Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Characterization of fast charge trapping in bias temperature instability in metal-oxide-semiconductor field effect transistor with high dielectric constant

By: Minseok Jo; Seonghyun Kim; Joonmyoung Lee; Seungjae Jung; Ju-Bong Park; Hyung-Suk Jung; Rino Choi; Hyunsang Hwang;

2010 / American Institute of Physics


We used pulse bias temperature instability measurements to investigate the energy distributions of fast charge trapping sources to understand the origin of fast charge traps in an HfO2 device. The trap energy level was extracted using a trap-to-band tunneling model by changing the measurement delay time. The fast electron traps in an n-channel metal oxide semiconductor field effect transistors (MOSFET) exist in a 1 eV range below the bottom of the HfO2 conduction band. In the case of a p-channel MOSFET, the fast hole traps exist in the range 12 eV above the top of the HfO2 valence band, which could be attributed to a formation of negatively charged NO defects.

Related Topics
Conduction Bands