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Electric-field-driven dielectric breakdown of metal-insulator-metal hafnium silicate
By: Byoung Hun Lee; Chang Yong Kang; Paul Kirsch; Dawei Heh; Chadwin D. Young; Hongbae Park; Jiwoon Yang; Gennadi Bersuker; Siddarth Krishnan; Rino Choi; Hi-Deok Lee;
The breakdown characteristics of the crystalline and amorphous hafnium (Hf) silicates have been studied using metal-insulator-metal capacitors. It is found that, although the distribution of time-dependent dielectric breakdown and charge to breakdown (QBD) are affected by crystallization, the breakdown is primarily controlled by the electric field rather than charge fluence.