Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

10nm FINFET technology for low power and high performance applications

By: Guo, D.; Shang, H.; Seo, K.; Haran, B.; Standaert, T.; Gupta, D.; Alptekin, E.; Bae, D.; Bae, G.; Chanemougame, D.; Cheng, K.; Cho, J.; Hamieh, B.; Hong, J.; Hook, T.; Jung, J.; Kambhampati, R.; Kim, B.; Kim, H.; Kim, K.; Kim, T.; Liu, D.; Mallela, H.; Montanini, P.; Mottura, M.; Nam, S.; Ok, I.; Park, Y.; Paul, A.; Prindle, C.; Ramachandran, R.; Sardesai, V.; Scholze, A.; Seo, S.; Southwick, R.; Strane, J.; Sun, X.; Tsutsui, G.; Tripathi, N.; Vega, R.; Weybright, M.; Xie, R.; Yeh, C.; Bu, H.; Burns, S.; Canaperi, D.; Celik, M.; Colburn, M.; Jagannathan, H.; Kanakasabaphthy, S.; Kleemeier, W.; Liebmann, L.; Mcherron, D.; Oldiges, P.; Paruchuri, V.; Spooner, T.; Stathis, J.; Divakaruni, R.; Gow, T.; Iacoponi, J.; Jenq, J.; Sampson, R; Yang, W.; Khare, M.;

2014 / IEEE

Description

This item from - IEEE Conference - 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT) - In this paper, we present a 10nm CMOS platform technology for low power and high performance applications with the tightest contacted poly pitch (CPP) of 64nm and metallization pitch of 48nm ever reported in the FinFET technology on both bulk and SOI substrates. A 0.053um2 SRAM bit-cell is reported with a corresponding Static Noise Margin (SNM) of 140mV at 0.75V. Intensive multi-patterning technology and various self-aligned processes have been developed with 193i lithography to overcome optical patterning limits. Multi-workfunction (MWF) gate stack has been enabled to provide Vt tunability without the variability degradation induced by Random Dopant Fluctuation (RDF) from channel dopants.