, M.H.; Lee, C.-H.;

Segmentation of liver tumor with local C-V level set

2011 / IEEE / 978-1-4244-9439-2
By: Zhaohui Luo;

Conditioning circuit for capacitive position sensor with nano-scale precision based on AC excitation principle

2011 / IEEE / 978-1-61284-466-4
By: Quan Zhou; Xiaozhao Wang; Xiaohui Xiao; Yang Piao; Pinkuan Liu; Kun Fan;

High sensitivity graphite-Pd (Pt) nanoparticles-InP Schottky diode hydrogen sensor

2011 / IEEE / 978-3-8007-3356-9
By: Grym, J.; Yatskiv, R.; Piksova, K.; Zdansky, K.;

Application of the multi-level set method in image segmentation

2011 / IEEE / 978-1-61284-774-0
By: Ya-Qin Guo; Xin-Qiang Qin; Xian-Bao Duan;

C-V measurements of single vertical nanowire capacitors

2011 / IEEE / 978-1-61284-244-8
By: Karg, S.; Moselund, K.E.; Mensch, P.; Riel, H.; Schmid, H.; Bjork, M.T.; Lortscher, E.;

The Lanthanum oxide capping layer induced flat-band roll-off behaviors in high-�/metal-gate NMOSFETs with 28nm CMOS technology

2011 / IEEE / 978-1-4577-0378-2
By: Yean-Kuen Fang; Wen-Han Hung; Feng-Renn Juang; Tzyy-Ming Cheng; Tsai-Fu Chen; Ma, W.C.-Y.;

Interface states at high- : /InGaAs interface: H2O vs. O3 based ALD dielectric

2011 / IEEE / 978-1-61284-244-8
By: Chen, Y.T.; Veksler, D.; Madan, H.; Datta, S.; Bersuker, G.; Goel, N.; Huang, J.;

Scaling of SOI FinFETs down to fin width of 4 nm for the 10nm technology node

2011 / IEEE / 978-1-4244-9949-6
By: Guillorn, M.; Chang, J.B.; Haensch, W.E.; Ott, J.A.; Solomon, P.M.; Pyzyna, A.; Engelmann, S.U.; Lin, C.-H.;

Research on optimization Carrier Phase-Shifted SPWM of cascaded STATCOM

2011 / IEEE / 978-1-4577-0536-6
By: Zhang Jinggang; Zeng Guang; Su Zhonglai;

Influence of poling on RF and pulsed DC sputtered PZT thin films

2011 / IEEE / 978-1-4577-1163-3
By: Karakaya, K.; Jambunathan, M.; Van Schaijk, R.; Vullers, R.; Elfrink, R.;

A Unified Method Based on Wavelet Transform and C-V Model for Crack Segmentation of 3D Industrial CT Images

2011 / IEEE / 978-1-4577-1560-0
By: Bi Bi; Li Zeng; Linghui Liu;

Active contour driven by local region force

2011 / IEEE / 978-1-61284-486-2
By: Jianwen Li;

GALBF: Geodesic-Aided LBF method

2011 / IEEE / 978-1-61284-088-8
By: Guotao Wang; Haiyong Xu;

Tire impressions image segmentation algorithm based on C-V model without re-initialization

2011 / IEEE / 978-1-61284-486-2
By: Wang Yunpeng; Wang Zhen; Li Shiwu;

Segmentation of shadow images using IR based adaptive Level set model

2011 / IEEE / 978-1-61284-653-8
By: Zaheeruddin, S.; Reddy, G.R.; Rao, R.R.; Baddiri, N.;

Charge trapping/detrapping in HfO2-based MOS devices

2011 / IEEE / 978-1-4577-1236-4
By: Lipovetzky, J.; Garcia Inza, M.A.; Carbonetto, S.H.; Salomone, L.S.; Faigon, A.; Campabadal, F.; Redin, E.G.;

Planar heterostructures based on organic semiconductor

2011 / IEEE / 978-1-4577-2112-0
By: Reboun, J.; Hamacek, A.; Pretl, S.; Hromadka, K.; Dzugan, T.;

The study of flat-band voltage shift using arsenic ion-implantation with High-k/Metal Inserted Poly Si gate stacks

2011 / IEEE / 978-1-4577-0708-7
By: KeeJeung Lee; BongSeok Jeon; SeungMi Lee; YunHyuck Ji; BeomYong Kim; SungKi Park; Kwon Hong;

Properties of the Ga2O3 films obtained by anodization

2011 / IEEE / 978-1-4577-1070-4
By: Petrova, Y.S.; Yaskevich, T.M.; Kalygina, V.M.;

Simultaneous segmentation and inhomogeneity correction in magnetic resonance images

2011 / IEEE / 978-1-4577-1589-1
By: Carrino, J.A.; Hoover-Fong, J.; Yue Li; Mori, S.;

Comparison of charge injection in Si02 and Si3N4 for capacitive RF MEMS switches

2011 / IEEE / 978-1-4577-1769-7
By: Hanke, U.; Gang Li; Xuyuan Chen;

Segmentation of Hippocampus in MRI Images Based on the Improved Level Set

2011 / IEEE / 978-1-4577-1085-8
By: Xiangman Song; Dan Zhang; Shuying Zhao; Wenjun Tan;

Evaluation of TiO2/SiO2 dielectric thin films to overcome the challenges of CMOS scaling

2011 / IEEE / 978-1-61284-846-4
By: Arya, S.K.; Ghlwat, M.; Rathee, D.;

Evaluation of TiO2/SiO2 dielectric thin films to overcome the challenges of CMOS scaling

2011 / IEEE / 978-1-61284-846-4
By: Ghlwat, Mukesh; Rathee, Davinder; Arya, Sandeep K.;

Medical image segmentation based on improved level set

2011 / IEEE / 978-1-4244-9352-4
By: Liu Jianyuan; Liang Junting; Wang Mingquan; Feng Xiaoxia;

Effects of fluorine incorporation on the electrical properties of silicon MOS capacitor with La2O3 gate dielectric

2011 / IEEE / 978-1-4577-1997-4
By: Huang, X.D.; Qian, L.X.; Lai, P.T.;

Vertical GaN schottky barrier diode on an N-face GaN layer formed by ELOG and laser-lift-off technique for high-power application

2011 / IEEE / 978-1-4577-1997-4
By: Young-Jin Kwon; Sung-Ho Hahm; Heon-Bok Lee; Do-Kywn Kim; Chang-Ju Lee;

A robust improved Chan-Vese model based on Gaussian regularizing level set

2011 / IEEE / 978-1-4244-9306-7
By: MeiQing Wang; Zhengshou Feng; Nengyuan Pan;

Metal-Oxide-Semiconductor Devices on GaAs with High-k Dielectric and MOCVD Grown ZnO Interface Passivation Layer

2011 / IEEE / 978-1-4577-2037-6
By: Kundu, S.; Banerji, P.;

Si3N4/SiO2 dielectric stacks for high reliable capacitive RF MEMS switch

2011 / IEEE / 978-1-4577-1516-7
By: Hanke, U.; Gang Li; Xuyuan Chen; Haisheng San; Deokki Min; Zaijun Cheng;

Modeling the capacitance-voltage characteristics of the trench Insulated Gate Bipolar Transistor (TIGBT) by minimizing its Helmholtz Free Energy

2011 / IEEE / 978-1-4577-1756-7
By: Rahman, M.; Barycza, M.; Gunther, N.; Sattar, A.;

Modeling the non-uniform distribution of interface traps

2011 / IEEE / 978-1-4577-0586-1
By: Esqueda, I.S.; Barnaby, H.J.;

Comparative analysis of MIS capacitive structures with high-K dielectrics under gamma, ¹⁶O and p radiation

2011 / IEEE / 978-1-4577-0586-1
By: Sambuco Salomone, L.; Quinteros, C.; Campabadal, F.; Palumbo, F.; Redin, E.; Faigon, A.; Zabala, M.; Rafi, J.M.;

High performance charge-trapping flash memory with highly-scaled trapping layer

2011 / IEEE / 978-1-4577-1431-3
By: Tsai, C.Y.; Chin, A.; Hong Wang;

Quantum Mechanical Treatment on Modeling of Drain Current, Capacitances and Transconductances for Thin Film Undoped Symmetric DG MOSFETs

2011 / IEEE / 978-1-4577-2037-6
By: Baruah, R.K.; Bora, N.;

Evaluation of COTS silicon carbide photodiodes for a radiation-hard, low-energy x-ray spectrometer

2011 / IEEE / 978-1-4673-0120-6
By: Kippen, R.M.; Distel, J.R.; Terry, J.R.; Wallace, M.S.; Schirato, R.;

Atomic layer deposited Al2O3 dielectrics using ozone functionalization of graphene

2011 / IEEE / 978-1-4577-2141-0
By: Jandhyala, S.; Jiyoung Kim; Bongki Lee; Mordi, G.;

Single-walled nanotube MIS memory devices

2011 / IEEE / 978-1-4577-1516-7
By: Alba-Martin, M.; Zeze, D.A.; Mabrook, M.F.; Ashall, D.; Ayesh, A.; Atherton, J.J.; Al Ghaferi, A.; Petty, M.C.; Gallant, A.J.; Rosamond, M.C.; Firmager, T.;

Low-voltage organic memory transistors

2011 / IEEE / 978-1-4577-1516-7
By: Ashall, D.; Fakher, S.J.; Mabrook, M.F.;

InGaN/GaN microwave varactors with high Q, high-breakdown voltage and high linearity

2011 / IEEE / 978-1-4577-1756-7
By: Siyuan Gu; Lingquan Wang; Wei Lu; Asbeck, P.M.; Yu, P.K.L.; Aplin, D.P.R.;

Improvement of the GaSb/Al2O3 interface using a thin InAs surface layer

2011 / IEEE / 978-1-4577-1756-7
By: Greene, A.; Oktyabrsky, S.; Moore, R.; Tokranov, V.; Madisetti, S.; Nagaiah, P.; Yakimov, M.;

A Novel Supervised C-V Segmentation

2011 / IEEE / 978-1-4577-1151-0
By: Yi Zhen; Hai Zhang;

Discriminating gas concentrations in extreme temperature environments

2011 / IEEE / 978-1-4244-9289-3
By: Wright, N.G.; Furnival, B.J.D.; Horsfall, A.B.;

Generic, orthogonal and low-cost March Element based memory BIST

2011 / IEEE / 978-1-4577-0152-8
By: van de Goor, A.J.; Kukner, H.; Hamdioui, S.;

An analyzing of anomalous peak in the capacitance-voltage characteristics at Hg/GaN Schottky contact

2011 / IEEE / 978-1-4577-0796-4
By: Cheng, L.H.; Zheng, Y.D.; Zhang, R.; Xiu, X.Q.; Hua, X.M.; Zhao, H.; Xie, Z.L.; Lu, H.; Cheng, W.; Yu, L.; Han, P.;

Simulation studies of Negative Bias Temperature Instability in FinFETs using two-stage model

2012 / IEEE / 978-1-4577-1546-4
By: Bindu, B.; Narendiran, A.;

Combined C-V/I-V front-end-of-line measurement

2012 / IEEE / 978-1-4673-1030-7
By: Polonsky, S.; Ketchen, M.; Hargrove, M.; Jiun-Hsin Liao; Realov, S.;

Two dimensional current simulation of amorphous silicon thin-film transistors with extracted density of states by C-V characteristics and mobility measurement

2012 / IEEE / 978-1-4577-0798-8
By: Jaeho Lee; Jaehong Lee; Seunghyun Jang; Hyungcheol Shin;

Barriers for current transport in CIGS structures

2011 / IEEE / 978-1-4244-9965-6
By: Macielak, K.; Urbaniak, A.; Igalson, M.; Spiering, S.; Barreau, N.; Tomassini, M.;

Efficient table-based I-Q behavioral model for high-speed digital buffers/drivers

2012 / IEEE / 978-1-4673-1504-3
By: Pedro, J.C.; Cunha, T.R.; Teixeira, H.M.; Dghais, W.;

A Investigation of E/W Cycle Characteristics for 2y-nm MLC NAND Flash Memory Devices

2012 / IEEE / 978-1-4673-1081-9
By: Pyunghwa Kim; Sungwook Park; Sunghoon Cho; Sangjo Lee; YeonJoo Jeong; Milim Park; Gihyun Bae; Kun-Ok Ahn; Myoung Kwan Cho; Hyunyoung Shim; SungPyo Lee;

An efficient model for trap analysis in C-V measurement for AlGaN/GaN heterostructure

2012 / IEEE / 978-1-4673-1257-8
By: Liang Li; Yue Hao; Qian-Wei Kuang; Jin-Cheng Zhang; Lin-An Yang; Wei Mao;

Image segmentation by improved level set evolution algorithm

2012 / IEEE / 978-1-4673-2237-9
By: Yu Cheng; Tingfang Yan; Haiying Liu; Meng, M.Q.-H.; Zhang, D.W.;

Using capacitance methods for interface trap level density extraction in graphene field-effect devices

2012 / IEEE / 978-1-4673-0238-8
By: Melnik, E.V.; Zebrev, G.I.; Batmanova, D.K.;

Germanium Channel P-Mosfet with TiO2/Al2O3 Bilayer High-K Gate Stacks and Solutions for Metal/TiO2 Interface Stability

2012 / IEEE / 978-1-4577-1865-6
By: Liangliang Zhang; McIntyre, P.C.; Gungi, M.;

Intelligent CMOS control of RF MEMS capacitive switches

2012 / IEEE / 978-1-4673-1088-8
By: Halder, S.; Wang, W.; Ding, G.; Goldsmith, C. L.; Hwang, J. C. M.; Molinero, D.; Palego, C.;

Novel level set model for the image segmentation based on parzen-window

2012 / IEEE / 978-1-4673-0089-6
By: Zhang, YuanZhi; Li, ChuanLong; Li, Ying;

High-Performance Ge MOS Capacitors by $\hbox{O}_{2}$ Plasma Passivation and $\hbox{O}_{2}$ Ambient Annealing

2011 / IEEE
By: Delabie, A.; Caymax, M.; Shaoren Deng; Lin, D.; Schaekers, M.; Yulong Jiang; Qi Xie; Detavernier, C.; Deduytsche, D.; Xinping Qu;

Physical and Electrical Analysis of Post-$ \hbox{HfO}_{2}$ Fluorine Plasma Treatment for the Improvement of $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs

2012 / IEEE
By: Fei Zhou; Fei Xue; Yanzhen Wang; Yen-Ting Chen; Lee, J.C.;

High Hole-Mobility Strained-$\hbox{Ge/Si}_{0.6} \hbox{Ge}_{0.4}$ P-MOSFETs With High-K/Metal Gate: Role of Strained-Si Cap Thickness

2012 / IEEE
By: Hoyt, J.L.; Hashemi, P.;

Comparative Analysis of MIS Capacitance Structures With High-k Dielectrics Under Gamma, $^{16}$ O and p Radiation

2012 / IEEE
By: Palumbo, F.; Salomone, L. S.; Quinteros, C. P.; Campabadal, F.; Redin, E.; Faigon, A.; Zabala, M.; Rafi, J. M.;

Fast and Accurate Characterization of MOS and Interconnect Capacitance Using Direct Charge Measurement (DCM)

2013 / IEEE
By: Goto, M.; Takano, K.; Taniguchi, J.; Miyake, Y.;

Pulsed RF oscillations on a nonlinear capacitive transmission line

2013 / IEEE
By: Rossi, J.O.; Schamiloglu, E.; Liew, A.C.; Kuek, N.S.;

Active contour driven by local entropy energy function for segmentation and bias correction

2013 / IEEE
By: Cui, Zhaohua; Gao, Liqun; Pan, Gai;

Symmetric toggle structured MEMS linear variable capacitor with large tunning ratio

2013 / IEEE
By: Chenxu Zhao; Ling Li; Zewen Liu; Mengwei Li;

Characterization method of the dynamics of the trapped charge in contactless capacitive MEMS

2014 / IEEE
By: Feely, Orla; Blokhina, Elena; Dominguez-Pumar, Manuel; Pons-Nin, Joan; Gorreta, Sergi;

Electrical characterization of organic/inorganic hybrid solar cells based on silicon nanopillars-poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate)

2014 / IEEE
By: Ayon, Arturo A; Pudasaini, Pushpa Raj; Sharma, Manisha;

A study of adhesion forces in thick epitaxial polysilicon under dynamic impact loading

2015 / IEEE
By: Ardito, Raffaele; Dellea, Stefano; Langfelder, Giacomo; Tocchio, Alessandro; Rizzini, Francesco; De Masi, Biagio;

Design of a low cost signal conditioning circuit for self-compensated non contact capacitive type multi threshold liquid level sensor

2014 / IEEE
By: Babu, C. S. Suresh; Manohar, Premila;

A quasi-differential C-V convertor for touch screen panel controller IC

2014 / IEEE
By: Jeong, Moonsuk; Kim, Soo-Won; Jo, Byeonghak; Park, Tahjun; Kwon, Youngil;

Cross-correlation of electrical measurements via physics-based device simulations: Linking electrical and structural characteristics

2015 / IEEE
By: Padovani, A.; Bersuker, G.; Veksler, D.; Cavicchioli, R.; Bertocchi, M.; Vandelli, L.; Larcher, L.;

IEEE Guide for Grounding of Instrument Transformer Secondary Circuits and Cases

2015 / IEEE

Thermal and Electrical Reliability Tests of Air-Gap Through-Silicon Vias

2015 / IEEE
By: Liu, R.; Huang, C.; Wang, Z.;

Sub-Bandgap Photonic Capacitance-Voltage Method for Characterization of the Interface Traps in Low Temperature Poly-Silicon Thin-Film Transistors

2015 / IEEE
By: Bae, H.; Hwang, J.S.; Kim, D.M.; Kim, D.H.; Choi, S.; Lee, J.;

Environment-Dependent Bias Stress Stability of P-Type SnO Thin-Film Transistors

2015 / IEEE
By: Jeong, C.; Choi, Y.; Han, Y.; Kwon, H.; Song, S.; Lee, D.;

Detailed Derivation and Minimization of the Equivalent Parasitic Capacitances of a High-Voltage Multiplier Based on the Complete Model

2015 / IEEE
By: Wang, J.; Ferreira, J.A.; de Haan, S.W.H.;

Sensitivity Enhancement of Electrolyte–Insulator–Semiconductor Sensors Using Mesotextured and Nanotextured Dielectric Surfaces

2015 / IEEE
By: Bal, V.; Kumar, N.; Agarwal, A.; Dastidar, S.; Panda, S.;

Characterization and Modeling of a-IGZO TFTs

2015 / IEEE
By: Migliorato, P.; Jang, J.; Martivenga, M.; Seok, M.; Um, J. G.; Chowdhury, M. D. H.;

Positive Shift in Threshold Voltage for Reactive-Ion- Sputtered Al2O3/AlInN/GaN MIS-HEMT

2014 / IEEE
By: DasGupta, A.; DasGupta, N.; Karumuri, N.; Turuvekere, S.; Dutta, G.;

Anomalous Staircase CV Characteristics of InGaSb-on-Insulator FET

2014 / IEEE
By: Kibria, M.G.; Islam, M.S.; Alam, M.N.K.; Islam, M.R.;

Variational thermodynamic and Finite Element analysis models of the Metal-Oxide-Semiconductor Capacitor

2014 / IEEE
By: Sattar, Md A; Patel, Krunal V.; Santiago, John Rose; Rahman, Mahmudur; Gunther, Norman G.;

A novel modeling of TSV MOS capacitance by finite difference method

2014 / IEEE
By: Liu, Sheng; Huang, Cheng; Zhuang, Wei; Tang, Wanchun; Zhu, Jianping;

Thermal and electrical tests of air-gap TSV

2014 / IEEE
By: Wang, Zheyao; Wu, Dong; Huang, Cui;

Switching simulation of SiC high-power module with low parasitic inductance

2014 / IEEE
By: Ishida, Masaaki; Hasegawa, Kohei; Yamamoto, Takashi; Takao, Kazuto;

Admittance spectroscopy using for the determination of parameters of Si nanoclusters embedded in SiO2

2014 / IEEE
By: Tretyak, O. V.; Vasyliev, I. S.; Marin, V. V.; Ilchenko, V. V.; Evtukh, A. A.; Bratus, O. L.;

Optimized Pre-Treatment Process for MOS-GaN Devices Passivation

2014 / IEEE
By: Ares, R.; Aimez, V.; Souifi, A.; Alam, E. A.; Maher, H.; Chakroun, A.; Jaouad, A.;

Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs

2014 / IEEE
By: Nath, D. N.; Krishnamoorthy, S.; Park, P. S.; Hung, T.-H.; Rajan, S.;

The investigation of TCO/CdS/CdTe heterojunctions by C-U and C-f measurements: Experiment and modeling

2013 / IEEE
By: Rusu, Marin; Ferekides, Chris; Lux-Steiner, Martha; Gasin, Petru; Fedorov, Vladimir; Vatavu, Sergiu; Rotaru, Corneliu;

Using impedance spectroscopy for enhanced capacitance-voltage measurements on solar cells with multiple space charge regions and a structured surface

2013 / IEEE
By: Gimpel, Thomas; Guenther, Kay-Michael; Kontermann, Stefan; Schade, Wolfgang;

Estimating pyramid density of a random-textured surface by capacitance-voltage measurement of c-Si solar cells

2013 / IEEE
By: Wang, Xufeng; Alam, Muhammad A.;

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