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Effects of metal gate-induced strain on the performance of metal-oxide-semiconductor field effect transistors with titanium nitride gate electrode and hafnium oxide dielectric

By: Chang Yong Kang; Rino Choi; M. M. Hussain; Jinguo Wang; Young Jun Suh; H. C. Floresca; Moon J. Kim; Jiyoung Kim; Byoung Hun Lee; Raj Jammy;

2007 / American Institute of Physics


In this letter, the authors investigate the strain induced by titanium nitride (TiN) electrode and effective work function (EWF) tuning for metal-oxide-semiconductor field effect transistors (MOSFETs). Scaling of TiN thickness was found to be effective both in increasing tensile stress on Si substrates and in lowering the EWF of metal gate n-MOSFETs. The device with 3nm TiN as a gate electrode showed favorable threshold voltage (Vth) for n-MOSFETs as well as higher channel electron mobility by 17% compared to the device with 20nm TiN film.

Related Topics
Electron Mobility