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Accurate RRAM transient currents during forming

By: Shrestha, P.; Baumgart, H.; Cheung, K. P.; Vaz, C.; Kim, J-H.; Campbell, J. P.; Nminibapiel, D.;

2014 / IEEE


This item from - IEEE Conference - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - The magnitude of overshoot current during forming has been shown to be a serious issue. Recently we showed that the overshoot duration is equally important in impacting device performance. Shorter duration overshoot in the range of ns yields better performance, suggesting extremely short forming pulse to be desirable. But investigation of such short forming transients is severely limited experimentally due to parasitic. In this study we demonstrate a technique to accurately de-embed these parasitic components yielding accurate forming current transients in the ps range, paving the road to careful study of the forming process.