Use this resource - and many more! - in your textbook!
AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.
Characteristics of Al2O3 gate dielectrics partially fluorinated by a low energy fluorine beam
By: Sung Woo Kim; Byoung Jae Park; Se Koo Kang; Bo Hyun Kong; Hyung Koun Cho; Geun Young Yeom; Sungho Heo; Hyunsang Hwang;
The partial fluorination of Al2O3 gate dielectrics was examined by exposing an oxide-nitride-aluminum oxide (ONA) stack to a low energy fluorine beam, and its effect on the properties of the ONA was investigated. Exposing ONA to about 10 eV fluorine beam