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The series resistance component of hot carrier degradation in ultra-short channel devices
2013 / IEEE
This item from - IEEE Conference - 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Our measurements reveal that, similar to much larger power device geometries, hot carrier degradation in ultra-short channel devices involves (1) presumably defect generation-based parametric shifts in threshold voltage/transconductance and (2) an enhancement in series resistance. We show that the series resistance component, which has been seemingly overlooked for ultra-short channel devices, cannot be ignored.