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The series resistance component of hot carrier degradation in ultra-short channel devices

By: Oates, A.S.; Cheung, K.P.; Campbell, J.P.;

2013 / IEEE

Description

This item from - IEEE Conference - 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Our measurements reveal that, similar to much larger power device geometries, hot carrier degradation in ultra-short channel devices involves (1) presumably defect generation-based parametric shifts in threshold voltage/transconductance and (2) an enhancement in series resistance. We show that the series resistance component, which has been seemingly overlooked for ultra-short channel devices, cannot be ignored.