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Topic: Bulk Effect

Results

A Wideband Merged CMOS Active Mixer Exploiting Noise Cancellation and Linearity Enhancement

2014 / IEEE
By: Wang, H.; Guo, B.; Yang, G.;

MOS small-signal conductances in the weak avalanche multiplication region

1992 / IEEE
By: Cserveny, S.;

Degradation of a-Si:H solar cells: new evidence for a bulk effect

1994 / IEEE / 0-7803-1460-3
By: Wyrsch, N.; Shah, A.;

Characterization and model of 4-terminal RF CMOS with bulk effect

2004 / IEEE / 0-7803-8262-5
By: Yeh, T.J.; Wang, Y.J.; Yang, M.T.; Young, K.L.; Chia, Y.T.; Ho, P.P.C.;

Study of impedance parameters of cerium modified lead zirconate titanate ceramics

2010 / IEEE
By: Tiwari, B.; Choudhary, R.N.P.;

Substrate Noise Coupling Mechanisms in Lightly Doped CMOS Transistors

2010 / IEEE
By: Bronckers, S.; Rolain, Y.; Vandersteen, G.; Van der Plas, G.;

Al-Mn Transition Edge Sensors for Cosmic Microwave Background Polarimeters

2011 / IEEE
By: George, E.M.; Lueker, M.; Holzapfel, W.L.; Irwin, K.D.; Yoon, K.W.; Ullom, J.N.; Shirokoff, E.; Niemack, M.D.; Lowell, P.; Hubmayr, J.; Cho, H.-M.; Schmidt, D.R.; O'Neil, G.C.;

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