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In-situ oxygen x-ray absorption spectroscopy investigation of the resistance modulation mechanism in LiNbO2 memristors
By: Jordan D. Greenlee; Cole F. Petersburg; W. Laws Calley; Cherno Jaye; Daniel A. Fischer; Faisal M. Alamgir; W. Alan Doolittle;
In situ near edge x-ray absorption fine structure spectroscopy (NEXAFS) is performed on LiNbO2 analog memristors to identify the underlying analog resistance modulation mechanism. Empty electronic state gradients in the NEXAFS difference spectra are observed in biased devices indicating a gradual movement of lithium. This movement of lithium supports the assertion that simple ion dopant drift and diffusion dominate the analog memristorâ€™s resistance response. By identifying the physical memristance mechanism in analog LiNbO2 memristors, suggestions are made for additions to the memristor to modify device performance for both neuromorphic computing and memory applications.