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1.2kV class SiC MOSFETs with improved performance over wide operating temperature

By: Losee, P.; Bolotnikov, A.; Stevanovic, L.; Stolkarts, V.; Zhu, X.; Olson, R.; Sandvik, P.; Hartig, M.; Gowda, A.; Esler, D.; Yu, L.; Beaupre, R.; Stum, Z.; Kennerly, S.; Dunne, G.; Sui, Y.; Kretchmer, J.; Johnson, A.; Arthur, S.; Saia, R.; McMahon, J.; Lilienfeld, D.;

2014 / IEEE


This item from - IEEE Conference - 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - In this paper, we report on 1.2kV SiC MOSFETs rated to Tj, max=200°C, exhibiting improved performance characteristics across operating temperature. Our devices show stable, rugged and reliable operation when subjected to industry standard qualification tests. Low on-resistance of 35mOhm/79mOhm at Tj=25°C and 47mOhm/103mOhms at Tj=150°C are shown for 0.1cm2 and 0.2cm2 die. 1000 hour High-Temperature Gate-Bias (HTGB) tests at Tj=200°C show excellent threshold stability with less than 5% parametric shift observed. High-Temperature Reverse Bias (HTRB) at Tj=200°C/VDS=960V also show stable and reliable operation. Single-pulse avalanche energies of over EAv=1.75J are obtained with 0.1cm2 MOSFETs.