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Performance of ultrathin alternative diffusion barrier metals for next - Generation BEOL technologies, and their effects on reliability

By: Nogami, T.; Chae, M.; Edelstein, D.; Spooner, T.; Huang, E.; Bonilla, G.; Motoyama, K.; Simon, A.; Straten, O.; Penny, C.; Shaw, T.; Shobha, H.; Li, J.; Cohen, S.; Hu, C-K.; Zhang, X.; He, M.; Tanwar, K.; Patlolla, R.; Chen, S-T.; Kelly, J.; Lin, X.;

2014 / IEEE


This item from - IEEE Conference - 2014 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC) - In order to maximize Cu volume and reduce via resistance, barrier thickness reduction is a strong option. Alternative barriers for next-generation BEOL were evaluated in terms of barrier performance to O2 and Cu diffusion, and effects on reliability. A clear correlation of O2 barrier performance to electromigration was observed, suggesting that the key role of the barrier layer is to prevent oxidation of Cu or the Cu/barrier interface. Long-throw PVD-TaN showed superior O2 barrier performance to alternative metals such as PEALD-TaN, thermal ALD-TaN, -TaN(Mn) and - MnN and MnSiO3 self-forming barrier.