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Characteristics of Al2O3 gate dielectrics partially fluorinated by a low energy fluorine beam

By: Sung Woo Kim; Byoung Jae Park; Se Koo Kang; Bo Hyun Kong; Hyung Koun Cho; Geun Young Yeom; Sungho Heo; Hyunsang Hwang;

2008 / American Institute of Physics


The partial fluorination of Al2O3 gate dielectrics was examined by exposing an oxide-nitride-aluminum oxide (ONA) stack to a low energy fluorine beam, and its effect on the properties of the ONA was investigated. Exposing ONA to about 10 eV fluorine beam

Related Topics
Aluminium Compounds