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Novel strained SiGe/TaOx/Ta RRAM device fabricated by fully CMOS compatible process

By: Jiang, Y.; Tan, C. C.; Yeo, E. G.; Li, M. H.; He, W.; Zhuo, V. Y.-Q.; Fang, Z.; Weng, B. B.;

2014 / IEEE


This item from - IEEE Conference - 2014 14th Non-Volatile Memory Technology Symposium (NVMTS) - A novel strained SiGe/TaOx/Ta RRAM device is successfully demonstrated via a fully CMOS compatible process. The bottom electrode (BE) is made of strained single crystalline SiGe layer where both n type and p type SiGe layer as the BE. Typical bipolar switching behavior is obtained for such RRAM devices. Cycle to cycle uniformity are investigated in this work, and it is found that n type SiGe as BE shows better uniformity due to the better dopant distribution for Arsenic than Boron in SiGe layer.