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High performance airbrushed organic thin film transistors

By: Calvin K. Chan; Lee J. Richter; Brad Dinardo; Cherno Jaye; Brad R. Conrad; Hyun Wook Ro; David S. Germack; Daniel A. Fischer; Dean M. DeLongchamp; David J. Gundlach;

2010 / American Institute of Physics


Spray-deposited poly-3-hexylthiophene (P3HT) transistors were characterized using electrical and structural methods. Thin-film transistors with octyltrichlorosilane treated gate dielectrics and spray-deposited P3HT active layers exhibited a saturation regime mobility as high as 0.1cm2V1s1, which is comparable to the best mobilities observed in high molecular mass P3HT transistors prepared using other methods. Optical and atomic force microscopy showed the presence of individual droplets with an average diameter of 20¼m and appreciable large-scale film inhomogeneities. Despite these inhomogeneities, near-edge x-ray absorption fine structure spectroscopy of the device-relevant channel interface indicated excellent orientation of the P3HT.

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