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Mapping Defect Density in MBE Grown In0.53 Ga0.47 As Epitaxial Layers on Si Substrate Using Esaki Diode Valley Characteristics
By: Thomas, P.; Majumdar, K.; Kirsch, P.D.; Hobbs, C.; Rommel, S.L.; Droopad, R.; Loh, W.; Filmer, M.; Romanczyk, B.; Pawlik, D.; Matthews, K.; Hung, P.; Gaur, A.;
2014 / IEEE
This item from - IEEE Transaction - Components, Circuits, Devices and Systems - Growing good quality III–V epitaxial layers on Si substrate is of utmost importance to produce next generation high-performance devices in a cost effective way. In this paper, using physical analysis and electrical measurements of Esaki diodes, fabricated using molecular beam epitaxy grown