Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Temperature effects on metal-alumina-nitride-oxide-silicon memory operations

By: Andrea Padovani; Luca Larcher; Dawei Heh; Gennadi Bersuker; Vincenzo Della Marca; Paolo Pavan;

2010 / American Institute of Physics

Description

We present a detailed investigation of temperature effects on the operation of TaN/Al2O3/Si3N4/SiO2/Si (TANOS) memory devices. We show that not only retention but also program and erase operations are affected significantly by temperature. Using a large set of experimental data and simulations on a variety of TANOS stacks, we show that the temperature dependence of TANOS program and erase operations can be explained by accounting for that the alumina dielectric constant increases by 20%25% over a 125 K temperature range.

Related Topics
Aluminium Compounds