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Extraction of the Interface State Density of Top-Gate Graphene Field-Effect Transistors

By: Kim, Y.J.; Xu, Y.; Lee, B.H.; Lee, Y.G.; Kim, Y.;

2015 / IEEE

Description

This item from - IEEE Letter - Engineered Materials, Dielectrics and Plasmas - Novel electrical measurement method, discharge current analysis (DCA), is introduced to extract the density and energy distribution of charge traps at the dielectric interface of top-gate graphene field-effect transistors. Using DCA method, the highest charge trap density ˜ 1013 (cm -2⋅ eV -1 ) is extracted at Fermi level ˜ 0.4 eV. This is the first quantitative estimation of trap density at a specific Fermi level of graphene.