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Origin of tensile stress in the Si substrate induced by TiNHfO2 metal gate/high-k dielectric gate stack
The tensile stress induced by the metal TiN film in the atomic layer deposited HfO2TiN stacks has been found from the crystallite coalescence mechanism of the VolmerWeber-type growth mode at the early stage of the TiN film formation. The higher tensile
Atomic Layer Deposition