Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

The series resistance component of hot carrier degradation in ultra-short channel devices

By: Oates, A.S.; Cheung, K.P.; Campbell, J.P.;

2013 / IEEE


This item from - IEEE Conference - 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Our measurements reveal that, similar to much larger power device geometries, hot carrier degradation in ultra-short channel devices involves (1) presumably defect generation-based parametric shifts in threshold voltage/transconductance and (2) an enhancement in series resistance. We show that the series resistance component, which has been seemingly overlooked for ultra-short channel devices, cannot be ignored.