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Origin of tensile stress in the Si substrate induced by TiNHfO2 metal gate/high-k dielectric gate stack

By: J. G. Wang; Jiyoung Kim; Chang Yong Kang; Byoung Hun Lee; Raj Jammy; Rino Choi; M. J. Kim;

2008 / American Institute of Physics

Description

The tensile stress induced by the metal TiN film in the atomic layer deposited HfO2TiN stacks has been found from the crystallite coalescence mechanism of the VolmerWeber-type growth mode at the early stage of the TiN film formation. The higher tensile

Related Topics
Atomic Layer Deposition