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Effects of gate edge profile on off-state leakage suppresion in metal gate/high-k dielectric n-type metal-oxide-semiconductor field effect transistors

By: Chang Yong Kang; Rino Choi; S. C. Song; B. H. Lee;

2007 / American Institute of Physics


The impact of process integration on device characteristics of metal gate/high-k device was investigated systematically. It was found that the profile of gate stack edge and following processes should be optimized to achieve low gate-induced drain leakage, gate leakage, and high drive current. For low standby power applications, an offset of high-k dielectric layer was more desirable. With an optimized gate edge profile, the authors achieved 100 times lower off-state current compared to previous reported results. However, the saturation current degradation was minimal.