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Controlling the Fermi Level in a Single-Layer Graphene QHE Device for Resistance Standard
By: Fukuyama, Y.; Elmquist, R.E.; Huang, L.; Yang, Y.; Liu, F.; Kaneko, N.;
2015 / IEEE
This item from - IEEE Transaction - Power, Energy and Industry Applications - The National Metrology Institute of Japan/ National Institute of Advanced Industrial Science and Technology (NMIJ/AIST) and the National Institute of Standards and Technology (NIST) are collaborating on the development of graphene-based quantized Hall resistance devices. We formed graphene films on silicon carbide (0001) substrates and processed the samples into Hall bar devices using the NIST clean room facility. The electronic transport properties have been observed at the NIST and NMIJ/AIST. Hydrogen intercalation and photochemical gating were employed to control the Fermi level in the samples. For the first method, the Fermi level was observed to move across the Dirac point. For the latter technique, it moved closer to the Dirac point.